Patents by Inventor Shinichiro Noudo

Shinichiro Noudo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11088195
    Abstract: To solve at least one of various problems in an image sensor in a 2PD scheme. A solid-state image pickup element includes a plurality of pixels each including a photoelectric conversion element formed on a silicon substrate, in which some pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a first-type separating region extending in a plate shape in a direction along a thickness direction of the silicon substrate, and other pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a second-type separating region formed with a material different from a material of the first-type separating region, the second-type separating region extending in a plate shape in the direction along the thickness direction of the silicon substrate.
    Type: Grant
    Filed: July 28, 2020
    Date of Patent: August 10, 2021
    Assignee: SONY CORPORATION
    Inventor: Shinichiro Noudo
  • Publication number: 20210183934
    Abstract: The present disclosure relates to a solid-state imaging element, a manufacturing method, and an electronic apparatus, in which irregular reflection of light inside a solid-state imaging element package can be suppressed. In the solid-state imaging element, a plurality of pixels is planarly arranged, a connection portion utilized for connection to the outside is provided on a more outer side than an imaging region, and an open portion that is opened up to the connection portion from a light incident surface side of the imaging region where light is incident is formed. Additionally, a plurality of protruding portions periodically arranged is formed on a counterbore surface that is a surface inside the open portion excluding the connection portion. The present technology can be applied to, for example, a back-illuminated type or layered CMOS image sensor.
    Type: Application
    Filed: June 30, 2017
    Publication date: June 17, 2021
    Applicant: SONY CORPORATION
    Inventors: Kenju NISHIKIDO, Takekazu SHINOHARA, Shinichiro NOUDO, Misato KONDO
  • Publication number: 20210160463
    Abstract: A decrease in strength is reduced of a polarizer of an imaging element in which the polarizer that detects polarization information of a subject is arranged. The imaging element includes a plurality of pixels. The plurality of pixels included in the imaging element each includes a color filter that transmits light having a predetermined wavelength of incident light and a polarizer that performs polarization of the incident light, and generates an image signal based on the incident light transmitted through the color filter and the polarizer. The polarizer included in each of the plurality of pixels adjusts the polarization depending on the color filter in a corresponding one of the pixels of the imaging element.
    Type: Application
    Filed: February 5, 2019
    Publication date: May 27, 2021
    Inventors: YUKARI TAGUCHI, SHINICHIRO NOUDO, TOMOHIRO YAMAZAKI
  • Publication number: 20210136283
    Abstract: To suppress entrance of incident light into a charge holding section in a pixel to prevent a reduction in image quality. An imaging device includes a pixel array. The pixel array includes a plurality of pixels each including a photoelectric converter that generates a charge depending on incident light, a charge holding section that holds the generated charge, and a charge transfer section that transfers the generated charge to the charge holding section, each of the plurality of pixels generating an image signal depending on the held charge. The charge holding section or the charge transfer section in each of the plurality of pixels is arranged close to an optical center of the pixel array with respect to the incident light.
    Type: Application
    Filed: January 17, 2019
    Publication date: May 6, 2021
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Shinichiro NOUDO
  • Publication number: 20210118930
    Abstract: To reduce the occurrence of crosstalk due to stray light. A plurality of photoelectric converters is formed on a semiconductor substrate and performs photoelectric conversion according to incident light. A light path portion includes a transparent film through which the incident light is transmitted; a light-blocking wall for each of the plurality of photoelectric converters, the light-blocking wall partitioning the transparent film in a direction perpendicular to the semiconductor substrate, and blocking light; and a light-blocking film that is arranged near an end of the light-blocking wall, the end being situated opposite to an end of the light-blocking wall that is situated closer to the semiconductor substrate, the light-blocking film having a film shape parallel to the semiconductor substrate, and including, for each of the plurality of photoelectric converters, an opening through which the incident light is transmitted.
    Type: Application
    Filed: February 19, 2019
    Publication date: April 22, 2021
    Inventors: SHINICHIRO NOUDO, TAKUJI MATSUMOTO, YUJI ISERI, TAIZO OISHI
  • Publication number: 20200411570
    Abstract: To reduce occurrence of crosstalk in a back-illuminated image capturing element. An image capturing element includes: a pixel including a photoelectric conversion section, a pixel circuit, and a wiring layer; and a polarization section. The photoelectric conversion section is formed on a semiconductor substrate and performs photoelectric conversion based on incident light. The pixel circuit generates an image signal according to a charge generated by the photoelectric conversion. The wiring layer is arranged on a surface of the semiconductor substrate and is configured to transmit any one of the image signal or a signal applied to the pixel circuit, the surface being different from a surface of the semiconductor substrate on which the incident light is incident. The polarization section is arranged between the semiconductor substrate and the wiring layer, and allows transmission of light in a specific polarization direction among incident light transmitted through the photoelectric conversion section.
    Type: Application
    Filed: September 19, 2018
    Publication date: December 31, 2020
    Inventor: SHINICHIRO NOUDO
  • Publication number: 20200365643
    Abstract: To solve at least one of various problems in an image sensor in a 2PD scheme. A solid-state image pickup element includes a plurality of pixels each including a photoelectric conversion element formed on a silicon substrate, in which some pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a first-type separating region extending in a plate shape in a direction along a thickness direction of the silicon substrate, and other pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a second-type separating region formed with a material different from a material of the first-type separating region, the second-type separating region extending in a plate shape in the direction along the thickness direction of the silicon substrate.
    Type: Application
    Filed: July 28, 2020
    Publication date: November 19, 2020
    Applicant: SONY CORPORATION
    Inventor: Shinichiro NOUDO
  • Patent number: 10840289
    Abstract: To solve at least one of various problems in an image sensor in a 2PD scheme. A solid-state image pickup element includes a plurality of pixels each including a photoelectric conversion element formed on a silicon substrate, in which some pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a first-type separating region extending in a plate shape in a direction along a thickness direction of the silicon substrate, and other pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a second-type separating region formed with a material different from a material of the first-type separating region, the second-type separating region extending in a plate shape in the direction along the thickness direction of the silicon substrate.
    Type: Grant
    Filed: July 24, 2017
    Date of Patent: November 17, 2020
    Assignee: Sony Corporation
    Inventor: Shinichiro Noudo
  • Publication number: 20200321376
    Abstract: The incidence of incident light transmitted through a photoelectric conversion unit onto a charge holding unit, a pixel in the adjacency, and the like can be blocked in a pixel, and deterioration in image quality can be prevented. An image sensor includes a pixel, a wiring layer, and an incident light attenuation unit. The pixel includes a photoelectric conversion unit that is formed in a semiconductor substrate and performs photoelectric conversion based on incident light, and a pixel circuit that generates an image signal according to a charge generated by the photoelectric conversion. The wiring layer is arranged on a surface of the semiconductor substrate different from a surface onto which the incident light is incident, and transports either the image signal or a signal applied to the pixel circuit. The incident light attenuation unit attenuates the incident light transmitted through the photoelectric conversion unit.
    Type: Application
    Filed: November 2, 2018
    Publication date: October 8, 2020
    Inventor: Shinichiro NOUDO
  • Publication number: 20200251513
    Abstract: Image plane phase difference pixels that can handle incident light at two or more chief ray angles are realized. A solid-state imaging device includes a pixel, the pixel including a microlens that condenses light from a subject, a photoelectric conversion unit that receives the subject light condensed by the microlens to generate an electrical signal according to an amount of received light, and a light shielding portion provided between the photoelectric conversion unit and the microlens. The light shielding portion includes an edge portion formed across over a light receiving surface of the photoelectric conversion unit, and the edge portion includes a first edge portion and a second edge portion at positions different from each other both in a first direction corresponding to an up and down direction of an output image and a second direction corresponding to a left and right direction of the output image.
    Type: Application
    Filed: April 23, 2020
    Publication date: August 6, 2020
    Applicant: SONY CORPORATION
    Inventor: Shinichiro NOUDO
  • Patent number: 10672813
    Abstract: Image plane phase difference pixels that can handle incident light at two or more chief ray angles are realized. A solid-state imaging device includes a pixel, the pixel including a microlens that condenses light from a subject, a photoelectric conversion unit that receives the subject light condensed by the microlens to generate an electrical signal according to an amount of received light, and a light shielding portion provided between the photoelectric conversion unit and the microlens. The light shielding portion includes an edge portion formed across over a light receiving surface of the photoelectric conversion unit, and the edge portion includes a first edge portion and a second edge portion at positions different from each other both in a first direction corresponding to an up and down direction of an output image and a second direction corresponding to a left and right direction of the output image.
    Type: Grant
    Filed: April 19, 2016
    Date of Patent: June 2, 2020
    Assignee: SONY CORPORATION
    Inventor: Shinichiro Noudo
  • Publication number: 20190252450
    Abstract: To solve at least one of various problems in an image sensor in a 2PD scheme. A solid-state image pickup element includes a plurality of pixels each including a photoelectric conversion element formed on a silicon substrate, in which some pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a first-type separating region extending in a plate shape in a direction along a thickness direction of the silicon substrate, and other pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a second-type separating region formed with a material different from a material of the first-type separating region, the second-type separating region extending in a plate shape in the direction along the thickness direction of the silicon substrate.
    Type: Application
    Filed: July 24, 2017
    Publication date: August 15, 2019
    Applicant: SONY CORPORATION
    Inventor: Shinichiro NOUDO
  • Publication number: 20180166487
    Abstract: Image plane phase difference pixels that can handle incident light at two or more chief ray angles are realized. A solid-state imaging device includes a pixel, the pixel including a microlens that condenses light from a subject, a photoelectric conversion unit that receives the subject light condensed by the microlens to generate an electrical signal according to an amount of received light, and a light shielding portion provided between the photoelectric conversion unit and the microlens. The light shielding portion includes an edge portion formed across over a light receiving surface of the photoelectric conversion unit, and the edge portion includes a first edge portion and a second edge portion at positions different from each other both in a first direction corresponding to an up and down direction of an output image and a second direction corresponding to a left and right direction of the output image.
    Type: Application
    Filed: April 19, 2016
    Publication date: June 14, 2018
    Inventor: Shinichiro NOUDO
  • Patent number: 9985066
    Abstract: There is provided a solid state imaging device including a plurality of imaging pixels arranged two-dimensionally in a matrix configuration and phase difference detecting pixels arranged scatteredly among the imaging pixels, the solid state imaging device including: a first microlens formed for each of the imaging pixels; a planarization film having a lower refractive index than the first microlens and formed on the first microlens; and a second microlens formed only on the planarization film of the phase difference detecting pixel.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: May 29, 2018
    Assignee: Sony Corporation
    Inventors: Shinichiro Noudo, Yoichi Ootsuka
  • Publication number: 20160013233
    Abstract: There is provided a solid state imaging device including a plurality of imaging pixels arranged two-dimensionally in a matrix configuration and phase difference detecting pixels arranged scatteredly among the imaging pixels, the solid state imaging device including: a first microlens formed for each of the imaging pixels; a planarization film having a lower refractive index than the first microlens and formed on the first microlens; and a second microlens formed only on the planarization film of the phase difference detecting pixel.
    Type: Application
    Filed: March 6, 2014
    Publication date: January 14, 2016
    Inventors: Shinichiro NOUDO, Yoichi OOTSUKA
  • Patent number: 8736731
    Abstract: A solid-state imaging device which includes a pixel region which is provided on a semiconductor substrate, and in which a plurality of pixels including a photoelectric conversion unit having a photoelectric conversion function is arranged, a wiring layer which is provided at one plate surface of the semiconductor substrate, a color filter layer which is divided into a plurality of color filters provided corresponding to each pixel of the plurality of pixels which is arranged in the pixel region, and an inter-pixel light shielding unit which is provided in a boundary portion between the pixels adjacent to each other, between the semiconductor substrate and the color filter layer.
    Type: Grant
    Filed: February 23, 2012
    Date of Patent: May 27, 2014
    Assignee: Sony Corporation
    Inventor: Shinichiro Noudo
  • Publication number: 20120242874
    Abstract: A solid-state imaging device which includes a pixel region which is provided on a semiconductor substrate, and in which a plurality of pixels including a photoelectric conversion unit having a photoelectric conversion function is arranged, a wiring layer which is provided at one plate surface of the semiconductor substrate, a color filter layer which is divided into a plurality of color filters provided corresponding to each pixel of the plurality of pixels which is arranged in the pixel region, and an inter-pixel light shielding unit which is provided in a boundary portion between the pixels adjacent to each other, between the semiconductor substrate and the color filter layer.
    Type: Application
    Filed: February 23, 2012
    Publication date: September 27, 2012
    Applicant: Sony Corporation
    Inventor: Shinichiro Noudo
  • Patent number: 7369213
    Abstract: To provide an exposure method and an exposure apparatus, using a complementary divided mask, designed to enable alignment of a complementary divided mask at a high precision over the entire region of a semiconductor wafer. Further, to provide a semiconductor device fabricated by the exposure method and a method of producing a semiconductor device using the exposure method.
    Type: Grant
    Filed: January 5, 2007
    Date of Patent: May 6, 2008
    Assignee: Sony Corporation
    Inventors: Shinichiro Noudo, Kumiko Oguni, Hiroyuki Nakano, Hiroki Hane
  • Publication number: 20070111116
    Abstract: To provide an exposure method and an exposure apparatus, using a complementary divided mask, designed to enable alignment of a complementary divided mask at a high precision over the entire region of a semiconductor wafer. Further, to provide a semiconductor device fabricated by the exposure method and a method of producing a semiconductor device using the exposure method.
    Type: Application
    Filed: January 5, 2007
    Publication date: May 17, 2007
    Inventors: Shinichiro Noudo, Kumiko Oguni, Hiroyuki Nakano, Hiroki Hane
  • Patent number: 7160655
    Abstract: To provide an exposure method and an exposure apparatus, using a complementary divided mask, designed to enable alignment of a complementary divided mask at a high precision over the entire region of a semiconductor wafer. Further, to provide a semiconductor device fabricated by the exposure method and a method of producing a semiconductor device using the exposure method.
    Type: Grant
    Filed: May 16, 2005
    Date of Patent: January 9, 2007
    Assignee: Sony Corporation
    Inventors: Shinichiro Noudo, Kumiko Oguni, Hiroyuki Nakano, Hiroki Hane