Patents by Inventor Shinichi Kozuka
Shinichi Kozuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10861675Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.Type: GrantFiled: January 4, 2019Date of Patent: December 8, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Takao Funakubo, Hirofumi Haga, Shinichi Kozuka, Wataru Ozawa, Akihiro Sakamoto, Naoki Taniguchi, Hiroshi Tsujimoto, Kumiko Ono
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Publication number: 20190139744Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.Type: ApplicationFiled: January 4, 2019Publication date: May 9, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Takao FUNAKUBO, Hirofumi HAGA, Shinichi KOZUKA, Wataru OZAWA, Akihiro SAKAMOTO, Naoki TANIGUCHI, Hiroshi TSUJIMOTO, Kumiko ONO
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Patent number: 10204763Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.Type: GrantFiled: June 26, 2015Date of Patent: February 12, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Takao Funakubo, Hirofumi Haga, Shinichi Kozuka, Wataru Ozawa, Akihiro Sakamoto, Naoki Taniguchi, Hiroshi Tsujimoto, Kumiko Ono
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Patent number: 9779962Abstract: A plasma etching method is provided to perform a desired etching by switching a process condition while maintaining plasma by supplying high frequency power. A first plasma etching process is performed based on a first process condition. A second plasma etching process different from the first process conditions is performed based on a second process condition while supplying first high frequency power having first effective power. Second high frequency power having second effective power is intermittently supplied between the first plasma etching process and the second plasma etching process during a switch from the first plasma etching process to the second plasma etching process. The second effective power of the second high frequency power is equal to or lower than the first effective power of the first high frequency power in the second plasma etching process.Type: GrantFiled: December 2, 2015Date of Patent: October 3, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Takao Funakubo, Shinichi Kozuka, Yuta Seya, Aritoshi Mitani
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Publication number: 20170221684Abstract: A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and includes at least one of a transition metal and a base metal, by plasma of a processing gas, wherein the processing gas includes Ar gas and a CHzFw gas, and does not includes a chlorine-based gas and a nitrogen-based gas. The deposit is removed by the plasma of the processing gas while applying a negative DC voltage to the member within the processing vessel, and the negative DC voltage is set to be equal to or less than ?100V such that argon ions in the plasma of the processing gas collide with the member within the processing vessel and the deposit is removed by sputtering of the argon ions.Type: ApplicationFiled: April 11, 2017Publication date: August 3, 2017Inventors: Masaru NISHINO, Takao FUNAKUBO, Shinichi KOZUKA, Ryosuke NIITSUMA, Tsutomu ITO
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Patent number: 9653317Abstract: A metal-containing deposit can be efficiently removed. A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and contains at least one of a transition metal and a base metal, by plasma of a processing gas containing a CxFy gas, in which x is an integer equal to or less than 2 and y is an integer equal to or less than 6, and without containing a chlorine-based gas and a nitrogen-based gas.Type: GrantFiled: October 23, 2014Date of Patent: May 16, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Masaru Nishino, Takao Funakubo, Shinichi Kozuka, Ryosuke Niitsuma, Tsutomu Ito
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Publication number: 20160163554Abstract: A plasma etching method is provided to perform a desired etching by switching a process condition while maintaining plasma by supplying high frequency power. A first plasma etching process is performed based on a first process condition. A second plasma etching process different from the first process conditions is performed based on a second process condition while supplying first high frequency power having first effective power. Second high frequency power having second effective power is intermittently supplied between the first plasma etching process and the second plasma etching process during a switch from the first plasma etching process to the second plasma etching process. The second effective power of the second high frequency power is equal to or lower than the first effective power of the first high frequency power in the second plasma etching process.Type: ApplicationFiled: December 2, 2015Publication date: June 9, 2016Inventors: Takao FUNAKUBO, Shinichi KOZUKA, Yuta SEYA, Aritoshi MITANI
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Publication number: 20160035541Abstract: Disclosed is a plasma processing apparatus including: a processing container; a support member provided within the processing container and configured to support a processing target substrate; and a gas supply member including a first region formed with a gas supply hole, a second region not formed with a gas supply hole, and a third region formed with a gas supply holes. The first to third regions are disposed sequentially from a central portion side of the processing target substrate along a radial direction of the processing target substrate, and the plasma processing apparatus is processed to introduce a processing gas from the gas supply holes of the gas supply member for plasma processing of the processing target substrate into the processing container.Type: ApplicationFiled: July 30, 2015Publication date: February 4, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Shinichi KOZUKA, Ryosuke NIITSUMA, Manabu ISHIKAWA
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Publication number: 20150380282Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.Type: ApplicationFiled: June 26, 2015Publication date: December 31, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Takao FUNAKUBO, Hirofumi HAGA, Shinichi KOZUKA, Wataru OZAWA, Akihiro SAKAMOTO, Naoki TANIGUCHI, Hiroshi TSUJIMOTO, Kumiko ONO
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Publication number: 20150118859Abstract: A metal-containing deposit can be efficiently removed. A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and contains at least one of a transition metal and a base metal, by plasma of a processing gas containing a CxFy gas, in which x is an integer equal to or less than 2 and y is an integer equal to or less than 6, and without containing a chlorine-based gas and a nitrogen-based gas.Type: ApplicationFiled: October 23, 2014Publication date: April 30, 2015Inventors: Masaru NISHINO, Takao FUNAKUBO, Shinichi KOZUKA, Ryosuke NIITSUMA, Tsutomu ITO
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Patent number: 8030216Abstract: A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.Type: GrantFiled: June 13, 2008Date of Patent: October 4, 2011Assignee: Tokyo Electron LimitedInventors: Shinichi Kozuka, Naoto Umehara
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Publication number: 20100165852Abstract: A communication path is set from an ingress node to an egress node on the basis of a specified path setting protocol, and a loopback-test signal is transmitted to the egress node through the communication path so as to perform a loopback-test on the egress node. The ingress node receives a loopback-test response signal transmitted from the egress node on which the loopback-test has been performed, and determines whether or not a loopback-test on the egress node has ended normally by analyzing the received loopback-test response signal.Type: ApplicationFiled: December 14, 2009Publication date: July 1, 2010Applicant: Fujitsu LimitedInventors: Shinichi Kozuka, Toshifumi Amano, Kazuhiko Hata
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Publication number: 20080261404Abstract: A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.Type: ApplicationFiled: June 13, 2008Publication date: October 23, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Shinichi Kozuka, Naoto Umehara
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Patent number: 7405160Abstract: A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.Type: GrantFiled: December 13, 2005Date of Patent: July 29, 2008Assignee: Tokyo Electron LimitedInventors: Shinichi Kozuka, Naoto Umehara
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Publication number: 20080128272Abstract: An object is to provide an air bacteria removal device in which leakage of electrolytic water to the outside is eliminated as much as possible and in which maintenance can easily be performed, the air bacteria removal device comprises a main body including a water storage section having a sealed or semi-sealed structure in which the electrolytic water is stored, and a water absorption member for supplying the electrolytic water from the water storage section to an air-liquid contact member by use of a capillary phenomenon, the air-liquid contact member and the water absorption member are integrated and detachably attached to the main body, the water absorption member attached to this main body enters the water storage section, and is submerged into the electrolytic water, and the water storage section is brought into a sealed or semi-sealed state.Type: ApplicationFiled: October 24, 2007Publication date: June 5, 2008Inventors: Yasuaki Sonoda, Haruki Minoshima, Akifumi Iwama, Ichiro Tateno, Masafumi Nakanishi, Kenzo Kano, Akiyoshi Ando, Shinichi Kozuka
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Publication number: 20070134938Abstract: A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.Type: ApplicationFiled: December 13, 2005Publication date: June 14, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Shinichi Kozuka, Naoto Umehara
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Patent number: 6169794Abstract: In an IN where the same service is provided by a plurality of SCPs, data consistency is maintained when an update occurs to subscriber data as a result of processing a service for a subscriber. When an update is made to a subscriber database in an SCP, update information is sent to the other SCPs by way of a route selected from among a route via a common channel signaling network, a route via a LAN, and a route via an SMS. Updates occurring during backup or restore processing on a main subscriber database in the SMS are accumulated within the SMS, and the accumulated updates are applied to the main subscriber database after completion of the processing.Type: GrantFiled: May 13, 1998Date of Patent: January 2, 2001Assignee: Fujitsu LimitedInventors: Kiyoshi Oshimi, Hiroyuki Kida, Masaki Watanabe, Shinichi Kozuka
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Patent number: 4989622Abstract: In a vanity case including a receptacle, a cover hinged with the receptacle and latch members for maintaining the cover in a closed position, a push piece is provided which is slidably movable along the longitudinal direction of the vanity case. The push piece has a center opening and an arm swingably connected to a rear wall defining the center opening, the arm having a portion extending forwardly from the rear wall and adjacent at least one of the receptacle and cover in the closed position. A stationary abutment is provided for, upon rearward movement of the push piece, abutting against the arm and causing it to swing relative to the rear wall with the front portion of the arm moving in the center opening, thereby forcing the receptacle and cover away from each other.Type: GrantFiled: July 6, 1988Date of Patent: February 5, 1991Assignee: Yoshida Industry Co., Ltd.Inventors: Shinichi Kozuka, Yukitomo Yuhara
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Patent number: D793572Type: GrantFiled: December 1, 2015Date of Patent: August 1, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Shinichi Kozuka, Ryosuke Niitsuma, Manabu Ishikawa
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Patent number: D877079Type: GrantFiled: February 16, 2016Date of Patent: March 3, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Shinichi Kozuka, Ryosuke Niitsuma, Manabu Ishikawa