Abstract: An electrochromic structure includes: a substrate including a first surface and a second surface opposite to the first surface; a first conductive layer located on the first surface; a color changing functional layer located on a surface of the first conductive layer; a second conductive layer located on a surface of the color changing functional layer, where the second conductive layer is divided into a first isolation region and a first conductive region which are electrically isolated; a first electrode located in the first isolation region, where the first electrode penetrates the color changing functional layer and is electrically connected to the first conductive layer; a second electrode located on a surface of and electrically connected to the second conductive layer in the first conductive region; and a first light shielding layer for shielding the first isolation region.

Abstract: An electrochromic structure includes: a substrate including a first surface and a second surface opposite to the first surface; a first conductive layer located on the first surface; a color changing functional layer located on a surface of the first conductive layer; a second conductive layer located on a surface of the color changing functional layer, where the second conductive layer is divided into a first isolation region and a first conductive region which are electrically isolated; a first electrode located in the first isolation region, where the first electrode penetrates the color changing functional layer and is electrically connected to the first conductive layer; a second electrode located on a surface of and electrically connected to the second conductive layer in the first conductive region; and a first light shielding layer for shielding the first isolation region.

Abstract: Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.

Abstract: A measurement system for taking a reading in a test zone on a surface of a substrate. A chamber forms an environment, a surface treatment station dispenses a stabilizing chemical in the test zone, a charge deposition station deposits a charge in the test zone, and a QV measurement station takes a QV based measurement in the test zone. Where the surface treatment station, the charge deposition station, and the QV measurement station all interact with the substrate within the chamber. In this manner, reliable QV measurements are taken on the substrate by controlling charge spreading with the stabilizing chemical. QV measurement stability is also improved by reducing the influence of the time trending on substrates with reactive dielectrics, such as on silicon oxynitride and high-k surfaces.

Abstract: A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.

Abstract: Various methods and systems for determining one or more properties of a specimen are provided. One system for determining a property of a specimen is configured to illuminate a specimen with different wavelengths of light substantially simultaneously. The different wavelengths of light are modulated at substantially the same frequency. The system is also configured to perform at least two measurements on the specimen. A minority carrier diffusion length of the specimen may be determined from the measurements and absorption coefficients of the specimen at the different wavelengths. Another system for detecting defects on a specimen is configured to deposit a charge at multiple locations on an upper surface of the specimen. This system is also configured to measure a vibration of a probe at the multiple locations. Defects may be detected on the specimen using a two-dimensional map of the specimen generated from the measured surface voltages.

Abstract: Test pads, methods, and systems for measuring properties of a wafer are provided. One test pad formed on a wafer includes a test structure configured such that one or more electrical properties of the test structure can be measured. The test pad also includes a conductive layer formed between the test structure and the wafer. The conductive layer prevents structures located under the test structure between the conductive layer and the wafer from affecting the one or more electrical properties of the test structure during measurement. One method for assessing plasma damage of a wafer includes measuring one or more electrical properties of a test structure formed on the wafer and determining an index characterizing the plasma damage of the test structure using the one or more electrical properties.

Abstract: Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.

Abstract: Various methods and systems for determining one or more properties of a specimen are provided. One system for determining a property of a specimen is configured to illuminate a specimen with different wavelengths of light substantially simultaneously. The different wavelengths of light are modulated at substantially the same frequency. The system is also configured to perform at least two measurements on the specimen. A minority carrier diffusion length of the specimen may be determined from the measurements and absorption coefficients of the specimen at the different wavelengths. Another system for detecting defects on a specimen is configured to deposit a charge at multiple locations on an upper surface of the specimen. This system is also configured to measure a vibration of a probe at the multiple locations. Defects may be detected on the specimen using a two-dimensional map of the specimen generated from the measured surface voltages.

Abstract: A method and a system for calibrating the work function of a non-contact voltage sensor are provided. The method includes preparing a reference sample to have a stable work function, measuring a voltage of the sample using a non-contact voltage sensor, and determining a work function correction factor of the sensor from the measured voltage. In turn, the calibrated work function may be used to adjust voltages of substrates measured by the sensor. A corona gun which includes a first electrode and one or more conductive rods is provided. In some embodiments, the conductive rods may be angled between 0 and 90 degrees with respect to a first electrode sidewall and/or be concentrically arranged less than 90 degrees from each other. In addition or alternatively, the corona gun may be adapted to alter its length and/or include a second electrode partially inset within a space surrounded by the first electrode.

Abstract: Non-contact methods for determining a parameter of an insulating film are provided. One method includes measuring at least two surface voltages of the insulating film. The surface voltages are measured after different charge depositions. Measuring the surface voltages is performed in two or more sequences. The method also includes determining individual parameters for the two or more sequences from the surface voltages and the charge depositions. In addition, the method includes determining the parameter of the insulating film as an average of the individual parameters. The parameter is substantially independent of leakage in the insulating film. Another method includes determining a characteristic of nitrogen in an insulating film using two parameters of the insulating film selected from equivalent oxide thickness, optical thickness, and a measure of leakage through the insulating film. The characteristic may be a nitrogen dose, a nitrogen percentage, or a presence of nitrogen in the insulating film.

Abstract: A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.

Abstract: A flat-panel display is fabricated by a process in which a spacer (24) having a rough face (54 or 56) is positioned between a pair of plate structure (20 and 22). When electrons strike the spacer, the roughness in the spacer's face causes the number of secondary electrons that escape the spacer to be reduced, thereby alleviating positive charge buildup on the spacer. As a result, the image produced by the display is improved. The spacer facial roughness can be achieved in various ways such as providing suitable depressions (60, 62, 64, 66, 70, 74, or 80) or/and protuberances (82, 84, 88, and 92) along the spacer's face.

Abstract: A protected faceplate structure of a field emission display device is disclosed in one embodiment. Specifically, in one embodiment, the present invention recites a faceplate of a field emission display device wherein the faceplate of the field emission display device is adapted to have phosphor containing wells disposed above one side thereof. The present embodiment is further comprised of a barrier layer which is disposed over the one side of said faceplate which is adapted to have phosphor containing wells disposed thereabove. The barrier layer of the present embodiment is adapted to prevent degradation of the faceplate. Specifically, the barrier layer of the present embodiment is adapted to prevent degradation of the faceplate due to electron bombardment by electrons directed towards the phosphor containing wells.

Abstract: A protected faceplate structure of a field emission display device is disclosed in one embodiment. Specifically, in one embodiment, the present invention recites a faceplate of a field emission display device wherein the faceplate of the field emission display device is adapted to have phosphor containing wells disposed above one side thereof. The present embodiment is further comprised of a barrier layer which is disposed over the one side of said faceplate which is adapted to have phosphor containing wells disposed thereabove. The barrier layer of the present embodiment is adapted to prevent degradation of the faceplate. Specifically, the barrier layer of the present embodiment is adapted to prevent degradation of the faceplate due to electron bombardment by electrons directed towards the phosphor containing wells.

Abstract: A light-emitting device (52) suitable for a flat-panel cathode-ray tube display contains a light-emissive region (66) formed over a plate (64). The light-emissive region contains a plurality of light-emissive particles (72). Part of the outer surface of each of a group of the light-emissive particles is conformally covered with a group of intensity-enhancement coatings (82 and 84).

Abstract: Various methods and systems for determining one or more properties of a specimen are provided. One system for determining a property of a specimen is configured to illuminate a specimen with different wavelengths of light substantially simultaneously. The different wavelengths of light are modulated at substantially the same frequency. The system is also configured to perform at least two measurements on the specimen. A minority carrier diffusion length of the specimen may be determined from the measurements and absorption coefficients of the specimen at the different wavelengths. Another system for detecting defects on a specimen is configured to deposit a charge at multiple locations on an upper surface of the specimen. This system is also configured to measure a vibration of a probe at the multiple locations. Defects may be detected on the specimen using a two-dimensional map of the specimen generated from the measured surface voltages.

Abstract: A method and a system for calibrating the work function of a non-contact voltage sensor are provided. The method includes preparing a reference sample to have a stable work function, measuring a voltage of the sample using a non-contact voltage sensor, and determining a work function correction factor of the sensor from the measured voltage. In turn, the calibrated work function may be used to adjust voltages of substrates measured by the sensor. A corona gun which includes a first electrode and one or more conductive rods is provided. In some embodiments, the conductive rods may be angled between 0 and 90 degrees with respect to a first electrode sidewall and/or be concentrically arranged less than 90 degrees from each other. In addition or alternatively, the corona gun may be adapted to alter its length and/or include a second electrode partially inset within a space surrounded by the first electrode.

Abstract: Inert gas provided at a suitable level inside a hermetically sealed cathode-ray tube display, typically of the flat-panel type, enables the display's electron-emitting device (20) to be automatically cleaned during display operation subsequent to final display sealing. Upon being struck by electrons emitted by the electron-emitting device, atoms (68) of the inert gas ionize to produce positively charged ions (124) which travel backward to the electron-emitting device and dislodge overlying contaminant material (130 and 132). A getter (26) collects dislodged contaminant. A reservoir (28) provides inert gas to replace inert gas lost during the cleaning process.

Abstract: The present invention provides a spacer assembly which is tailored to provide a secondary electron emission coefficient of approximately 1 for the spacer assembly when the spacer assembly is subjected to flat panel display operating voltages. The present invention further provides a spacer assembly which accomplishes the above achievement and which does not degrade severely when subjected to electron bombardment. The present invention further provides a spacer assembly which accomplishes both of the above-listed achievements and which does not significantly contribute to contamination of the vacuum environment of the flat panel display or be susceptible to contamination that may evolve within the tube. Specifically, in one embodiment, the present invention is comprised of a spacer structure which has a specific secondary electron emission coefficient function associated therewith.