Abstract: (Object) To miniaturize a field-effect transistor. (Means of Achieving the Object) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.

Abstract: Provided is a technique capable of exhibiting high seizure resistance even if a scratch is formed. The sliding member of the present invention is a sliding member including a base layer and a resin coating layer formed on the base layer, wherein the resin coating layer is formed of a polyamide-imide resin as a binder, barium sulfate particles, molybdenum disulfide particles having an average particle diameter which is 1.0 time or more and 2.8 times or less the average particle diameter of the barium sulfate particles, and unavoidable impurities.

Abstract: To provide a technique capable of realizing an appropriate wear resistance in a resin coating layer. The sliding member of the present invention is a sliding member including a base layer and a resin coating layer formed on the base layer, wherein the resin coating layer is formed of a polyamide-imide resin as a binder, barium sulfate particles, molybdenum disulfide particles, and unavoidable impurities, wherein the resin coating layer is composed of a plurality of overcoated application layers, and wherein the plurality of application layers are different from each other in content of hard particles.

Abstract: A superconducting magnet device including a superconducting coil formed of a high-temperature superconducting wire, a power supply which supplies current to the superconducting coil, and a protector capable of forming a short-circuit path which short-circuits both ends of the superconducting coil to each other is installed. Current is made to flow from the power supply to the superconducting coil in a superconducting state, and the superconducting coil thereby generates a magnetic field. After the magnetic field is generated, when an abnormality of the superconducting magnet device is detected, or when the power supply and the superconducting coil are disconnected from each other, the short-circuit path is formed by the protector.

Abstract: A coating liquid for forming an oxide, the coating liquid including: silicon (Si); and B element, which is at least one alkaline earth metal, wherein when a concentration of an element of the Si is denoted by CA mg/L and a total of concentrations of the B element is denoted by CB mg/L, a total of concentrations of sodium (Na) and potassium (K) in the coating liquid is (CA+CB)/(1×102) mg/L or less and a total of concentrations of chromium (Cr), molybdenum (Mo), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu) in the coating liquid is (CA+CB)/(1×102) mg/L or less.

Abstract: The purpose of the present invention is to provide an antisense oligonucleotide that targets an ARL4C molecule and exerts an antitumor effect in vivo, and a nucleic acid drug using the antisense oligonucleotide. An antisense oligonucleotide that has a base sequence consisting of at least 10 consecutive bases contained in the base sequence represented by SEQ ID NO: 1. This antisense oligonucleotide targets an ARL4C molecule and thus can inhibit the expression of ARL4C in a tumor cell in vitro and suppress the migration and proliferation thereof. When systemically administered, moreover, the antisense oligonucleotide can exert an excellent antitumor effect in vivo too.

Abstract: A field-effect transistor including: a source electrode and a drain electrode; a gate electrode; a semiconductor layer; and a gate insulating layer, wherein the gate insulating layer is an oxide insulator film including A element and B element, the A element being one or more selected from the group consisting of Zr and Hf and the B element being one or more selected from the group consisting of Be and Mg.

Abstract: A coating liquid for forming an oxide, the coating liquid including: A element, which is at least one alkaline earth metal; and B element, which is at least one selected from the group consisting of gallium (Ga), scandium (Sc), yttrium (Y), and lanthanoid, wherein when a total of concentrations of the A element is denoted by CA mg/L and a total of concentrations of the B element is denoted by CB mg/L, a total of concentrations of sodium (Na) and potassium (K) in the coating liquid is (CA+CB)/103 mg/L or less and a total of concentrations of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu) in the coating liquid is (CA+CB)/103 mg/L or less.

Abstract: A coating liquid for forming an oxide or oxynitride insulator film, the coating liquid including: A element; at least one selected from the group consisting of B element and C element; and a solvent, wherein the A element is at least one selected from the group consisting of Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B element is at least one selected from the group consisting of Ga, Ti, Zr, and Hf, the C element is at least one selected from the group consisting of Group 2 elements in a periodic table, and the solvent includes at least one selected from the group consisting of an organic solvent having a flash point of 21° C. or more but less than 200° C. and water.

Abstract: A power supply circuit generating an output voltage at a target level and applying the output voltage to a load. The power supply circuit includes a transformer including a primary coil, a secondary coil and an auxiliary coil, a transistor coupled to the primary coil, and a switching control circuit configured to control switching of the transistor based on a voltage from the auxiliary coil. The switching control circuit includes a determination circuit configured to determine whether to shift to a burst mode operation based on whether the load is a light load, and a burst control circuit. The burst control circuit has a clock circuit configured to measure a stop period during which the switching of the transistor is stopped in the burst mode operation, and a control circuit configured to, upon detecting that the stop period is longer than a first time period, perform control to decrease the stop period.

Abstract: A switching control circuit for controlling switching of a transistor in a power supply circuit, such that the power supply circuit generates an output voltage at a target level. The switching control circuit includes an overload detection circuit detecting that a load of the power supply circuit is in an overload condition, when a voltage according to the output voltage reaches a predetermined level, an overcurrent detection circuit detecting that a load current is an overcurrent, when a current according to the load current reaches a predetermined value, an adjustment circuit decreasing the predetermined value, when a first time period has elapsed since the load becomes in the overload condition, a drive circuit driving the transistor such that the output voltage reaches the target level, and a control circuit causing the drive circuit to stop driving the transistor, after the load becomes in the overload condition or the load current becomes the overcurrent.

Abstract: A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed between the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, the source electrode and the drain electrode each including a metal region formed of a metal and an oxide region formed of one or more metal oxides, and a part of the oxide region in each of the source electrode and the drain electrode being in contact with the active layer, and rest of the oxide region being in contact with one or more components other than the active layer.

Abstract: A pulverizing device includes: a housing; a pulverization table configured to rotate inside the housing; and a throat, disposed inside the housing on a radially outer side of the pulverization table, for forming an upward air flow. The throat includes: an inner ring extending along an outer periphery of the pulverization table; an outer ring, disposed on a radially outer side of the inner ring so as to form an annular flow passage between the inner ring and the outer ring; and a plurality of throat vanes disposed between the inner ring and the outer ring. The following expressions are satisfied: 2.0?L/d?4.0; and 0.5?H/d?1.5, where H is a gap between the inner ring and the outer ring with respect to a radial direction, L is a length of the throat vanes, and ‘d’ is a distance between adjacent two of the throat vanes.

Abstract: A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0?x<100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.

Abstract: An inorganic EL element including: an anode; a hole transporting layer; a light emitting layer; an electron transporting layer; and a cathode, the anode, the hole transporting layer, the light emitting layer, the electron transporting layer, and the cathode being stacked, wherein the hole transporting layer is an oxide film, the light emitting layer is an oxide film, and the electron transporting layer is an oxide film.

Abstract: The present invention improves the even distribution of a powder to a pulverized coal pipe. A rotary classifier including: a rotary shaft rotatably supported around a rotational axis extending in a vertical direction; a frame body supported by the rotary shaft and including an opening on the outer periphery of the frame body; a plurality of powder outlets provided along the rotation direction and opening on the upper section of the frame body; a plurality of blades extending in the vertical direction at the opening on the outer periphery of the frame body and provided along the rotation direction; and an annular member that serves as a constricting section provided so as to narrow the interval from the blades to the rotary shaft.

Abstract: Method for producing field-effect transistor including source electrode and drain electrode, gate electrode, active layer, and gate insulating layer, the method including etching the gate insulating layer, wherein the gate insulating layer is metal oxide including A-element and at least one selected from B-element and C-element, the A-element is at least one selected from Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B-element is at least one selected from Ga, Ti, Zr, and Hf, the C-element is at least one selected from Group 2 elements in periodic table, etching solution A is used when at least one selected from the source electrode and the drain electrode, the gate electrode, and the active layer is formed, and etching solution B that is etching solution having same type as the etching solution A is used when the gate insulating layer is etched.

Abstract: A method for manufacturing a field effect transistor including a gate-insulating layer, an active layer, and a passivation layer. The method includes a first process of forming the gate-insulating layer; and a second process of forming the passivation layer. At least one of the first process and the second process includes: forming a first oxide containing an alkaline earth metal and at least one of gallium, scandium, yttrium, and a lanthanoid; and etching the first oxide by use of a first solution containing at least one of hydrochloric, acid, oxalic acid, nitric acid, phosphoric acid, acetic acid, sulfuric acid, and hydrogen peroxide water.

Abstract: A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to transfer an electrical signal; an active layer, which is formed between the source electrode and the drain electrode; and a gate insulating layer, which is formed between the gate electrode and the active layer, the active layer including at least two kinds of oxide layers including layer A and layer B, and the active layer satisfying at least one of condition (1) and condition (2) below: condition (1): the active layer includes 3 or more oxide layers including 2 or more of the layer A; and condition (2): a band-gap of the layer A is lower than a band-gap of the layer B and an oxygen affinity of the layer A is equal to or higher than an oxygen affinity of the layer B.