Patents by Inventor Shinji Matsumoto

Shinji Matsumoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11217410
    Abstract: A relay driver circuit is connected between an upper stage relay and a lower stage relay and is configured to be driven in response to driving of the upper relay. The relay driver circuit drives the lower stage relay. The relay driver circuit includes a semiconductor component, a control input line, a protective component, and a buffer circuit. The semiconductor component switches on and off the lower relay. The control input line is electrically connected to a control terminal of the semiconductor component. A power supply voltage is applied to the control input line via the upper stage relay. The protective component is connected in the control input line to protect the semiconductor component. The buffer circuit is connected between the protective component in the control input line and the control terminal of the semiconductor component to compensate for a voltage drop due to the protective component.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: January 4, 2022
    Assignees: SUMITOMO WIRING SYSTEMS, LTD., TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Shinji Aoyama, Hiroshi Kimoto, Shinji Oshita, Nobutoshi Hagiwara, Kenichi Takayoshi, Hiroki Onoyama, Takumi Matsumoto
  • Patent number: 11209766
    Abstract: A cleaning device includes a conveyance member, an agitation member, and an accommodation unit. The conveyance member extends in a width direction of an image bearing member orthogonal to a moving direction of the image bearing member, and conveys toner in the width direction by rotation. The accommodation unit includes a wall portion located inside a rotation orbit of an outermost peripheral portion of the agitation member, downstream of the collection member and upstream of the conveyance member in a rotation direction of the agitation member when viewed in a rotation axis direction of the conveyance member.
    Type: Grant
    Filed: October 12, 2020
    Date of Patent: December 28, 2021
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yuichiro Inaba, Norihiro Matsumoto, Shohei Ishio, Keisuke Ishizumi, Shinji Katagiri
  • Patent number: 11171479
    Abstract: A superconducting magnet device including a superconducting coil formed of a high-temperature superconducting wire, a power supply which supplies current to the superconducting coil, and a protector capable of forming a short-circuit path which short-circuits both ends of the superconducting coil to each other is installed. Current is made to flow from the power supply to the superconducting coil in a superconducting state, and the superconducting coil thereby generates a magnetic field. After the magnetic field is generated, when an abnormality of the superconducting magnet device is detected, or when the power supply and the superconducting coil are disconnected from each other, the short-circuit path is formed by the protector.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: November 9, 2021
    Assignees: RIKEN, NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Masato Takahashi, Hideaki Maeda, Kenjiro Hashi, Gen Nishijima, Shinji Matsumoto, Takashi Noguchi, Tadashi Shimizu
  • Publication number: 20210328046
    Abstract: A coating liquid for forming an oxide, the coating liquid including: silicon (Si); and B element, which is at least one alkaline earth metal, wherein when a concentration of an element of the Si is denoted by CA mg/L and a total of concentrations of the B element is denoted by CB mg/L, a total of concentrations of sodium (Na) and potassium (K) in the coating liquid is (CA+CB)/(1×102) mg/L or less and a total of concentrations of chromium (Cr), molybdenum (Mo), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu) in the coating liquid is (CA+CB)/(1×102) mg/L or less.
    Type: Application
    Filed: November 26, 2019
    Publication date: October 21, 2021
    Inventors: Ryoichi SAOTOME, Naoyuki UEDA, Yuki NAKAMURA, Yukiko ABE, Shinji MATSUMOTO, Yuji SONE, Minehide KUSAYANAGI
  • Publication number: 20210317459
    Abstract: The purpose of the present invention is to provide an antisense oligonucleotide that targets an ARL4C molecule and exerts an antitumor effect in vivo, and a nucleic acid drug using the antisense oligonucleotide. An antisense oligonucleotide that has a base sequence consisting of at least 10 consecutive bases contained in the base sequence represented by SEQ ID NO: 1. This antisense oligonucleotide targets an ARL4C molecule and thus can inhibit the expression of ARL4C in a tumor cell in vitro and suppress the migration and proliferation thereof. When systemically administered, moreover, the antisense oligonucleotide can exert an excellent antitumor effect in vivo too.
    Type: Application
    Filed: September 4, 2019
    Publication date: October 14, 2021
    Inventors: Akira KIKUCHI, Shinji MATSUMOTO, Satoshi OBIKA, Yuya KASAHARA, Takumi FUKUMOTO
  • Publication number: 20210305394
    Abstract: A field-effect transistor including: a source electrode and a drain electrode; a gate electrode; a semiconductor layer; and a gate insulating layer, wherein the gate insulating layer is an oxide insulator film including A element and B element, the A element being one or more selected from the group consisting of Zr and Hf and the B element being one or more selected from the group consisting of Be and Mg.
    Type: Application
    Filed: July 19, 2019
    Publication date: September 30, 2021
    Applicant: Ricoh Company, Ltd.
    Inventors: Naoyuki UEDA, Yuki NAKAMURA, Yukiko ABE, Shinji MATSUMOTO, Yuji SONE, Ryoichi SAOTOME, Sadanori ARAE, Minehide KUSAYANAGI
  • Patent number: 11069780
    Abstract: A coating liquid for forming an oxide, the coating liquid including: A element, which is at least one alkaline earth metal; and B element, which is at least one selected from the group consisting of gallium (Ga), scandium (Sc), yttrium (Y), and lanthanoid, wherein when a total of concentrations of the A element is denoted by CA mg/L and a total of concentrations of the B element is denoted by CB mg/L, a total of concentrations of sodium (Na) and potassium (K) in the coating liquid is (CA+CB)/103 mg/L or less and a total of concentrations of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu) in the coating liquid is (CA+CB)/103 mg/L or less.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: July 20, 2021
    Assignee: Ricoh Company, Ltd.
    Inventors: Ryoichi Saotome, Naoyuki Ueda, Yuichi Ando, Yuki Nakamura, Yukiko Abe, Shinji Matsumoto, Yuji Sone, Sadanori Arae, Minehide Kusayanagi
  • Patent number: 11049951
    Abstract: A coating liquid for forming an oxide or oxynitride insulator film, the coating liquid including: A element; at least one selected from the group consisting of B element and C element; and a solvent, wherein the A element is at least one selected from the group consisting of Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B element is at least one selected from the group consisting of Ga, Ti, Zr, and Hf, the C element is at least one selected from the group consisting of Group 2 elements in a periodic table, and the solvent includes at least one selected from the group consisting of an organic solvent having a flash point of 21° C. or more but less than 200° C. and water.
    Type: Grant
    Filed: May 29, 2019
    Date of Patent: June 29, 2021
    Assignee: Ricoh Company, Ltd.
    Inventors: Naoyuki Ueda, Yuki Nakamura, Yukiko Abe, Shinji Matsumoto, Yuji Sone, Ryoichi Saotome, Sadanori Arae, Minehide Kusayanagi, Yuichi Ando
  • Publication number: 20210184585
    Abstract: A power supply circuit generating an output voltage at a target level and applying the output voltage to a load. The power supply circuit includes a transformer including a primary coil, a secondary coil and an auxiliary coil, a transistor coupled to the primary coil, and a switching control circuit configured to control switching of the transistor based on a voltage from the auxiliary coil. The switching control circuit includes a determination circuit configured to determine whether to shift to a burst mode operation based on whether the load is a light load, and a burst control circuit. The burst control circuit has a clock circuit configured to measure a stop period during which the switching of the transistor is stopped in the burst mode operation, and a control circuit configured to, upon detecting that the stop period is longer than a first time period, perform control to decrease the stop period.
    Type: Application
    Filed: February 24, 2021
    Publication date: June 17, 2021
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventor: Shinji MATSUMOTO
  • Publication number: 20210167684
    Abstract: A switching control circuit for controlling switching of a transistor in a power supply circuit, such that the power supply circuit generates an output voltage at a target level. The switching control circuit includes an overload detection circuit detecting that a load of the power supply circuit is in an overload condition, when a voltage according to the output voltage reaches a predetermined level, an overcurrent detection circuit detecting that a load current is an overcurrent, when a current according to the load current reaches a predetermined value, an adjustment circuit decreasing the predetermined value, when a first time period has elapsed since the load becomes in the overload condition, a drive circuit driving the transistor such that the output voltage reaches the target level, and a control circuit causing the drive circuit to stop driving the transistor, after the load becomes in the overload condition or the load current becomes the overcurrent.
    Type: Application
    Filed: October 23, 2020
    Publication date: June 3, 2021
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventor: Shinji MATSUMOTO
  • Patent number: 11018262
    Abstract: A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed between the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, the source electrode and the drain electrode each including a metal region formed of a metal and an oxide region formed of one or more metal oxides, and a part of the oxide region in each of the source electrode and the drain electrode being in contact with the active layer, and rest of the oxide region being in contact with one or more components other than the active layer.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: May 25, 2021
    Assignee: Ricoh Company, Ltd.
    Inventors: Minehide Kusayanagi, Naoyuki Ueda, Yuki Nakamura, Yukiko Abe, Shinji Matsumoto, Yuji Sone, Ryoichi Saotome, Sadanori Arae
  • Patent number: 10974251
    Abstract: A pulverizing device includes: a housing; a pulverization table configured to rotate inside the housing; and a throat, disposed inside the housing on a radially outer side of the pulverization table, for forming an upward air flow. The throat includes: an inner ring extending along an outer periphery of the pulverization table; an outer ring, disposed on a radially outer side of the inner ring so as to form an annular flow passage between the inner ring and the outer ring; and a plurality of throat vanes disposed between the inner ring and the outer ring. The following expressions are satisfied: 2.0?L/d?4.0; and 0.5?H/d?1.5, where H is a gap between the inner ring and the outer ring with respect to a radial direction, L is a length of the throat vanes, and ‘d’ is a distance between adjacent two of the throat vanes.
    Type: Grant
    Filed: January 13, 2017
    Date of Patent: April 13, 2021
    Assignee: MITSUBISHI POWER, LTD.
    Inventors: Jun Kashima, Shinji Matsumoto, Kosuke Kitakaze, Yasuhito Onishi, Hiroaki Kanemoto
  • Patent number: 10923569
    Abstract: A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0?x<100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: February 16, 2021
    Assignee: RICOH COMPANY, LTD.
    Inventors: Yukiko Abe, Naoyuki Ueda, Yuki Nakamura, Shinji Matsumoto, Yuji Sone, Mikiko Takada, Ryoichi Saotome
  • Publication number: 20210043679
    Abstract: An inorganic EL element including: an anode; a hole transporting layer; a light emitting layer; an electron transporting layer; and a cathode, the anode, the hole transporting layer, the light emitting layer, the electron transporting layer, and the cathode being stacked, wherein the hole transporting layer is an oxide film, the light emitting layer is an oxide film, and the electron transporting layer is an oxide film.
    Type: Application
    Filed: March 13, 2019
    Publication date: February 11, 2021
    Inventors: Naoyuki UEDA, Yuki NAKAMURA, Yukiko ABE, Shinji MATSUMOTO, Yuji SONE, Ryoichi SAOTOME, Sadanori ARAE, Minehide KUSAYANAGI, Yuichi ANDO
  • Patent number: 10882050
    Abstract: The present invention improves the even distribution of a powder to a pulverized coal pipe. A rotary classifier including: a rotary shaft rotatably supported around a rotational axis extending in a vertical direction; a frame body supported by the rotary shaft and including an opening on the outer periphery of the frame body; a plurality of powder outlets provided along the rotation direction and opening on the upper section of the frame body; a plurality of blades extending in the vertical direction at the opening on the outer periphery of the frame body and provided along the rotation direction; and an annular member that serves as a constricting section provided so as to narrow the interval from the blades to the rotary shaft.
    Type: Grant
    Filed: June 14, 2017
    Date of Patent: January 5, 2021
    Assignee: MITSUBISHI POWER, LTD.
    Inventors: Taku Miyazaki, Takuichiro Daimaru, Kenichi Arima, Shinji Matsumoto, Yuta Takahashi, Kazushi Fukui, Takashi Iwata
  • Patent number: 10818770
    Abstract: Method for producing field-effect transistor including source electrode and drain electrode, gate electrode, active layer, and gate insulating layer, the method including etching the gate insulating layer, wherein the gate insulating layer is metal oxide including A-element and at least one selected from B-element and C-element, the A-element is at least one selected from Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B-element is at least one selected from Ga, Ti, Zr, and Hf, the C-element is at least one selected from Group 2 elements in periodic table, etching solution A is used when at least one selected from the source electrode and the drain electrode, the gate electrode, and the active layer is formed, and etching solution B that is etching solution having same type as the etching solution A is used when the gate insulating layer is etched.
    Type: Grant
    Filed: July 22, 2019
    Date of Patent: October 27, 2020
    Assignee: Ricoh Company, Ltd.
    Inventors: Minehide Kusayanagi, Naoyuki Ueda, Yuki Nakamura, Yukiko Abe, Shinji Matsumoto, Yuji Sone, Ryoichi Saotome, Sadanori Arae
  • Patent number: 10818705
    Abstract: A method for manufacturing a field effect transistor including a gate-insulating layer, an active layer, and a passivation layer. The method includes a first process of forming the gate-insulating layer; and a second process of forming the passivation layer. At least one of the first process and the second process includes: forming a first oxide containing an alkaline earth metal and at least one of gallium, scandium, yttrium, and a lanthanoid; and etching the first oxide by use of a first solution containing at least one of hydrochloric, acid, oxalic acid, nitric acid, phosphoric acid, acetic acid, sulfuric acid, and hydrogen peroxide water.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: October 27, 2020
    Assignee: RICOH COMPANY, LTD.
    Inventors: Yuji Sone, Naoyuki Ueda, Yuki Nakamura, Yukiko Abe, Shinji Matsumoto, Ryoichi Saotome, Sadanori Arae, Minehide Kusayanagi
  • Patent number: 10790308
    Abstract: A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to transfer an electrical signal; an active layer, which is formed between the source electrode and the drain electrode; and a gate insulating layer, which is formed between the gate electrode and the active layer, the active layer including at least two kinds of oxide layers including layer A and layer B, and the active layer satisfying at least one of condition (1) and condition (2) below: condition (1): the active layer includes 3 or more oxide layers including 2 or more of the layer A; and condition (2): a band-gap of the layer A is lower than a band-gap of the layer B and an oxygen affinity of the layer A is equal to or higher than an oxygen affinity of the layer B.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: September 29, 2020
    Assignee: Ricoh Company, Ltd.
    Inventors: Naoyuki Ueda, Yuki Nakamura, Yukiko Abe, Shinji Matsumoto, Yuji Sone, Ryoichi Saotome, Sadanori Arae, Minehide Kusayanagi
  • Publication number: 20200303561
    Abstract: A field-effect transistor including a semiconductor layer formed of an n-type metal oxide semiconductor, wherein the n-type metal oxide semiconductor includes indium oxide, wherein the indium oxide is n-type doped through introduction of one or more kinds of cations as dopants, and wherein the n-type metal oxide semiconductor has a peak detected at an angle corresponding to a (222) plane of indium oxide having a bixbite structure in an X-ray diffraction method using a two-dimensional detector.
    Type: Application
    Filed: March 18, 2020
    Publication date: September 24, 2020
    Inventors: Yukiko ABE, Yuichi ANDO, Yuki NAKAMURA, Shinji MATSUMOTO, Yuji SONE, Naoyuki UEDA, Ryoichi SAOTOME, Sadanori ARAE, Minehide KUSAYANAGI
  • Patent number: 10766169
    Abstract: To provide a resin mold which is excellent in adhesion to a substrate, excellent in release properties from a transfer material resin, further excellent in durability of the resin mold itself, and which endures repetition transfer to the transfer material resin, a resin mold of the invention is a resin mold having a fine concavo-convex structure on the surface, and is characterized in that the fluorine element concentration (Es) in a resin mold surface portion is the average fluorine element concentration (Eb) in the resin forming the resin mold or more.
    Type: Grant
    Filed: March 19, 2018
    Date of Patent: September 8, 2020
    Assignee: ASAHI KASEI E-MATERIALS CORPORATION
    Inventors: Shinji Matsumoto, Jun Koike