Abstract: According to one embodiment, a surface-emitting quantum cascade laser includes a substrate; a mesa portion of a semiconductor stacked body located on the substrate, and a reflective film located at a sidewall of the mesa portion. The mesa portion includes a light-emitting layer emitting light due to an intersubband transition of a carrier, and a photonic crystal layer including a two-dimensional diffraction grating.

Abstract: A quantum cascade laser of an embodiment includes a semiconductor stacked body in which a ridge waveguide is provided. The semiconductor stacked body includes an active layer including a quantum well region including a layer including Al; and the active layer emits laser light. The layer that includes Al includes first regions, and a second region interposed between the first regions; the first region includes Al oxide and reaches a prescribed depth inward from an outer edge of the active layer along a direction parallel to a surface of the active layer in a cross section orthogonal to the optical axis; and the second region does not include Al oxide.

Abstract: A semiconductor device includes a substrate including wiring at a surface thereof, a semiconductor element on a surface of the substrate, a first solder resist on the wiring, a bonding wire connecting the wiring and the semiconductor element, and a second solder resist. The first solder resist has an opening region at which a part of the wiring is non-covered by the first solder resist, and the bonding wire connects the wiring and the semiconductor element in the opening region. The second solder resist at least partially covers the non-covered part of the wiring in the opening region.

Abstract: The present invention provides a lithium secondary battery for an ISS which can be discharged at not less than 20 ItA when temperature is ?30 degrees centigrade and can be charged at not less than 50 ItA. The positive electrode material consists of a mixture of lithium-containing metal phosphate compound particles whose surfaces are coated with an amorphous carbon material and a conductive carbon material, in which atoms of the surface carbon materials are chemically bonded to one another. The negative electrode material contains at least one kind of particles selected from among graphite particles whose surfaces are coated with an amorphous carbon material, having a specific surface area of not less than 6 m2/g and soft carbon particles. A mixed electrolyte contains lithium hexafluorophosphate and lithium bis fluorosulfonyl imide.

Abstract: A semiconductor laser wafer includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a composition evaluation layer. The active layer is provided on the first semiconductor layer; multiple periods of pairs of a light-emitting multi-quantum well region and an injection multi-quantum well region are stacked in the active layer; the light-emitting multi-quantum well region is made of a first compound semiconductor and a second compound semiconductor. The second semiconductor layer is provided on the active layer. The composition evaluation layer is provided above the active layer and includes a first film and a second film; the first film is made of the first compound semiconductor and has a first thickness; and the second film is made of the second compound semiconductor and has a second thickness.

Abstract: A quantum cascade laser includes light-emitting quantum well layers configured to emit infrared laser light by an intersubband transition; and injection quantum well layers configured to relax carrier energy. The light-emitting quantum well layers and the injection quantum well layers are stacked alternately. The injection quantum well layers relax the energy of carriers injected from the light-emitting quantum well layers, respectively. The light-emitting quantum well layers and the injection quantum well layers including barrier layers. At least one barrier layer includes first and second regions of a first ternary compound semiconductor, and a binary compound semiconductor thin film. The binary compound semiconductor thin film is provided between the first and second regions. The first ternary compound semiconductor includes Group III atoms and a Group V atom. The binary compound semiconductor thin film includes one Group III atom of the first ternary compound semiconductor and the Group V atom.

Abstract: A positive-electrode material for a lithium secondary battery is provided. The material includes a lithium oxide compound or a complex oxide as reactive substance. The material also includes at least one type of carbon material, and optionally a binder. A first type of carbon material is provided as a coating on the reactive substance particles surface. A second type of carbon material is carbon black. And a third type of carbon material is a fibrous carbon material provided as a mixture of at least two types of fibrous carbon material different in fiber diameter and/or fiber length. Also, a method for preparing the material as well as lithium secondary batteries including the material is provided.

Abstract: A positive-electrode material for a lithium secondary battery is provided. The material includes a lithium oxide compound or a complex oxide as reactive substance. The material also includes at least one type of carbon material, and optionally a binder. A first type of carbon material is provided as a coating on the reactive substance particles surface. A second type of carbon material is carbon black. And a third type of carbon material is a fibrous carbon material provided as a mixture of at least two types of fibrous carbon material different in fiber diameter and/or fiber length. Also, a method for preparing the material as well as lithium secondary batteries including the material is provided.

Abstract: Provided are: a polymeric IgA-type recombinant antibody; a medicine containing this polymeric IgA-type recombinant antibody as an active ingredient; a method for producing this polymeric IgA type antibody, the method including the step of coexpressing an IgA-type antibody heavy-chain protein, an antibody light-chain protein, an antibody J-chain protein, and a secretory component protein within a single cell; and a method for improving the antigen-binding activity or neutralizing activity of this antibody, the method including the step of making an antibody into a polymeric IgA-type.

Abstract: The present invention provides a method for producing a lithium secondary battery in which peeling of an active substance can be prevented and the generation of metal powder can be prevented when a power collection foil is processed at an electrode production step. The method for producing the lithium secondary battery includes an electrode-producing step of producing a positive electrode and a negative electrode; a step of forming a group of electrodes by layering the positive electrode and the negative electrode on each other through a separator, or winding the positive electrode and the negative electrode through a separator; and a step of immersing the group of the electrodes in an electrolyte. The electrode-producing step has a boring step of forming a plurality of through-holes penetrating a power collection foil and having projected parts projected from at least a rear surface of the power collection foil.

Abstract: Provided is positive electrode material for a highly safe lithium-ion secondary battery that can charge and discharge a large current while having long service life. Disclosed are composite particles comprising: at least one carbon material selected from the group consisting of (i) fibrous carbon material, (ii) chain-like carbon material, and (iii) carbon material produced by linking together fibrous carbon material and chain-like carbon material; and lithium-containing phosphate, wherein at least one fine pore originating from the at least one carbon material opens to outside the composite particle. Preferably, the composite particles are coated with carbon. The fibrous carbon material is preferably a carbon nanotube with an average fiber size of 5 to 200 nm. The chain-like carbon material is preferably carbon black produced by linking, like a chain, primary particles with an average particle size of 10 to 100 nm.

Abstract: A semiconductor laser wafer includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a composition evaluation layer. The active layer is provided on the first semiconductor layer; multiple periods of pairs of a light-emitting multi-quantum well region and an injection multi-quantum well region are stacked in the active layer; the light-emitting multi-quantum well region is made of a first compound semiconductor and a second compound semiconductor. The second semiconductor layer is provided on the active layer. The composition evaluation layer is provided above the active layer and includes a first film and a second film; the first film is made of the first compound semiconductor and has a first thickness; and the second film is made of the second compound semiconductor and has a second thickness.

Abstract: A display device, program, and display method that even if the luminance is changed with respect to the previously set relationship between the ambient illuminance and the luminance of a display, are able to suppress a change in the previous relationship. A display device includes a display, an illuminance acquisition unit configured to acquire an ambient-light illuminance that is an illuminance of ambient light, a relationship acquisition unit configured to acquire a relationship between the ambient-light illuminance and a luminance of the display, a controller configured to control the relationship, and a setting unit configured to set a first set point and a second set point. The first set point is a point specified by a luminance set at an illuminance equal to or greater than a particular illuminance Is and the illuminance.

Abstract: A distributed feedback semiconductor laser of includes a semiconductor stacked body and a first electrode. The semiconductor stacked body includes a first layer, an active layer that is provided on the first layer and is configured to emit laser light by an intersubband optical transition, and a second layer that is provided on the active layer. The semiconductor stacked body has a first surface including a flat portion and a trench portion; the flat portion includes a front surface of the second layer; the trench portion reaches the first layer from the front surface; the flat portion includes a first region and a second region; the first region extends along a first straight line; the second region extends to be orthogonal to the first straight line; and the trench portion and the second region outside the first region form a diffraction grating having a prescribed pitch along the first straight line. The first electrode is provided in the first region.

Abstract: An electronic timepiece includes indicators, an operation receiving unit, a timing unit and a processor. The operation receiving unit receives an operation performed by a user. The timing unit counts a date and time at present. The processor carries out operation control of the indicators and obtains a local time setting based on a time difference between a predetermined standard time and a local time at a target position. The processor makes at least apart of the indicators display the local time in accordance with the operation received by the operation receiving unit and obtains the local time setting based on a difference between the displayed local time and the date and time counted by the timing unit.

Abstract: A quantum cascade laser of an embodiment includes a semiconductor stacked body in which a ridge waveguide is provided. The semiconductor stacked body includes an active layer including a quantum well region including a layer including Al; and the active layer emits laser light. The layer that includes Al includes first regions, and a second region interposed between the first regions; the first region includes Al oxide and reaches a prescribed depth inward from an outer edge of the active layer along a direction parallel to a surface of the active layer in a cross section orthogonal to the optical axis; and the second region does not include Al oxide.

Abstract: A surface emitting quantum cascade laser includes an active layer and a first semiconductor layer. The active layer includes a plurality of quantum well layers and is capable of emitting laser light by intersubband transition. The first surface includes an internal region and an outer peripheral region. Grating pitch of the first pits is m times grating pitch of the second pits. The outer peripheral region surrounds the internal region. A first planar shape of an opening end of the first pit is asymmetric with respect to a line passing through barycenter of the first planar shape and is parallel to at least one side of the first two-dimensional grating. A second planar shape of an opening end of the second pit is symmetric with respect to each of lines passing through barycenter of the second planar shape and is parallel to either side of the second two-dimensional grating.

Abstract: A semiconductor device includes a substrate including wiring at a surface thereof, a semiconductor element on a surface of the substrate, a first solder resist on the wiring, a bonding wire connecting the wiring and the semiconductor element, and a second solder resist. The first solder resist has an opening region at which a part of the wiring is non-covered by the first solder resist, and the bonding wire connects the wiring and the semiconductor element in the opening region. The second solder resist at least partially covers the non-covered part of the wiring in the opening region.

Abstract: A surface emitting quantum cascade laser includes an active layer and a first semiconductor layer. The active layer includes a plurality of quantum well layers and is capable of emitting laser light by intersubband transition. The first surface includes an internal region and an outer peripheral region. Grating pitch of the first pits is m times grating pitch of the second pits. The outer peripheral region surrounds the internal region. A first planar shape of an opening end of the first pit is asymmetric with respect to a line passing through barycenter of the first planar shape and is parallel to at least one side of the first two-dimensional grating. A second planar shape of an opening end of the second pit is symmetric with respect to each of lines passing through barycenter of the second planar shape and is parallel to either side of the second two-dimensional grating.

Abstract: A display device, program, and display method that even if the luminance is changed with respect to the previously set relationship between the ambient illuminance and the luminance of a display, are able to suppress a change in the previous relationship. A display device includes a display, an illuminance acquisition unit configured to acquire an ambient-light illuminance that is an illuminance of ambient light, a relationship acquisition unit configured to acquire a relationship between the ambient-light illuminance and a luminance of the display, a controller configured to control the relationship, and a setting unit configured to set a first set point and a second set point. The first set point is a point specified by a luminance set at an illuminance equal to or greater than a particular illuminance Is and the illuminance.