Abstract: According to one embodiment, a particle beam control system comprising: a control computer configured to control two scanning electromagnets, wherein the control computer is configured to: calculate deviation amount between a centroid position and a spot position that is a designed irradiation position of the two scanning electromagnets; calculate at least one correction value for correcting the centroid position to the spot position by using the deviation amount; store the at least one correction value in a memory; and correct at least one current value by using the at least one correction value stored in the memory, the at least one current value being a design reference when power is supplied from at least one of two power supplies to at least one of the two scanning electromagnets.

Abstract: A method of measuring the concentration of Fe in a p-type silicon wafer by an SPV method enabling improvement in the measurement accuracy for Fe concentrations of 1×109/cm3 or less. The method of measuring the concentration of Fe in a p-type silicon wafer includes measuring an Fe concentration in the p-type silicon wafer based on measurement using an SPV method. The measurement is performed in an atmosphere in which the total concentration of Na+, NH4+, and K+ is 1.750 ?g/m3 or less, and the total concentration of F?, Cl?, NO2?, PO43?, Br?, NO3?, and SO42? is 0.552 ?g/m3 or less.

Abstract: A method of measuring the concentration of Fe in a p-type silicon wafer by an SPV method enabling improvement in the measurement accuracy for Fe concentrations of 1×109/cm3 or less. The method of measuring the concentration of Fe in a p-type silicon wafer includes measuring an Fe concentration in the p-type silicon wafer based on measurement using an SPV method. The measurement is performed in an atmosphere in which the total concentration of Na+, NH4+, and K+ is 1.750 ?g/m3 or less, and the total concentration of F?, Cl?, NO2?, PO43?, Br?, NO3?, and SO42? is 0.552 ?g/m3 or less.

Abstract: Provided is a method of measuring the concentration of Fe in a p-type silicon wafer by an SPV method enabling improvement in the measurement accuracy for Fe concentrations of 1×109/cm3 or less. The method of measuring the concentration of Fe in a p-type silicon wafer includes measuring an Fe concentration in the p-type silicon wafer based on measurement using an SPV method. The measurement is performed in an atmosphere in which the total concentration of Na+, NH4+, and K+ is 1.750 ?g/m3 or less, and the total concentration of F?, Cl?, NO2?, PO43?, Br?, NO3?, and SO42? is 0.552 ?g/m3 or less.

Abstract: A printer includes a power supply section, a first communication section configured to make wired communication with a first smart device having a battery and supply power from the power supply section to the first smart device, a printing section that performs printing, and a control section, and the control section acquires temperature information, acquires remaining amount information of the battery from the first smart device using the first communication section, dynamically changes a threshold value based on the acquired temperature information in a range less than the maximum value of the remaining amount information, executes a first mode in which power is supplied from the power supply section to the first smart device via the first communication section when the remaining amount information is less than the threshold value, and executes a second mode in which power is not supplied from the power supply section to the first smart device via the first communication section for a predetermined period w

Abstract: A medical apparatus includes an acquirer, an associator, and a display controller. The acquirer acquires information indicating a respiratory waveform of an object and acquires fluoroscopic images of the object captured in time series. The associator associates a tracking value which fluctuates according to a respiratory phase of the object, based on the time-series fluoroscopic images. The display controller causes a display to display the respiratory waveform and a waveform of the tracking value in a comparable form.

Abstract: Provided is a method of measuring the Fe concentration in a p-type silicon wafer by the SPV method, by which the detection limit for the Fe concentration can be lowered, and the measurement can be performed in a short time. The measurement by the SPV method is performed in a measurement mode in which irradiation with a plurality of lights having mutually different wavelengths is performed during the same period under conditions where (i) Time Between Readings is 35 ms or more and 120 ms or less and Time Constant is 20 ms or more, or Time Between Readings is 10 ms or more and less than 35 ms and Time Constant is 100 ms or more, and (ii) Number of Readings is 12 times or less.

Abstract: Provided is a method of measuring the concentration of Fe in a p-type silicon wafer by an SPV method enabling improvement in the measurement accuracy for Fe concentrations of 1×109/cm3 or less. The method of measuring the concentration of Fe in a p-type silicon wafer includes measuring an Fe concentration in the p-type silicon wafer based on measurement using an SPV method. The measurement is performed in an atmosphere in which the total concentration of Na+, NH4+, and K+ is 1.750 ?g/m3 or less, and the total concentration of F?, Cl?, NO2?, PO43?, Br?, NO3?, and SO42? is 0.552 ?g/m3 or less.

Abstract: A medical apparatus according to an embodiment includes an acquirer, an identifier, and a controller. The acquirer acquires a fluoroscopic image of an object from an imager which performs imaging by irradiating the object with an electromagnetic wave to generate the fluoroscopic image. The identifier identifies a target position of the object in the fluoroscopic image. The controller outputs an irradiation permission signal to a therapeutic device which irradiates the object with a therapeutic beam in a case where the target position identified by the identifier is settled within an irradiation permission range.

Abstract: A medical apparatus according to an embodiment includes an acquirer, an identifier, and a controller. The acquirer acquires a fluoroscopic image of an object from an imager which performs imaging by irradiating the object with an electromagnetic wave to generate the fluoroscopic image. The identifier identifies a target position of the object in the fluoroscopic image. The controller outputs an irradiation permission signal to a therapeutic device which irradiates the object with a therapeutic beam in a case where the target position identified by the identifier is settled within an irradiation permission range.

Abstract: A medical apparatus includes an acquirer, an associator, and a display controller. The acquirer acquires information indicating a respiratory waveform of an object and acquires fluoroscopic images of the object captured in time series. The associator associates a tracking value which fluctuates according to a respiratory phase of the object, based on the time-series fluoroscopic images. The display controller causes a display to display the respiratory waveform and a waveform of the tracking value in a comparable form.

Abstract: A movable part tracking and treatment apparatus includes an acquisition unit adapted to acquire a three-dimensional moving image and a first projection image generation unit adapted to generate a first projection moving image. The apparatus further includes an affected part image extraction unit adapted to extract the displaced affected part area from the first projection moving image and a tracing target image extraction unit adapted to extract the displaced tracing target from the first projection moving image. The apparatus also includes a first parameter derivation unit adapted to derive a first parameter indicative of position information on a beam irradiation point and a second parameter derivation unit adapted to derive a second parameter necessary to extract the corresponding tracing target.

Abstract: Provided is a method of measuring the Fe concentration in a p-type silicon wafer by the SPV method, by which the detection limit for the Fe concentration can be lowered, and the measurement can be performed in a short time. The measurement by the SPV method is performed in a measurement mode in which irradiation with a plurality of lights having mutually different wavelengths is performed during the same period under conditions where (i) Time Between Readings is 35 ms or more and 120 ms or less and Time Constant is 20 ms or more, or Time Between Readings is 10 ms or more and less than 35 ms and Time Constant is 100 ms or more, and (ii) Number of Readings is 12 times or less.

Abstract: An aspect of the present invention relates to a method of evaluating metal contamination in a boron-doped p-type silicon wafer, which comprises measuring over time by a microwave photoconductive decay method a recombination lifetime following irradiation with light of a silicon wafer being evaluated and obtaining information on change over time of the recombination lifetime, and comparing the information on change over time of the recombination lifetime that has been obtained with reference information on change over time that has been obtained by calculation or actual measurement of a recombination lifetime of an Fe-contaminated boron-doped p-type silicon wafer to determine whether or not metal contamination other than Fe is present in the silicon wafer being evaluated.

Abstract: According to one embodiment, A movable part tracking and treatment apparatus, includes: an acquisition unit adapted to acquire a three-dimensional moving image by imaging an inside of a body of a patient; a first projection image generation unit adapted to generate a first projection moving image by projecting the three-dimensional moving image on a two-dimensional surface from a fixed direction, the three-dimensional moving image including a tracing target and an affected part area that are part of internal organs in a displaced state, an affected part image extraction unit adapted to extract the displaced affected part area from the first projection moving image, a tracing target image extraction unit adapted to extract the displaced tracing target from the first projection moving image, a first parameter derivation unit is adapted to derive a first parameter indicative of position information on a beam irradiation point selected from the displaced affected part area in the first projection moving image, an

Abstract: An aspect of the present invention relates to a method of evaluating metal contamination in a boron-doped p-type silicon wafer, which comprises measuring over time by a microwave photoconductive decay method a recombination lifetime following irradiation with light of a silicon wafer being evaluated and obtaining information on change over time of the recombination lifetime, and comparing the information on change over time of the recombination lifetime that has been obtained with reference information on change over time that has been obtained by calculation or actual measurement of a recombination lifetime of an Fe-contaminated boron-doped p-type silicon wafer to determine whether or not metal contamination other than Fe is present in the silicon wafer being evaluated.

Abstract: According to one embodiment, A movable part tracking and treatment apparatus, includes: an acquisition unit adapted to acquire a three-dimensional moving image by imaging an inside of a body of a patient; a first projection image generation unit adapted to generate a first projection moving image by projecting the three-dimensional moving image on a two-dimensional surface from a fixed direction, the three-dimensional moving image including a tracing target and an affected part area that are part of internal organs in a displaced state, an affected part image extraction unit adapted to extract the displaced affected part area from the first projection moving image, a tracing target image extraction unit adapted to extract the displaced tracing target from the first projection moving image, a first parameter derivation unit is adapted to derive a first parameter indicative of position information on a beam irradiation point selected from the displaced affected part area in the first projection moving image, an

Abstract: An appropriate stereoscopic image of a subject is readily acquired. Provided is a stereoscopic endoscope device including two image capture elements spaced apart from each other and disposed at a distal end of an insertion section to be inserted into a subject; an angle changing mechanism that changes a relative angle between optical axes of the image capture elements; a distance sensor that detects the distance from the image capture elements to the subject; and a controller that controls the angle changing mechanism on the basis of the distance detected by the distance sensor.

Abstract: According to one embodiment, A movable part tracking and treatment apparatus, includes: an acquisition unit adapted to acquire a three-dimensional moving image by imaging an inside of a body of a patient; a first projection image generation unit adapted to generate a first projection moving image by projecting the three-dimensional moving image on a two-dimensional surface from a fixed direction, the three-dimensional moving image including a tracing target and an affected part area that are part of internal organs in a displaced state, an affected part image extraction unit adapted to extract the displaced affected part area from the first projection moving image, a tracing target image extraction unit adapted to extract the displaced tracing target from the first projection moving image, a first parameter derivation unit is adapted to derive a first parameter indicative of position information on a beam irradiation point selected from the displaced affected part area in the first projection moving image, an

Abstract: An aspect of the present invention relates to a method of evaluating metal contamination in a boron-doped p-type silicon wafer, which comprises measuring over time by a microwave photoconductive decay method a recombination lifetime following irradiation with light of a silicon wafer being evaluated and obtaining information on change over time of the recombination lifetime, and comparing the information on change over time of the recombination lifetime that has been obtained with reference information on change over time that has been obtained by calculation or actual measurement of a recombination lifetime of an Fe-contaminated boron-doped p-type silicon wafer to determine whether or not metal contamination other than Fe is present in the silicon wafer being evaluated.