Abstract: A slurry recycling system for a CMP apparatus includes a flow path through which a slurry used in the CMP apparatus flows. A first filter is disposed in the flow path for filtering out foreign matter of a particle size of more than 0.5 microns mixed in said slurry. A second filter is preferably disposed in the flow path at a location upstream of and away from the first filter for filtering out foreign matter of a particle size of more than 10 microns mixed in said slurry. Preferably, provisions are made for a concentration adjuster for adjusting the concentration of abrasives in said slurry to substantially an initial value before use, and a pH adjuster for adjusting the pH of said slurry to substantially an initial pH value before use.

Abstract: A plasma etching method and apparatus are provided in which a distance between an ejection opening (20a) in a plasma generator (2) for ejecting an active species gas and a surface of an object to be etched can be changed to thereby shorten the time required for a surface flattening operation and reduce the cost of equipment as well. To this end, the ejection opening (20a) of a predetermined diameter is disposed in confrontation with a desired convex of the object to be etched in the form of a wafer (110). The active species gas in the form of an F gas (G) is ejected from the ejection opening (20a) to the convex to thereby flatten it through etching. A distance between the ejection opening and the convex is changed by means of a Z drive mechanism (4) to provide an etching area corresponding to an area of the convex, thus performing effective flattening of the wafer (110).

Abstract: The vapor phase growth on semiconductor wafers is carried out by an apparatus in which a multiplicity of semiconductor wafers are held by a holder so that the semiconductor wafers lie one over another in a vertical direction, and are rotated together with the holder, the holder is placed in a heater disposed in a reaction vessel, a raw material gas supply nozzle and a raw material gas exhaust nozzle are provided within the heater so that the semiconductor wafers are interposed between the gas supply nozzle and the gas discharge nozzle, and the gas supply nozzle and the gas discharge nozzle have gas supply holes and gas discharge holes, respectively, so that a raw material gas can flow on each semiconductor wafer in horizontal directions. When the temperature of the heater is raised by a heating source to heat the semiconductor wafers, the raw material gas is supplied from the gas supply holes to each semiconductor wafer, and thus a uniform layer is grown on each semiconductor wafer from the raw material gas.

Abstract: A dry-etching process comprising dry-etching treatment of semiconductor material by action of a gas and, if necessary, cleaning treatment, characterized in that at least one of the dry-etching and cleaning treatments is conducted under action of a gas composed essentially of a fluorinated ether.

Abstract: A surface acoustic wave device, a method for manufacturing the same and a manufacturing equipment therefor are disclosed. In the surface acoustic wave device having functional elements such as input and output interdigital electrodes of Al, Al-Si alloy or Al-Cu-Si alloy thin film strips and a grating type reflector, arranged on a piezoelectric substrate and any other bus conductors arranged on the same substrate, at least a portion of the functional elements and the bus conductors having a high frequency metal strip having a line width of no more than 2 .mu.m, at least the metal strip having the width of no more than 2 .mu.m has a film thickness of no less than 0.25 .mu.

Abstract: A dry-etching method for working SiO.sub.2, phospho-silicate glass, Si, Mo, W, Cr, TiW, Si.sub.3 N.sub.4 or the like by the use of a glow discharge plasma involves the steps of introducing He, Ar, N.sub.2, O.sub.2 or a mixed gas thereof into a reaction chamber from the outside; and effecting the plasma discharge in the reaction chamber so that a reactive gas is liberated from a high molecular resin material arranged in the reaction chamber and containing fluorine atoms. The dry-etching method requires and uses no expensive gas containing a fluorocarbon, but has sufficient etching rate and selectivity.

Abstract: A plasma etcher wherein the provision of a gas outlet directly in an etching chamber is avoided and wherein a subchamber having a sufficient capacity is connected to the etching chamber through a joint part, the gas outlet being provided in this subchamber. With the apparatus, the distribution of etching rates in plasma etching becomes uniform.

Abstract: Disclosed is a method for preventing corrosion of Al and Al alloys processed by the dry-etching method, which comprises (i) the step of sputtering Al or Al alloy in an ammonia-containing atmosphere and (ii) the step of washing the sputtered Al or Al alloy with an alkaline aqueous solution and then with water after termination of the step (i).According to this method, corrosion of Al or Al alloy by halogen element-containing substances stuck to Al or Al alloy during the dry-etching treatment can be effectively prevented.

Abstract: Method and apparatus for monitoring a dry etching process using gas plasma, wherein a ratio of a spectrum intensity which varies depending on the process of the etching process to a spectrum intensity which is independent of the process of the etching process is determined and a resulting signal intensity is monitored. The completion of the etching process can be exactly determined irrespective of variation of the etching conditions.

Abstract: A method for dry-etching Al and Al alloys is disclosed, which comprises producing plasma discharges with a mixed gas comprising boron trichloride and freon and/or oxygen incorporated therein and patterning Al or an Al alloy by the produced discharges. In this dry etching method, the etch rate of Al or an Al alloy can be remarkably improved over the etch rate attainable according to the conventional techniques, and the difference of the etch rate between Al or an Al alloy and other material can be remarkably increased.