Abstract: A pattern forming method includes forming a resist film on a target film to be processed, which is formed on a substrate; and forming a basic pattern part in the resist film by multiple exposure using photomasks, wherein each exposure process is performed at an amount of exposure smaller than a threshold assigned to the resist film; and the resist film is developed after the total sum of the amounts of exposure through a plurality of exposure processes exceeds the threshold, so that the basic pattern part including a hole shape, which corresponds to each area where the total amount of exposure through the exposure processes via the photomasks exceeds the threshold, is formed in the resist film. The method also includes performing etching via the basic pattern part so as to form a desired pattern in the target film.

Abstract: An objective of this invention is to solve the problem caused by a difference in a silicon layer film thickness between a memory cell region and a region other than the memory cell region. For solving the problem, while maintaining a structure where an MOS type transistor in a memory cell region is in a floating state and an MOS type transistor in the region other than the memory cell region is not in a floating state, a film thickness of semiconductor layers having a body regions is made equal in these MOS type transistors.

Abstract: A nonvolatile semiconductor storage device is provided in which memory cells comprising PN junction diodes having satisfactory rectifying characteristics are arranged in three dimensions. The semiconductor storage device includes: a first wire which extends in one direction; a second wire which extends in a direction intersecting the first wire; and a memory cell which is positioned at a portion of intersection of the first wire with the second wire between the first wire and the second wire, the memory cell comprising a storage element and a PN junction diode connected thereto, positioned on a side of the second wire used in selecting the memory cell, and a P-type semiconductor forming the PN junction diode forms a portion of the second wire, wherein a plurality of structures, each structure comprising the first wire, the second wire, and the memory cell is provided three-dimensionally.

Abstract: In a fabric to assist a vehicle to run in the presence of snow, sand, or mud, or in an unleveled land, a core fabric is formed by weaving the weft and the warp. An upper convexity warp which is disposed over the core fabric forming warp and is woven with an upper convexity weft disposed on the core fabric forming weft, and/or a lower convexity warp which is disposed under the core fabric forming warp and is woven with a lower convexity weft disposed under the core fabric forming weft, to form a convexity. The upper or lower convexity warp is woven with one or plurality of the core fabric forming wefts to form a woven portion.

Abstract: In a fabric to assist a vehicle to run in the presence of snow, sand, or mud, or in an unleveled land, a core fabric is formed by weaving the weft and the warp. An upper convexity warp which is disposed over the core fabric forming warp and is woven with an upper convexity weft disposed on the core fabric forming weft, and/or a lower convexity warp which is disposed under the core fabric forming warp and is woven with a lower convexity weft disposed under the core fabric forming weft, to form a convexity. The upper or lower convexity warp is woven with one or plurality of the core fabric forming wefts to form a woven portion.

Abstract: An aromatic polyamide resin composition excellent in flowability and suitability for short-cycle molding and having high heat resistance is disclosed, which is a partly aromatic polyamide resin composition comprising 50 to 95% by weight of (A) a crystalline partly aromatic copolyamide resin containing one kind of aromatic monomer units, and 5 to 50% by weight of at least one of (B) a crystalline partly aromatic copolyamide resin containing at least two kinds of aromatic monomer units and (C) a noncrystalline partly aromatic polyamide resin.

Abstract: Disclosed is a process for preparing spherical polyamide having an average grain diameter of 100 .mu.m or less which comprises polymerizing monomers for preparing the polyamide under heating at a temperature higher than the melting points of the monomers and the polyamide while melting the monomers in a polymerization medium under stirring whereby dispersing the formed polyamide with fine particles in the polymerization medium and then cooling the resulting mixture.

Abstract: The invention provides a method of fabricating a semiconductor device, including the steps of (a) forming an impurity region at a surface of a silicon substrate, (b) depositing an insulative film over the silicon substrate, (c) forming a contact hole through the insulative film to expose the impurity region of the silicon substrate, (d) forming an electrode wiring over the contact hole, the electrode wiring comprising a refractory metal silicide film and a silicon film overlying on the metal silicide film, the metal silicide film overlying the exposed impurity region, (e) depositing a second insulative film over a resultant, (f) depositing a polysilicon film on the second insulative film, (g) patterning the polysilicon film to form an element, and (h) heat-treating a resultant at high temperature in oxidizing atmosphere. The step (h) is to be carried out at any time after the step (f) has been completed.

Abstract: An alignment accuracy check pattern includes a contact hole formed in an insulating film on a major surface of a semiconductor substrate in a region different from an element region, and a photoresist for patterning which is formed in at least part of the contact hole. A wiring layer is formed under the insulating film, and another insulating film is formed under the wiring layer.

Abstract: A resin composition comprising a polyarylene sulfide resin and at least one metal hydroxide containing 50% by weight or more of magnesium hydroxide, wherein the metal hydroxide is subjected to a surface treatment with a fatty acid or a silane coupling agent prior to addition with the polyarylene sulfide resin; or the composition further comprises glass fibers and talc.

Abstract: There is disclosed a polyarylene sulfide resin composition which comprises 100 parts by weight of a polyarylene sulfide resin and 5 to 300 parts by weight of metal hydroxides composed of 50% by weight or more of magnesium hydroxide, and may further containing 20 to 120 parts by weight of glass fibers and 30 to 80 parts by weight of talc.