Abstract: Wet-strippable antireflective compositions comprising one or more silicon-containing polymers that are free of Q-monomers and hydridosilanes as polymerized units are provided. These compositions are useful in the manufacture of various electronic devices.

Abstract: A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula: (Ra)1—(Ar)—S+(—CH2—)m·?O3S—(CRb2)n-(L)p-X wherein each Ra is independently a substituted or unsubstituted C1-30 alkyl group, C6-30 aryl group, C7-30 aralkyl group, or combination comprising at least one of the foregoing, Ar is a monocyclic, polycyclic, or fused polycyclic C6-30 aryl group, each Rb is independently H, F, a linear or branched C1-10 fluoroalkyl or a linear or branched heteroatom-containing C1-10 fluoroalkyl, L is a C1-30 linking group optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing heteroatoms, X is a substituted or unsubstituted, C5 or greater monocyclic, polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, and 1 is an integer of 0 to 4, m is an integer of 3 to 20, n is an integer of 0 to 4, and p

Abstract: A switchgear includes a stationary contact, a movable contact able to be shifted between a closed position and an opened position, an electromagnetic actuator able to generate power for shifting the movable contact, the electromagnetic actuator including a stator and a movable element, and a power transmission unit able to shift the movable contact, and to press the movable contact against the stationary contact. The power transmission unit includes a drive unit-side spring bearing portion able to be shifted together with the movable element, a contact-side spring bearing portion to be opposed to the drive unit-side spring bearing portion, and able to be shifted together with the movable contact, and a spring member provided between the drive unit-side spring bearing portion and the contact-side spring bearing portion.

Abstract: Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; R2 is chosen from C1-C15 alkylene; and R3 is chosen from C1-C3 fluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.

Abstract: Wet-strippable antireflective compositions comprising one or more silicon-containing polymers that are free of Q-monomers and hydridosilanes as polymerized units are provided. These compositions are useful in the manufacture of various electronic devices.

Abstract: New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist.

Abstract: Polymeric reaction products of certain aromatic alcohols with certain diaryl-substituted aliphatic alcohols are useful as underlayers in semiconductor manufacturing processes.

Abstract: An image forming apparatus is provided. The image forming apparatus includes a photoconductor, an irradiator, a developing device including a developing roller, a development bias applying device, a toner supplying roller and a supply bias applying device, and a controller. The controller changes supply bias offset by reference to at least one of five parameters including photoconductor travel distance, operation temperature of the developing device, operation humidity of the developing device, continuous operating time of the developing device, and color information of image to be produced. After changing the supply bias offset, the controller forms plural toner patterns for image density adjustment on the photoconductor by changing the development bias, and sets the development bias to a certain bias based on the image densities of the plural toner patterns so that the image produced by the developing device has a targeted image density.

Abstract: Polymeric reaction products of certain aromatic alcohols with certain diaryl-substituted aliphatic alcohols are useful as underlayers in semiconductor manufacturing processes.

Abstract: This invention provides a composition containing an organometallic compound having a chromophore moiety in the metal polymer backbone which allows a wider range of n/k values such that substrate reflectivity can be controlled under various conditions.

Abstract: Multiple-pattern forming methods are provided.

Abstract: This invention provides a composition containing an organometallic compound having a chromophore moiety in the metal polymer backbone which allows a wider range of n/k values such that substrate reflectivity can be controlled under various conditions.

Abstract: Polymeric reaction products of certain substituted tetraarylmethane monomers are useful as underlayers in semiconductor manufacturing processes.

Abstract: Aromatic resin polymers and compositions containing them are useful as underlayers in semiconductor manufacturing processes.

Abstract: A toner container includes a substantially tetrahedral toner-containing portion having an openable edge to discharge toner contained in the toner-containing portion, and a reference fold along which the toner container is foldable after the openable edge is opened. The reference fold extends from the openable edge and is provided on medians of two triangular faces of the toner-containing portion adjoining each other along the openable edge.

Abstract: Polymeric reaction products of certain aromatic alcohols with certain diaryl-substituted aliphatic alcohols are useful as underlayers in semiconductor manufacturing processes.

Abstract: This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that comprise base-cleavable groups.

Abstract: A photoacid generator compound has the formula (I): [A-(CHR1)p]k-(L)-(CH2)m—(C(R2)2)nSO3?Z+??(I) wherein A is a substituted or unsubstituted, monocyclic, polycyclic, or fused polycyclic C5 or greater cycloaliphatic group optionally comprising O, S, N, F, or a combination comprising at least one of the foregoing, R1 is H, a single bond, or a substituted or unsubstituted C1-30 alkyl group, wherein when R1 is a single bond, R1 is covalently bonded to a carbon atom of A, each R2 is independently H, F, or C1-4 fluoroalkyl, wherein at least one R2 is not hydrogen, L is a linking group comprising a sulfonate group, a sulfonamide group, or a C1-30 sulfonate or sulfonamide-containing group, Z is an organic or inorganic cation, p is an integer of 0 to 10, k is 1 or 2, m is an integer of 0 or greater, and n is an integer of 1 or greater.

Abstract: Compositions suitable for forming oxymetal hardmask layers are provided. Methods of forming oxymetal hardmask layers using such compositions are also provided, where the surface of the oxymetal hardmask layer formed has a water contact angle substantially matched to that of subsequently applied organic coatings.

Abstract: Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; R2 is chosen from C1-C15 alkylene; and R3 is chosen from C1-C3 fluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.