Abstract: A semiconductor device includes a main power semiconductor switching element, a current sense semiconductor switching element and a current sense semiconductor switching element protection circuit. The main power semiconductor switching element drives a load by switching. The current sense semiconductor switching element detects current flowing in the main power semiconductor switching element. The current sense semiconductor switching element protection circuit is provided between a gate of the main power semiconductor switching element and a gate of the current sense semiconductor switching element so as to protect the gate of the current sense semiconductor switching element at a reference potential different from that of the gate of the main power semiconductor switching element.

Abstract: A semiconductor device includes a power semiconductor switching element, a comparator circuit, a filter circuit and an erroneous-detection prevention circuit. The comparator circuit compares a value of an output voltage of the switching element with a threshold and outputs a comparison result as a determination signal. The filter circuit outputs the determination signal to the control circuit after a delay time required for the output voltage of the switching element to reach a predetermined voltage value for determining that the switching element is in a normal ON state after the switching element is turned on. The erroneous-detection prevention circuit changes a turn-on time of the switching element, the delay time, or a voltage value of the determination signal when a voltage of the power supply drops in a case where the switching element is normally turned on.

Abstract: A charge pump circuit in a high-side intelligent power switch includes a switching unit between an oscillating unit and a charge-up unit. When the high-side IPS serving as a load driving circuit is in a standby state, a MOSFET switches ON and the switching unit blocks the transmission of signals output from the oscillating unit to the charge-up unit. This prevents a power supply voltage, which can potentially fluctuate, from being applied to capacitors of the charge-up unit via body diodes of inverter circuits in the switching unit while the high-side IPS is in the standby state, thereby suitably protecting the capacitors.

Abstract: A charge pump circuit in a high-side intelligent power switch includes a switching unit between an oscillating unit and a charge-up unit. When the high-side IPS serving as a load driving circuit is in a standby state, a MOSFET switches ON and the switching unit blocks the transmission of signals output from the oscillating unit to the charge-up unit. This prevents a power supply voltage, which can potentially fluctuate, from being applied to capacitors of the charge-up unit via body diodes of inverter circuits in the switching unit while the high-side IPS is in the standby state, thereby suitably protecting the capacitors.

Abstract: In solder powder having an average particle size of 5 ?m or less and constituted by a center core and a covering layer covering the center core, wherein the center core consists of an intermetallic compound of silver and tin, or silver and the intermetallic compound of silver and tin, the covering layer consists of tin, and an intermediate layer which consists of an intermetallic compound of copper and tin is interposed between the center core and the covering layer so that at least a part of the center core is covered thereby.

Abstract: In solder powder having an average particle size of 5 ?m or less and constituted by a center core and a covering layer covering the center core, wherein the center core consists of an intermetallic compound of silver and tin, or silver and the intermetallic compound of silver and tin, the covering layer consists of tin, and an intermediate layer which consists of an intermetallic compound of copper and tin is interposed between the center core and the covering layer so that at least a part of the center core is covered thereby.

Abstract: In this method of bonding a part to a substrate using a solder paste, the solder paste is mounted or applied between a metallization layer formed on the substrate and a metallization layer formed on the part, and the part is bonded to the substrate by performing a reflow process in a non-oxidizing atmosphere to bond the substrate and the part. The metallization layer formed on the surface of the substrate is planar and includes a metallization layer main portion that has an area smaller than that of the metallization layer of the part and a solder guide portion that protrudes from a periphery of the metallization layer main portion.