Patents by Inventor Shinji Taniguchi

Shinji Taniguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120299444
    Abstract: A piezoelectric thin-film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode and an upper electrode that is located opposite the lower electrode across at least a part of the piezoelectric film. A mass load film is provided on the upper electrode. The mass load film includes a plurality of concave or convex patterns in at least a region that faces the lower electrode. The plurality of concave or convex patterns are densely arranged in a central portion of the region and are sparsely arranged in a peripheral portion of the region.
    Type: Application
    Filed: August 9, 2012
    Publication date: November 29, 2012
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Tsuyoshi YOKOYAMA, Shinji TANIGUCHI, Tokihiro NISHIHARA, Masanori UEDA
  • Publication number: 20120256706
    Abstract: A piezoelectric thin film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. At least a portion of the upper electrode and that of the lower electrode oppose each other through the piezoelectric film, and at least a portion of the periphery of the upper electrode is reversely tapered.
    Type: Application
    Filed: June 20, 2012
    Publication date: October 11, 2012
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: TAKESHI SAKASHITA, MOTOAKI HARA, MASAFUMI IWAKI, TSUYOSHI YOKOYAMA, SHINJI TANIGUCHI, TOKIHIRO NISHIHARA, MASANORI UEDA
  • Patent number: 8240015
    Abstract: A method of producing a piezoelectric thin film resonator is provided. A sacrificial layer is formed on a part of the piezoelectric film. The sacrificial layer is patterned, and thereafter an upper electrode is formed on the piezoelectric layer. The method further includes removing the sacrificial layer formed on the piezoelectric layer; and patterning the piezoelectric film. In the step of removing the sacrificial layer, the sacrificial layer is removed such that at least a portion of the periphery of the upper electrode has a reversely tapered shape that reflects the tapered portion of the sacrificial layer, and in the step of patterning the piezoelectric film, the piezoelectric film is removed such that a lower end of the reversely tapered periphery of the upper electrode is placed so as to coincide with or to be in the vicinity of an end portion of the patterned piezoelectric film.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: August 14, 2012
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Takeshi Sakashita, Motoaki Hara, Masafumi Iwaki, Tsuyoshi Yokoyama, Shinji Taniguchi, Tokihiro Nishihara, Masanori Ueda
  • Publication number: 20120200199
    Abstract: A piezoelectric thin-film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the substrate and the lower electrode, an upper electrode provided on the piezoelectric film, and an additional pattern, a cavity being formed between the lower electrode and the substrate in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film, the additional pattern being provided in a position that is on the lower electrode and includes an interface between the resonance portion and a non-resonance portion.
    Type: Application
    Filed: April 17, 2012
    Publication date: August 9, 2012
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Shinji TANIGUCHI, Tokihiro NISHIHARA, Masafumi IWAKI, Masanori UEDA, Tsuyoshi YOKOYAMA, Takeshi SAKASHITA, Motoaki HARA
  • Publication number: 20120200195
    Abstract: An acoustic wave device includes a main resonator and a sub resonator each having a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on an upper side of the piezoelectric film. The sub resonator has a mass addition film on the upper electrode in a resonance area in which the upper electrode and the lower electrode face each other. At least one of the main resonator and the sub resonator is provided with a frequency control film on an upper side of the resonance area, and the frequency control film has a weight per unit area smaller than a weight of the mass addition film per unit area.
    Type: Application
    Filed: March 27, 2012
    Publication date: August 9, 2012
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Tsuyoshi YOKOYAMA, Shinji TANIGUCHI, Tokihiro NISHIHARA, Masanori UEDA
  • Publication number: 20120200373
    Abstract: An acoustic wave device including: a substrate; a piezoelectric film formed on the substrate; an lower electrode provided on a first surface of the piezoelectric film; an upper electrode provided on a second surface of the piezoelectric film opposite to the first surface; and a mass loading film having a first pattern and a second pattern in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film, the first pattern having portions and the second pattern having portions interlinking the portions of the first pattern.
    Type: Application
    Filed: January 31, 2012
    Publication date: August 9, 2012
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Shinji TANIGUCHI, Tokihiro NISHIHARA, Tsuyoshi YOKOYAMA, Takeshi SAKASHITA
  • Patent number: 8228138
    Abstract: A filter element includes a plurality of multilayer filters that are connected in cascade, each of the plurality of multilayer filters including a plurality of piezoelectric thin-film resonators stacked vertically, each of the piezoelectric thin-film resonators including a piezoelectric film and a pair of first electrodes between which the piezoelectric film is interposed, and a capacitor connected between an input terminal of one of the plurality of multilayer filters of a preceding stage and an input terminal of another one of the plurality of multilayer filters of a following stage, exciting directions of piezoelectric thin-film resonators to which the input terminals of the multilayer filters of the preceding and following stages are connected being opposite to each other.
    Type: Grant
    Filed: July 7, 2011
    Date of Patent: July 24, 2012
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Motoaki Hara, Shinji Taniguchi, Takeshi Sakashita, Tsuyoshi Yokoyama, Masafumi Iwaki, Tokihiro Nishihara, Masanori Ueda
  • Publication number: 20120182092
    Abstract: An acoustic wave device includes a main resonator and a sub resonator each having a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on an upper side of the piezoelectric film. A frequency control film is provided on an upper side of a resonance area in which the upper electrode and the lower electrode face each other in at least one of the main resonator and the sub resonator. The frequency control film has multiple convex patterns, and the convex patterns are arranged with a common pitch for spurious adjustment and with different areas in the main resonator and the sub resonator.
    Type: Application
    Filed: March 27, 2012
    Publication date: July 19, 2012
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Tsuyoshi YOKOYAMA, Shinji TANIGUCHI, Tokihiro NISHIHARA, Masanori UEDA
  • Patent number: 8222970
    Abstract: A resonant device includes first and second piezoelectric thin film resonators. The first piezoelectric thin film resonator includes a substrate, a first lower electrode formed on the substrate, a first piezoelectric film formed over the first lower electrode, and a first upper electrode formed on the piezoelectric film and opposed to the first lower electrode. The second piezoelectric thin film resonator includes a second lower electrode formed above the first upper electrode, a second piezoelectric film formed over the second lower electrode, and a second upper electrode formed on the piezoelectric film and opposed to the second lower electrode. The first membrane region in which the first lower electrode opposes to the first upper electrode through the first piezoelectric film and a second membrane region in which the second lower electrode opposes to the second upper electrode through the second piezoelectric film are laminated through a second cavity.
    Type: Grant
    Filed: July 15, 2009
    Date of Patent: July 17, 2012
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Kazunori Inoue, Tokihiro Nishihara, Takashi Matsuda, Shinji Taniguchi
  • Publication number: 20120146744
    Abstract: An acoustic wave device includes piezoelectric thin-film resonators, each of which includes: a substrate; a piezoelectric thin-film on the substrate; an lower electrode provided on a first surface of the piezoelectric film; an upper electrode provided on a second surface of the piezoelectric film opposite to the first surface; and a first addition film that is provided in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film and is located between the piezoelectric thin-film and the upper electrode, the first addition film having a shape different from that of the resonance portion.
    Type: Application
    Filed: February 16, 2012
    Publication date: June 14, 2012
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Tokihiro NISHIHARA, Shinji TANIGUCHI, Tsuyoshi YOKOYAMA, Masanori UEDA
  • Publication number: 20120104900
    Abstract: An acoustic wave device includes: a first piezoelectric thin film resonator including a first lower electrode, a first upper electrode and a first piezoelectric film sandwiched between the first lower and upper electrodes; a decoupler film provided on the first upper electrode; and a second piezoelectric thin film resonator provided on the decoupler film and including a second lower electrode, a second upper electrode and a second piezoelectric film sandwiched between the second lower and upper electrodes, wherein the first piezoelectric film and the second piezoelectric film comprise aluminum nitride and include an element increasing a piezoelectric constant of the aluminum nitride.
    Type: Application
    Filed: September 22, 2011
    Publication date: May 3, 2012
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Tokihiro NISHIHARA, Shinji TANIGUCHI, Tsuyoshi YOKOYAMA, Takeshi SAKASHITA
  • Patent number: 8164398
    Abstract: A resonator includes a substrate, a lower electrode, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. The lower electrode includes a first film provided on the substrate, and a second film that is provided on the first film and has a specific gravity greater than that of the first film. The piezoelectric film is provided on the second film. The upper electrode includes a third film provided on the piezoelectric film, and a fourth film provided on the third film, the third film having a specific gravity greater than that of the fourth film. The third film is thicker than the second film.
    Type: Grant
    Filed: August 25, 2009
    Date of Patent: April 24, 2012
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Shinji Taniguchi, Tokihiro Nishihara, Masufumi Iwaki, Masanori Ueda, Go Endo, Tsuyoshi Yokoyama, Takeshi Sakashita, Motoaki Hara
  • Patent number: 8125298
    Abstract: An acoustic wave filter having excellent steepness is provided without adding any exterior components or any new manufacturing steps. A plurality of filters (10-1) each having a first resonator (2a-1) placed in a serial arm and having a resonance frequency frs and an anti-resonance frequency fas, and a second resonator (4a-1) placed in a parallel arm and having a resonance frequency frp and an anti-resonance frequency fap are provided on a same substrate, where the resonance frequency frs of the first resonator is higher than the resonance frequency frp of the second resonator; the anti-resonance frequency fas of the first resonator is higher than the anti-resonance frequency fap of the second resonator; and the filters (10-1) are connected in multiple stages. At least one of the filters (10-1) connected in multiple stages has a third resonator (6-1) having a resonance frequency frp and an anti-resonance frequency fap.
    Type: Grant
    Filed: January 8, 2010
    Date of Patent: February 28, 2012
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Motoaki Hara, Tokihiro Nishihara, Shinji Taniguchi, Takeshi Sakashita, Tsuyoshi Yokoyama, Masafumi Iwaki, Masanori Ueda
  • Patent number: 8125297
    Abstract: A filter includes: a first filter unit includes: a series resonators connected in series to each other between a first input terminal and a first output terminal; a parallel resonators each having one end connected to one terminal of each of the series resonators; and a common inductance having one end connected to the other ends of the parallel resonators and the other end connected to a ground terminal, and a second filter unit includes: a series resonators connected in series to each other between a second input terminal and a second output terminal; a parallel resonators each having one end connected to one terminal of each of the series resonators; and a common inductance having one end connected to the other ends of the parallel resonators and the other end connected to the ground terminal.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: February 28, 2012
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Masafumi Iwaki, Tokihiro Nishihara, Shinji Taniguchi, Takeshi Sakashita, Tsuyoshi Yokoyama, Motoaki Hara, Masanori Ueda
  • Patent number: 8125123
    Abstract: A piezoelectric thin film resonant element includes a resonant portion having a laminate structure made up of a lower electrode, an upper electrode and a piezoelectric film arranged between these two electrodes. The lower electrode has an ellipsoidal plan-view shape and an outer circumference formed with an inclined portion inclined at an angle (about 30° for example) lying within a range of 25° through 55°. The upper electrode has an ellipsoidal plan-view shape. An additional film is provided on the upper electrode at a portion corresponding to the inclined portion of the lower electrode.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: February 28, 2012
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Tokihiro Nishihara, Motoaki Hara, Shinji Taniguchi, Masafumi Iwaki, Tsuyoshi Yokoyama, Masanori Ueda
  • Patent number: 8093962
    Abstract: A filter has a plurality of piezoelectric thin film resonators formed by sandwiching a piezoelectric film with a lower electrode disposed on a substrate and an upper electrode. Each of the piezoelectric thin film resonators has an electrode region formed with the upper electrode and the lower electrode overlapping each other, whose outline includes a curve. Among the plural piezoelectric thin film resonators, the piezoelectric thin film resonators in the opposing electrode regions of the adjacent piezoelectric thin film resonators are shaped to have outlines complementary to each other. With the filter, influences caused by transverse mode undesired wave of the piezoelectric thin film resonators can be suppressed. Therefore, miniaturization can be achieved without sacrificing the mechanical strength of electrodes having hollow structures.
    Type: Grant
    Filed: June 30, 2009
    Date of Patent: January 10, 2012
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Shinji Taniguchi, Tokihiro Nishihara, Tsuyoshi Yokoyama, Masafumi Iwaki, Motoaki Hara, Takeshi Sakashita, Masanori Ueda
  • Patent number: 8085115
    Abstract: A piezoelectric thin film resonator includes a substrate, a lower electrode formed on the substrate, a piezoelectric film formed on the substrate and the lower electrode, and an upper electrode formed on the piezoelectric film and opposing the lower electrode, an upper electrode formed on the piezoelectric film. The upper electrode has a main portion and an extended portion connected to the main portion, the main portion opposing the lower electrode and an opening disposed between the substrate and the lower electrode, the extended portion having a portion which opposes the opening and the substrate.
    Type: Grant
    Filed: March 4, 2009
    Date of Patent: December 27, 2011
    Assignee: Taiyo Yuden Co., Ltd
    Inventors: Shinji Taniguchi, Tokihiro Nishihara, Tsuyoshi Yokoyama, Masafumi Iwaki, Motoaki Hara, Masanori Ueda
  • Patent number: 8084919
    Abstract: A piezoelectric thin film resonator includes a substrate, a lower electrode formed on the substrate, a piezoelectric film formed on the lower electrode, and an upper electrode formed on the piezoelectric film, the lower electrode and the upper electrode opposing each other through the piezoelectric film to form an opposing region, the opposing region including a space at a boundary of the opposing region. The space extends from an innerside to an outer side of the opposing region and is formed in or on the piezoelectric film.
    Type: Grant
    Filed: August 4, 2009
    Date of Patent: December 27, 2011
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Tokihiro Nishihara, Motoaki Hara, Shinji Taniguchi, Takeshi Sakashita, Tsuyoshi Yokoyama, Masafumi Iwaki, Masanori Ueda
  • Publication number: 20110267155
    Abstract: A filter element includes a plurality of multilayer filters that are connected in cascade, each of the plurality of multilayer filters including a plurality of piezoelectric thin-film resonators stacked vertically, each of the piezoelectric thin-film resonators including a piezoelectric film and a pair of first electrodes between which the piezoelectric film is interposed, and a capacitor connected between an input terminal of one of the plurality of multilayer filters of a preceding stage and an input terminal of another one of the plurality of multilayer filters of a following stage, exciting directions of piezoelectric thin-film resonators to which the input terminals of the multilayer filters of the preceding and following stages are connected being opposite to each other.
    Type: Application
    Filed: July 7, 2011
    Publication date: November 3, 2011
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Motoaki HARA, Shinji TANIGUCHI, Takeshi SAKASHITA, Tsuyoshi YOKOYAMA, Masafumi IWAKI, Tokihiro NISHIHARA, Masanori UEDA
  • Publication number: 20110241800
    Abstract: A method of manufacturing an elastic wave device is provided with a lamination step of forming, on a substrate (1), a plurality of elastic wave devices, each of which includes a lower electrode (2), a piezoelectric film (3), and an upper electrode (4); a measuring step for measuring the operation frequency distribution of the elastic wave devices on the substrate (1); and an adjusting step for forming an adjusting region, in which the thickness of the elastic wave device is different from the thicknesses of other portions in a resonance portion of each elastic wave device, corresponding with the distribution of the operation frequencies. The adjusting region is formed so that the size of the area of the adjusting region of the resonator portion of each elastic wave device is different in accordance with the operation frequency distribution that is measured. Thus, the frequency characteristics of the elastic wave devices are easily adjusted by a small number of steps.
    Type: Application
    Filed: November 28, 2008
    Publication date: October 6, 2011
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Tsuyoshi Yokoyama, Shinji Taniguchi, Masafumi Iwaki, Motoaki Hara, Takeshi Sakashita, Tokihiro Nishihara, Masanori Ueda