Abstract: A distance measuring device according to the present disclosure includes: a light-receiving section including a first light-receiving pixel and a second light-receiving pixel that are configured to detect light, and a light-shielded pixel that is light-shielded, the first light-receiving pixel, the light-shielded pixel, and the second light-receiving pixel being disposed in a first direction in this order; and a processor that is configured to measure a distance to a measurement object on the basis of a detection result in the first light-receiving pixel and a detection result in the second light-receiving pixel.

Abstract: A method for manufacturing a semiconductor device includes: forming a trimming element inside or over a semiconductor substrate; forming an insulating film on the trimming element; forming, on the insulating film, a first wiring layer connected to one end of the trimming element via a first contact region penetrating the insulating film; forming, on the insulating film, a second wiring layer connected to another end of the trimming element via a second contact region penetrating the insulating film; trimming the trimming element; and examining an insulated state between the semiconductor substrate and either the first wiring layer or the second wiring layer after the trimming.

Abstract: There is provided an semiconductor device comprising: a main element having an upper-surface electrode; a first proximal wiring line connected to the upper-surface electrode; and a first sense wiring line that transmits potential at the first sense position on the upper-surface electrode, wherein the first proximal wiring line is connected to the first proximal position on the upper-surface electrode, and on the upper-surface electrode, a first inter-wiring line distance that is from the first sense position to the first proximal position is different from a half of a maximum distance that is from the first proximal position to an end of the upper-surface electrode.

Abstract: A radio frequency module includes: a first mounting board having a first principal surface and a second principal surface; a second mounting board having a third principal surface facing the second principal surface and a fourth principal surface; a transmission filter having a first mounting surface facing the second principal surface and a first top surface; and a reception filter having a second mounting surface facing the third principal surface and a second top surface; wherein the transmission and reception filters overlap at least partially in a plan view of the first and second mounting boards, an output terminal of the transmission filter is arranged on the first top surface, an input terminal of the reception filter is arranged on the second top surface, and the output and input terminals are connected by a conductive member not routed through the first mounting board or the second mounting board.

Abstract: Provided is a driver circuit that controls an output unit that switches whether or not to supply a current to an output line, in accordance with a potential difference between a first control signal to be input and a voltage of the output line. The driver circuit comprises a control line that transmits the first control signal to the output unit; a low potential line to which a predetermined reference potential is applied; a first connection switching unit that switches whether or not to connect the control line and the low potential line, in accordance with a second control signal; and a cutoff unit that is provided in series with the first connection switching unit between the control line and the low potential line and cuts off the control line and the low potential line based on a potential of the low potential line.

Abstract: A state output circuit that outputs a state signal indicating a state of a power supply apparatus, including: a state output terminal that outputs the state signal; a reference potential line to which a reference potential is applied; a first pull-up terminal to which a first pull-up potential is applied, wherein the first pull-up potential is a potential higher than the reference potential; a connection switch unit that is provided between the state output terminal and the reference potential line, and switches whether to connect the state output terminal to the reference potential line or not, in accordance with the state of the power supply apparatus; a first protection resistor provided between the connection switch unit and the state output terminal; and a pull-up unit that pulls up a first connection line between the first protection resistor and the connection switch unit up to the first pull-up potential.

Abstract: A semiconductor device includes a power semiconductor switch; a logic circuit connected to an input terminal; an overheat detection circuit that outputs to the logic circuit an overheat detection signal when a temperature of the power semiconductor switch exceeds an overheat detection threshold; and an overcurrent detection circuit that monitors a current that flows through the power semiconductor switch and that outputs to the logic circuit and to the overheat detection circuit an overcurrent detection signal when the current that flows through the power semiconductor switch exceeds a prescribed threshold, wherein in the overheat detection circuit, the overheat detection threshold values is changed from a first threshold value to a second threshold value that is lower than the first threshold value when the overheat detection circuit receives the overcurrent detection signal from the overcurrent detection circuit.

Abstract: A semiconductor device, including a power supply terminal, an output terminal, a ground terminal, an N-channel main MOSFET connected between the power supply terminal and the output terminal, a drive circuit which operates to drive the main MOSFET, using a potential difference, between the power supply terminal and an internal ground, as a power supply thereof, an internal ground generation circuit which is provided between the power supply terminal and the ground terminal and which generates the internal ground, an N-channel first MOSFET provided between an output terminal of the internal ground generation circuit and the ground terminal, and a low voltage detection circuit which is provided between the power supply terminal and the ground terminal, and which turns on the first MOSFET upon detecting that a voltage between the power supply terminal and the ground terminal drops below a prescribed voltage.

Abstract: It is possible to easily reproduce and edit image data that is a moving image obtained by capturing an image of a non-central projection method, in which distortion correction and blur correction are reflected. For this purpose, an information processing apparatus includes: a distortion correction processing unit that performs distortion correction processing for converting image data as a moving image acquired by capturing an image of a non-central projection method into an image of a central projection method; and a blur correction processing unit that performs blur correction processing of reducing the image blur generated in the image data using posture data of an imaging apparatus for image data that has been subjected to the distortion correction processing. In other words, the blur correction is performed after the distortion correction.

Abstract: Information on posture data that can be used for processing on a frame basis can be acquired for moving image data to be captured. For the purpose, in an imaging apparatus including an imaging unit that captures an image by an optical system to generate image data, a posture data generation unit that generates posture data of a casing including the imaging unit at a timing corresponding to the image data, a notification unit that performs notification for correlating the image data with the posture data on the basis of a trigger, and a detector that detects the notification by the notification unit are provided.

Abstract: A method for manufacturing a semiconductor device includes: forming a trimming element inside or over a semiconductor substrate; forming an insulating film on the trimming element; forming, on the insulating film, a first wiring layer connected to one end of the trimming element via a first contact region penetrating the insulating film; forming, on the insulating film, a second wiring layer connected to another end of the trimming element via a second contact region penetrating the insulating film; trimming the trimming element; and examining an insulated state between the semiconductor substrate and either the first wiring layer or the second wiring layer after the trimming.

Abstract: A semiconductor device, including a power supply terminal, an output terminal, a ground terminal, an N-channel main MOSFET connected between the power supply terminal and the output terminal, a drive circuit which operates to drive the main MOSFET, using a potential difference, between the power supply terminal and an internal ground, as a power supply thereof, an internal ground generation circuit which is provided between the power supply terminal and the ground terminal and which generates the internal ground, an N-channel first MOSFET provided between an output terminal of the internal ground generation circuit and the ground terminal, and a low voltage detection circuit which is provided between the power supply terminal and the ground terminal, and which turns on the first MOSFET upon detecting that a voltage between the power supply terminal and the ground terminal drops below a prescribed voltage.

Abstract: A semiconductor device having a power source terminal, a ground terminal, an input terminal, an output terminal and a status output terminal. The semiconductor device includes a power semiconductor switch connected between the power source terminal and the output terminal, a logic circuit connected to the power semiconductor switch, and a ground terminal opening detection circuit connected to the ground terminal and the status output terminal. The logic circuit is configured to generate, according to a signal inputted to the input terminal, an output logic signal for turning on or off the power semiconductor switch. The ground terminal opening detection circuit is configured to detect a state in which the ground terminal is opened, based on a rise in a potential of the ground terminal, and to output, via the status output terminal, a detection signal in response to the detection of the state.

Abstract: A semiconductor device includes a main power semiconductor switching element, a current sense semiconductor switching element and a current sense semiconductor switching element protection circuit. The main power semiconductor switching element drives a load by switching. The current sense semiconductor switching element detects current flowing in the main power semiconductor switching element. The current sense semiconductor switching element protection circuit is provided between a gate of the main power semiconductor switching element and a gate of the current sense semiconductor switching element so as to protect the gate of the current sense semiconductor switching element at a reference potential different from that of the gate of the main power semiconductor switching element.

Abstract: A state output circuit that outputs a state signal indicating a state of a power supply apparatus, including: a state output terminal that outputs the state signal; a reference potential line to which a reference potential is applied; a first pull-up terminal to which a first pull-up potential is applied, wherein the first pull-up potential is a potential higher than the reference potential; a connection switch unit that is provided between the state output terminal and the reference potential line, and switches whether to connect the state output terminal to the reference potential line or not, in accordance with the state of the power supply apparatus; a first protection resistor provided between the connection switch unit and the state output terminal; and a pull-up unit that pulls up a first connection line between the first protection resistor and the connection switch unit up to the first pull-up potential.

Abstract: Provided is a driver circuit that controls an output unit that switches whether or not to supply a current to an output line, in accordance with a potential difference between a first control signal to be input and a voltage of the output line. The driver circuit comprises a control line that transmits the first control signal to the output unit; a low potential line to which a predetermined reference potential is applied; a first connection switching unit that switches whether or not to connect the control line and the low potential line, in accordance with a second control signal; and a cutoff unit that is provided in series with the first connection switching unit between the control line and the low potential line and cuts off the control line and the low potential line based on a potential of the low potential line.

Abstract: A semiconductor device having a power source terminal, a ground terminal, an input terminal, an output terminal and a status output terminal. The semiconductor device includes a power semiconductor switch connected between the power source terminal and the output terminal, a logic circuit connected to the power semiconductor switch, and a ground terminal opening detection circuit connected to the ground terminal and the status output terminal. The logic circuit is configured to generate, according to a signal inputted to the input terminal, an output logic signal for turning on or off the power semiconductor switch. The ground terminal opening detection circuit is configured to detect a state in which the ground terminal is opened, based on a rise in a potential of the ground terminal, and to output, via the status output terminal, a detection signal in response to the detection of the state.

Abstract: A semiconductor device includes a power semiconductor switch; a logic circuit connected to an input terminal; an overheat detection circuit that outputs to the logic circuit an overheat detection signal when a temperature of the power semiconductor switch exceeds an overheat detection threshold; and an overcurrent detection circuit that monitors a current that flows through the power semiconductor switch and that outputs to the logic circuit and to the overheat detection circuit an overcurrent detection signal when the current that flows through the power semiconductor switch exceeds a prescribed threshold, wherein in the overheat detection circuit, the overheat detection threshold values is changed from a first threshold value to a second threshold value that is lower than the first threshold value when the overheat detection circuit receives the overcurrent detection signal from the overcurrent detection circuit.

Abstract: Information on posture data that can be used for processing on a frame basis can be acquired for moving image data to be captured. For the purpose, in an imaging apparatus including an imaging unit that captures an image by an optical system to generate image data, a posture data generation unit that generates posture data of a casing including the imaging unit at a timing corresponding to the image data, a notification unit that performs notification for correlating the image data with the posture data on the basis of a trigger, and a detector that detects the notification by the notification unit are provided.

Abstract: A semiconductor device includes a power semiconductor switching element, a comparator circuit, a filter circuit and an erroneous-detection prevention circuit. The comparator circuit compares a value of an output voltage of the switching element with a threshold and outputs a comparison result as a determination signal. The filter circuit outputs the determination signal to the control circuit after a delay time required for the output voltage of the switching element to reach a predetermined voltage value for determining that the switching element is in a normal ON state after the switching element is turned on. The erroneous-detection prevention circuit changes a turn-on time of the switching element, the delay time, or a voltage value of the determination signal when a voltage of the power supply drops in a case where the switching element is normally turned on.