Patents by Inventor Shintaro Ishiyama

Shintaro Ishiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210138274
    Abstract: The purpose of the present invention is to provide a 10B medicine that can be selectively accumulated in tumor tissues at a low dose in a short time, and can be applied to BNCT. The 10B medicine comprises a compound containing: a peptide capable of selectively binding to tumor vascular endothelial cells; and 10B, wherein the 10B medicine is administered to a subject suffering from cancer at a dose of 300-600 mg per administration, and is accumulated after the administration such that the concentration of 10B in the cancer tissue of the subject becomes 1 ppm or higher.
    Type: Application
    Filed: June 19, 2019
    Publication date: May 13, 2021
    Applicant: HIROSAKI UNIVERSITY
    Inventors: Chikara OHYAMA, Tohru YONEYAMA, Shingo HATAKEYAMA, Shintaro ISHIYAMA
  • Publication number: 20210025063
    Abstract: An electrolytic cell capable of simply electrolyzing carbon dioxide into carbon monoxide and oxygen with low activation energy, and an electrolytic device. The carbon dioxide electrolytic cell includes a cathode, an anode, and a solid electrolyte having oxide ion conductivity. The cathode is the following (A) or (B); (A) a metal and a first mayenite-type compound are included therein or (B) a metal and a second mayenite-type compound are included therein, said second mayenite type compound including a mayenite type compound having electron conductivity.
    Type: Application
    Filed: March 28, 2019
    Publication date: January 28, 2021
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo HOSONO, Toshiharu YOKOYAMA, Yoshitake TODA, Shintaro ISHIYAMA, Masami TAGUCHI, Hiroki TAKAHASHI
  • Patent number: 8236674
    Abstract: A substrate micro-processing method and a semiconductor device manufacturing method in which a stained part does not remain in a finished product even if a residual ion-injected part stays in the finished product. The substrate micro-processing method is one that carries out processing of a substrate by dividing the substrate depthwise, and comprises a proton injection step S11 in which protons are injected from one principal surface side of the substrate and an irradiation step S12 in which the substrate is irradiated with light having the wavelength nearly equal to the absorption wavelength of the defect level formed within the substrate due to the proton injection in order to divide the substrate.
    Type: Grant
    Filed: October 21, 2010
    Date of Patent: August 7, 2012
    Assignee: Japan Atomic Energy Agency
    Inventor: Shintaro Ishiyama
  • Patent number: 7981168
    Abstract: Ceramic materials that are highly resistant to strong acids such as concentrated sulfuric acid and halides such as hydrogen iodide are employed to make block elements through which a large number of circular ingress channels extend in perpendicular directions and which are joined and piled in the heat exchanging medium section to provide a compact heat exchanger that excels not only in corrosion resistance but also in high-temperature strength.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: July 19, 2011
    Assignees: Japan Atomic Energy Research Institute, Kabushiki Kaisha Toshiba
    Inventors: Shintaro Ishiyama, Shigeki Maruyama
  • Publication number: 20110130013
    Abstract: A substrate processing method and a semiconductor device manufacturing method in which a stained part does not remain in a finished product even if a residual ion-injected part stays in the finished product. The substrate processing method is one that carries out processing of a substrate by dividing the substrate depthwise, and comprises a proton injection step S11 in which protons are injected from one principal surface side of the substrate and an irradiation step S12 in which the substrate is irradiated with light having the wavelength nearly equal to the absorption wavelength of the defect level formed within the substrate due to the proton injection in order to divide the substrate.
    Type: Application
    Filed: October 21, 2010
    Publication date: June 2, 2011
    Applicant: JAPAN ATOMIC ENERGY AGENCY
    Inventor: Shintaro Ishiyama
  • Publication number: 20090025919
    Abstract: Ceramic materials that are highly resistant to strong acids such as concentrated sulfuric acid and halides such as hydrogen iodide are employed to make block elements through which a large number of circular ingress channels extend in perpendicular directions and which are joined and piled in the heat exchanging medium section to provide a compact heat exchanger that excels not only in corrosion resistance but also in high-temperature strength.
    Type: Application
    Filed: September 18, 2008
    Publication date: January 29, 2009
    Applicant: Japan Atomic Energy Research Institute
    Inventors: Shintaro Ishiyama, Shigeki Maruyama
  • Publication number: 20070107888
    Abstract: Ceramic materials that are highly resistant to strong acids such as concentrated sulfuric acid and halides such as hydrogen iodide are employed to make block elements through which a large number of circular ingress channels extend in perpendicular directions and which are joined and piled in the heat exchanging medium section to provide a compact heat exchanger that excels not only in corrosion resistance but also in high-temperature strength.
    Type: Application
    Filed: September 1, 2006
    Publication date: May 17, 2007
    Applicants: Japan Atomic Energy Research Institute, Kabushiki Kaisha Toshiba
    Inventors: Shintaro Ishiyama, Shigeki Maruyama
  • Patent number: 7168481
    Abstract: Ceramic materials that are highly resistant to strong acids such as concentrated sulfuric acid and halides such as hydrogen iodide are employed to make block elements through which a large number of circular ingress channels extend in perpendicular directions and which are joined and piled in the heat exchanging medium section to provide a compact heat exchanger that excels not only in corrosion resistance but also in high-temperature strength.
    Type: Grant
    Filed: August 20, 2004
    Date of Patent: January 30, 2007
    Assignees: Japan Atomic Energy Research Institute, Kabushiki Kaisha Toshiba
    Inventors: Shintaro Ishiyama, Shigeki Maruyama
  • Publication number: 20050056410
    Abstract: Ceramic materials that are highly resistant to strong acids such as concentrated sulfuric acid and halides such as hydrogen iodide are employed to make block elements through which a large number of circular ingress channels extend in perpendicular directions and which are joined and piled in the heat exchanging medium section to provide a compact heat exchanger that excels not only in corrosion resistance but also in high-temperature strength.
    Type: Application
    Filed: August 20, 2004
    Publication date: March 17, 2005
    Applicants: Japan Atomic Energy Research Institute, Kabushiki Kaisha Toshiba
    Inventors: Shintaro Ishiyama, Shigeki Maruyama
  • Patent number: 5765096
    Abstract: A method for producing a space shuttle or nuclear reprocessing structural material of an intermetallic compound having a formula NiAl+xMoRe+cB, wherein the atomic ratio of Ni:Al is 56.5:43.5, the atomic ratio of Mo:Re is 1:1, or 1:0.5, x is between 0.1 and 1 at. %, and c is from 0 to 0.2 at. %, including the steps of:mixing Ni and Al powders in the atomic ratio of 56.5:43.5 in an inert gasadding thereto between 0.1 and 1 at. % total of Mo and Re powders in an atomic ratio of 1:1 or 1:0.5 and from 0 to 0.2 at. % of B and mixing to obtain a uniform powder mixture,packing the mixture in a steel capsule to obtain a packed mixture, and Hot Isostatically Pressing the packed mixture at a temperature from 1000.degree. to 1200.degree. C. with 200 MPA pressure to obtain a pressed material, swaging the pressed material to at least 90% theoretical reduction, and obtaining the material having a uniform and refined structure.
    Type: Grant
    Filed: May 29, 1997
    Date of Patent: June 9, 1998
    Assignee: Japan Atomic Energy Research Institute
    Inventor: Shintaro Ishiyama
  • Patent number: 5698006
    Abstract: The improved intermetallic compounds represented by xNiAl+X (x=50.5-63.5), with dopant element X being selected from among Ti, Fe, V, W, Cr, Cu, Mo, Nb, Ta, Hf, Zr and B, are lightweight and have satisfactory oxidation resistance and high-temperature strength and, hence, are useful as structural materials in aerospace (as in space shuttles) and nuclear fields (for use in reprocessing facilities). A representative intermetallic compound having the formula NiAl+x(Mo/Re)+cB, wherein the ratio of Ni:Al is 56.5:43.5, the ratio of Mo:Re is either 1:1 or 1:0.5, x is between 0.1 and 1 at. %, and c is from 0 to 0.2 at. %, is disclosed.
    Type: Grant
    Filed: January 5, 1996
    Date of Patent: December 16, 1997
    Assignee: Japan Atomic Energy Research Institute
    Inventor: Shintaro Ishiyama
  • Patent number: 5244609
    Abstract: A process for preparing an impermeable carbon fiber reinforcing deposit material including placing a preformed carbon fiber material and an impregnating material of pitch or heat-resistant glass or mixtures thereof into a heat-resistant capsule; placing said capsule into a pressing container; heating the mixture to the melt temperature of the impregnating material under pressure of an inert gas; after maintaining temperature for a given time reducing the temperature and pressure; subsequently, raising the temperature gradually while maintaining the reduced pressure; after heating to a maximum temperature, maintaining said maximum temperature at the reduced pressure for a given time; then injecting an inert gas to raise the pressure to a given value; and, after maintaining the pressure for a given time, reducing both the pressure and the temperature.
    Type: Grant
    Filed: November 27, 1991
    Date of Patent: September 14, 1993
    Assignee: Japan Atomic Energy Research Institute
    Inventor: Shintaro Ishiyama