Abstract: Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.

Abstract: Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing an organic solvent, wherein the developer contains an alcohol compound (X) at a content of 0 to less than 500 ppm based on the total mass of the developer.

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa??1.5 when exposed to actinic rays or radiation.

Abstract: Provide is a curable composition for imprints, capable of effectively suppressing chipping of the cured pattern. A curable composition for imprints comprising (A) curable compound and (B) photo-polymerization initiator, having a moisture content ratio, relative to the total weight of all components excluding solvent, of less than 0.8% by weight.

Abstract: Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and ?SP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent.

Abstract: Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing an organic solvent, wherein the developer contains an alcohol compound (X) at a content of 0 to less than 500 ppm based on the total mass of the developer.

Abstract: Provided is the pattern formability and line edge roughness of the resultant substrate. An underlay film composition for imprints comprising a compound (A) and a solvent (B), the compound (A) having at least either one of a group (Ka) capable of covalently bonding and/or interacting with a substrate, and, a group (Kb) capable of covalently bonding and/or interacting with a curable composition for imprints, an Ohnishi parameter (Z) calculated from (equation 1) of 3.8 or larger, and a molecular weight of 400 or larger: the Ohnishi parameter=(total number of atoms)/(number of carbon atoms?number of oxygen atoms).

Abstract: Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing an organic solvent, wherein the developer contains an alcohol compound (X) at a content of 0 to less than 500 ppm based on the total mass of the developer.

Abstract: Provided is a pattern forming method comprising (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (D) a solvent, and (G) a compound having at least either one of a fluorine atom and a silicon atom and having basicity or being capable of increasing the basicity by the action of an acid.

Abstract: Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing an organic solvent, wherein the developer contains an alcohol compound (X) at a content of 0 to less than 500 ppm based on the total mass of the developer.

Abstract: A pattern forming method, including: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using a developer containing an organic solvent, wherein the chemical amplification resist composition contains: (A) a resin capable of decreasing a solubility of the resin (A) in the developer containing an organic solvent by an action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a basic, compound or ammonium salt compound whose basicity decreases upon irradiation with an actinic ray or radiation, and a resist composition used for the pattern forming method and a resist film formed from the resist composition are provided.

Abstract: Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing an organic solvent, wherein the developer contains an alcohol compound (X) at a content of 0 to less than 500 ppm based on the total mass of the developer.

Abstract: A pattern forming method includes: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains: (A) a resin substantially insoluble in alkali; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a crosslinking agent; and (D) a solvent, a negative chemical amplification resist composition used in the method, and a resist film formed from the negative chemical amplification resist composition.

Abstract: Provide a curable composition for imprint, which is improved in the surface roughness of the cured film. A curable composition for imprint comprising a polymerizable compound (A), a polymerization initiator (B), and a non-polymerizable compound (C), the non-polymerizable compound (C) comprising at least one species of surfactant (C1) which contains 20% by mass or more of fluorine atom, and, at least one species of polymer (C2) which contains 3% by mass or more and less than 20% by mass of fluorine atom and/or 5% by mass or more and less than 40% by mass of silicon atom, and has a weight-average molecular weight (Mw) of 1,000 to 100,000.

Abstract: According to one embodiment, a method of forming a pattern includes the step of applying an actinic-ray- or radiation-sensitive resin composition on a substrate so as to form a film, the step of selectively exposing the film through a mask and the step of developing the exposed film with the use of a developer containing an organic solvent, wherein the actinic-ray- or radiation-sensitive resin composition contains a resin (A) whose polarity is increased by the action of an acid so that the solubility of the resin in the developer containing an organic solvent is decreased, a photoacid generator (B) that when exposed to actinic rays or radiation, generates an acid containing a fluorine atom and a solvent (C), and wherein the photoacid generator (B) is contained in the composition in a ratio of 8 to 20 mass % based on the total solids of the composition.

Abstract: Provided is a method of producing a curable composition for imprints including (A) a polymerizable monomer, (B) a polymerization initiator, and (C) a solvent which is capable of effectively suppressing lifting or separation of patterns, excellent in coatability, and excellent in time-dependent stability. The method of producing a curable composition for imprints comprises preparing one species of liquid (D) which contains at least either one of the polymerizable monomer (A) and the polymerization initiator (B), passing the liquid (D) through a filter, and then adding the solvent (C).

Abstract: Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, (c) developing the exposed film with a developer containing an organic solvent, and (d) rinsing the developed film with a rinse liquid containing an organic solvent, which rinse liquid has a specific gravity larger than that of the developer.

Abstract: Provide a curable composition for imprint, which is improved in the surface roughness of the cured film. A curable composition for imprint comprising a polymerizable compound (A), a polymerization initiator (B), and a non-polymerizable compound (C), the non-polymerizable compound (C) comprising at least one species of surfactant (C1) which contains 20% by mass or more of fluorine atom, and, at least one species of polymer (C2) which contains 3% by mass or more and less than 20% by mass of fluorine atom and/or 5% by mass or more and less than 40% by mass of silicon atom, and has a weight-average molecular weight (Mw) of 1,000 to 100,000.

Abstract: A method for producing a curable composition for imprints includes the step of passing a curable composition containing a polymerizable monomer (A) and a polymerization initiator (B) through a filter having an effective filter area of 200 cm2 or more at least one time. The method suppresses pattern-peeling when peeling the mold employed in forming a pattern using the curable composition for imprints, and thus provides excellent patternability.

Abstract: A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains (A) a resin containing a repeating unit having two or more hydroxyl groups, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent and (D) a solvent; a pattern formed by the pattern forming method; a chemical amplification resist composition used in the pattern forming method; and a resist film formed using the chemical amplification resist composition.