Abstract: In the present application, a power semiconductor device includes a first-conductive-type first base region having a first principal surface and a second principal surface opposite to the first principal surface, a second-conductive-type second base region disposed on the first principal surface and at least three groove parts parallel to each other disposed from a surface of the second base region. The device further includes insulating films covering inner walls of the respective groove parts, conductive trench gates filled on the insulating films, a first-conductive-type emitter region disposed in the second base region, and a second-conductive-type collector region disposed on the second principal surface of the first base region. The trench gates embedded in the first groove part and the third groove part are electrically connected to the gate electrode, and the trench gate embedded in the second groove part is electrically connected to the emitter electrode.

Abstract: In the present application, a power semiconductor device includes a first-conductive-type first base region having a first principal surface and a second principal surface opposite to the first principal surface, a second-conductive-type second base region disposed on the first principal surface and at least three groove parts parallel to each other disposed from a surface of the second base region. The device further includes insulating films covering inner walls of the respective groove parts, conductive trench gates filled on the insulating films, a first-conductive-type emitter region disposed in the second base region, and a second-conductive-type collector region disposed on the second principal surface of the first base region. The trench gates embedded in the first groove part and the third groove part are electrically connected to the gate electrode, and the trench gate embedded in the second groove part is electrically connected to the emitter electrode.

Abstract: A signal transmission insulating device includes: a first coil; a second coil opposing the first coil to form a transformer together with the first coil; a first insulating film provided between the opposing first coil and second coil and made of a first dielectric material; a second insulating film surrounding the first coil and made of a second dielectric material having a lower resistivity or a higher permittivity than the first dielectric material; and a third insulating film surrounding the second coil and made of a third dielectric material having a lower resistivity or a higher permittivity than the first dielectric material.

Abstract: In the present application, a power semiconductor device includes a first-conductive-type first base region having a first principal surface and a second principal surface opposite to the first principal surface, a second-conductive-type second base region disposed on the first principal surface and at least three groove parts parallel to each other disposed from a surface of the second base region. The device further includes insulating films covering inner walls of the respective groove parts, conductive trench gates filled on the insulating films, a first-conductive-type emitter region disposed in the second base region, and a second-conductive-type collector region disposed on the second principal surface of the first base region. The trench gates embedded in the first groove part and the third groove part are electrically connected to the gate electrode, and the trench gate embedded in the second groove part is electrically connected to the emitter electrode.

Abstract: A first circuit outputs transmission signals that change between “H” and “L” in a period of an oscillation signal in addition to a transition time of an input signal when it changes to “H” or “L”. Control protection elements invalidate induced voltage signals obtained from transformers for first and second mask periods in response to transmission signals. Buffer circuits and Schmitt circuits generate a first signal and a second signal, each indicating “H” for a relatively long period, on the basis of “H” of the induced voltage signals. A control circuit invalidates the first signal and the second signal when both the first signal and the second signal indicate “H”.

Abstract: A power semiconductor device driving circuit has a capacitor whose one end is connected with a first or a second main electrode of a power semiconductor device, a first switch for charging the capacitor and a control electrode of the power semiconductor device with electric charges, and a second switch for discharging electric charges; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through different resistors, electric charges are discharged from the control electrode and the capacitor through one and the same resistor when the second switch turns on; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through one and the same resistor, electric charges are discharged from the control electrode and the capacitor through different resistors when the second switch turns on.

Abstract: A first circuit outputs transmission signals that change between “H” and “L” in a period of an oscillation signal in addition to a transition time of an input signal when it changes to “H” or “L”. Control protection elements invalidate induced voltage signals obtained from transformers for first and second mask periods in response to transmission signals. Buffer circuits and Schmitt circuits generate a first signal and a second signal, each indicating “H” for a relatively long period, on the basis of “H” of the induced voltage signals. A control circuit invalidates the first signal and the second signal when both the first signal and the second signal indicate “H”.

Abstract: A signal transmission insulating device includes: a first coil; a second coil opposing the first coil to form a transformer together with the first coil; a first insulating film provided between the opposing first coil and second coil and made of a first dielectric material; a second insulating film surrounding the first coil and made of a second dielectric material having a lower resistivity or a higher permittivity than the first dielectric material; and a third insulating film surrounding the second coil and made of a third dielectric material having a lower resistivity or a higher permittivity than the first dielectric material.

Abstract: A power semiconductor device driving circuit has a capacitor whose one end is connected with a first or a second main electrode of a power semiconductor device, a first switch for charging the capacitor and a control electrode of the power semiconductor device with electric charges, and a second switch for discharging electric charges; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through different resistors, electric charges are discharged from the control electrode and the capacitor through one and the same resistor when the second switch turns on; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through one and the same resistor, electric charges are discharged from the control electrode and the capacitor through different resistors when the second switch turns on.

Abstract: In the present application, a power semiconductor device includes a first-conductive-type first base region having a first principal surface and a second principal surface opposite to the first principal surface, a second-conductive-type second base region disposed on the first principal surface and at least three groove parts parallel to each other disposed from a surface of the second base region. The device further includes insulating films covering inner walls of the respective groove parts, conductive trench gates filled on the insulating films, a first-conductive-type emitter region disposed in the second base region, and a second-conductive-type collector region disposed on the second principal surface of the first base region. The trench gates embedded in the first groove part and the third groove part are electrically connected to the gate electrode, and the trench gate embedded in the second groove part is electrically connected to the emitter electrode.

Abstract: A power device control circuit enters a gate driving signal into a gate terminal of a power device. The power device control circuit includes: a control signal input circuit that receives a power device control signal for control of the power device; a driving system control circuit connected to the control signal input circuit; a driving circuit with a plurality of driving systems, the driving circuit driving the power device in response to a driving circuit control signal received from the driving system control circuit; and a timer circuit that makes switching between the driving systems in response to the driving circuit control signal after elapse of a given period of time from receipt of a predetermined signal, specifically the power device control signal, thereby changing the driving power of the driving system control circuit to drive the power device.

Abstract: A power module includes a current sensing circuit in which a transistor includes an emitter connected to a sense emitter of a current sense element of an IGBT and a base connected to ground, a current sensing resistor including one end thereof connected to a collector of the transistor and the other end thereof connected to a common connection portion. The power module detects, as a current sensing voltage, a potential difference generated by the current sensing resistor based on the common connection portion as a reference, compares the current sensing voltage with a predetermined threshold voltage, and determines whether or not an overcurrent flows through the IGBT according to a magnitude relation therebetween.

Abstract: A driving circuit is placed on an IC chip, and which drives a semiconductor switching element. The driving circuit includes: a power supply circuit for receiving a first voltage supplied from a single power supply provided outside the IC chip, generating a second voltage based on the first voltage, and applying the second voltage to a reference terminal of the semiconductor switching element; and a driving part for driving the semiconductor switching element by applying the first voltage or stopping application of the first voltage to a control terminal of the semiconductor switching element in response to an input signal given from outside the IC chip.

Abstract: A power device control circuit enters a gate driving signal into a gate terminal of a power device. The power device control circuit includes: a control signal input circuit that receives a power device control signal for control of the power device; a driving system control circuit connected to the control signal input circuit; a driving circuit with a plurality of driving systems, the driving circuit driving the power device in response to a driving circuit control signal received from the driving system control circuit; and a timer circuit that makes switching between the driving systems in response to the driving circuit control signal after elapse of a given period of time from receipt of a predetermined signal, specifically the power device control signal, thereby changing the driving power of the driving system control circuit to drive the power device.

Abstract: A power module includes a current sensing circuit in which a transistor includes an emitter connected to a sense emitter of a current sense element of an IGBT and a base connected to ground, a current sensing resistor including one end thereof connected to a collector of the transistor and the other end thereof connected to a common connection portion. The power module detects, as a current sensing voltage, a potential difference generated by the current sensing resistor based on the common connection portion as a reference, compares the current sensing voltage with a predetermined threshold voltage, and determines whether or not an overcurrent flows through the IGBT according to a magnitude relation therebetween.

Abstract: A driving circuit is placed on an IC chip, and which drives a semiconductor switching element. The driving circuit includes: a power supply circuit for receiving a first voltage supplied from a single power supply provided outside the IC chip, generating a second voltage based on the first voltage, and applying the second voltage to a reference terminal of the semiconductor switching element; and a driving part for driving the semiconductor switching element by applying the first voltage or stopping application of the first voltage to a control terminal of the semiconductor switching element in response to an input signal given from outside the IC chip.

Abstract: A false signal detection circuit is connected in parallel to a level shift circuit. The false signal detection circuit has the same configuration as those of on-level shift and off-level shift circuits in the level shift circuit, except that an HVMOS is a dummy switching device. Voltage drop developed in a false signal detecting resistor is sent as a false signal indication signal indicating generation of a false signal in the level shift circuit through a NOT gate to a malfunction prevention circuit. In response to the input of the false signal indication signal, the malfunction prevention circuit performs predetermined processing for malfunction prevention.

Abstract: In a level-shift circuit of the high-side section of an HVIC, a switching-on level-shift resistance member includes two resistors, and a switching-off level-shift resistance member includes two resistors. A logic filter set fetches potentials of the both end of the resistor as signals Aon and Bon, and fetches potentials of the both end of the resistor as signals Aoff and Boff. When an output period of the signals Bon and Boff is longer than that of the signals Aon and Aoff, the logic filter set does not output an abnormal signal by judging that a recoverry signal is detected.

Abstract: A reverse level shift circuit that is low in cost and excellent in reliability is provided by employing no Pch-DMOS transistor and forming it together with a level shift circuit on one semiconductor substrate. An input voltage signal (VIN) on high side is converted to a current signal by a voltage-current conversion circuit (CV1) and a current source (CS1). Using a Nch-DMOS transistor (ND1) of common gate construction as a high breakdown voltage resistance, the current signal is then transferred to low side, on which the current signal is converted to a voltage signal by a current source (CS2) and a current-voltage conversion circuit (CV2). Thereby, the signal change of the signal (VIN) using potential (HGND) as a reference potential can be outputted as a signal change of signal (VOUT) that uses potential (GND) as a reference potential.

Abstract: A reverse level shift circuit that is low in cost and excellent in reliability is provided by employing no Pch-DMOS transistor and forming it together with a level shift circuit on one semiconductor substrate. An input voltage signal (VIN) on high side is converted to a current signal by a voltage-current conversion circuit (CV1) and a current source (CS1). Using a Nch-DMOS transistor (ND1) of common gate construction as a high breakdown voltage resistance, the current signal is then transferred to low side, on which the current signal is converted to a voltage signal by a current source (CS2) and a current-voltage conversion circuit (CV2). Thereby, the signal change of the signal (VIN) using potential (HGND) as a reference potential can be outputted as a signal change of signal (VOUT) that uses potential (GND) as a reference potential.