Abstract: The present invention provides a negative-electrode material for a lithium secondary battery which has a very low resistance, allows the lithium secondary battery to be charged and discharged (high output) at a high current and have a high capacity, and achieve a cycle life to such an extent that the lithium secondary battery can be mounted on a vehicle. The electrode material is composed of (a) at least one active substance (4) selected from among a metal oxide containing metal therein and an alloy material each of which is coated with a carbon material and has a graphene phase or an amorphous phase (8) on at least a surface thereof, (b) a graphite-based carbon material (5) having the graphene phase or the amorphous phase on at least a surface thereof; and (c) carbon material (6) other than the graphite-based carbon material and having the graphene phase or the amorphous phase on at least a surface thereof.

Abstract: According to one embodiment, a semiconductor memory device includes: a semiconductor substrate; a first semiconductor pillar above the semiconductor substrate; a first insulating layer comprising a first section and a second section, the first section being in contact with the semiconductor substrate and a bottom of the first semiconductor pillar, and the second section covering a side of the first semiconductor pillar; conductive layers and second insulating layers stacked one by one above the semiconductor substrate and covering the second section of the first insulating layer; a first plug on the first semiconductor pillar; and an interconnect on the first plug.

Abstract: A positive electrode material is used to produce a positive electrode of a lithium secondary battery, the positive electrode material being a composite lithium material that includes a first lithium compound and a second lithium compound. For instance, the first lithium compound is in the form of particles and comprises at least one compound selected from a layered lithium compound and a spinel-type lithium compound. Preferably, the second lithium compound comprises at least one compound selected from a lithium-containing phosphate compound and a lithium-containing silicate compound. An amorphous carbon material layer and/or graphene-structured carbon material layer is present on the entire surface of the first lithium compound and the second lithium compound. The second lithium compound forms a thin-film layer on part or the entirety of the carbon material layer present on the surface of the first lithium compound particles.

Abstract: [Problem] To provide an electrical connector that suppresses cross-talk. [Resolution Means] An electrical connector includes a main body 14 and a cover 16, with the main body 14 and the cover 16 demarcating a space housing a cable 3; the main body 14 includes an upper housing 20, a lower housing 22, a wiring substrate 28 arranged between the upper housing 20 and the lower housing 22, and a shield member 30 arranged interposing the upper housing 20 and the lower housing 22; and the wiring substrate 28 includes a contact 24 for electrically connecting to the cable 3, a connection terminal 26 for electrically connecting to a mating connector, and connecting conductor wiring L for electrically connecting the contact 24 and the connection terminal 26.

Abstract: According to one embodiment, a semiconductor memory device includes: a semiconductor substrate; a first semiconductor pillar above the semiconductor substrate; a first insulating layer comprising a first section and a second section, the first section being in contact with the semiconductor substrate and a bottom of the first semiconductor pillar, and the second section covering a side of the first semiconductor pillar; conductive layers and second insulating layers stacked one by one above the semiconductor substrate and covering the second section of the first insulating layer; a first plug on the first semiconductor pillar; and an interconnect on the first plug.

Abstract: According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers.

Abstract: According to one embodiment, a light emitting element includes n-type and p-type semiconductor layers and a light emitting unit. The light emitting unit is provided between the n-type semiconductor layer and the p-type semiconductor layer, the light emitting unit emits light with a peak wavelength of not less than 530 nm. The light emitting unit includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer provided between the n-side barrier layer and the p-type semiconductor layer, a first well layer contacting the n-side barrier layer between the n-side barrier layer and the first barrier layer, a first AlGaN layer provided between the first well layer and the first barrier layer and including Alx1Ga1-x1N (0.15?x1?1), and a first p-side InGaN layer provided between the first AlGaN layer and the first barrier layer and including Inya1Ga1-ya1N (0<ya1?0.1).

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting layer and a first semiconductor layer. The first semiconductor layer is arranged with the light emitting layer in a first direction. The first semiconductor layer includes a first portion and a second portion. The first portion and a second portion include a nitride semiconductor. The first portion has a first lattice polarity. The second portion has a second lattice polarity different from the first lattice polarity.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can prepare a substrate unit including a base substrate, an intermediate crystal layer, and a first mask layer. The intermediate crystal layer has a major surface having a first region, a second region, and a first intermediate region. The first mask layer is provided on the first intermediate region. The method can implement a first growth to grow a first lower layer on the first region and grow a second lower layer on the second region. The first and second lower layers include a semiconductor crystal. The method can implement a second growth to grow a second upper layer while growing a first upper layer to cover the first mask layer with the first and second upper layers. The method can implement cooling to separate the first and second upper layers.

Abstract: According to one embodiment, a semiconductor memory device includes: a semiconductor substrate; a first semiconductor pillar above the semiconductor substrate; a first insulating layer comprising a first section and a second section, the first section being in contact with the semiconductor substrate and a bottom of the first semiconductor pillar, and the second section covering a side of the first semiconductor pillar; conductive layers and second insulating layers stacked one by one above the semiconductor substrate and covering the second section of the first insulating layer; a first plug on the first semiconductor pillar; and an interconnect on the first plug.

Abstract: A semiconductor memory device includes a first portion including a semiconductor element, a second portion surrounding the semiconductor element. The second portion includes a stack of conductive layers and insulating layers, and at least one groove through the conductive layers and the insulating layers.

Abstract: An object of the invention is to provide an electrode material slurry for preparation of lithium-ion secondary batteries favorable in properties and superior in storage stability and an aqueous binder composition for lithium-ion secondary batteries that can be used for production of lithium-ion secondary batteries superior in discharge rate characteristics and cycle characteristics. Provided is a binder composition for lithium-ion secondary battery electrode, comprising polymer particles containing (a) an ethylenic unsaturated carboxylic ester compound and (b) an ethylenic unsaturated sulfonic acid compound at a (a)/(b) mass ratio of (98 to 91)/(2 to 9) in a total (a) and (b) amount of 70 mass % or more, based on the monomeric raw materials.

Abstract: There is provided a ceramic member which is a sintered body containing enstatite and boron nitride as constituents, in which boron nitride is oriented in a single direction, a probe holder formed using the ceramic member, and a manufacturing method of the ceramic member. In the ceramic member, an index of orientation degree is not less than 0.8. In so doing, it is possible to provide a ceramic member which has a free machining property, a coefficient of thermal expansion which is close to that of silicon, and high strength, and a probe holder which is formed using the ceramic member, and a manufacturing method of the ceramic member.

Abstract: According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers.

Abstract: According to one embodiment, a semiconductor light emitting device includes: a conductive layer; a first stacked body; a second stacked body; a first light-transmissive electrode; and a first interconnect electrode. The first stacked body includes a first semiconductor layer and a second semiconductor layer. The second semiconductor layer is provided between the first semiconductor layer and the conductive layer. The first light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second stacked body includes a third semiconductor layer, a fourth semiconductor layer, and a second light emitting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the conductive layer. The second light emitting layer is provided between the third semiconductor layer and the fourth semiconductor layer. The first interconnect electrode is provided between the second semiconductor layer and the third semiconductor layer.

Abstract: According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers.

Abstract: The present invention provides positive and negative electrodes, for a lithium secondary battery, allowing a battery to be quickly and fully charged in a very short period of time, for example, within one minute and allowing the battery to be used for vehicles at low temperatures. An organic electrolytic solution is permeated into an electrode group formed by winding positive and negative electrodes or by laminating the positive and negative electrodes one upon another with a separator being interposed therebetween to repeatingly occlude and release lithium ions. The positive electrode active substance and the negative electrode active substance have at least one phase selected from among a graphene phase and an amorphous phase as a surface layer thereof. An activated carbon layer is formed on a surface of the positive electrode active substance and that of the negative electrode active substance.

Abstract: A method for producing an electrode material for a lithium-ion secondary battery. The method includes the following steps: (a) mixing components of a basic ingredient or active substance of electrode material and a conductive carbon material to obtain a conductive carbon material-composited material; (b) mixing the conductive carbon material-composited material and a surface layer-forming material; an (c) burning the mixture obtained at step (b) to obtain the electrode material. Also, a lithium-ion secondary battery including an electrode which comprises the material.

Abstract: According to one embodiment, a semiconductor light emitting device includes: a conductive layer; a first stacked body; a second stacked body; a first light-transmissive electrode; and a first interconnect electrode. The first stacked body includes a first semiconductor layer and a second semiconductor layer. The second semiconductor layer is provided between the first semiconductor layer and the conductive layer. The first light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second stacked body includes a third semiconductor layer, a fourth semiconductor layer, and a second light emitting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the conductive layer. The second light emitting layer is provided between the third semiconductor layer and the fourth semiconductor layer. The first interconnect electrode is provided between the second semiconductor layer and the third semiconductor layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.