Patents by Inventor Shinichi Yagihashi

Shinichi Yagihashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4561486
    Abstract: A method of fabricating a polycrystalline silicon wafer, which method includes the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray. The wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold.
    Type: Grant
    Filed: April 29, 1982
    Date of Patent: December 31, 1985
    Assignee: Hoxan Corporation
    Inventors: Yasuhiro Maeda, Takashi Yokoyama, Shinichi Yagihashi
  • Patent number: 4519764
    Abstract: A method of fabricating a polycrystalline silicon wafer, which method advantageously has the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray, and the wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold as the conventional method.
    Type: Grant
    Filed: August 27, 1984
    Date of Patent: May 28, 1985
    Assignee: Hoxan Corporation
    Inventors: Yasuhiro Maeda, Takashi Yokoyama, Shinichi Yagihashi