Patents by Inventor Shinji Taniguchi

Shinji Taniguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170170807
    Abstract: A piezoelectric thin film resonator includes: a substrate; a lower electrode and an upper electrode located on the substrate; a piezoelectric film, at least a part of the piezoelectric film being sandwiched between the upper electrode and the lower electrode, the piezoelectric film including a discontinuous portion in which the piezoelectric film discontinues in at least a part of a region surrounding a center region that includes a center of a resonance region where the upper electrode and the lower electrode face each other across the at least a part of the piezoelectric film.
    Type: Application
    Filed: November 21, 2016
    Publication date: June 15, 2017
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Tsuyoshi YOKOYAMA, Takeshi SAKASHITA, Shinji TANIGUCHI, Tokihiro NISHIHARA
  • Patent number: 9595941
    Abstract: A filter includes: piezoelectric thin film resonators, each including a substrate, a piezoelectric film located on the substrate, a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film, and an insertion film inserted in the piezoelectric film, located in at least a part of an outer peripheral region within a resonance region, and not located in a center region of the resonance region, the resonance region being a region where the lower electrode and the upper electrode face each other across the piezoelectric film, wherein at least two piezoelectric thin film resonators out of the piezoelectric thin film resonators have different widths of the insertion films within the resonance regions.
    Type: Grant
    Filed: June 9, 2015
    Date of Patent: March 14, 2017
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Tokihiro Nishihara, Tsuyoshi Yokoyama, Takeshi Sakashita, Shinji Taniguchi
  • Patent number: 9559291
    Abstract: An acoustic wave device includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across the piezoelectric film, at least one of the lower electrode and the upper electrode including a first conductive film and a second conductive film formed on the first conductive film; an insulating film sandwiched between the first conductive film and the second conductive film and having a temperature coefficient of an elastic constant opposite in sign to a temperature coefficient of an elastic constant of the piezoelectric film; and a third conductive film formed on edge surfaces of the insulating film and the second conductive film and causing electrical short circuits between the first conductive film and the second conductive film.
    Type: Grant
    Filed: October 31, 2013
    Date of Patent: January 31, 2017
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Shinji Taniguchi, Tokihiro Nishihara
  • Publication number: 20170019085
    Abstract: An acoustic wave filter includes: series resonators connected in series; and one or more parallel resonators connected in parallel, wherein at least two series resonators and a parallel resonator therebetween are divided into a first divided resonator, which includes a piezoelectric substance sandwiched between a pair of electrodes in a c-axis orientation direction, and a second divided resonator, which includes another piezoelectric substance sandwiched between another pair of electrodes so that the another pair of electrodes in the c-axis orientation direction has an electric potential opposite to that of the electrodes of the first divided resonator in the c-axis orientation direction, a first group including the first divided resonators and a second group including the second divided resonators are interconnected in parallel between two nodes, and the first divided resonators and the second divided resonators of the at least two series resonators are not electrically interconnected at the two nodes.
    Type: Application
    Filed: July 6, 2016
    Publication date: January 19, 2017
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Masumi KIDA, Tokihiro NISHIHARA, Yoshio SATO, Shinji TANIGUCHI, Taisei IRIEDA
  • Patent number: 9531342
    Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film provided on the substrate; a lower electrode and an upper electrode that are opposed to each other to put at least a part of the piezoelectric film therebetween; and an insertion film that is inserted into the piezoelectric film in a resonance region where at least the part of the piezoelectric film is put between the lower electrode and the upper electrode, at least a part of the insertion film corresponding to an outer circumference region in the resonance region being thicker than a part of the insertion film corresponding to a central region in the resonance region.
    Type: Grant
    Filed: January 16, 2015
    Date of Patent: December 27, 2016
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Shinji Taniguchi, Tokihiro Nishihara, Tsuyoshi Yokoyama, Takeshi Sakashita
  • Publication number: 20160353221
    Abstract: A piezoelectric thin film resonator includes: a lower electrode and an upper electrode facing each other across a piezoelectric film; an insertion film inserted into the piezoelectric film, located in at least a part of an outer peripheral region in a resonance region and outside the outer peripheral region, and not located in a center region of the resonance region; a protective film on the upper electrode and the piezoelectric film; and a wiring line connecting to the lower electrode and covering an outer periphery of the protective film in an extraction region of the lower electrode, wherein in the extraction region, an outer periphery of the insertion film is further out than an outer periphery of the upper electrode and further in than an outer periphery of the piezoelectric film, and the outer periphery of the protective film is further out than the outer periphery of the insertion film.
    Type: Application
    Filed: April 29, 2016
    Publication date: December 1, 2016
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Ryuichi OKAMURA, Hiroshi KAWAKAMI, Hiroomi KANEKO, Shinji TANIGUCHI, Tsuyoshi YOKOYAMA
  • Publication number: 20160142038
    Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and an insertion film inserted in the piezoelectric film, located in at least a part of an outer peripheral region within a resonance region where the lower electrode and the upper electrode face each other across the piezoelectric film, and not located in a center region of the resonance region, wherein a difference between a total film thickness of the piezoelectric film and the insertion film in a first region, in which the insertion film is inserted, within the resonance region and a film thickness of the piezoelectric film in a second region, in which the insertion film is not inserted, is less than a film thickness of the insertion film.
    Type: Application
    Filed: August 12, 2015
    Publication date: May 19, 2016
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Shinji TANIGUCHI, Tokihiro NISHIHARA, Tsuyoshi YOKOYAMA, Takeshi SAKASHITA
  • Publication number: 20160028371
    Abstract: A filter includes: piezoelectric thin film resonators, each including a substrate, a piezoelectric film located on the substrate, a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film, and an insertion film inserted in the piezoelectric film, located in at least a part of an outer peripheral region within a resonance region, and not located in a center region of the resonance region, the resonance region being a region where the lower electrode and the upper electrode face each other across the piezoelectric film, wherein at least two piezoelectric thin film resonators out of the piezoelectric thin film resonators have different widths of the insertion films within the resonance regions.
    Type: Application
    Filed: June 9, 2015
    Publication date: January 28, 2016
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Tokihiro NISHIHARA, Tsuyoshi YOKOYAMA, Takeshi SAKASHITA, Shinji TANIGUCHI
  • Patent number: 9240769
    Abstract: A piezoelectric thin film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. At least a portion of the upper electrode and that of the lower electrode oppose each other through the piezoelectric film, and at least a portion of the periphery of the upper electrode is reversely tapered.
    Type: Grant
    Filed: June 20, 2012
    Date of Patent: January 19, 2016
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Takeshi Sakashita, Motoaki Hara, Masafumi Iwaki, Tsuyoshi Yokoyama, Shinji Taniguchi, Tokihiro Nishihara, Masanori Ueda
  • Patent number: 9240768
    Abstract: A duplexer includes a transmission filter and a reception filter having different passbands, wherein: first resonators that are series resonators or parallel resonators included in the transmission and reception filters so as to form a skirt characteristic at a guard band side are a temperature compensated type piezoelectric thin film resonator or a surface acoustic wave resonator using Love waves, and second resonators that form a skirt characteristic at an opposite side to the guard band are one of a temperature non-compensated type piezoelectric thin film resonator, a surface acoustic wave resonator using a lithium tantalate substrate or a substrate made by bonding a lithium tantalate substrate on a sapphire substrate, and a surface acoustic wave resonator using Love waves.
    Type: Grant
    Filed: September 11, 2012
    Date of Patent: January 19, 2016
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Tokihiro Nishihara, Shinji Taniguchi
  • Patent number: 9184725
    Abstract: An acoustic wave device includes: a substrate; a lower electrode formed on the substrate; at least two piezoelectric films formed on the lower electrode; an insulating film located between the at least two piezoelectric films; and an upper electrode formed on the at least two piezoelectric films, wherein an outer periphery of an uppermost piezoelectric film out of the at least two piezoelectric films in a region in which the lower electrode and the upper electrode face each other is positioned further in than an outer periphery of the upper electrode.
    Type: Grant
    Filed: July 24, 2012
    Date of Patent: November 10, 2015
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Shinji Taniguchi, Tokihiro Nishihara, Masanori Ueda, Tsuyoshi Yokoyama, Takeshi Sakashita
  • Patent number: 9166557
    Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located to sandwich the piezoelectric film; a load film formed from patterns in a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, wherein the patterns are formed so as to surround a center of the resonance region and intersect with a pathway extending from the center to an outer periphery of the resonance region.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: October 20, 2015
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Kenya Hashimoto, Jiansong Liu, Masanori Ueda, Shinji Taniguchi, Tokihiro Nishihara
  • Publication number: 20150207490
    Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film provided on the substrate; a lower electrode and an upper electrode that are opposed to each other to put at least a part of the piezoelectric film therebetween; and an insertion film that is inserted into the piezoelectric film in a resonance region where at least the part of the piezoelectric film is put between the lower electrode and the upper electrode, at least a part of the insertion film corresponding to an outer circumference region in the resonance region being thicker than a part of the insertion film corresponding to a central region in the resonance region.
    Type: Application
    Filed: January 16, 2015
    Publication date: July 23, 2015
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Shinji TANIGUCHI, Tokihiro NISHIHARA, Tsuyoshi YOKOYAMA, Takeshi SAKASHITA
  • Patent number: 9071225
    Abstract: An electronic circuit includes a plurality of duplexers that are coupled to an antenna terminal and have a pass band different from each other and a plurality of acoustic wave filters that are respectively coupled between the antenna terminal and the plurality of the duplexers, wherein filter characteristics of a first acoustic wave filter of the plurality of the acoustic wave filters are set so as to allow passage of a signal in both a pass band for transmitting and a pass band for receiving of a first duplexer of the plurality of the duplexers that is coupled to the first acoustic wave filter and suppress passage of a signal in both a pass band for transmitting and a pass band for receiving of a second duplexer of the plurality of the duplexers that is different from the first duplexer.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: June 30, 2015
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Tokihiro Nishihara, Shinji Taniguchi, Tsuyoshi Yokoyama, Masanori Ueda
  • Patent number: 9071224
    Abstract: A filter includes: a plurality of piezoelectric thin film resonators, each having a multilayered film including a lower electrode located on a substrate, a piezoelectric film located on the lower electrode, and an upper electrode located on the piezoelectric film so as to face the lower electrode, wherein at least two piezoelectric thin film resonators have thick film portions, in each of which the multilayered film is thicker in at least a part of an outer peripheral portion than in an inner portion of a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, and lengths of the thick film portions from edges of the resonance regions are different from each other in the at least two piezoelectric thin film resonators.
    Type: Grant
    Filed: November 1, 2012
    Date of Patent: June 30, 2015
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Tokihiro Nishihara, Shinji Taniguchi, Toshio Nishizawa
  • Publication number: 20150137908
    Abstract: An acoustic wave filter includes series resonators and parallel resonators that have a piezoelectric film on an identical substrate and have a lower electrode and an upper electrode, wherein: one of the series resonators and the parallel resonators have a temperature compensation film on a face of the lower electrode or the upper electrode that is opposite to the piezoelectric film in a resonance region, the compensation film having an elastic constant of a temperature coefficient of which sign is opposite to a sign of a temperature coefficient of an elastic constant of the piezoelectric film; and the other have an added film on the same side as the temperature compensation film on the lower electrode side or the upper electrode side compared to the piezoelectric film in the resonance region in the one of the series resonators and the parallel resonators.
    Type: Application
    Filed: October 30, 2014
    Publication date: May 21, 2015
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Tokihiro NISHIHARA, Shinji TANIGUCHI
  • Patent number: 9035536
    Abstract: A piezoelectric thin-film resonator includes: a lower electrode provided on a substrate; a piezoelectric film that is provided on the lower electrode and includes at least two layers; an upper electrode that is provided on the piezoelectric film and has a region sandwiching the piezoelectric film with the lower electrode and facing the lower electrode; and an insulating film that is provided in a region in which the lower electrode and the upper electrode face each other and between each of the at least two layers, wherein an upper face of the insulating film is flatter than a lower face of the insulating film.
    Type: Grant
    Filed: July 31, 2012
    Date of Patent: May 19, 2015
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Masanori Ueda, Shinji Taniguchi, Tokihiro Nishihara
  • Publication number: 20150130561
    Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film provided on the substrate; a lower electrode and an upper electrode that sandwich at least a part of the piezoelectric film and face with each other; and an inserted film that is inserted in the piezoelectric film, is provided on an outer circumference region in a resonance region in which the lower electrode and the upper electrode sandwich the piezoelectric film and face with each other, is not provided in a center region of the resonance region, and has a cutout in the resonance region.
    Type: Application
    Filed: October 29, 2014
    Publication date: May 14, 2015
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Shinji TANIGUCHI, Tokihiro NISHIHARA, Tsuyoshi YOKOYAMA, Takeshi SAKASHITA
  • Patent number: 9013250
    Abstract: An acoustic wave device including: a substrate; a piezoelectric film formed on the substrate; an lower electrode provided on a first surface of the piezoelectric film; an upper electrode provided on a second surface of the piezoelectric film opposite to the first surface; and a mass loading film having a first pattern and a second pattern in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film, the first pattern having portions and the second pattern having portions interlinking the portions of the first pattern.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: April 21, 2015
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Shinji Taniguchi, Tokihiro Nishihara, Tsuyoshi Yokoyama, Takeshi Sakashita
  • Patent number: 8941286
    Abstract: An acoustic wave device includes: a piezoelectric thin film resonator including: a substrate; a lower electrode formed on the substrate; at least two piezoelectric films formed on the lower electrode; an insulating film sandwiched by the at least two piezoelectric films; and an upper electrode formed on the at least two piezoelectric films, wherein an area of the insulating film within a resonance region, in which the lower electrode and the upper electrode face each other across the at least two piezoelectric films, is different from an area of the resonance region.
    Type: Grant
    Filed: January 4, 2013
    Date of Patent: January 27, 2015
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Shinji Taniguchi, Tokihiro Nishihara