Abstract: In a moving-object power supply system, a control unit selects, as a power transmission segment, one of segments included in at least one power transmission section. The control unit supplies, through a power supply circuit, power to the power transmission segment to thereby generate a magnetic field through a power transmission coil of the power transmission segment. The control unit determines, based on an ascertained first electrical characteristic of the power transmission segment and an ascertained second electrical characteristic of at least one power non-transmission segment, whether there is a malfunction in each of the power transmission segment and the at least one power non-transmission segment.

Abstract: An image acquisition unit 40 acquires a subject image in which a subject is positioned in front of a background with a single color. An eye gaze information determination unit 32 determines an eye direction and a viewpoint position of a user wearing an HMD and provides the eye direction and the viewpoint position for a display control unit 50. The display control unit 50 performs chroma-key composition such that the subject included in the subject image may become a foreground image with respect to a background image and thereby generates a display image according to the viewpoint position of the user. The display control unit 50 determines an orientation of the subject such that the subject may be made to face the viewpoint position of the user, in a case where the viewpoint position has been changed.

Abstract: A partial image acquiring unit 50 of an image data output device 10 acquires plural partial images photographed with different angles of view. An output image generating unit 52 connects partial images to generate data of one wide-angle image. A map generating unit 56 generates map data relating to a joint of partial images, and a data output unit 54 outputs these pieces of data. A content creation device 18 refers to the map data and enlarges a region including the joint, and detects and corrects image distortion and a discontinuous part. A content reproduction device 20 refers to the map data and connects or combines the remaining partial images as appropriate to carry out output to the display device 16b.

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

Abstract: An object of the present invention is to provide a novel IL-2 variant which has improved selectivity for IL-2R??? and selectively activates Tregs. The present invention relates to an IL-2 variant, a method for producing the IL-2 variant, a composition and a therapeutic agent for an immune disease, comprising the IL-2 variant, a method for increasing selectivity of IL-2 for IL-2R???, a method for improving an affinity of IL-2 for an IL-2R? subunit, a method of reducing an affinity of IL-2 for at least one of an IL-2R? subunit and an IL-2R? subunit, and a method for selectively activating regulatory T cells.

Abstract: An image acquisition unit 40 acquires a subject image in which a subject is positioned in front of a background with a single color. An eye gaze information determination unit 32 determines an eye direction and a viewpoint position of a user wearing an HMD and provides the eye direction and the viewpoint position for a display control unit 50. The display control unit 50 performs chroma-key composition such that the subject included in the subject image may become a foreground image with respect to a background image and thereby generates a display image according to the viewpoint position of the user. The display control unit 50 determines an orientation of the subject such that the subject may be made to face the viewpoint position of the user, in a case where the viewpoint position has been changed.

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided.

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided.

Abstract: There is provided an apparatus including an image sensor of a back-illuminated type using a complementary metal oxide semiconductor (CMOS), including a light receiving unit, formed in a semiconductor substrate, which receives incident light, an anti-reflection film formed on a back-surface side of the semiconductor substrate in which the light receiving unit is formed, and a silicon oxide film, formed on a back-surface side of the anti-reflection film, which has a refractive index lower than a silicon nitride film and has a higher density in a back-surface side than in a front-surface side thereof.

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device (1) includes a silicon substrate (22), and at least a first photodiode (33) formed in the silicon substrate. The device also includes an epitaxial layer (21) with a first surface adjacent a surface of the silicon substrate, and a transfer transistor (31) with a gate electrode (41) that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

Abstract: Disclosed herein is a method for manufacturing a semiconductor device, the method including the step of forming a gate electrode that contains a metal over a semiconductor substrate with intermediary of a gate insulating film, the step including the sub-steps of, forming a first gate electrode layer that defines a work function of the gate electrode on the gate insulating film, forming a second gate electrode layer that has a barrier property for underlayers on the first gate electrode layer, and forming a third gate electrode layer of which resistance is lower than a resistance of the first gate electrode layer on the second gate electrode layer by chemical vapor deposition.

Abstract: There is provided an apparatus including an image sensor of a back-illuminated type using a complementary metal oxide semiconductor (CMOS), including a light receiving unit, formed in a semiconductor substrate, which receives incident light, an anti-reflection film formed on a back-surface side of the semiconductor substrate in which the light receiving unit is formed, and a silicon oxide film, formed on a back-surface side of the anti-reflection film, which has a refractive index lower than a silicon nitride film and has a higher density in a back-surface side than in a front-surface side thereof.

Abstract: A music production apparatus includes a melody data storage operative to store music data for a plurality of melody elements forming music, a condition storage operative to store a condition for combining melody elements and a condition related to an attribute applicable when playing the melody element, an element selector operative to determine, at a predetermined point of time, whether a melody element should be allocated to a track where no melody elements are allocated, and to select, when it is determined that a melody element should be allocated to the track, a melody element that should be allocated to the track by referring to the condition for combining melody elements stored in the condition storage, an attribute determination unit operative to determine an attribute applicable when playing the selected melody element, and a sound production unit operative to read music data for the selected melody element from the melody data storage, to apply the attribute determined by the attribute determination

Abstract: Disclosed is a solid-state image pickup apparatus including a semiconductor substrate, a photoelectric converter, a transfer gate, an insulating layer, a first silicon layer, and a pixel transistor portion. The photoelectric converter converts light energy of incident light into electrical energy and obtains a signal charge. The photoelectric converter is formed on a surface side in the semiconductor substrate. The transfer gate reads the signal charge from the photoelectric converter, and the transfer gate is formed on the semiconductor substrate adjacent to the photoelectric converter. The insulating layer is formed on the photoelectric converter in the semiconductor substrate. The first silicon layer is formed on the insulating layer. The pixel transistor portion amplifies and outputs the signal charge read by the transfer gate. The pixel transistor portion is formed on the insulating layer with the first silicon layer being an active region.

Abstract: A pharmaceutical composition comprising as an active ingredient, an aromatic heterocyclic compound represented by the formula (I): [wherein Q1 represents CR2 (wherein R2 represents a hydrogen atom or the like) or the like; Q2 represents CR3 (wherein R3 represents a hydrogen atom or the like) or the like; Q3 represents a nitrogen atom or the like; R1 represents —C(?O)OR16 (wherein R16 represents a hydrogen atom or the like) or the like; R5 represents a hydrogen atom or the like; R6 represents optionally substituted cycloalkyl or the like; X and Y may be the same or different and each represent CH in which H may be substituted with a substituent or the like; and Z represents a nitrogen atom or the like] or the like is provided.

Abstract: A method for producing a semiconductor device, the method includes the steps of: forming a hard mask layer with a mask opening on a semiconductor substrate in which is formed a source region; forming a side wall mask on the side wall of the mask opening; forming a trench by using the side wall mask and the hard mask layer as a mask in such a way that the trench reaches the source region; removing the side wall mask; forming a gate electrode inside the mask opening and the trench, with a gate insulating film interposed thereunder; forming a side wall on the side wall of the gate electrode; and forming a drain region on the surface of the semiconductor substrate which is adjacent to the gate electrode.

Abstract: Disclosed is a solid-state image pickup apparatus including a semiconductor substrate, a photoelectric converter, a transfer gate, an insulating layer, a first silicon layer, and a pixel transistor portion. The photoelectric converter converts light energy of incident light into electrical energy and obtains a signal charge. The photoelectric converter is formed on a surface side in the semiconductor substrate. The transfer gate reads the signal charge from the photoelectric converter, and the transfer gate is formed on the semiconductor substrate adjacent to the photoelectric converter. The insulating layer is formed on the photoelectric converter in the semiconductor substrate. The first silicon layer is formed on the insulating layer. The pixel transistor portion amplifies and outputs the signal charge read by the transfer gate. The pixel transistor portion is formed on the insulating layer with the first silicon layer being an active region.

Abstract: The present invention provides a benzenoid ansamycin derivative represented by Formula (I) (wherein R1 and R2 each represent a hydrogen atom or are combined together to form a bond, R8 represents a bond or an oxygen atom, R11 represents hydroxy, substituted or unsubstituted lower alkoxy or substituted or unsubstituted lower alkanoyloxy, R15 represents a hydrogen atom or methoxy, R22 represents a hydrogen atom, substituted or unsubstituted lower alkyl, substituted or unsubstituted lower alkanoyl or substituted or unsubstituted aroyl, R4 and R5 each represent a hydrogen atom or are combined together to form a bond, R18 represents a hydrogen atom, or the like, R21 represents hydroxy or the like, and R17 and R19 may be the same or different and each represents a hydrogen atom, or the like) or a pharmaceutically acceptable salt thereof.