Patents by Inventor Shinro Ohta

Shinro Ohta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10207390
    Abstract: A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.
    Type: Grant
    Filed: September 4, 2013
    Date of Patent: February 19, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Noburu Shimizu, Shinro Ohta, Koji Maruyama, Yoichi Kobayashi, Ryuichiro Mitani, Shunsuke Nakai, Atsushi Shigeta
  • Patent number: 8696924
    Abstract: A polishing apparatus is used for polishing and planarizing a substrate such as a semiconductor wafer on which a conductive film such as a copper (Cu) layer or a tungsten (W) layer is formed. The polishing apparatus includes a polishing table having a polishing surface, a motor for rotating the polishing table, a top ring for holding a substrate and pressing the substrate against the polishing surface, a film thickness measuring sensor disposed in the polishing table for scanning a surface of the substrate, and a computing device for processing signals of the film thickness measuring sensor to compute a film thickness of the substrate.
    Type: Grant
    Filed: April 4, 2007
    Date of Patent: April 15, 2014
    Assignees: Ebara Corporation, Kabushiki Kaisha Toshiba
    Inventors: Mitsuo Tada, Taro Takahashi, Motohiro Niijima, Shinro Ohta, Atsushi Shigeta
  • Publication number: 20140004773
    Abstract: A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.
    Type: Application
    Filed: September 4, 2013
    Publication date: January 2, 2014
    Applicants: KABUSHIKI KAISHA TOSHIBA, EBARA CORPORATION
    Inventors: Noburu SHIMIZU, Shinro OHTA, Koji MARUYAMA, Yoichi KOBAYASHI, Ryuichiro MITANI, Shunsuke NAKAI, Atsushi SHIGETA
  • Patent number: 8554356
    Abstract: A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.
    Type: Grant
    Filed: October 5, 2007
    Date of Patent: October 8, 2013
    Assignees: Ebara Corporation, Kabushiki Kaisha Toshiba
    Inventors: Noburu Shimizu, Shinro Ohta, Koji Maruyama, Yoichi Kobayashi, Ryuichiro Mitani, Shunsuke Nakai, Atsushi Shigeta
  • Publication number: 20100015889
    Abstract: The present invention relates to a processing end point detection method for detecting a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate.
    Type: Application
    Filed: October 5, 2007
    Publication date: January 21, 2010
    Inventors: Noburu Shimizu, Shinro Ohta, Koji Maruyama, Yoichi Kobayashi, Ryuichiro Mitani, Shunsuke Nakai, Atsushi Shigeta
  • Publication number: 20070239309
    Abstract: A polishing apparatus is used for polishing and planarizing a substrate such as a semiconductor wafer on which a conductive film such as a copper (Cu) layer or a tungsten (W) layer is formed. The polishing apparatus includes a polishing table having a polishing surface, a motor for rotating the polishing table, a top ring for holding a substrate and pressing the substrate against the polishing surface, a film thickness measuring sensor disposed in the polishing table for scanning a surface of the substrate, and a computing device for processing signals of the film thickness measuring sensor to compute a film thickness of the substrate.
    Type: Application
    Filed: April 4, 2007
    Publication date: October 11, 2007
    Inventors: Mitsuo Tada, Taro Takahashi, Motohiro Niijima, Shinro Ohta, Atsushi Shigeta
  • Patent number: 7101257
    Abstract: A substrate polishing apparatus polishes a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus has a polishing table against which a substrate is pressed and a light-emitting and light-receiving device to emit measurement light from the polishing table to the substrate and to receive reflected light from the substrate for measuring a film on the substrate. The substrate polishing apparatus also has a fluid supply passage for supplying a fluid for measurement, through which the measurement light and the reflected light pass, to a fluid chamber provided at a light-emitting and light-receiving position of the polishing table, and a fluid supply control device for controlling supply of the fluid for measurement to the fluid chamber.
    Type: Grant
    Filed: July 14, 2003
    Date of Patent: September 5, 2006
    Assignees: Ebara Corporation, Shimadzu Corporation
    Inventors: Kazuto Hirokawa, Yoichi Kobayashi, Shunsuke Nakai, Shinro Ohta, Yasuo Tsukuda
  • Patent number: 7081044
    Abstract: A polishing pad (10) has an upper-layer pad (11) having a hole (11a) defined therein, a light-transmittable window (41) disposed in the hole (11a) for allowing light to pass therethrough, and a lower-layer pad (12) disposed below the upper-layer pad (11) and having a light passage hole (12a) defined therein which has substantially the same diameter as the hole (11a) in the upper-layer pad (11). A transparent film (13) with an adhesive agent applied to upper and lower surfaces thereof is interposed between the upper-layer pad (11) and the lower-layer pad (12). The hole (11a) defined in the upper-layer pad (11) and the light passage hole (12a) defined in the lower-layer pad (12) have substantially the same size as each other.
    Type: Grant
    Filed: June 12, 2002
    Date of Patent: July 25, 2006
    Assignee: Ebara Corporation
    Inventors: Shinro Ohta, Kazuo Shimizu
  • Patent number: 7021991
    Abstract: A polishing apparatus has a polishing table having a polishing surface, a top ring for holding a workpiece to be polished and pressing the workpiece against the polishing surface on the polishing table, and a film thickness measuring device embedded in the polishing table. The film thickness measuring device includes a light source for applying light having a predetermined wavelength to a surface of the workpiece, a spectroscope for separating light reflected from the surface of the workpiece, and a charge coupled device array for capturing light separated by the spectroscope. The polishing apparatus also has a controller operable to analyze information captured by the charge coupled device array over the entire surface of the workpiece to obtain a film thickness at a desired point on the surface of the workpiece.
    Type: Grant
    Filed: September 26, 2003
    Date of Patent: April 4, 2006
    Assignee: Ebara Corporation
    Inventors: Kazuo Shimizu, Shinro Ohta, Akihiro Tsukada
  • Publication number: 20040242121
    Abstract: A substrate polishing apparatus polishes a surface of a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus according to the present invention has a rotatable table having a polishing pad for polishing a semiconductor substrate, a light emission and reception device for emitting measurement light through a through hole formed in the polishing pad to the semiconductor substrate and receiving reflected light from the semiconductor substrate so as to measure a film on the semiconductor substrate, and a supply passage for supplying a fluid to a path of the measurement light. The supply passage has an outlet portion positioned in the through hole.
    Type: Application
    Filed: July 14, 2003
    Publication date: December 2, 2004
    Inventors: Kazuto Hirokawa, Shunsuke Nakai, Shinro Ohta, Yutaka Wada, Yoichi Kobayashi
  • Publication number: 20040235393
    Abstract: A substrate polishing apparatus polishes a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus according to the present invention has a polishing table against which a substrate is pressed, a light-emitting and light-receiving device to emit measurement light from the polishing table to the substrate and to receive reflected light from the substrate for measuring a film on the substrate, a fluid supply passage for supplying a fluid for measurement, through which the measurement light and the reflected light pass, to a fluid chamber provided at a light-emitting and light-receiving position of the polishing table, and a fluid supply control device for controlling supply of the fluid for measurement to the fluid chamber.
    Type: Application
    Filed: July 14, 2003
    Publication date: November 25, 2004
    Inventors: Kazuto Hirokawa, Yoichi Kobayashi, Shunsuke Nakai, Shinro Ohta, Yasuo Tsukuda
  • Publication number: 20040235392
    Abstract: A polishing pad (10) has an upper-layer pad (11) having a hole (11a) defined therein, a light-transmittable window (41) disposed in the hole (11a) for allowing light to pass therethrough, and a lower-layer pad (12) disposed below the upper-layer pad (11) and having a light passage hole (12a) defined therein which has substantially the same diameter as the hole (11a) in the upper-layer pad (11). A transparent film (13) with an adhesive agent applied to upper and lower surfaces thereof is interposed between the upper-layer pad (11) and the lower-layer pad (12). The hole (11a) defined in the upper-layer pad (11) and the light passage hole (12a) defined in the lower-layer pad (12) have substantially the same size as each other.
    Type: Application
    Filed: June 16, 2003
    Publication date: November 25, 2004
    Inventor: Shinro Ohta
  • Publication number: 20040067718
    Abstract: A polishing apparatus has a polishing table having a polishing surface, a top ring for holding a workpiece to be polished and pressing the workpiece against the polishing surface on the polishing table, and a film thickness measuring device embedded in the polishing table. The film thickness measuring device includes a light source for applying light having a predetermined wavelength to a surface of the workpiece, a spectroscope for separating light reflected from the surface of the workpiece, and a charge coupled device array for capturing light separated by the spectroscope. The polishing apparatus also has a controller operable to analyze information captured by the charge coupled device array over the entire surface of the workpiece to obtain a film thickness at a desired point on the surface of the workpiece.
    Type: Application
    Filed: September 26, 2003
    Publication date: April 8, 2004
    Inventors: Kazuo Shimizu, Shinro Ohta, Akihiro Tsukada