Patents by Inventor Shinya Morita

Shinya Morita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10351951
    Abstract: A substrate treatment apparatus includes: a reaction tube including a substrate treatment region in which a substrate is treated; and a furnace opening member disposed in a lower portion of the reaction tube. The reaction tube includes a flange formed to protrude outward in the lower portion of the reaction tube, and an extension portion formed to extend downward from a lower end of the flange, the extension portion being formed to have a thickness larger than a thickness of the reaction tube at a position corresponding to the substrate treatment region, and being configured to cover an inner circumferential surface of the furnace opening member. An inner surface of the extension portion protrudes more inward than an inner surface of the reaction tube at the position corresponding to the substrate treatment region.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: July 16, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Keishin Yamazaki, Satoru Murata, Shinya Morita
  • Publication number: 20190195224
    Abstract: A scroll compressor includes a crank shaft, an orbiting scroll, and a frame. The crank shaft has a lubricant channel allowing lubricant to flow through the lubricant channel. The orbiting scroll is attached to the crank shaft and includes a base plate that is discoidal. The frame has a thrust surface against which the orbiting scroll slides. The thrust surface has an annular shape and faces an outer circumferential region of one surface of the base plate of the orbiting scroll. The orbiting scroll has an inner channel and a lubricant channel groove. The inner channel allows the lubricant supplied through the crank shaft to flow outward. The lubricant channel groove has an annular shape in the outer circumferential region of the one surface of the base plate facing the thrust surface and allows the lubricant supplied through the inner channel to be supplied to the thrust surface.
    Type: Application
    Filed: March 8, 2017
    Publication date: June 27, 2019
    Inventors: Tomokazu MATSUI, Kohei TATSUWAKI, Yuji TAKAMURA, Shinya MORITA
  • Patent number: 10287160
    Abstract: [Object] To provide an electrostatic device capable of improving device characteristics. [Solving Means] An electrostatic device according to an embodiment of the present technology includes an electrically conductive base material, a first conductor layer, a second conductor layer, and a bonding layer. The first conductor layer includes a first electrode portion and a first base portion and is connected to a signal line. The first base portion supports the first electrode portion and is disposed on the base material. The second conductor layer includes a second electrode portion and a second base portion and is connected to a reference potential. The second electrode portion is opposed to the first electrode portion in a first axis direction and configured to be movable relative to the first electrode portion in the first axis direction. The second base portion supports the second electrode portion and is disposed on the base material.
    Type: Grant
    Filed: August 18, 2015
    Date of Patent: May 14, 2019
    Assignee: Sony Corporation
    Inventors: Akira Akiba, Mitsuo Hashimoto, Shinya Morita, Munekatsu Fukuyama
  • Patent number: 10256091
    Abstract: The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])?0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5. [In]/([In]+[Zn]+[Sn])?0.3??(1), [In]/([In]+[Zn]+[Sn])?1.4×{[Zn]/([Zn]+[Sn])}?0.5??(2), [Zn]/([In]+[Zn]+[Sn])?0.83??(3), and 0.1?[In]/([In]+[Zn]+[Sn])??(4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.
    Type: Grant
    Filed: October 11, 2016
    Date of Patent: April 9, 2019
    Assignees: Kobe Steel, Ltd., Samsung Display Co., Ltd.
    Inventors: Hiroaki Tao, Aya Miki, Shinya Morita, Satoshi Yasuno, Toshihiro Kugimiya, Jae Woo Park, Je Hun Lee, Byung Du Ahn, Gun Hee Kim
  • Publication number: 20190017168
    Abstract: Provided is a technique capable of suppressing the occurrence of by-products by suppressing adhesion of the by-products. A substrate processing apparatus includes: a reaction tube where a substrate is processed; a furnace opening unit disposed at a lower end of the reaction tube and having an upper surface and an inner circumferential surface, the furnace opening unit including: a concave portion disposed on the upper surface; and a convex portion having at least one notch connecting the concave portion to the inner circumferential surface; a cover covering at least the inner circumferential surface with a predetermined gap therebetween; and a gas supply unit configured to supply a gas to the concave portion.
    Type: Application
    Filed: September 20, 2018
    Publication date: January 17, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kosuke TAKAGI, Shinya MORITA, Naonori AKAE, Keishin YAMAZAKI
  • Patent number: 10074491
    Abstract: [Object] To be capable of promptly performing a switching operation of a switch. [Solving Means] In a switching apparatus according to an embodiment of the present technology, a movable electrode includes a first movable electrode piece, a second movable electrode piece, and a movable contact point. A first fixed electrode includes first and second fixed electrode pieces, the first and second fixed electrode pieces facing each other with the first movable electrode piece disposed between the first and second fixed electrode pieces, the first fixed electrode piece facing the first movable electrode piece with a gap narrower than a gap between the second fixed electrode piece and the first movable electrode piece.
    Type: Grant
    Filed: July 10, 2015
    Date of Patent: September 11, 2018
    Assignee: Sony Corporation
    Inventor: Shinya Morita
  • Publication number: 20170369303
    Abstract: An electrostatic actuator includes a base, a movable electrode including a semiconductor and supported to the base to be displaceable in a first direction, and a fixed electrode including the semiconductor and fixed to the base, in which the fixed electrode faces the movable electrode in a state of being separated therefrom in the first direction. The electrostatic actuator includes a high-resistance region formed in at least a portion of each of respective facing surfaces of the movable electrode and the fixed electrode, and lower in impurity concentration than a surrounding region thereof.
    Type: Application
    Filed: November 27, 2015
    Publication date: December 28, 2017
    Inventors: SHINYA MORITA, KOICHI IKEDA
  • Publication number: 20170335452
    Abstract: A substrate treatment apparatus includes: a reaction tube including a substrate treatment region in which a substrate is treated; and a furnace opening member disposed in a lower portion of the reaction tube. The reaction tube includes a flange formed to protrude outward in the lower portion of the reaction tube, and an extension portion formed to extend downward from a lower end of the flange, the extension portion being formed to have a thickness larger than a thickness of the reaction tube at a position corresponding to the substrate treatment region, and being configured to cover an inner circumferential surface of the furnace opening member. An inner surface of the extension portion protrudes more inward than an inner surface of the reaction tube at the position corresponding to the substrate treatment region.
    Type: Application
    Filed: August 1, 2017
    Publication date: November 23, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Keishin YAMAZAKI, Satoru MURATA, Shinya MORITA
  • Publication number: 20170278646
    Abstract: [Object] To be capable of promptly performing a switching operation of a switch. [Solving Means] In a switching apparatus according to an embodiment of the present technology, a movable electrode includes a first movable electrode piece, a second movable electrode piece, and a movable contact point. A first fixed electrode includes first and second fixed electrode pieces, the first and second fixed electrode pieces facing each other with the first movable electrode piece disposed between the first and second fixed electrode pieces, the first fixed electrode piece facing the first movable electrode piece with a gap narrower than a gap between the second fixed electrode piece and the first movable electrode piece.
    Type: Application
    Filed: July 10, 2015
    Publication date: September 28, 2017
    Applicant: Sony Corporation
    Inventor: Shinya MORITA
  • Patent number: 9748707
    Abstract: A signal transmission cable has a cable including a dielectric layer and a metallic layer. The signal transmission cable further includes a connector having a chip with a terminal. The connector includes a substrate having an organic layer, and a portion of the organic layer extends from the substrate so as to form the dielectric layer of the cable. The metallic layer is located on the dielectric layer and is directly connected to the terminal.
    Type: Grant
    Filed: May 11, 2016
    Date of Patent: August 29, 2017
    Assignee: SONY CORPORATION
    Inventors: Akira Akiba, Mitsuo Hashimoto, Shinya Morita, Shun Mitarai, Mikihiro Taketomo, Kazunao Oniki, Koichi Ikeda
  • Publication number: 20170183219
    Abstract: [Object] To provide an electrostatic device capable of improving device characteristics. [Solving Means] An electrostatic device according to an embodiment of the present technology includes an electrically conductive base material, a first conductor layer, a second conductor layer, and a bonding layer. The first conductor layer includes a first electrode portion and a first base portion and is connected to a signal line. The first base portion supports the first electrode portion and is disposed on the base material. The second conductor layer includes a second electrode portion and a second base portion and is connected to a reference potential. The second electrode portion is opposed to the first electrode portion in a first axis direction and configured to be movable relative to the first electrode portion in the first axis direction. The second base portion supports the second electrode portion and is disposed on the base material.
    Type: Application
    Filed: August 18, 2015
    Publication date: June 29, 2017
    Applicant: Sony Corporation
    Inventors: Akira Akiba, Mitsuo Hashimoto, Shinya Morita, Munekatsu Fukuyama
  • Patent number: 9660103
    Abstract: This thin film transistor comprises, on a substrate, at least a gate electrode, a gate insulating film, an oxide semiconductor layer, a source-drain electrode, and two or more protective films. The oxide semiconductor layer comprises Sn, O and one or more elements selected from the group consisting of In, Ga and Zn. In addition, the two or more protective films are composed of at least a first protective film that is in contact with the oxide semiconductor film, and one or more second protective films other than the first protective film. The first protective film is a SiOx film having a hydrogen concentration of 3.5 atomic % or lower.
    Type: Grant
    Filed: June 24, 2014
    Date of Patent: May 23, 2017
    Assignee: Kobe Steel, Ltd.
    Inventors: Mototaka Ochi, Shinya Morita, Yasuyuki Takanashi, Hiroshi Goto, Toshihiro Kugimiya
  • Patent number: 9647126
    Abstract: Provided is an oxide semiconductor configured to be used in a thin film transistor having high field-effect mobility; a small shift in threshold voltages against light and bias stress; excellent stress resistance. The oxide semiconductor has also excellent resistance to a wet-etchant for patterning of a source-drain electrode. The oxide semiconductor comprises In, Zn, Ga, Sn and O, and satisfies the requirements represented by expressions (1) to (4) shown below, wherein [In], [Zn], [Ga], and [Sn] represent content (in atomic %) of each of the elements relative to the total content of all the metal elements other than oxygen in the oxide. (1.67×[Zn]+1.67×[Ga])?100??(1) {([Zn]/0.95)+([Sn]/0.40)+([In]/0.
    Type: Grant
    Filed: May 28, 2013
    Date of Patent: May 9, 2017
    Assignee: Kobe Steel, Ltd.
    Inventors: Shinya Morita, Kenta Hirose, Aya Miki, Toshihiro Kugimiya
  • Patent number: 9640357
    Abstract: There is provided an electronic device including a first member formed to include at least a part of a substrate material, a second member formed to include at least a part of the substrate material and configured to be relatively movable with respect to the first member, and a fuse configured to include at least a part of the substrate material and configured to electrically connect the first member to the second member via the substrate material.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: May 2, 2017
    Assignee: Sony Corporation
    Inventors: Mitsuo Hashimoto, Akira Akiba, Hideo Niikura, Satoshi Mitani, Shinya Morita, Kunihiko Saruta
  • Publication number: 20170088948
    Abstract: Provided is a technique capable of suppressing the occurrence of by-products by suppressing adhesion of the by-products. A substrate processing apparatus includes: a reaction tube where a substrate is processed; a furnace opening unit disposed at a lower end of the reaction tube and having an upper surface and an inner circumferential surface, the furnace opening unit including: a concave portion disposed on the upper surface; and a convex portion having at least one notch connecting the concave portion to the inner circumferential surface; a cover covering at least the inner circumferential surface with a predetermined gap therebetween; and a gas supply unit configured to supply a gas to the concave portion.
    Type: Application
    Filed: February 16, 2015
    Publication date: March 30, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kosuke TAKAGI, Shinya MORITA, Naonori AKAE, Keishin YAMAZAKI
  • Publication number: 20170053800
    Abstract: The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])?0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5. [In]/([In]+[Zn]+[Sn])?0.3 - - - (1), [In]/([In]+[Zn]+[Sn])?1.4×{[Zn]/([Zn]+[Sn])}?0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])?0.83 - - - (3), and 0.1?[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.
    Type: Application
    Filed: October 11, 2016
    Publication date: February 23, 2017
    Applicants: KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel, Ltd.), Samsung Display Co., Ltd.
    Inventors: Hiroaki TAO, Aya MIKI, Shinya MORITA, Satoshi YASUNO, Toshihiro KUGIMIYA, Jae Woo PARK, Je Hun LEE, Byung Du AHN, Gun Hee KIM
  • Patent number: 9553201
    Abstract: The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: January 24, 2017
    Assignees: Samsung Display Co., Ltd., Kobe Steel, Ltd.
    Inventors: Byung Du Ahn, Ji Hun Lim, Gun Hee Kim, Kyoung Won Lee, Je Hun Lee, Hiroshi Goto, Aya Miki, Shinya Morita, Toshihiro Kugimiya, Yeon Hong Kim, Yeon Gon Mo, Kwang Suk Kim
  • Patent number: D773609
    Type: Grant
    Filed: February 27, 2015
    Date of Patent: December 6, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Shinya Morita, Masahiro Miyake, Masato Terasaki, Naoki Matsumoto, Naonori Akae
  • Patent number: D789311
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: June 13, 2017
    Assignees: HITACHI KOKUSAI ELECTRIC INC., TECHNO QUARTZ INC.
    Inventors: Hiromi Okada, Masayuki Yamada, Satoshi Aizawa, Shinya Morita, Masayoshi Minami, Kazuhisa Osaka
  • Patent number: D791091
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: July 4, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hiromi Okada, Shinya Morita, Satoshi Aizawa, Masayoshi Minami, Kazuyuki Okuda, Masayuki Yamada