Abstract: An integrated unit, includes a drive device, and a control device which is fixed to the drive device and is configured to control the drive device. The control device includes a guide pin protruding toward the drive device. The drive device includes a guide hole through which the guide pin is inserted. The control device is fixed to the drive device with the guide pin inserted through the guide hole. The drive device includes a protective wall which covers at least a part of the guide pin with the control device fixed to the drive device.

Abstract: A motor control apparatus drives an inverter which supplies and receives electric power with respect to a motor by pulse width modulation. The motor control apparatus sets a frequency of a carrier such that a frequency of a sideband wave component of the carrier which is used for the pulse width modulation and a frequency of a predetermined rotation order of the motor become different from each other.

Abstract: A motor control apparatus drives an inverter which supplies and receives electric power with respect to a motor by pulse width modulation. The motor control apparatus sets a frequency of a carrier such that a frequency of a sideband wave component of the carrier which is used for the pulse width modulation and a frequency of a predetermined rotation order of the motor become different from each other.

Abstract: A power converter includes: a refrigerant flow channel member in which a refrigerant cooling an electronic device flows; a flat refrigerant pipe portion stacked with a power module, provided for a refrigerant cooling the power module to flow therein, and including a contact surface portion contacting the power module to exchange heat; an inlet pipe portion that is disposed at one end of the refrigerant pipe portion and through which the refrigerant flows to the refrigerant pipe portion; an outlet pipe portion that is disposed at the other end of the refrigerant pipe portion and through which the refrigerant flows from the refrigerant pipe portion; an inlet connection portion connecting the inlet pipe portion to the refrigerant flow channel member and formed of a tubular elastic member; and an outlet connection portion connecting the outlet pipe portion to the refrigerant flow channel member and formed of a tubular elastic member.

Abstract: A power converter includes: a refrigerant flow channel member in which a refrigerant cooling an electronic device flows; a flat refrigerant pipe portion stacked with a power module, provided for a refrigerant cooling the power module to flow therein, and including a contact surface portion contacting the power module to exchange heat; an inlet pipe portion that is disposed at one end of the refrigerant pipe portion and through which the refrigerant flows to the refrigerant pipe portion; an outlet pipe portion that is disposed at the other end of the refrigerant pipe portion and through which the refrigerant flows from the refrigerant pipe portion; an inlet connection portion connecting the inlet pipe portion to the refrigerant flow channel member and formed of a tubular elastic member; and an outlet connection portion connecting the outlet pipe portion to the refrigerant flow channel member and formed of a tubular elastic member.

Abstract: A semiconductor device includes a plurality of cells in a main region, a plurality of cells in a sensing region, a transistor, and a gate shut-off time for the sensing region. The transistor is configured to drive each of the plurality of cells in the main region and each of the plurality of cells in the sensing region. The gate shut-off time for the sensing region is set according to D=(Cgs/Cgm)*(Rgs/Rgm) to be earlier than a gate shut-off time for the main region. D indicates a CR delay ratio, Rgm indicates a gate resistance value for the main region and Rgs indicates a gate resistance value for the sensing region in the transistor, and Cgm indicates a parasitic capacitance for the main region and Cgs indicates a parasitic capacitance for the sensing region in the transistor.

Abstract: A semiconductor device includes a plurality of cells in a main region, a plurality of cells in a sensing region, a transistor, and a gate shut-off time for the sensing region. The transistor is configured to drive each of the plurality of cells in the main region and each of the plurality of cells in the sensing region. The gate shut-off time for the sensing region is set according to D=(Cgs/Cgm)*(Rgs/Rgm) to be earlier than a gate shut-off time for the main region. D indicates a CR delay ratio, Rgm indicates a gate resistance value for the main region and Rgs indicates a gate resistance value for the sensing region in the transistor, and Cgm indicates a parasitic capacitance for the main region and Cgs indicates a parasitic capacitance for the sensing region in the transistor.

Abstract: In a semiconductor device including a plurality of insulated gate switching cells each of which has a gate electrode, an emitter electrode that is commonly provided to cover the plurality of insulated gate switching cells, and a bonding wire connected to the emitter electrode, a gate driving voltage being applied to the gate electrode of each insulated gate switching cell so that emitter current flows through the emitter electrode, mutual conductance of each insulated gate switching cell is varied in accordance with the distance from the connection portion corresponding to the bonding position of the bonding wire so that the emitter current flowing through the emitter electrode is substantially equal among the plurality of insulated gate switching cells.

Abstract: In a semiconductor device including a plurality of insulated gate switching cells each of which has a gate electrode, an emitter electrode that is commonly provided to cover the plurality of insulated gate switching cells, and a bonding wire connected to the emitter electrode, a gate driving voltage being applied to the gate electrode of each insulated gate switching cell so that emitter current flows through the emitter electrode, mutual conductance of each insulated gate switching cell is varied in accordance with the distance from the connection portion corresponding to the bonding position of the bonding wire so that the emitter current flowing through the emitter electrode is substantially equal among the plurality of insulated gate switching cells.

Abstract: A semiconductor module includes: a semiconductor element (13) having a working unit (11) and a guard ring unit (12); and heat radiation members (15, 14) arranged on an upper surface and a lower surface of the semiconductor element for cooling the semiconductor element. A passivation film (20) covers the guard ring but does not cover the working unit. The upper heat radiation member (15) is made of a flat metal plate connected to the working unit without contact with the passivation film. The upper heat radiation member is connected to the lower heat radiation member (14) in the thermo-conducting way.

Abstract: A semiconductor module includes: a semiconductor element (13) having a working unit (11) and a guard ring unit (12); and heat radiation members (15, 14) arranged on an upper surface and a lower surface of the semiconductor element for cooling the semiconductor element. A passivation film (20) covers the guard ring but does not cover the working unit. The upper heat radiation member (15) is made of a flat metal plate connected to the working unit without contact with the passivation film. The upper heat radiation member is connected to the lower heat radiation member (14) in the thermo-conducting way.