Patents by Inventor Shinji Taniguchi

Shinji Taniguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10469051
    Abstract: An acoustic wave filter includes series resonators and parallel resonators that have a piezoelectric film on an identical substrate and have a lower electrode and an upper electrode, wherein: one of the series resonators and the parallel resonators have a temperature compensation film on a face of the lower electrode or the upper electrode that is opposite to the piezoelectric film in a resonance region, the compensation film having an elastic constant of a temperature coefficient of which sign is opposite to a sign of a temperature coefficient of an elastic constant of the piezoelectric film; and the other have an added film on the same side as the temperature compensation film on the lower electrode side or the upper electrode side compared to the piezoelectric film in the resonance region in the one of the series resonators and the parallel resonators.
    Type: Grant
    Filed: June 1, 2017
    Date of Patent: November 5, 2019
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Tokihiro Nishihara, Shinji Taniguchi
  • Patent number: 10469049
    Abstract: A piezoelectric thin film resonator includes: an acoustic reflection layer including an air gap or an acoustic mirror; lower and upper electrodes facing each other in a stacking direction, at least a part of each of the lower and upper electrodes being located on or above the acoustic reflection layer; a piezoelectric film sandwiched between the lower and upper electrodes and including lower and upper piezoelectric films, at least a part of an end face of the piezoelectric film in a film thickness direction being located between outer outlines of the resonance region and the acoustic reflection layer in at least a part of a region surrounding a resonance region; and an insertion film inserted between the lower and upper piezoelectric films, located in at least a part of an outer peripheral region within the resonance region, and not located in a center region of the resonance region.
    Type: Grant
    Filed: November 21, 2016
    Date of Patent: November 5, 2019
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Jiansong Liu, Tsuyoshi Yokoyama, Hiroomi Kaneko, Shinji Taniguchi, Tokihiro Nishihara
  • Patent number: 10436862
    Abstract: In an MRI apparatus, an imaging that produces almost no sound is implemented without extending an imaging time, not only for three-dimensional imaging, but also for two-dimensional imaging. A gradient pulse in a pulse sequence provided in the MRI apparatus is adjusted by using a basic waveform having a distribution of frequencies where strength dwindles substantially as the frequency increases from zero, and the waveform is convex upward or downward varying smoothly. An application time and strength are adjusted so that almost no sound is produced. Any imaging executable by a conventional pulse sequence can be implemented without producing almost any sound, using the conventional pulse sequence with little change.
    Type: Grant
    Filed: April 7, 2015
    Date of Patent: October 8, 2019
    Assignee: Hitachi, Ltd.
    Inventors: Yo Taniguchi, Hiroyuki Takeuchi, Toru Shirai, Suguru Yokosawa, Shinji Kurokawa, Hisaaki Ochi
  • Patent number: 10431589
    Abstract: A memory cell includes a memory gate structure, a first select gate structure, and a second select gate structure. In the memory gate structure, a lower memory gate insulating film, a charge storage layer, an upper memory gate insulating film, and a metal memory gate electrode are stacked in this order. The first select gate structure includes a metal first select gate electrode along a first sidewall spacer provided on a sidewall of the memory gate structure. The second select gate structure includes a metal second select gate electrode along a second sidewall spacer provided on another sidewall of the memory gate structure. Thus, the metal memory gate electrode, the metal first select gate electrode, and the metal second select gate electrode can be formed of a same metallic material as a metal logic gate electrode, permitting the memory cell to be formed together with the metal logic gate electrode.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: October 1, 2019
    Assignee: FLOADIA CORPORATION
    Inventors: Shoji Yoshida, Fukuo Owada, Daisuke Okada, Yasuhiko Kawashima, Shinji Yoshida, Kazumasa Yanagisawa, Yasuhiro Taniguchi
  • Patent number: 10432166
    Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; lower and upper electrodes facing each other across at least a part of the piezoelectric film; a first insertion layer located between the lower and upper electrodes and located in at least a part of an outer peripheral region within a resonance region in which the lower and upper electrodes face each other across the piezoelectric film, the first insertion layer being not located in a center region of the resonance region; and a second insertion layer located between the lower and upper electrodes and located in at least a part of the outer peripheral region, the second insertion layer being not located in the center region, a position of an edge of the second insertion layer being different from a position of an edge of the first insertion film in the resonance region.
    Type: Grant
    Filed: June 7, 2017
    Date of Patent: October 1, 2019
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Jiansong Liu, Tokihiro Nishihara, Shinji Taniguchi
  • Publication number: 20190296030
    Abstract: When a memory cell (MC) is downsized by reducing the distance between a drain region (12a) and a source region (12b) on the surface of a fin (S2) with a high impurity concentration inside the fin (S2), the shape of the fin (S2) can be set such that a potential difference between a memory gate electrode (MG) and the fin (S2) is reduced to suppress the occurrence of disturbance. Accordingly, the memory cell (MC) achieves downsizing and suppression of the occurrence of disturbance.
    Type: Application
    Filed: June 7, 2019
    Publication date: September 26, 2019
    Inventors: Daisuke OKADA, Kazumasa YANAGISAWA, Fukuo OWADA, Shoji YOSHIDA, Yasuhiko KAWASHIMA, Shinji YOSHIDA, Yasuhiro TANIGUCHI, Kosuke OKUYAMA
  • Patent number: 10415830
    Abstract: A combustion burner includes a nozzle, a swirl vane having a fuel injection hole, the swirl vane being disposed in an air flow passage of an annular shape extending along an axial direction of the nozzle around the nozzle, and a partition plate having an annular shape and partitioning at least a region of the air flow passage in a radial direction of the nozzle, so as to divide at least the region into an inner flow passage facing an outer peripheral surface of the nozzle and an outer flow passage disposed on an outer side of the inner flow passage with respect to the radial direction. The fuel injection hole is disposed in the outer flow passage of the air flow passage. An end portion on an upstream side of the partition plate is disposed upstream of the fuel injection hole in the axial direction.
    Type: Grant
    Filed: August 18, 2015
    Date of Patent: September 17, 2019
    Assignee: MITSUBISHI HITACHI POWER SYSTEMS, LTD.
    Inventors: Kei Inoue, Shinji Akamatsu, Naoki Abe, Kenta Taniguchi, Keijiro Saito, Katsuyoshi Tada
  • Patent number: 10401444
    Abstract: A quantitative image (resonance frequency map) of a resonance frequency difference is obtained using a high-speed phase compensated pulse sequence of a gradient echo (GE) system. A signal function of the pulse sequence used when obtaining the resonance frequency map is generated by a numerical simulation. The high-speed phase compensated pulse sequence uses a BASG sequence, for example.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: September 3, 2019
    Assignee: Hitachi, Ltd.
    Inventors: Yo Taniguchi, Toru Shirai, Suguru Yokosawa, Shinji Kurokawa, Hisaaki Ochi
  • Patent number: 10404230
    Abstract: A piezoelectric thin film resonator includes: lower and upper electrodes located on a substrate and facing each other; a piezoelectric film sandwiched between the lower and upper electrodes and including lower and upper piezoelectric films, an outer outline of the upper piezoelectric film coinciding with or being located further out than an outer outline of a resonance region in a region surrounding the resonance region, the outer outline of the upper piezoelectric film being located further in than an outer outline of the lower piezoelectric film in the region; an insertion film interposed between the lower and upper piezoelectric films, located in an outer peripheral region within the resonance region, not located in a central region of the resonance region, and located on an upper surface of the lower piezoelectric film in the region; and a protective film located on the upper electrode in the resonance region, and located so as to cover an end face of the upper piezoelectric film and an upper surface of t
    Type: Grant
    Filed: January 26, 2017
    Date of Patent: September 3, 2019
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Hiroomi Kaneko, Hiroshi Kawakami, Shinji Taniguchi, Tokihiro Nishihara, Tsuyoshi Yokoyama
  • Patent number: 10381446
    Abstract: A memory cell and a non-volatile semiconductor memory device are disclosed. Nitride sidewall layers are respectively disposed in a first sidewall spacer and a second sidewall spacer, to separate a memory gate electrode and a first select gate electrode from each other and the memory gate electrode and a second select gate electrode from each other. Hence, a breakdown voltage is improved around the memory gate electrode as compared with a conventional case in which the first sidewall spacer and the second sidewall spacer are simply made of insulating oxide films. The nitride sidewall layers are disposed farther from a memory well than a charge storage layer. Hence, charge is unlikely to be injected into the nitride sidewall layers at charge injection from the memory well into the charge storage layer, thereby preventing an operation failure due to charge storage in a region other than the charge storage layer.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: August 13, 2019
    Assignee: FLOADIA CORPORATION
    Inventors: Yasuhiro Taniguchi, Fukuo Owada, Yasuhiko Kawashima, Shinji Yoshida, Kosuke Okuyama
  • Patent number: 10373967
    Abstract: When a memory cell (MC) is downsized by reducing the distance between a drain region (12a) and a source region (12b) on the surface of a fin (S2) with a high impurity concentration inside the fin (S2), the shape of the fin (S2) can be set such that a potential difference between a memory gate electrode (MG) and the fin (S2) is reduced to suppress the occurrence of disturbance. Accordingly, the memory cell (MC) achieves downsizing and suppression of the occurrence of disturbance.
    Type: Grant
    Filed: December 7, 2016
    Date of Patent: August 6, 2019
    Assignee: FLOADIA CORPORATION
    Inventors: Daisuke Okada, Kazumasa Yanagisawa, Fukuo Owada, Shoji Yoshida, Yasuhiko Kawashima, Shinji Yoshida, Yasuhiro Taniguchi, Kosuke Okuyama
  • Publication number: 20190153312
    Abstract: The present invention provides a photoluminescent material emitting a visible light by irradiation of light, which is zeolite A comprising silver ion, zinc ion and at least one selected from the group consisting of cesium ion and rubidium ion.
    Type: Application
    Filed: May 29, 2017
    Publication date: May 23, 2019
    Applicant: RENGO CO., LTD.
    Inventors: Kouju SUGIYAMA, Toshikazu HANATANI, Kaoru YAMAGUCHI, Shinji FUJIKI, Minoru MATSUKURA, Shogo FUJIWARA, Akio TANIGUCHI, Junichi UCHITA
  • Patent number: 10291206
    Abstract: An acoustic wave device includes: a piezoelectric thin film resonator that is connected between a first node and a second node; and a resonant circuit that is connected in parallel with the piezoelectric thin film resonator between the first node and the second node, and has a resonant frequency f0 that meets a condition of 2×fa×0.92?f0 where fa represents an antiresonant frequency of the piezoelectric thin film resonator.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: May 14, 2019
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Taisei Irieda, Yoshio Satoh, Tokihiro Nishihara, Shinji Taniguchi
  • Publication number: 20190115901
    Abstract: A ladder-type filter includes: a first piezoelectric thin film resonator including a first lower electrode, a first piezoelectric film, a first upper electrode, and an insertion film inserted between the first lower and upper electrodes, the insertion film being located in an outer peripheral region of a first resonance region; a second piezoelectric thin film resonator including a second lower electrode, a second piezoelectric film, and a second upper electrode, the second piezoelectric thin film resonator having no insertion film between the second lower and upper electrodes in a second resonance region; a series resonator, at least one of the series resonator being a first resonator that is one of the first and second piezoelectric thin film resonators, and a parallel resonator, at least one of the parallel resonator being a second resonator that is another of the first and second piezoelectric thin film resonators.
    Type: Application
    Filed: September 17, 2018
    Publication date: April 18, 2019
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Yuki TAKAHASHI, Hiroomi KANEKO, Hiroshi KAWAKAMI, Shinji TANIGUCHI
  • Patent number: 10250218
    Abstract: A piezoelectric thin film resonator includes: a substrate; a lower electrode and an upper electrode located on the substrate; a piezoelectric film, at least a part of the piezoelectric film being sandwiched between the upper electrode and the lower electrode, the piezoelectric film including a discontinuous portion in which the piezoelectric film discontinues in at least a part of a region surrounding a center region that includes a center of a resonance region where the upper electrode and the lower electrode face each other across the at least a part of the piezoelectric film.
    Type: Grant
    Filed: November 21, 2016
    Date of Patent: April 2, 2019
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Tsuyoshi Yokoyama, Takeshi Sakashita, Shinji Taniguchi, Tokihiro Nishihara
  • Publication number: 20190064923
    Abstract: An video display system having room in a generation time of a next frame to be generated on the basis of a gaze direction of the user is provided.
    Type: Application
    Filed: July 18, 2018
    Publication date: February 28, 2019
    Inventor: Shinji Taniguchi
  • Patent number: 10218335
    Abstract: A duplexer includes: a first filter connected between a common terminal and a first terminal and including first series and first parallel resonators; a second filter having a passband higher than that of the first filter, connected between the common terminal and a second terminal, and including second series and second parallel resonators; a first chip including the first series and second parallel resonators mounted thereon; a second chip including the first parallel and second series resonators mounted thereon, wherein when GA and HGB represent temperature coefficients of antiresonant frequencies of the first and second series resonators, and HGA and GB represent temperature coefficients of resonant frequencies of the first and second parallel resonators, a magnitude relationship among GA, GB, HGA, and HGB is none of a relationship in which GA (GB) differs from HGA (HGB), and GB (GA) and HGB (HGA) are located between GA (GB) and HGA (HGB).
    Type: Grant
    Filed: February 2, 2017
    Date of Patent: February 26, 2019
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Takashi Matsuda, Masumi Kida, Taisei Irieda, Tokihiro Nishihara, Shinji Taniguchi
  • Publication number: 20190007029
    Abstract: A piezoelectric thin film resonator includes: a substrate; a lower electrode located on the substrate through an air gap; a piezoelectric film located so as to have a resonance region where the lower electrode and an upper electrode face each other across the piezoelectric film and having a lower piezoelectric film and an upper piezoelectric film, in an extraction region where the lower electrode is extracted from the resonance region, a lower end of a first end face of the lower piezoelectric film being substantially aligned with or located further out than an outer periphery of the air gap, a second end face of the upper piezoelectric film being inclined, an upper end of the second end face being substantially aligned with or located further in than the outer periphery, the lower piezoelectric film having a substantially uniform film thickness between the first end face and the second end face.
    Type: Application
    Filed: June 22, 2018
    Publication date: January 3, 2019
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Mamoru ISHIDA, Shinji TANIGUCHI
  • Publication number: 20190007021
    Abstract: A piezoelectric thin film resonator includes: a substrate; lower and upper electrodes located on the substrate; a piezoelectric film that has a lower piezoelectric film mainly composed of aluminum nitride and an upper piezoelectric film mainly composed of aluminum nitride, the lower piezoelectric film and the upper piezoelectric film being in contact with each other in at least a part of a resonance region where the lower electrode and the upper electrode face each other across at least a part of the piezoelectric film, and a fluorine concentration at a boundary face with which the lower piezoelectric film and the upper piezoelectric film are in contact being 0.03 atomic % or less; and an insulating film that is located between the lower piezoelectric film and the upper piezoelectric film in a region other than the at least a part of the resonance region and contains silicon oxide.
    Type: Application
    Filed: June 14, 2018
    Publication date: January 3, 2019
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Shinji TANIGUCHI, Hiroomi KANEKO, Hiroshi KAWAKAMI, Tokihiro NISHIHARA
  • Patent number: D849495
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: May 28, 2019
    Assignee: Hitachi Koki Co., Ltd.
    Inventors: Takeshi Taniguchi, Rui Akiba, Shinji Kuragano