Patents by Inventor Shinichi Yano

Shinichi Yano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210107734
    Abstract: A member which contacts liquid, gas, or powder insulating material when the insulating material is caused to flow and which is less susceptible to dielectric breakdown; a distribution mechanism, tank, and device using a sheet for lining the member or the inside of a pipe or a tank containing the member; a storage tank in which a portion of the surface of a liquid-contact portion thereof includes the member a storage method for storing organic solvent, ultrapure water, and hydrogen peroxide water, using the storage tanks; and a method for manufacturing a semiconductor product using the organic solvent stored in the storage tank. A resin composition containing a matrix resin and an electro-conductive material dispersed in the matrix resin is used for the member which contacts liquid, gas, or powder insulating material when the insulating material is caused to flow.
    Type: Application
    Filed: November 30, 2017
    Publication date: April 15, 2021
    Inventors: Shinichi YANO, Mitsuyoshi KAWAGUCHI, Toshiyuki KATSUBE
  • Patent number: 9343487
    Abstract: A TFT substrate includes a TFT including a source electrode having a lower source electrode and an upper source electrode, which are electrically connected to each other, and a drain electrode having a lower drain electrode and an upper drain electrode, which are electrically connected to each other. The lower source electrode and the lower drain electrode are in contact with a lower surface of the semiconductor film, and the upper source electrode and the upper drain electrode are in contact with an upper surface of the semiconductor film.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: May 17, 2016
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Kensuke Nagayama, Kazunori Inoue, Yasuyoshi Ito, Nobuaki Ishiga, Naoki Tsumura, Shinichi Yano
  • Publication number: 20160022264
    Abstract: The problem that a metal wire joined integrally to a hole formed in a proximal end face of a medical suture needle is susceptible to bending damage is reduced. A suture needle A has a blind hole 5 which is formed in a proximal end face 3, inserts the end of a wire 10 thereinto, and joins the wire 10 thereto by caulking, and a counterbore 6 which is formed on the proximal end face 3 side of the blind hole 5 and has a dimension D at least in the proximal end face 3 larger than a dimension d of the blind hole 5 and a depth L smaller than a depth of a caulked portion with respect to the blind hole 5. A suture needle with wire inserts the end of the wire 10 into the blind hole 5 to caulk the outer circumference of the suture needle corresponding to the blind hole 5, thereby integrally joins the wire 10 thereto.
    Type: Application
    Filed: December 24, 2008
    Publication date: January 28, 2016
    Applicant: MANI, INC.
    Inventors: Masaaki Matsutani, Shouichi Fukuda, Masatoshi Fukuda, Shinichi Akutsu, Kazuaki Kato, Shinichi Yano
  • Publication number: 20150372027
    Abstract: A TFT substrate includes a TFT including a source electrode having a lower source electrode and an upper source electrode, which are electrically connected to each other, and a drain electrode having a lower drain electrode and an upper drain electrode, which are electrically connected to each other. The lower source electrode and the lower drain electrode are in contact with a lower surface of the semiconductor film, and the upper source electrode and the upper drain electrode are in contact with an upper surface of the semiconductor film.
    Type: Application
    Filed: August 28, 2015
    Publication date: December 24, 2015
    Applicant: Mitsubishi Electric Corporation
    Inventors: Kensuke NAGAYAMA, Kazunori INOUE, Yasuyoshi ITO, Nobuaki ISHIGA, Naoki TSUMURA, Shinichi YANO
  • Patent number: 9190420
    Abstract: A TFT substrate includes a TFT including a source electrode having a lower source electrode and an upper source electrode, which are electrically connected to each other, and a drain electrode having a lower drain electrode and an upper drain electrode, which are electrically connected to each other. The lower source electrode and the lower drain electrode are in contact with a lower surface of the semiconductor film, and the upper source electrode and the upper drain electrode are in contact with an upper surface of the semiconductor film.
    Type: Grant
    Filed: April 17, 2014
    Date of Patent: November 17, 2015
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kensuke Nagayama, Kazunori Inoue, Yasuyoshi Ito, Nobuaki Ishiga, Naoki Tsumura, Shinichi Yano
  • Patent number: 8908117
    Abstract: A thin film transistor array substrate of the present invention having an array area, and a frame area, the thin film transistor array substrate includes: a thin film transistor; an upper metal pattern formed by the same material as source and drain electrodes at the same layer; a transparent conductive film pattern; and an upper layer insulation film, wherein the transparent conductive film pattern has: a first-type transparent conductive film pattern provided to located within one of a pattern of the electrode pattern and a pattern of the metal pattern, as viewed from the top side, and to not cover pattern end faces of the electrode pattern or the metal pattern; and a second-type transparent conductive film pattern provided to stick out from an inside of at least a portion of one of the patterns, as viewed from the top side and to cover the pattern end faces.
    Type: Grant
    Filed: October 26, 2011
    Date of Patent: December 9, 2014
    Assignee: Mitsubishi Electric Corporation
    Inventors: Masami Hayashi, Osamu Miyagawa, Toru Takeguchi, Shinichi Yano, Yasuyoshi Itoh, Shingo Nagano
  • Publication number: 20140319515
    Abstract: A TFT substrate includes a TFT including a source electrode having a lower source electrode and an upper source electrode, which are electrically connected to each other, and a drain electrode having a lower drain electrode and an upper drain electrode, which are electrically connected to each other. The lower source electrode and the lower drain electrode are in contact with a lower surface of the semiconductor film, and the upper source electrode and the upper drain electrode are in contact with an upper surface of the semiconductor film.
    Type: Application
    Filed: April 17, 2014
    Publication date: October 30, 2014
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Kensuke NAGAYAMA, Kazunori INOUE, Yasuyoshi ITO, Nobuaki ISHIGA, Naoki TSUMURA, Shinichi YANO
  • Publication number: 20140290320
    Abstract: Provided is an innovative belt-shaped lubricating material for dry wiredrawing which not only can be used under severe wiredrawing processing conditions such as those of high temperature/high pressure/high speed as well as conventional powdered or granular lubricants for dry wiredrawing but also can cope with diameter reduction to a wide range of wire diameters ranging from a small diameter to a large diameter and a wide range of linear speeds ranging from a low speed to a high speed, has excellent functionalities such as lubricity, followability, spreadability, adhesiveness, heat resistance, processability, workability, safety, durability and productivity irrespective of a processed shape, is effective in improving work environments and is friendly to the global environment. The belt-shaped lubricating material for dry wiredrawing includes a film containing 10 to 90% by weight of a metal salt of a saturated fatty acid and 10 to 90% by weight of a thermoplastic resin.
    Type: Application
    Filed: July 10, 2012
    Publication date: October 2, 2014
    Applicant: KYOEISHA CHEMICAL CO., LTD.
    Inventors: Kazuki Maeda, Hideki Tezuka, Yoshitsugu Okuyama, Atsuchi Maekawa, Shinichi Yano
  • Publication number: 20120113376
    Abstract: A thin film transistor array substrate of the present invention having an array area, and a frame area, the thin film transistor array substrate includes: a thin film transistor; an upper metal pattern formed by the same material as source and drain electrodes at the same layer; a transparent conductive film pattern; and an upper layer insulation film, wherein the transparent conductive film pattern has: a first-type transparent conductive film pattern provided to located within one of a pattern of the electrode pattern and a pattern of the metal pattern, as viewed from the top side, and to not cover pattern end faces of the electrode pattern or the metal pattern; and a second-type transparent conductive film pattern provided to stick out from an inside of at least a portion of one of the patterns, as viewed from the top side and to cover the pattern end faces.
    Type: Application
    Filed: October 26, 2011
    Publication date: May 10, 2012
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Masami HAYASHI, Osamu Miyagawa, Toru Takeguchi, Shinichi Yano, Yasuyoshi Itoh, Shingo Nagano
  • Patent number: 8034596
    Abstract: The present invention provides a novel cellulase-producing fungus, i.e. Acremonium cellulolyticus CF-2612 strain or a mutant thereof, which has an ability to produce cellulase so highly, a method for producing cellulase and/or hemicellulase by culturing said fungus, and a method for degrading or saccharifying biomass using the cellulase and/or hemicellulase.
    Type: Grant
    Filed: July 31, 2007
    Date of Patent: October 11, 2011
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Xu Fang, Shinichi Yano, Hiroyuki Inoue, Shigeki Sawayama, Naoyuki Okuda, Masanori Sato, Masashi Kuroda
  • Patent number: 7915062
    Abstract: A TFT array substrate includes a TFT having an ohmic contact film and a source electrode and a drain electrode formed on the ohmic contact film. It also includes a pixel electrode electrically connected with the drain electrode. The source electrode and the drain electrode are made of an Al alloy containing Ni as an additive.
    Type: Grant
    Filed: June 13, 2007
    Date of Patent: March 29, 2011
    Assignee: Mitsubishi Electric Corporation
    Inventors: Shinichi Yano, Tadaki Nakahori, Nobuaki Ishiga
  • Publication number: 20100304455
    Abstract: The present invention relates to a process for producing ethanol by carrying out the following steps: performing enzymatic saccharification of pre-treated lignocellulosic biomass in a reaction system; performing ethanol fermentation of fermentable sugars obtained from the saccharified pre-treated lignocellulosic biomass in the same reaction zone as the enzymatic saccharification; distilling ethanol directly off from a reaction treatment liquid in the reaction zone, so as to recover the ethanol.
    Type: Application
    Filed: October 11, 2007
    Publication date: December 2, 2010
    Applicants: National Institute of Advanced Industrial Science and Technology, Juon Co., Ltd.
    Inventors: Hiroyuki Inoue, Chiaki Kitao, Shinichi Yano, Shigeki Sawayama, Takashi Endo, Tetsuro Nishimoto, Naohiro Fujikawa
  • Publication number: 20100136618
    Abstract: The present invention provides a novel cellulase-producing fungus, i.e. Acremonium cellulolyticus CF-2612 strain or a mutant thereof, which has an ability to produce cellulase so highly, a method for producing cellulase and/or hemicellulase by culturing said fungus, and a method for degrading or saccharifying biomass using the cellulase and/or hemicellulase.
    Type: Application
    Filed: July 31, 2007
    Publication date: June 3, 2010
    Inventors: Xu Fang, Shinichi Yano, Hiroyuki Inoue, Shigeki Sawayama, Naoyuki Okuda, Masanori Sato, Masashi Kuroda
  • Patent number: 7528221
    Abstract: It is an object of the present invention to obtain a PTFE molding excellent in flexing resistance without decreasing the tensile strength and tensile elongation. The present invention is a modified polytetrafluoroethylene molded article obtained by molding a modified polytetrafluoroethylene molding powder, wherein the modified polytetrafluoroethylene molding powder is not melt-moldable, the modified polytetrafluoroethylene constituting the modified polytetrafluoroethylene molding powder contains 0.01 to 1% by mass of a perfluorovinyl ether unit represented by the formula (I): (wherein X is a perfluoroalkyl group containing 1 to 6 carbon atoms or a perfluoroalkoxyalkyl group containing 4 to 9 carbon atoms) and the heat of crystallization thereof is 18.0 to 25.0 J/g as measured using a differential scanning calorimeter, and the modified polytetrafluoroethylene molded article has a heat of fusion of not more than 28 J/g and a flex life of at least 200×104 cycles.
    Type: Grant
    Filed: November 30, 2005
    Date of Patent: May 5, 2009
    Assignee: Daikin Industries, Ltd.
    Inventors: Tomihiko Yanagiguchi, Shinichi Yano, Masamichi Sukegawa, Hirokazu Yukawa
  • Publication number: 20080191211
    Abstract: A thin film transistor array substrate includes a gate electrode formed on a substrate, a gate insulating film formed over the gate electrode, a source electrode and a drain electrode that are formed on the gate insulating film and include a transparent conductive film and a metal film formed on the transparent conductive film, a semiconductor film formed over the source electrode and the drain electrode to be electrically connected to the source electrode and the drain electrode, and a pixel electrode formed extending from the drain electrode.
    Type: Application
    Filed: February 12, 2008
    Publication date: August 14, 2008
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Shinichi Yano, Kazunori Inoue, Nobuaki Ishiga
  • Patent number: 7387834
    Abstract: The present invention provides a polytetrafluoroethylene molded article, particularly a PTFE molded article for high-frequency insulation, which is excellent in various electric properties and mechanical properties in a high frequency range of 3 to 30 GHz. The present invention also provides PTFE fine powder, which is excellent in extrusion moldability and capable of providing the molded article, and a process for preparing the same. More specifically, the present invention relates to a polytetrafluoroethylene fine powder having a standard specific gravity of 2.180 to 2.225, which is obtained by contacting polytetrafluoroethylene fine powder having a standard specific gravity of 2.180 to 2.225 with a fluorine radical source, wherein tan? at 12 GHz of a film comprising the powder, which is obtained by cooling at 5 to 50° C./second after baking, is at most 2.0×10?4.
    Type: Grant
    Filed: August 1, 2002
    Date of Patent: June 17, 2008
    Assignee: Daikin Industries, Ltd.
    Inventors: Tetsuo Shimizu, Michio Asano, Makoto Ono, Yoshinori Nanba, Shunji Kasai, Shinichi Yano, Hiroyuki Yoshimoto
  • Publication number: 20080125548
    Abstract: It is an object of the present invention to obtain a PTFE molding excellent in flexing resistance without decreasing the tensile strength and tensile elongation. The present invention is a modified polytetrafluoroethylene molded article obtained by molding a modified polytetrafluoroethylene molding powder, wherein the modified polytetrafluoroethylene molding powder is not melt-moldable, the modified polytetrafluoroethylene constituting the modified polytetrafluoroethylene molding powder contains 0.01 to 1% by mass of a perfluorovinyl ether unit represented by the formula (I): (wherein X is a perfluoroalkyl group containing 1 to 6 carbon atoms or a perfluoroalkoxyalkyl group containing 4 to 9 carbon atoms) and the heat of crystallization thereof is 18.0 to 25.0 J/g as measured using a differential scanning calorimeter, and the modified polytetrafluoroethylene molded article has a heat of fusion of not more than 28 J/g and a flex life of at least 200×104 cycles.
    Type: Application
    Filed: November 30, 2005
    Publication date: May 29, 2008
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Tomihiko Yanagiguchi, Shinichi Yano, Masamichi Sukegawa, Hirokazu Yukawa
  • Publication number: 20070295963
    Abstract: A TFT array substrate includes a TFT having an ohmic contact film and a source electrode and a drain electrode formed on the ohmic contact film. It also includes a pixel electrode electrically connected with the drain electrode. The source electrode and the drain electrode are made of an Al alloy containing Ni as an additive.
    Type: Application
    Filed: June 13, 2007
    Publication date: December 27, 2007
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Shinichi YANO, Tadaki Nakahori, Nobuaki Ishiga
  • Patent number: 7129298
    Abstract: The present invention provides a TFE resin molding material which has electric characteristics, particularly low dielectric dissipation factor, in a microwave area, can also lower extrusion pressure as the material is of low molecular weight and can provide a molded article excellent in surface smoothness. The material is especially useful as a coating material for a coaxial cable for equipment in which microwave is used, including satellite transmitting equipment and a cell phone base station. A tetrafluoroethylene resin molding material excellent in high frequency electric characteristics, which provides a molded article having a dielectric constant of at most 2.2 and a dielectric dissipation factor of at most 1.60×10?4 under 12 GHz, and a standard specific gravity of at least 2.192 and less than 2.3 is provided. As the tetrafluoroethylene resin, a tetrafluoroethylene homopolymer or a copolymer of 99.9 to 99.9999% by mole of tetrafluoroethylene and 0.0001 to 0.1% by mole of a specific fluoromonomer is used.
    Type: Grant
    Filed: August 2, 2001
    Date of Patent: October 31, 2006
    Assignee: Daikin Industries, Ltd.
    Inventors: Makoto Ono, Michio Asano, Yoshinori Nanba, Shunji Kasai, Hiroyuki Yoshimoto, Shinichi Yano, Tetsuo Shimizu
  • Patent number: 6987224
    Abstract: A polytetrafluoroethylene mixed powder, which is obtained by mixing low molecular weight polytetrafluoroetylene powder and high molecular weight polytetrafluoroethylene powder obtained by emulsion polymerization of tetrafluoroethylene, wherein the low molecular weight polytetrafluoroetylene powder has a number average molecular weight of 1,000,000±500,000 and a maximum peak temperature of 327±5° C. in the endothermic curve appearing on the crystalline melting curve obtained by using a differential scanning calorimeter, the high molecular weight polytetrafluoroetylene powder has a number average molecular weight of 4,500,000±1,000,000 and a maximum peak temperature of 340±7° C. in the endothermic curve appearing on the crystalline melting curve obtained by using a differential scanning calorimeter, and the mixed powder has evident peak temperatures of 327±5° C. and 340±7° C. in the endothermic curve appearing on the crystalline melting curve obtained by using a differential scanning calorimeter.
    Type: Grant
    Filed: May 29, 2001
    Date of Patent: January 17, 2006
    Assignee: Daikin Industries, Ltd.
    Inventors: Katsutoshi Yamamoto, Hiroyuki Yoshimoto, Kazuo Ishiwari, Shinichi Yano