Patents by Inventor Shinji Ban

Shinji Ban has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10186355
    Abstract: In a manufacturing method for a thermistor element (3) including: a thermistor portion (49) which is a sintered body formed from a thermistor material; and a pair of electrode wires (25) which are embedded in the thermistor portion (49) and at least one end portion of each of the electrode wires projects at an outer side of the thermistor portion (49), the resistance value of the thermistor element (3) is adjusted by performing a removal processing of removing a part of the thermistor portion (49).
    Type: Grant
    Filed: April 12, 2017
    Date of Patent: January 22, 2019
    Assignee: NGK SPARK PLUG CO., LTD.
    Inventors: Tomoki Yamaguchi, Shinji Ban, Hiroshi Watanabe, Yasuyuki Okimura, Hiroaki Nakanishi, Seiji Oya, Seiya Matsuda
  • Publication number: 20170301437
    Abstract: In a manufacturing method for a thermistor element (3) including: a thermistor portion (49) which is a sintered body formed from a thermistor material; and a pair of electrode wires (25) which are embedded in the thermistor portion (49) and at least one end portion of each of the electrode wires projects at an outer side of the thermistor portion (49), the resistance value of the thermistor element (3) is adjusted by performing a removal processing of removing a part of the thermistor portion (49).
    Type: Application
    Filed: April 12, 2017
    Publication date: October 19, 2017
    Applicant: NGK SPARK PLUG CO., LTD.
    Inventors: Tomoki YAMAGUCHI, Shinji BAN, Hiroshi WATANABE, Yasuyuki OKIMURA, Hiroaki NAKANISHI, Seiji OYA, Seiya MATSUDA
  • Patent number: 9790098
    Abstract: A sintered electroconductive oxide having a perovskite oxide type crystal structure represented by a compositional formula: M1aM2bMncAldCreOf wherein M1 represents at least one element selected from group 3 elements; and M2 represents at least one element selected from among Mg, Ca, Sr and Ba, wherein element M1 predominantly includes at least one element selected from Nd, Pr and Sm, and a, b, c, d, e and f satisfy the following relationships: 0.6005?a<1.000, 0<b?0.400, 0?c<0.150, 0.400?d<0.950, 0.050<e?0.600, 0.50<e/(c+e)?1.00, and 2.80?f?3.30. Also disclosed is a thermistor element including a thermistor portion which is formed of the sintered electroconductive oxide as well as a temperature sensor employing the thermistor element.
    Type: Grant
    Filed: April 5, 2016
    Date of Patent: October 17, 2017
    Assignee: NGK SPARK PLUG CO., LTD.
    Inventors: Hiroshi Watanabe, Shinji Ban, Tomoki Yamaguchi, Yasuyuki Okimura, Tomohiro Nishi
  • Publication number: 20160289083
    Abstract: A sintered electroconductive oxide having a perovskite oxide type crystal structure represented by a compositional formula: M1aM2bMncAldCreOf wherein M1 represents at least one element selected from group 3 elements; and M2 represents at least one element selected from among Mg, Ca, Sr and Ba, wherein element M1 predominantly includes at least one element selected from Nd, Pr and Sm, and a, b, c, d, e and f satisfy the following relationships: 0.6005?a<1.000, 0<b?0.400, 0?c<0.150, 0.400?d<0.950, 0.050<e?0.600, 0.50<e/(c+e)?1.00, and 2.80?f?3.30. Also disclosed is a thermistor element including a thermistor portion which is formed of the sintered electroconductive oxide as well as a temperature sensor employing the thermistor element.
    Type: Application
    Filed: April 5, 2016
    Publication date: October 6, 2016
    Applicant: NGK SPARK PLUG CO., LTD.
    Inventors: Hiroshi WATANABE, Shinji BAN, Tomoki YAMAGUCHI, Yasuyuki OKIMURA, Tomohiro NISHI
  • Patent number: 8771559
    Abstract: A conductive sintered oxide which includes: a conductive crystal phase having a perovskite structure represented by (RE1-cSrc)MdO3, in which RE is a group of elements consisting of Yb and/or Lu and at least one element selected from Group IIIA elements excluding Yb, Lu and La, and M is a group of elements consisting of Al and at least one element selected from Groups IVA, VA, VIA, VIIA and VIII, a first insulating crystal phase represented by RE2O3, and a second insulating crystal phase represented by SrAl2O4. The conductive crystal phase has a coefficient c satisfying 0.18<c<0.50 and has a coefficient d satisfying 0.67?d?0.93. A content of a third insulating crystal phase represented by RE4Al2O9, the content of which may be zero, is smaller than the content of each of the first and second insulating crystal phases.
    Type: Grant
    Filed: August 16, 2011
    Date of Patent: July 8, 2014
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Hiroshi Watanabe, Yasuyuki Okimura, Shinji Ban, Takeshi Mitsuoka
  • Patent number: 8617433
    Abstract: A conductive sintered oxide including: a first crystal phase represented by RE14Al2O9 and a second crystal phase having a perovskite structure represented by (RE21-cSLc)(AlxM1y)O3. RE1 is a first element group consisting of Yb and/or Lu and at least one element selected from Group IIIA elements excluding Yb, Lu and La. RE2 is a second element group consisting of at least one element selected from Group IIIA elements excluding La and including at least one of the elements constituting the first element group RE1. SL is an element group consisting of at least one of Sr, Ca and Mg and which includes Sr as a main element, and M1 is an element group consisting of at least one element selected from Groups IVA, VA, VIA, VIIA and VIII excluding Cr. The coefficient c is in the range of 0.18<c<0.50, and the coefficients x and y are in the range of 0.95?x+y?1.1.
    Type: Grant
    Filed: August 16, 2011
    Date of Patent: December 31, 2013
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Hiroshi Watanabe, Yasayuki Okimura, Shinji Ban, Takeshi Mitsuoka
  • Patent number: 8617432
    Abstract: A sintered electroconductive oxide forming a thermistor element has a first crystal phase having a composition represented by RE14Al2O9 and a second crystal phase having a perovskite structure represented by (RE21-aSLa)MO3. The factor a of the second crystal phase is: 0.18<a<0.50, wherein RE1 represents at least one of Yb and Lu and at least one species selected from among group 3A elements excluding Yb, Lu, and La; RE2 represents at least one species selected from among group 3A elements excluding La and which contains at least one species selected from the group RE1; M represents Al and at least one species selected from group 4A to 7A, and 8 elements; and SL represents Sr, Ca, and Mg, with at least Sr being included at a predominant proportion by mole.
    Type: Grant
    Filed: February 18, 2010
    Date of Patent: December 31, 2013
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Yasuyuki Okimura, Shinji Ban, Hiroshi Watanbe, Takeshi Mitsuoka
  • Publication number: 20130314544
    Abstract: An imaging device includes pixels configured to sequentially output image signals for an infrared radiation having a first wavelength, an infrared radiation having a second wavelength and an infrared radiation having a third wavelength. A first pixel has the sensitivity to a first color of a primary color and outputting a first signal in response to reception of the infrared radiation having the shortest wavelength of the first wavelength, the second wavelength and the third wavelength. A second pixel has the sensitivity to a second color of the primary color and outputting a second signal in response to the reception of the infrared radiation having the shortest wavelength. A discriminating circuit is configured to compare the first signal and the second signal with each other to discriminate a reception timing of an infrared radiation having a selected wavelength in response to a relative sensitivity ratio.
    Type: Application
    Filed: June 27, 2012
    Publication date: November 28, 2013
    Inventor: Shinji Ban
  • Publication number: 20120043513
    Abstract: A conductive sintered oxide including: a first crystal phase represented by RE14Al2O9 and a second crystal phase having a perovskite structure represented by (RE21-cSLc)(AlxM1y)O3. RE1 is a first element group consisting of Yb and/or Lu and at least one element selected from Group IIIA elements excluding Yb, Lu and La. RE2 is a second element group consisting of at least one element selected from Group IIIA elements excluding La and including at least one of the elements constituting the first element group RE1. SL is an element group consisting of at least one of Sr, Ca and Mg and which includes Sr as a main element, and M1 is an element group consisting of at least one element selected from Groups IVA, VA, VIA, VIIA and VIII excluding Cr. The coefficient c is in the range of 0.18<c<0.50, and the coefficients x and y are in the range of 0.95?x+y?1.1.
    Type: Application
    Filed: August 16, 2011
    Publication date: February 23, 2012
    Applicant: NGK SPARK PLUG CO., LTD.
    Inventors: Hiroshi WATANABE, Yasuyuki OKIMURA, Shinji BAN, Takeshi MITSUOKA
  • Publication number: 20120043511
    Abstract: A conductive sintered oxide which includes: a conductive crystal phase having a perovskite structure represented by (RE1-cSrc)MdO3, in which RE is a group of elements consisting of Yb and/or Lu and at least one element selected from Group IIIA elements excluding Yb, Lu and La, and M is a group of elements consisting of Al and at least one element selected from Groups IVA, VA, VIA, VIIA and VIII, a first insulating crystal phase represented by RE2O3, and a second insulating crystal phase represented by SrAl2O4. The conductive crystal phase has a coefficient c satisfying 0.18<c<0.50 and has a coefficient d satisfying 0.67?d?0.93. A content of a third insulating crystal phase represented by RE4Al2O9, the content of which may be zero, is smaller than the content of each of the first and second insulating crystal phases.
    Type: Application
    Filed: August 16, 2011
    Publication date: February 23, 2012
    Applicant: NGK SPARK PLUG CO., LTD.
    Inventors: Hiroshi WATANABE, Yasuyuki OKIMURA, Shinji BAN, Takeshi MITSUOKA
  • Publication number: 20110220854
    Abstract: A sintered electroconductive oxide (1) forming a thermistor element (2) has a first crystal phase having a composition represented by RE14Al2O9 and a second crystal phase having a perovskite structure represented by (RE21-aSLa)MO3, and that the factor a of the second crystal phase satisfies the following condition: 0.18<a<0.50, wherein RE1 represents a first element group consisting of at least one of Yb and Lu and at least one species selected from among group 3A elements excluding Yb, Lu, and La; RE2 represents a second element group which contains at least one species selected from among group 3A elements excluding La and which contains at least one species selected from the first element group RE1; M represents an element group consisting of Al and at least one species selected from group 4A to 7A, and 8 elements; and SL represents an element group consisting of Sr, Ca, and Mg, with at least Sr being included at a predominant proportion by mole.
    Type: Application
    Filed: February 18, 2010
    Publication date: September 15, 2011
    Applicant: NGK SPARK PLUG CO., LTD.
    Inventors: Yasuyuki Okimura, Shinji Ban, Hiroshi Watanabe, Takeshi Mitsuoka