Abstract: A medical information processing device according to an embodiment includes processing circuitry configured to acquire a plurality of X-ray images including a device inserted into a body of a subject, suppress movement of a characteristic portion characterized in a shape that is positioned distant from a distal end of the device among the X-ray images, and output the X-ray images in which movement of the characteristic portion is suppressed.

Abstract: A medical image processing apparatus according to an embodiment includes processing circuitry configured: to acquire a plurality of time series medical images; to determine a feature point in each of the plurality of medical images to calculate moving amounts of the determined feature point between the plurality of medical images; to set a weight coefficient with respect to each of the plurality of medical images, on the basis of the calculated moving amounts; and to perform an image processing process by using the plurality of medical images, on the basis of the weight coefficients.

Abstract: A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.

Abstract: An X-ray diagnostic apparatus according to an embodiment includes a storage, an imaging equipment, a display, an input interface, and processing circuitry. The storage memorizes medical images. The imaging equipment includes an X-ray tube configured to emit X-rays toward a subject and a detector configured to detect X-rays emitted from the X-ray tube. The display displays a plurality of medical images including X-ray images captured by the imaging equipment. The input interface accepts an operation instructing storage of a medical image displayed on the display. The processing circuitry identifies a medical image associated with a last-executed, targeted operation, among targeted operations related to any of medical images displayed on the display, and, when the input interface has accepted an operation instructing storage of a medical image displayed on the display, causes the storage to memorize the identified medical image.

Abstract: A medical information processing apparatus according to an embodiment includes processing circuitry. The processing circuitry is configured to obtain an image capturing a space in which a manipulation is being performed on an examined subject and non-image information related to at least one of the manipulation, the examined subject, or the space. Also, the processing circuitry is configured to detect a situation having a high possibility for an occurrence of an abnormality in the space, on the basis of the obtained image, the obtained non-image information, and first correspondence information. The first correspondence information indicates a correspondence relationship between two or more images capturing the space, non-image information, and abnormalities having a high possibility of occurring in the space.

Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [?1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [?1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

Abstract: A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.

Abstract: A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source material having a flowability index of not less than 70 and not more than 100; and sublimating the silicon carbide source material by heating the silicon carbide source material.

Abstract: A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.

Abstract: A medical image-processing apparatus according to an embodiment includes processing circuitry configured to determine a position of a feature point of a device in a first X-ray image, and generate a superimposed image in which a 3D model expressing the device is superimposed on the first X-ray image or a second X-ray image that is acquired later than the first X-ray image. The processing circuitry is configured to superimpose the 3D model on the first X-ray image or the second X-ray image at a position based on the position of the feature point.

Abstract: A medical image processing apparatus according to an embodiment includes processing circuitry configured: to acquire a plurality of time series medical images: to determine a feature point in each of the plurality of medical images to calculate moving amounts of the determined feature point between the plurality of medical images; to set a weight coefficient with respect to each of the plurality of medical images, on the basis of the calculated moving amounts; and to perform an image processing process by using the plurality of medical images, on the basis of the weight coefficients.

Abstract: A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source material having a flowability index of not less than 70 and not more than 100; and sublimating the silicon carbide source material by heating the silicon carbide source material.

Abstract: A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source material having a flowability index of not less than 70 and not more than 100; and sublimating the silicon carbide source material by heating the silicon carbide source material.

Abstract: A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source material having a flowability index of not less than 70 and not more than 100; and sublimating the silicon carbide source material by heating the silicon carbide source material.

Abstract: There is provided a vehicular structure including (i) a vehicular panel member configured by resin including reinforcing fibers, and (ii) a joined portion of a vehicle body that supports, all the way around, a peripheral portion of a predetermined area of the panel member and to which the peripheral portion of the predetermined area is joined, wherein the panel member has a bulging shape where both front and back surfaces of the panel member bulge out such that the thickness of the panel member gradually becomes thicker from a peripheral end portion to a central portion within the predetermined area supported all the way around by the joined portion

Abstract: There is provided a vehicular structure including (i) a vehicular panel member configured by resin including reinforcing fibers, and (ii) a joined portion of a vehicle body that supports, all the way around, a peripheral portion of a predetermined area of the panel member and to which the peripheral portion of the predetermined area is joined, wherein the panel member has a bulging shape where both front and back surfaces of the panel member bulge out such that the thickness of the panel member gradually becomes thicker from a peripheral end portion to a central portion within the predetermined area supported all the way around by the joined portion

Abstract: A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.

Abstract: A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source material having a flowability index of not less than 70 and not more than 100; and sublimating the silicon carbide source material by heating the silicon carbide source material.

Abstract: A crucible having a tubular inner surface is prepared. A source material is arranged so as to make contact with the inner surface, and a seed crystal is arranged in the crucible so as to face the source material. A silicon carbide single crystal grows on the seed crystal by sublimation of the source material. The inner surface is formed of a first region surrounding the source material and a second region other than the first region. In the growing a silicon carbide single crystal, an amount of heat per unit area in the first region is smaller than an amount of heat per unit area in the second region.

Abstract: After growing a silicon carbide single crystal, silicon carbide single crystal is cooled. The step of growing silicon carbide single crystal includes a step of growing silicon carbide single crystal while maintaining the temperature of a second main surface of a base opposite to a first main surface to be lower than the temperature of a surface of silicon carbide single crystal facing a silicon carbide source material. In the step of cooling silicon carbide single crystal, silicon carbide single crystal is cooled while maintaining the temperature of second main surface of base to be not less than the temperature of surface of silicon carbide single crystal.