Abstract: A workpiece holder for slicing the workpiece by a wire saw including a workpiece plate which is bonded and fixed to the workpiece through a pad plate, and a holder main body which supports the workpiece plate. The workpieces at an x axis direction and a direction vertical to the same is a y axis direction, the workpiece plate is bonded and fixed to the workpiece to correct a deviation of a crystal orientation axis of the workpiece in the x axis direction. The workpiece holder can adjust a tilt in the y axis direction of the workpiece by tilting the workpiece plate in the y axis direction. The workpiece holder can realize slicing an ingot conforming to specifications with rigorous orientation standards in an external setup manner without using a wire saw including an orientation adjustment mechanism for a single crystal ingot, and a method for slicing a workpiece.

Abstract: A method for determining front and back of a single-crystal wafer including: using, as the single-crystal wafer, one having a crystal plane which is laterally asymmetrical to a reference direction connecting a center of a cut for orientation identification formed in an end face of the single-crystal wafer with a center of the single-crystal wafer; noticing the laterally asymmetrical crystal plane, applying an X-ray to the single-crystal wafer, and detecting a diffracted X-ray to measure an angle formed between an orientation of the noticed crystal plane and the reference direction; and determining whether a surface of the single-crystal wafer is a front surface or a back surface from a value of the measured angle. Consequently, the method for determining a front and a back of a single-crystal wafer which can assuredly determine the front and the back of the single-crystal wafer and is superior in cost can be provided.

Abstract: A method for determining front and back of a single-crystal wafer including: using, as the single-crystal wafer, one having a crystal plane which is laterally asymmetrical to a reference direction connecting a center of a cut for orientation identification formed in an end face of the single-crystal wafer with a center of the single-crystal wafer; noticing the laterally asymmetrical crystal plane, applying an X-ray to the single-crystal wafer, and detecting a diffracted X-ray to measure an angle formed between an orientation of the noticed crystal plane and the reference direction; and determining whether a surface of the single-crystal wafer is a front surface or a back surface from a value of the measured angle. Consequently, the method for determining a front and a back of a single-crystal wafer which can assuredly determine the front and the back of the single-crystal wafer and is superior in cost can be provided.

Abstract: A workpiece holder for slicing the workpiece by a wire saw including a workpiece plate which is bonded and fixed to the workpiece through a pad plate, and a holder main body which supports the workpiece plate. The workpieces at an x axis direction and a direction vertical to the same is a y axis direction, the workpiece plate is bonded and fixed to the workpiece to correct a deviation of a crystal orientation axis of the workpiece in the x axis direction. The workpiece holder can adjust a tilt in the y axis direction of the workpiece by tilting the workpiece plate in the y axis direction. The workpiece holder can realize slicing an ingot conforming to specifications with rigorous orientation standards in an external setup manner without using a wire saw including an orientation adjustment mechanism for a single crystal ingot, and a method for slicing a workpiece.

Abstract: A pair of box-like device halves are molded from polyethylene terephthalate or like elastic material. Each device half has a horizontal edge wall having a protuberance and a recess, and also raised guides and recessed guides, and it also has a downwardly convex semiconductor accommodation wall formed between its opposite side walls for accommodating semiconductor crystal. The device half further has legs extending to a greater extent than the arcuate sectional profile outer surface of the semiconductor accommodation wall. Semiconductor crystal is set in one of the device halves, which is then covered by the other device half such that the raised guides and recessed guides of the two device halves engage one another and that the protuberances and recesses engage one another. The semiconductor crystal is thus accommodated in the device halves such that it is pushed by the elastic forces of the semiconductor accommodation walls.