Patents by Inventor Shinji Okazaki
Shinji Okazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11215558Abstract: A nanostructure array including a base body and a nanostructure formed on the base body, in which a plurality of the nanostructures are arranged on the nanostructure array, the nanostructure is made of a metal having a surface plasmon and a property of absorbing and releasing hydrogen, the base body is made of a hydrogen-responsive material that reacts with hydrogen to reversibly change from a conductor to a dielectric substance, and a surface plasmon resonance occurs by light incident on the nanostructure.Type: GrantFiled: February 18, 2020Date of Patent: January 4, 2022Assignees: NATIONAL UNIVERSITY CORPORATION YOKOHAMA NATIONAL UNIVERSITY, TOKYO OHKA KOGYO CO., LTD.Inventors: Yoshiaki Nishijima, Shinji Okazaki, Takaaki Beni, Naoki Yamasaku, Takeshi Iwai
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Patent number: 10863613Abstract: An EUV light generator including the following components: A. an electron storage ring including a first linear section and a second linear section; B. an electron supplier configured to supply the electron storage ring with an electron bunch; C. a high-frequency acceleration cavity disposed in the first linear section and configured to accelerate the electron bunch in such a way that a length Lez of the electron bunch satisfies “0.09 m?Lez?3 m;” and D. an undulator disposed in the second linear section and configured to output EUV light when the electron bunch enters the undulator.Type: GrantFiled: September 4, 2019Date of Patent: December 8, 2020Assignee: Gigaphoton Inc.Inventors: Shinji Okazaki, Osamu Wakabayashi
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Publication number: 20200264102Abstract: A nanostructure array including a base body and a nanostructure formed on the base body, in which a plurality of the nanostructures are arranged on the nanostructure array, the nanostructure is made of a metal having a surface plasmon and a property of absorbing and releasing hydrogen, the base body is made of a hydrogen-responsive material that reacts with hydrogen to reversibly change from a conductor to a dielectric substance, and a surface plasmon resonance occurs by light incident on the nanostructure.Type: ApplicationFiled: February 18, 2020Publication date: August 20, 2020Inventors: Yoshiaki NISHIJIMA, Shinji OKAZAKI, Takaaki BENI, Naoki YAMASAKU, Takeshi IWAI
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Publication number: 20190394868Abstract: An EUV light generator including the following components: A. an electron storage ring including a first linear section and a second linear section; B. an electron supplier configured to supply the electron storage ring with an electron bunch; C. a high-frequency acceleration cavity disposed in the first linear section and configured to accelerate the electron bunch in such a way that a length Lez of the electron bunch satisfies “0.09 m?Lez?3 m;” and D. an undulator disposed in the second linear section and configured to output EUV light when the electron bunch enters the undulator.Type: ApplicationFiled: September 4, 2019Publication date: December 26, 2019Applicant: Gigaphoton Inc.Inventors: Shinji OKAZAKI, Osamu WAKABAYASHI
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Patent number: 10512149Abstract: An extreme UV light generation device may include: a chamber having a plasma generation region at an inside of the chamber, the chamber receiving a target substance externally supplied to the plasma generation region; an outlet port provided on the chamber; a magnetic field generating unit configured to generate a magnetic field to converge cations on the outlet port, the cations being generated from the target substance that has been turned into plasma in the plasma generation region; an electron emission unit configured to emit electrons neutralizing the cations; and an exhaust tube joined to the outlet port and through which a neutralized substance obtained by neutralizing the cations flows.Type: GrantFiled: December 10, 2018Date of Patent: December 17, 2019Assignee: Gigaphoton Inc.Inventors: Tsukasa Hori, Shinji Okazaki
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Publication number: 20190116655Abstract: An extreme UV light generation device may include: a chamber having a plasma generation region at an inside of the chamber, the chamber receiving a target substance externally supplied to the plasma generation region; an outlet port provided on the chamber; a magnetic field generating unit configured to generate a magnetic field to converge cations on the outlet port, the cations being generated from the target substance that has been turned into plasma in the plasma generation region; an electron emission unit configured to emit electrons neutralizing the cations; and an exhaust tube joined to the outlet port and through which a neutralized substance obtained by neutralizing the cations flows.Type: ApplicationFiled: December 10, 2018Publication date: April 18, 2019Applicant: Gigaphoton Inc.Inventors: Tsukasa HORI, Shinji OKAZAKI
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Publication number: 20170272832Abstract: The present invention propose an broadcast reception system, wherein a program reception control apparatus is connected to Internet via a network interface to which a terminal apparatus carrying by a user. The broadcast received at an antenna is selected by a tuner, A/D converted, compressed at a compression unit, and encrypted at an encryption unit. The encrypted data from the encryption unit changed to packets at packet creation unit, and transmitted to the terminal apparatus via the network interface. A User is able to view the program in real time before the end of the broadcast for the program by successively creating data based on the received data, and transmitting them.Type: ApplicationFiled: July 8, 2013Publication date: September 21, 2017Inventors: Satoru MAEDA, Manabu ONISHI, Shinji OKAZAKI, Katsutoshi SAKAO
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Publication number: 20170149198Abstract: There is provided a light source system that may include a free electron laser apparatus, a light concentrating mirror, and a delaying optical system. The free electron laser apparatus may include an undulator, and may be configured to output a pulsed laser light beam toward an exposure apparatus. The light concentrating mirror may be configured to concentrate the pulsed laser light beam to enter the exposure apparatus. The delaying optical system may be provided in an optical path between the undulator and the light concentrating mirror, and may be configured to delay the pulsed laser light beam to allow an amount of delay of the pulsed laser light beam to be varied depending on a position in a beam cross-section of the pulsed laser light beam.Type: ApplicationFiled: February 7, 2017Publication date: May 25, 2017Applicant: GIGAPHOTON INC.Inventors: Osamu WAKABAYASHI, Shinji OKAZAKI, Akiyoshi SUZUKI
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Patent number: 9507248Abstract: A two-beam interference apparatus may include a wafer stage on which a wafer may be set, a beam splitter to split first laser light into second and third laser light having a beam intensity distribution elongated in a first direction within a surface of the wafer, and an optical system to guide the second and third laser light onto the wafer. The wafer is irradiated with the second laser light from a second direction perpendicular to the first direction, and the third laser light from a third direction perpendicular to the first direction but different from the second direction, to thereby cause interference of the second and third laser light on the wafer. This apparatus increases the accuracy of the two-beam interference exposure.Type: GrantFiled: November 20, 2012Date of Patent: November 29, 2016Assignee: Gigaphoton Inc.Inventors: Shinji Okazaki, Hakaru Mizoguchi, Junichi Fujimoto, Takashi Matsunaga, Kouji Kakizaki, Osamu Wakabayashi
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Publication number: 20150144809Abstract: A target supply device may include: a tank including a storage portion that stores a target material and a supply portion that is in communication with the storage portion, the target material flowing into the supply portion; a nozzle including a nozzle hole that is in communication with the supply portion to be fed with the target material; and a coating portion that covers a wall surface of the nozzle hole.Type: ApplicationFiled: February 2, 2015Publication date: May 28, 2015Inventors: Shinji OKAZAKI, Takanobu ISHIHARA, Yutaka SHIRAISHI
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Patent number: 8989225Abstract: A laser apparatus includes a master oscillator capable of outputting a laser beam having a spectrum that includes at least three wavelength peaks, a multi-wavelength oscillation control mechanism capable of controlling energy of each of the wavelength peaks, a spectrum detecting unit that detects the spectrum of the above-mentioned laser beam, and a controller that controls the multi-wavelength oscillation control mechanism based on a detection result detected by the spectrum detecting unit.Type: GrantFiled: August 21, 2012Date of Patent: March 24, 2015Assignee: Gigaphoton Inc.Inventors: Kouji Kakizaki, Shinji Okazaki, Osamu Wakabayashi, Takashi Onose, Shinichi Matsumoto
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Publication number: 20130298153Abstract: The present invention propose an broadcast reception system, wherein a program reception control apparatus is connected to Internet via a network interface to which a terminal apparatus carrying by a user. The broadcast received at an antenna is selected by a tuner, A/D converted, compressed at a compression unit, and encrypted at an encryption unit. The encrypted data from the encryption unit changed to packets at packet creation unit, and transmitted to the terminal apparatus via the network interface. A User is able to view the program in real time before the end of the broadcast for the program by successively creating data based on the received data, and transmitting them.Type: ApplicationFiled: July 8, 2013Publication date: November 7, 2013Inventors: Satoru MAEDA, Manabu ONISHI, Shinji OKAZAKI, Katsutoshi SAKAO
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Patent number: 8575547Abstract: The present invention provides an electron beam measurement technique for measuring the shapes or sizes of portions of patterns on a sample, or detecting a defect or the like. An electron beam measurement apparatus has a unit for irradiating the patterns delineated on a substrate by a multi-exposure method, and classifying the patterns in an acquired image into multiple groups according to an exposure history record. The exposure history record is obtained based on brightness of the patterns and a difference between white bands of the patterns.Type: GrantFiled: December 30, 2010Date of Patent: November 5, 2013Assignee: Hitachi High-Technologies CorporationInventors: Yasunari Sohda, Shoji Hotta, Shinji Okazaki, Muneyuki Fukuda
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Publication number: 20130215916Abstract: A laser apparatus includes a master oscillator capable of outputting a laser beam having a spectrum that includes at least three wavelength peaks, a multi-wavelength oscillation control mechanism capable of controlling energy of each of the wavelength peaks, a spectrum detecting unit that detects the spectrum of the above-mentioned laser beam, and a controller that controls the multi-wavelength oscillation control mechanism based on a detection result detected by the spectrum detecting unit.Type: ApplicationFiled: August 21, 2012Publication date: August 22, 2013Applicant: Gigaphoton Inc.Inventors: Kouji KAKIZAKI, Shinji OKAZAKI, Osamu WAKABAYASHI, Takashi ONOSE, Shinichi MATSUMOTO
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Patent number: 8064681Abstract: The present invention provides a reticle inspection technology that enables a relative position between patterns to be evaluated for a pattern that may become a defect at the time of exposure to a sample, such as a wafer, in the double patterning technology on the same layer.Type: GrantFiled: November 24, 2008Date of Patent: November 22, 2011Assignee: Hitachi High-Technologies CorporationInventors: Nobuhiro Okai, Shinji Okazaki, Yasunari Sohda, Yoshinori Nakayama
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Patent number: 7943903Abstract: A method for enabling management of fatal defects of semiconductor integrated patterns easily, the method enables storing of design data of each pattern designed by a semiconductor integrated circuit designer, as well as storing of design intent data having pattern importance levels ranked according to their design intents respectively. The method also enables anticipating of defects to be generated systematically due to the characteristics of the subject exposure system, etc. while each designed circuit pattern is exposed and delineated onto a wafer in a simulation carried out beforehand and storing those defects as hot spot information. Furthermore, the method also enables combining of the design intent data with hot spot information to limit inspection spots that might include systematic defects at high possibility with respect to the characteristics of the object semiconductor integrated circuit and shorten the defect inspection time significantly.Type: GrantFiled: January 29, 2009Date of Patent: May 17, 2011Assignee: Hitachi High-Technologies CorporationInventors: Shinji Okazaki, Shoji Hotta, Yasunari Sohda, Yoshinori Nakayama
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Publication number: 20110095183Abstract: The present invention provides an electron beam measurement technique for measuring the shapes or sizes of portions of patterns on a sample, or detecting a defect or the like. An electron beam measurement apparatus has a unit for irradiating the patterns delineated on a substrate by a multi-exposure method, and classifying the patterns in an acquired image into multiple groups according to an exposure history record. The exposure history record is obtained based on brightness of the patterns and a difference between white bands of the patterns.Type: ApplicationFiled: December 30, 2010Publication date: April 28, 2011Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yasunari SOHDA, Shoji HOTTA, Shinji OKAZAKI, Muneyuki FUKUDA
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Patent number: 7884325Abstract: The present invention provides an electron beam measurement technique for measuring the shapes or sizes of portions of patterns on a sample, or detecting a defect or the like. An electron beam measurement apparatus has a unit for irradiating the patterns delineated on a substrate by a multi-exposure method, and classifying the patterns in an acquired image into multiple groups according to an exposure history record. The exposure history record is obtained based on brightness of the patterns and a difference between white bands of the patterns.Type: GrantFiled: December 4, 2008Date of Patent: February 8, 2011Assignee: Hitachi High-Technologies CorporationInventors: Yasunari Sohda, Shoji Hotta, Shinji Okazaki, Muneyuki Fukuda
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Publication number: 20090206252Abstract: A method for enabling management of fatal defects of semiconductor integrated patterns easily, the method enables storing of design data of each pattern designed by a semiconductor integrated circuit designer, as well as storing of design intent data having pattern importance levels ranked according to their design intents respectively. The method also enables anticipating of defects to be generated systematically due to the characteristics of the subject exposure system, etc. while each designed circuit pattern is exposed and delineated onto a wafer in a simulation carried out beforehand and storing those defects as hot spot information. Furthermore, the method also enables combining of the design intent data with hot spot information to limit inspection spots that might include systematic defects at high possibility with respect to the characteristics of the object semiconductor integrated circuit and shorten the defect inspection time significantly.Type: ApplicationFiled: January 29, 2009Publication date: August 20, 2009Inventors: Shinji Okazaki, Shoji Hotta, Yasunari Sohda, Yoshinori Nakayama
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Publication number: 20090146057Abstract: The present invention provides an electron beam measurement technique for measuring the shapes or sizes of portions of patterns on a sample, or detecting a defect or the like. An electron beam measurement apparatus has a unit for irradiating the patterns delineated on a substrate by a multi-exposure method, and classifying the patterns in an acquired image into multiple groups according to an exposure history record. The exposure history record is obtained based on brightness of the patterns and a difference between white bands of the patterns.Type: ApplicationFiled: December 4, 2008Publication date: June 11, 2009Inventors: Yasunari SOHDA, Shoji Hotta, Shinji Okazaki, Muneyuki Fukuda