Patents by Inventor Shoichi Fujii

Shoichi Fujii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200303461
    Abstract: A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction, a variable resistance film provided between these, a third wiring extending in a third direction, a first semiconductor section connected to the first wiring and the third wiring, a first gate electrode facing the first semiconductor section, a contact connected to the second wiring, a fourth wiring further from the substrate than the contact is, a second semiconductor section connected to the contact and the fourth wiring, and a second gate electrode facing the second semiconductor section. The first semiconductor section, the first gate electrode, the second semiconductor section, and the second gate electrode respectively include a portion included in a cross section extending in the second direction and the third direction.
    Type: Application
    Filed: September 9, 2019
    Publication date: September 24, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Shoichi KABUYANAGI, Shosuke FUJII, Masumi SAITOH
  • Patent number: 10784312
    Abstract: A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction, a variable resistance film provided between these, a third wiring extending in a third direction, a first semiconductor section connected to the first wiring and the third wiring, a first gate electrode facing the first semiconductor section, a contact connected to the second wiring, a fourth wiring further from the substrate than the contact is, a second semiconductor section connected to the contact and the fourth wiring, and a second gate electrode facing the second semiconductor section. The first semiconductor section, the first gate electrode, the second semiconductor section, and the second gate electrode respectively include a portion included in a cross section extending in the second direction and the third direction.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: September 22, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Shoichi Kabuyanagi, Shosuke Fujii, Masumi Saitoh
  • Patent number: 6336316
    Abstract: A heat engine is provided that can improve thermal efficiency of a gas turbine . When gas such as air enters a compressor C101 of a gas turbine apparatus 100 (state 1), the gas becomes high-temperature gas by a combustor B102 (state 3) and moves toward a turbine T103. Another turbine T104 is placed at the back portion of the turbine T103 where air of state 3 enters, the gas enters a first heat exchanger Hx 105 (state 4) and is supplied to a compressor C109 (state 5). Thereafter, the supplied gas is discharged from a compressor C112 (state 12) through a heat exchanger Hx106 of an intercooling portion 151, a compressor C110, a heat exchanger Hx107, a compressor C111, and a heat exchanger Hx108 (states 6 to 11).
    Type: Grant
    Filed: September 18, 2000
    Date of Patent: January 8, 2002
    Assignee: Japan Science and Technology Corp.
    Inventors: Shoichi Fujii, Yoshiharu Tsujikawa, Kenichi Kaneko
  • Patent number: D312602
    Type: Grant
    Filed: August 29, 1988
    Date of Patent: December 4, 1990
    Assignee: Sumitomo Rubber Industries, Ltd.
    Inventor: Shoichi Fujii
  • Patent number: D336067
    Type: Grant
    Filed: November 21, 1991
    Date of Patent: June 1, 1993
    Assignee: Sumitomo Rubber Industries, Ltd.
    Inventor: Shoichi Fujii
  • Patent number: D336276
    Type: Grant
    Filed: November 13, 1991
    Date of Patent: June 8, 1993
    Assignee: Sumitomo Rubber Industries, Ltd.
    Inventor: Shoichi Fujii