Patents by Inventor Shinichi Maeda

Shinichi Maeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220003921
    Abstract: A multicore fiber includes: n pieces of first core regions in a circular shape with a radius r1 that are arranged about points P11 to P1n, and that has a first core portion and a first cladding portion; a second core region in a circular shape with a radius R1 that is arranged about the point a1, and that has a second core portion and a second cladding portion; and a cladding region that is formed on an outer circumferences of the first core region and the second core region. Further, abutting surfaces that are flat surfaces abutting on each other are formed in portions on the outer circumferences of the first core region and the second core region.
    Type: Application
    Filed: September 20, 2021
    Publication date: January 6, 2022
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Masanori TAKAHASHI, Koichi MAEDA, Shinichi ARAI, Ryuichi SUGIZAKI, Masayoshi TSUKAMOTO
  • Patent number: 11217670
    Abstract: A characteristic of a semiconductor device having a back electrode including an Au—Sb alloy is improved. The semiconductor device has a semiconductor substrate and the back electrode including the Au—Sb alloy layer. The back electrode is formed on the semiconductor substrate. The Sb concentration in the Au—Sb alloy layer is equal to or greater than 15 wt %, and equal to or less than 37 wt %. The thickness of the Au—Sb alloy layer is equal to or larger than 20 nm, and equal to or less than 45 nm.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: January 4, 2022
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Yuji Takahashi, Masaki Watanabe, Masashi Sahara, Kentaro Yamada, Masaki Sakashita, Shinichi Maeda, Yoshiaki Yamada
  • Publication number: 20210292168
    Abstract: An alkali metal amide is dissolved in a cyclic alkylene urea represented by the formula (1) (wherein each of R1 and R2 represents a C1 to C3 alkyl group, and R3 represents a C1 to C4 alkylene group).
    Type: Application
    Filed: August 20, 2019
    Publication date: September 23, 2021
    Applicants: NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY, NISSAN CHEMICAL CORPORATION
    Inventors: Kiyoharu TADANAGA, Akira MIURA, Tadayuki ISAJI, Shinichi MAEDA
  • Patent number: 11066599
    Abstract: Provided is a production method for a carbon-based light-emitting material that generates light having a wavelength of 500 to 700 nm when exposed to excitation light having a wavelength of 300 to 600 nm. The production method comprises a step for mixing and heating a starting material containing ascorbic acid, an acid catalyst containing an inorganic acid, and a solvent.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: July 20, 2021
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Tadayuki Isaji, Naoki Otani, Shinichi Maeda, Masahiro Ueda, Takayoshi Kawasaki
  • Publication number: 20200411766
    Abstract: Provided is a charge-transporting composition that contains: a charge-transporting substance comprising a polythiophene derivative represented by formula (1); a fluorine-based surfactant; metal oxide nanoparticles; and a solvent. (R1 and R2 are each independently a hydrogen atom, an alkoxy group having 1-40 carbon atoms, —O—[Z—O]p—Re, a sulfonic acid group, or the like, or R1 and R2 bond to each other to form —O—Y—O—. Y is an alkylene group having 1-40 carbon atoms, which may contain an ether bond and which may be substituted with a sulfonic acid group. Z is an alkylene group having 1-40 carbon atoms, which may be substituted with a halogen atom. p is 1 or more, and Re is a hydrogen atom, an alkyl group having a 1-40 carbon atoms, or the like.
    Type: Application
    Filed: March 6, 2019
    Publication date: December 31, 2020
    Applicant: NISSAN CHEMICAL CORPORATION
    Inventors: Shun SUGAWARA, Shinichi MAEDA
  • Publication number: 20200388762
    Abstract: This hole collection layer composition for an organic photoelectric conversion elements comprises: a charge-transporting substance formed of a polyaniline derivative represented by formula (1); fluorochemical surfactant; metal oxide nanoparticles; and a solvent. The hole collection layer composition provides a thin film having excellent adhesiveness to an active layer of an organic photoelectric conversion element. {R1-R6 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, a sulfonic acid group, a C1-C20 alkoxy group, a C1-C20 thioalkoxy group, a C1-C20 alkyl group, etc. Meanwhile, one of R1-R4 is a sulfonic acid group and at least one of the remaining R1-R4 is a C1-C20 alkoxy group, a C1-C20 thioalkoxy group, a C1-C20 alkyl group, etc., and m and n are numbers that satisfy 0?m?1, 0?n?1, and m+n=1.
    Type: Application
    Filed: December 5, 2018
    Publication date: December 10, 2020
    Applicant: NISSAN CHEMICAL CORPORATION
    Inventors: Shun SUGAWARA, Shinichi MAEDA
  • Publication number: 20200350413
    Abstract: An amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The amorphous metal oxide semiconductor layer produced via a method that includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150° C. or higher and lower than 300° C.
    Type: Application
    Filed: July 14, 2020
    Publication date: November 5, 2020
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Yoshiomi HIROI, Shinichi MAEDA
  • Patent number: 10756190
    Abstract: The invention provides a precursor composition for forming an amorphous metal oxide semiconductor layer, containing a metal salt, a primary amide, and a water-based solution. An amorphous metal oxide semiconductor layer is formed by use of the composition.
    Type: Grant
    Filed: July 26, 2011
    Date of Patent: August 25, 2020
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Yoshiomi Hiroi, Shinichi Maeda
  • Publication number: 20200203491
    Abstract: A characteristic of a semiconductor device having a back electrode including an Au—Sb alloy is improved. The semiconductor device has a semiconductor substrate and the back electrode including the Au—Sb alloy layer. The back electrode is formed on the semiconductor substrate. The Sb concentration in the Au—Sb alloy layer is equal to or greater than 15 wt %, and equal to or less than 37 wt %. The thickness of the Au—Sb alloy layer is equal to or larger than 20 nm, and equal to or less than 45 nm.
    Type: Application
    Filed: December 20, 2019
    Publication date: June 25, 2020
    Inventors: Yuji TAKAHASHI, Masaki WATANABE, Masashi SAHARA, Kentaro YAMADA, Masaki SAKASHITA, Shinichi MAEDA, Yoshiaki YAMADA
  • Publication number: 20200125958
    Abstract: A training apparatus, for training a network, including a first network and a second network, configured to infer a feature of an input graph, includes memory and a processor. The processor is configured to: merge, by the first network, first hidden vectors of first nodes of the input graph and a second hidden vector of a second node coupled to each of the first nodes, based on the first hidden vectors, the second hidden vector, and information on coupling between the first nodes. The processor is further configured to update the first hidden vectors and the second hidden vector, based on a result of the merging; extract, from the second network, the feature of the input graph, based on the updated first hidden vectors and the updated second hidden vector; calculate a loss of the feature of the input graph; and update the first network or the second network.
    Type: Application
    Filed: October 18, 2019
    Publication date: April 23, 2020
    Applicant: PREFERRED NETWORKS, INC.
    Inventors: Katsuhiko ISHIGURO, Shinichi MAEDA
  • Patent number: 10573834
    Abstract: To provide a coating fluid for a gate insulating film, which can be baked at a low temperature of at most 180C; a gate insulating film having excellent solvent resistance and further having good characteristics in e.g. specific resistance or semiconductor mobility; and an organic transistor employing the gate insulating film. A coating fluid for a gate insulating film, which comprises a polyimide obtainable by cyclodehydration of a polyamic acid having repeating units of a specific structure, a gate insulating film employing the coating fluid, and the organic transistor employing the gate insulating film.
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: February 25, 2020
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Shinichi Maeda, Yosuke Iinuma
  • Publication number: 20190251418
    Abstract: An autoencoder includes memory configured to store data including an encode network and a decode network, and processing circuitry coupled to the memory. The processing circuitry is configured to cause the encode network to convert inputted data to a plurality of values and output the plurality of values, batch-normalize values indicated by at least two or more layers of the encode network, out of the output plurality of values, the batch-normalized values having a predetermined average value and a predetermined variance value, quantize each of the batch-normalized values, and cause the decode network to decode each of the quantized values.
    Type: Application
    Filed: February 8, 2019
    Publication date: August 15, 2019
    Applicant: Preferred Networks, Inc.
    Inventors: Ken NAKANISHI, Shinichi MAEDA
  • Patent number: 10307752
    Abstract: A method for producing a polymer of the present invention includes the following steps (a) and (b): step (a): producing a polymer in the presence of an acid or base catalyst; and step (b): contacting a solution containing the polymer obtained in step (a) to a mixed resin of an anion-exchange resin and a cation-exchange resin.
    Type: Grant
    Filed: June 25, 2013
    Date of Patent: June 4, 2019
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Seiji Tsuchiya, Shinichi Maeda
  • Publication number: 20190156182
    Abstract: A data prediction apparatus includes a memory and processing circuitry coupled to the memory configured to (1) receive the target data on which to make inference, (2) extract a neighborhood data group that is a set of data points in supervised data that are similar to the target data, (3) generate a local model by performing local and regularization learning using the neighborhood data group, and (4) make inference on the target data by using the local model.
    Type: Application
    Filed: October 30, 2018
    Publication date: May 23, 2019
    Inventors: Shinichi Maeda, Masanori Koyama
  • Publication number: 20190055466
    Abstract: Provided is a production method for a carbon-based light-emitting material that generates light having a wavelength of 500 to 700 nm when exposed to excitation light having a wavelength of 300 to 600 nm. The production method comprises a step for mixing and heating a starting material containing ascorbic acid, an acid catalyst containing an inorganic acid, and a solvent.
    Type: Application
    Filed: January 25, 2017
    Publication date: February 21, 2019
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Tadayuki ISAJI, Naoki OTANI, Shinichi MAEDA, Masahiro UEDA, Takayoshi KAWASAKI
  • Patent number: 10177035
    Abstract: It is prevented that when a predetermined number of semiconductor chips having transistors are manufactured from one semiconductor wafer, manufacturing cost of a semiconductor device is increased due to excess semiconductor chips manufactured from the semiconductor wafer. A first bipolar transistor including a first emitter region having a first area is formed in a first chip formation region in an exposure region that can be exposed by one exposure step, and a second bipolar transistor including a second emitter region having a second area different from the first area is formed in a second chip formation region in the exposure region.
    Type: Grant
    Filed: August 7, 2017
    Date of Patent: January 8, 2019
    Assignee: Renesas Electronics Corporation
    Inventor: Shinichi Maeda
  • Patent number: 10049699
    Abstract: A disc tray includes a bottom wall including an outer periphery and an inner rib supporter supporting the lowermost disc from below. The bottom wall is thickened from the outer periphery toward the inner rib supporter. The lowermost disc includes a data recording area, an inner rib, and an outer rib. When the lowermost disc is stationary, the outer rib of the lowermost disc and the upper surface of the bottom wall are separated by a gap. When the lowermost disc is inclined in such a manner that part of the outer rib of the lowermost disc comes into contact with the upper surface of the bottom wall, the data recording area of the lowermost disc and the upper surface of the bottom wall are separated by a gap greater than thickness of the outer or inner rib.
    Type: Grant
    Filed: October 25, 2017
    Date of Patent: August 14, 2018
    Assignee: Panasonic Intellecutal Property Management Co., Ltd.
    Inventors: Yoichi Yamamoto, Shinichi Maeda, Norikatsu Yoshida, Shuji Tabuchi
  • Publication number: 20180144773
    Abstract: A disc tray includes a bottom wall including an outer periphery and an inner rib supporter supporting the lowermost disc from below. The bottom wall is thickened from the outer periphery toward the inner rib supporter. The lowermost disc includes a data recording area, an inner rib, and an outer rib. When the lowermost disc is stationary, the outer rib of the lowermost disc and the upper surface of the bottom wall are separated by a gap. When the lowermost disc is inclined in such a manner that part of the outer rib of the lowermost disc comes into contact with the upper surface of the bottom wall, the data recording area of the lowermost disc and the upper surface of the bottom wall are separated by a gap greater than thickness of the outer or inner rib.
    Type: Application
    Filed: October 25, 2017
    Publication date: May 24, 2018
    Inventors: Yoichi YAMAMOTO, Shinichi MAEDA, Norikatsu YOSHIDA, Shuji TABUCHI
  • Publication number: 20180082944
    Abstract: In a semiconductor device having a capacitive element, an increase in a leak current caused by the generation of a parasitic MOSFET is avoided by thinning the insulating film between the electrodes of the capacitive element and thickening the interlayer insulating film. The semiconductor device is provided with a capacitive element including a lower electrode formed on the main surface of the semiconductor substrate in the capacitive element region and an upper electrode formed just above the lower electrode through the silicon nitride film and an interlayer insulating film including a silicon oxide film, a silicon nitride film, and a silicon oxide film over the semiconductor substrate in a region different from the capacitive element region.
    Type: Application
    Filed: September 14, 2017
    Publication date: March 22, 2018
    Inventor: Shinichi MAEDA
  • Patent number: 9859442
    Abstract: The invention provides a metal oxide semiconductor layer forming composition containing a solvent represented by formula [1]: (wherein R1 represents a C2 to C3 linear or branched alkylene group, and R2 represents a C1 to C3 linear or branched alkyl group) and an inorganic metal salt.
    Type: Grant
    Filed: July 14, 2015
    Date of Patent: January 2, 2018
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventor: Shinichi Maeda