Patents by Inventor Shizuki NAKAJIMA
Shizuki NAKAJIMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11417625Abstract: A method for manufacturing a semiconductor device includes (i) a step of preparing a first semiconductor chip having a first electrode pad thereon and a second semiconductor chip having a second electrode pad thereon and larger in thickness than the first semiconductor chip, the second electrode pad being larger in size than the first electrode pad, (ii) a step of mounting the first semiconductor chip and the second semiconductor chip on the same planarized surface of a substrate having a uniform thickness, (iii) a step of bonding a ball formed by heating and melting a bonding wire to the second electrode pad, (iv) a step of first-bonding the bonding wire to the first electrode pad, and (v) a step of second-bonding the bonding wire to the ball.Type: GrantFiled: September 14, 2020Date of Patent: August 16, 2022Assignee: MURATA MANUFACTURING CO., LTD.Inventor: Shizuki Nakajima
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Publication number: 20200411465Abstract: A method for manufacturing a semiconductor device includes (i) a step of preparing a first semiconductor chip having a first electrode pad thereon and a second semiconductor chip having a second electrode pad thereon and larger in thickness than the first semiconductor chip, the second electrode pad being larger in size than the first electrode pad, (ii) a step of mounting the first semiconductor chip and the second semiconductor chip on the same planarized surface of a substrate having a uniform thickness, (iii) a step of bonding a ball formed by heating and melting a bonding wire to the second electrode pad, (iv) a step of first-bonding the bonding wire to the first electrode pad, and (v) a step of second-bonding the bonding wire to the ball.Type: ApplicationFiled: September 14, 2020Publication date: December 31, 2020Inventor: Shizuki Nakajima
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Patent number: 10804238Abstract: A method for manufacturing a semiconductor device includes (i) a step of preparing a first semiconductor chip having a first electrode pad thereon and a second semiconductor chip having a second electrode pad thereon and larger in thickness than the first semiconductor chip, the second electrode pad being larger in size than the first electrode pad, (ii) a step of mounting the first semiconductor chip and the second semiconductor chip on the same planarized surface of a substrate having a uniform thickness, (iii) a step of bonding a ball formed by heating and melting a bonding wire to the second electrode pad, (iv) a step of first-bonding the bonding wire to the first electrode pad, and (v) a step of second-bonding the bonding wire to the ball.Type: GrantFiled: February 21, 2018Date of Patent: October 13, 2020Assignee: MURATA MANUFACTURING CO., LTD.Inventor: Shizuki Nakajima
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Patent number: 10476454Abstract: A power amplifier module includes a first current source that outputs a first current corresponding to a level control voltage for controlling a signal level of an amplified signal, a second current source that outputs a second current corresponding to the level control voltage, a first transistor in which an input signal and a first bias current are supplied to a base and an emitter is grounded, a second transistor in which an emitter is connected to a collector of the first transistor, the second current is supplied to a base, and a first amplified signal obtained by amplifying the input signal is output from a collector, and a third transistor in which the first current is supplied to a collector, a bias control current or voltage is supplied to a base, and the first bias current is supplied from an emitter to the base of the first transistor.Type: GrantFiled: February 20, 2019Date of Patent: November 12, 2019Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Shota Ishihara, Seiko Ono, Yusuke Shimamune, Fuminori Morisawa, Shizuki Nakajima, Yuri Honda, Kazuhiro Koshio, Masato Sato
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Publication number: 20190181816Abstract: A power amplifier module includes a first current source that outputs a first current corresponding to a level control voltage for controlling a signal level of an amplified signal, a second current source that outputs a second current corresponding to the level control voltage, a first transistor in which an input signal and a first bias current are supplied to a base and an emitter is grounded, a second transistor in which an emitter is connected to a collector of the first transistor, the second current is supplied to a base, and a first amplified signal obtained by amplifying the input signal is output from a collector, and a third transistor in which the first current is supplied to a collector, a bias control current or voltage is supplied to a base, and the first bias current is supplied from an emitter to the base of the first transistor.Type: ApplicationFiled: February 20, 2019Publication date: June 13, 2019Inventors: Shota ISHIHARA, Seiko ONO, Yusuke SHIMAMUNE, Fuminori MORISAWA, Shizuki NAKAJIMA, Yuri HONDA, Kazuhiro KOSHIO, Masato SATO
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Patent number: 10256778Abstract: A power amplifier module includes a first current source that outputs a first current corresponding to a level control voltage for controlling a signal level of an amplified signal, a second current source that outputs a second current corresponding to the level control voltage, a first transistor in which an input signal and a first bias current are supplied to a base and an emitter is grounded, a second transistor in which an emitter is connected to a collector of the first transistor, the second current is supplied to a base, and a first amplified signal obtained by amplifying the input signal is output from a collector, and a third transistor in which the first current is supplied to a collector, a bias control current or voltage is supplied to a base, and the first bias current is supplied from an emitter to the base of the first transistor.Type: GrantFiled: June 20, 2018Date of Patent: April 9, 2019Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Shota Ishihara, Seiko Ono, Yusuke Shimamune, Fuminori Morisawa, Shizuki Nakajima, Yuri Honda, Kazuhiro Koshio, Masato Sato
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Publication number: 20180302045Abstract: A power amplifier module includes a first current source that outputs a first current corresponding to a level control voltage for controlling a signal level of an amplified signal, a second current source that outputs a second current corresponding to the level control voltage, a first transistor in which an input signal and a first bias current are supplied to a base and an emitter is grounded, a second transistor in which an emitter is connected to a collector of the first transistor, the second current is supplied to a base, and a first amplified signal obtained by amplifying the input signal is output from a collector, and a third transistor in which the first current is supplied to a collector, a bias control current or voltage is supplied to a base, and the first bias current is supplied from an emitter to the base of the first transistor.Type: ApplicationFiled: June 20, 2018Publication date: October 18, 2018Inventors: Shota ISHIHARA, Seiko ONO, Yusuke SHIMAMUNE, Fuminori MORISAWA, Shizuki NAKAJIMA, Yuri HONDA, Kazuhiro KOSHIO, Masato SATO
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Publication number: 20180240771Abstract: A method for manufacturing a semiconductor device includes (i) a step of preparing a first semiconductor chip having a first electrode pad thereon and a second semiconductor chip having a second electrode pad thereon and larger in thickness than the first semiconductor chip, the second electrode pad being larger in size than the first electrode pad, (ii) a step of mounting the first semiconductor chip and the second semiconductor chip on the same planarized surface of a substrate having a uniform thickness, (iii) a step of bonding a ball formed by heating and melting a bonding wire to the second electrode pad, (iv) a step of first-bonding the bonding wire to the first electrode pad, and (v) a step of second-bonding the bonding wire to the ball.Type: ApplicationFiled: February 21, 2018Publication date: August 23, 2018Inventor: Shizuki Nakajima
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Patent number: 10044330Abstract: A power amplifier module includes a first current source that outputs a first current corresponding to a level control voltage for controlling a signal level of an amplified signal, a second current source that outputs a second current corresponding to the level control voltage, a first transistor in which an input signal and a first bias current are supplied to a base and an emitter is grounded, a second transistor in which an emitter is connected to a collector of the first transistor, the second current is supplied to a base, and a first amplified signal obtained by amplifying the input signal is output from a collector, and a third transistor in which the first current is supplied to a collector, a bias control current or voltage is supplied to a base, and the first bias current is supplied from an emitter to the base of the first transistor.Type: GrantFiled: September 20, 2017Date of Patent: August 7, 2018Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Shota Ishihara, Seiko Ono, Yusuke Shimamune, Fuminori Morisawa, Shizuki Nakajima, Yuri Honda, Kazuhiro Koshio, Masato Sato
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Publication number: 20180083581Abstract: A power amplifier module includes a first current source that outputs a first current corresponding to a level control voltage for controlling a signal level of an amplified signal, a second current source that outputs a second current corresponding to the level control voltage, a first transistor in which an input signal and a first bias current are supplied to a base and an emitter is grounded, a second transistor in which an emitter is connected to a collector of the first transistor, the second current is supplied to a base, and a first amplified signal obtained by amplifying the input signal is output from a collector, and a third transistor in which the first current is supplied to a collector, a bias control current or voltage is supplied to a base, and the first bias current is supplied from an emitter to the base of the first transistor.Type: ApplicationFiled: September 20, 2017Publication date: March 22, 2018Inventors: Shota ISHIHARA, Seiko ONO, Yusuke SHIMAMUNE, Fuminori MORISAWA, Shizuki NAKAJIMA, Yuri HONDA, Kazuhiro KOSHIO, Masato SATO
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Patent number: 8742499Abstract: In a semiconductor chip in which LDMOSFET elements for power amplifier circuits used for a power amplifier module are formed, a source bump electrode is disposed on an LDMOSFET formation region in which a plurality of source regions, a plurality of drain regions and a plurality of gate electrodes for the LDMOSFET elements are formed. The source bump electrode is formed on a source pad mainly made of aluminum via a source conductor layer which is thicker than the source pad and mainly made of copper. No resin film is interposed between the source bump electrode and the source conductor layer.Type: GrantFiled: October 29, 2009Date of Patent: June 3, 2014Assignee: Murata Manufacturing Co., Ltd.Inventors: Shizuki Nakajima, Hiroyuki Nagai, Yuji Shirai, Hirokazu Nakajima, Chushiro Kusano, Yu Hasegawa, Chiko Yorita, Yasuo Osone
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Publication number: 20100109052Abstract: In a semiconductor chip in which LDMOSFET elements for power amplifier circuits used for a power amplifier module are formed, a source bump electrode is disposed on an LDMOSFET formation region in which a plurality of source regions, a plurality of drain regions and a plurality of gate electrodes for the LDMOSFET elements are formed. The source bump electrode is formed on a source pad mainly made of aluminum via a source conductor layer which is thicker than the source pad and mainly made of copper. No resin film is interposed between the source bump electrode and the source conductor layer.Type: ApplicationFiled: October 29, 2009Publication date: May 6, 2010Inventors: Shizuki NAKAJIMA, Hiroyuki NAGAI, Yuji SHIRAI, Hirokazu NAKEJIMA, Chushiro KUSANO, Yu HASEGAWA, Chiko YORITA, Yasuo OSONE