Abstract: In order to prevent a replacement of the needle plate in the situation not suitable for replacing the needle plate, a needle plate detachable mechanism has a needle plate fixing unit for fixing a needle plate on a sewing machine body; a releasing unit for releasing a fixed state of the needle plate; and a fixing-release limiting unit for limiting a release of the fixed state of the needle plate when the needle is positioned below an upper surface of the needle plate or when the sewing machine motor is driven.

Abstract: An object of the present invention is to provide a chromatographic medium having sufficiently improved storage stability. The present invention relates to a chromatographic medium having a detection part in which a detection substance composed of a protein is fixed, wherein the detection part includes a tri- or higher polysaccharide and a basic amino acid.

Abstract: There is provided a communication terminal including a transmission controller configured to allow transmission of, to a verification target device, authentication information for authenticating the verification target device based on first information acquired from an information processing device, and a verification unit configured to verify validity of the verification target device based on a response to the authentication information and second information acquired from the information processing device, the second information being associated with the first information.

Abstract: Over a front surface of a silicon semiconductor wafer is deposited a high dielectric constant film with a silicon oxide film, serving as an interface layer, provided between the semiconductor wafer and the high dielectric constant film. After a chamber houses the semiconductor wafer, a chamber's pressure is reduced to be lower than atmospheric pressure. Subsequently, a gaseous mixture of ammonia and nitrogen gas is supplied into the chamber to return the pressure to ordinary pressure, and the front surface is irradiated with a flash light, thereby performing post deposition annealing (PDA) on the high dielectric constant film. Since the pressure is reduced once to be lower than atmospheric pressure and then returned to ordinary pressure, a chamber's oxygen concentration is lowered remarkably during the PDA. This restricts an increase in thickness of the silicon oxide film underlying the high dielectric constant film by oxygen taken in during the PDA.

Abstract: A metal film is deposited on a front surface of a semiconductor wafer of silicon. After the semiconductor wafer is received in a chamber, the pressure in the chamber is reduced to a pressure lower than atmospheric pressure. Thereafter, nitrogen gas is supplied into the chamber to return the pressure in the chamber to ordinary pressure, and the front surface of the semiconductor wafer is irradiated with a flash of light, so that a silicide that is a compound of the metal film and silicon is formed. The oxygen concentration in the chamber is significantly lowered during the formation of the silicide because the pressure in the chamber is reduced once to the pressure lower than atmospheric pressure and then returned to the ordinary pressure. This suppresses the increase in resistance of the silicide resulting from the entry of oxygen in the atmosphere in the chamber into defects near the interface between the metal film and a base material.

Abstract: Contactless power supply device of the present invention includes: contactless power supply section that supplies AC power in a contactless manner; contactless power receiving section that receives the AC power in a contactless manner; first DC transformer circuit that transforms, to DC load voltage, DC reception-power voltage obtained from the contactless power receiving section and supplies the DC load voltage to first electric load, and that has a reverse transfer function of transferring regenerative power generated by the first electric load in a reverse direction; and second DC transformer circuit that transforms the DC reception-power voltage to DC load voltage and supplies the DC load voltage to second electric load. Accordingly, the generated regenerative power is allocated and made available to the other electric load, and a power storage section is not necessary, which suppresses an increase in the weight and size of the power-receiving-side device.

Abstract: Hydrogen annealing for heating a semiconductor wafer on which a thin film containing a dopant is deposited to an annealing temperature under an atmosphere containing hydrogen is performed. A native oxide film is inevitably formed between the thin film containing the dopant and the semiconductor wafer, however, by performing hydrogen annealing, the dopant atoms diffuse relatively easily in the native oxide film and accumulate at the interface between the front surface of the semiconductor wafer and the native oxide film. Subsequently, the semiconductor wafer is preheated to a preheating temperature under a nitrogen atmosphere, and then, flash heating treatment in which the front surface of the semiconductor wafer is heated to a peak temperature for less than one second is performed. The dopant atoms are diffused and activated in a shallow manner from the front surface of the semiconductor wafer, thus, the low-resistance and extremely shallow junction is obtained.

Abstract: Provided is technology enabling reliably erasing information on recovered paper, and whitening (reducing blackening) of the sheet. A sheet processing device has an image inspector configured to determine from a sheet printed with image information at least one of a background color of the sheet, and position, size, and color of the image information on the sheet; an image analyzer configured to determine, based on the evaluation result from the image inspector, a type of ink masking agent and an amount of ink masking agent; an ink masking agent applicator configured to apply to the image information printed on the sheet an ink masking agent of the specific type and specific amount determined by the image analyzer; and a shredder configured to comminute the sheet to which the ink masking agent was applied by the ink masking agent applicator.

Abstract: A resin-reinforcing filler of the present invention includes: plate-like, spherical, or fibrous filler substrates; and a coating covering at least a portion of a surface of each of the substrates. The coating contains nanofibers having an average fiber width of 1 nm to 900 nm.

Abstract: First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.

Abstract: A semiconductor wafer to be treated is heated at a first preheating temperature ranging from 100 to 200° C. while a pressure in a chamber housing the semiconductor wafer is reduced to a pressure lower than an atmospheric pressure. After the semiconductor wafer is preheated to increase the temperature into a second preheating temperature ranging from 500 to 700° C. while the pressure in the chamber is restored to a pressure higher than the reduced pressure, a flash lamp emits a flashlight to a surface of the semiconductor wafer. Heating the semiconductor wafer at the first preheating temperature that is a relatively low temperature enables, for example, the moisture absorbed on the surface of the semiconductor wafer in trace amounts to be desorbed from the surface, and also enables the flash heating treatment to be performed with oxygen derived from such absorption removed as much as possible.

Abstract: A separator includes a base and a sheet. The base includes a first face to face a medium, a second face being opposite to the first face, and a third face being an end face in a longitudinal direction of the base. The sheet is disposed on a portion of each of the first and second faces that contacts or is adjacent to a rotator. The sheet has a length in a longitudinal direction thereof substantially equal to a length of the base in the longitudinal direction thereof. The sheet includes a projecting portion outboard from the length of the sheet in the longitudinal direction thereof. A combined length of the sheet and the projecting portion in the longitudinal direction of the sheet is greater than the length of the base in the longitudinal direction thereof. The projecting portion is attached to the second and third faces of the base.

Abstract: First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.

Abstract: Provided is a three-dimensional shaped article with relatively high strength and relatively high accuracy. A sintering and shaping method includes: a shaping layer forming process of forming a shaping layer by using a sintering and shaping material in which inorganic particles are included; a process of applying a liquid binding agent, in which a thermoplastic resin and inorganic particles are included, to a desired region of the shaping layer; a process of curing the liquid binding agent, which is applied, to form a shaping cross-sectional layer (shaping portion); a process of removing a region (non-shaping portion) of the shaping layer to which the liquid binding agent is not applied; and a process of heating the shaping cross-sectional layer that is laminated for a sintering treatment.

Abstract: The present technology relates to a terminal apparatus, a communication method, a settlement processing apparatus, a settlement method, and a settlement system that are configured to execute the adjustment of payment with simplicity and without waste. The terminal apparatus acquires the settlement ID of another terminal apparatus, acquires settlement conditions related with settlement processing, and sends the settlement ID of own apparatus and the settlement ID of another terminal apparatus to the settlement processing apparatus by linking these IDs and the settlement conditions.

Abstract: A metal film is deposited on a front surface of a semiconductor wafer of silicon. After the semiconductor wafer is received in a chamber, the pressure in the chamber is reduced to a pressure lower than atmospheric pressure. Thereafter, nitrogen gas is supplied into the chamber to return the pressure in the chamber to ordinary pressure, and the front surface of the semiconductor wafer is irradiated with a flash of light, so that a silicide that is a compound of the metal film and silicon is formed. The oxygen concentration in the chamber is significantly lowered during the formation of the silicide because the pressure in the chamber is reduced once to the pressure lower than atmospheric pressure and then returned to the ordinary pressure. This suppresses the increase in resistance of the silicide resulting from the entry of oxygen in the atmosphere in the chamber into defects near the interface between the metal film and a base material.