Patents by Inventor Shoichiro Matsuyama

Shoichiro Matsuyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210233794
    Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.
    Type: Application
    Filed: April 16, 2021
    Publication date: July 29, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shoichiro MATSUYAMA, Daiki SATOH, Yasuharu SASAKI, Takashi NISHIJIMA, Jinyoung PARK
  • Publication number: 20210175051
    Abstract: An edge ring that is placed on an electrostatic chuck of a substrate processing apparatus so as to surround a periphery of a substrate is provided. Multiple contact portions are provided on a lower surface of the edge ring, and each of the contact portions is of a ring shape. Each of the contact portions is in line contact with a mounting surface of the electrostatic chuck.
    Type: Application
    Filed: November 25, 2020
    Publication date: June 10, 2021
    Inventor: Shoichiro MATSUYAMA
  • Patent number: 11004717
    Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.
    Type: Grant
    Filed: September 13, 2018
    Date of Patent: May 11, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shoichiro Matsuyama, Daiki Satoh, Yasuharu Sasaki, Takashi Nishijima, Jinyoung Park
  • Publication number: 20210126559
    Abstract: A method of attracting an object to a mounting table is provided. The object is a substrate, an edge ring, or a combination of the substrate and the edge ring. The mounting table is provided with an electrostatic chuck including electrodes. After the object is placed on the electrostatic chuck, n-phase alternating current (AC) voltages (n?2) are applied to the electrodes. Each phase voltage of the n-phase AC voltages has a phase different from each other, and the phase voltage of the n-phase AC voltages is applied based on a self-bias voltage of the object.
    Type: Application
    Filed: October 22, 2020
    Publication date: April 29, 2021
    Inventor: Shoichiro MATSUYAMA
  • Publication number: 20210074522
    Abstract: A plasma processing apparatus includes a processing chamber that performs a plasma processing using plasma; a placing table provided in the processing chamber and including a substrate placing portion and a focus ring placing portion, the focus ring placing portion surrounding the substrate placing portion; a focus ring disposed on the focus ring placing portion; a first electrode and a second electrode both disposed inside the focus ring placing portion; a DC power source configured to apply a first DC voltage to the first electrode and apply a second DC voltage to the second electrode; and a controller configured to control the DC power source such that respective polarities of the first DC voltage and the second DC voltage are independently and periodically switched.
    Type: Application
    Filed: November 19, 2020
    Publication date: March 11, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shoichiro MATSUYAMA, Naoki TAMARU, Yasuharu SASAKI
  • Patent number: 10879050
    Abstract: Disclosed is a plasma processing apparatus including: a placing table including a focus ring placed thereon and an electrode provided therein so as to face the focus ring; and a voltage application unit that applies, to the electrode, voltages having different polarities in cycles or a voltage having a large absolute value in steps, during a plasma processing period.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: December 29, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shoichiro Matsuyama, Naoki Tamaru, Yasuharu Sasaki
  • Publication number: 20200194239
    Abstract: Provided is a mounting stage on which a substrate to be subjected to a plasma process is mounted. The mounting stage includes: an electrostatic chuck configured to attract the substrate and an edge ring disposed around the substrate; and supply holes through which a heat medium is supplied to a space between the electrostatic chuck and the edge ring. A groove is provided in at least one of the edge ring and the mounting stage, and the groove is not in communication with the supply holes.
    Type: Application
    Filed: May 29, 2019
    Publication date: June 18, 2020
    Inventors: Yasuharu SASAKI, Kyo TSUBOI, Tomoya KATO, Shoichiro MATSUYAMA
  • Publication number: 20190088523
    Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.
    Type: Application
    Filed: September 13, 2018
    Publication date: March 21, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shoichiro MATSUYAMA, Daiki SATOH, Yasuharu SASAKI, Takashi NISHIJIMA, Jinyoung PARK
  • Publication number: 20180350565
    Abstract: Disclosed is a plasma processing apparatus including: a placing table including a focus ring placed thereon and an electrode provided therein so as to face the focus ring; and a voltage application unit that applies, to the electrode, voltages having different polarities in cycles or a voltage having a large absolute value in steps, during a plasma processing period.
    Type: Application
    Filed: June 1, 2018
    Publication date: December 6, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shoichiro MATSUYAMA, Naoki TAMARU, Yasuharu SASAKI
  • Patent number: 9390943
    Abstract: A substrate processing apparatus generates an electric field in a processing space between a lower electrode to which a high frequency power is supplied and an upper electrode facing the lower electrode and performs plasma processing on a substrate mounted on the lower electrode by using a plasma generated by the electric field. Distribution of a plasma density in the processing space is controlled by a magnetic field generated by controlling a plurality of electromagnets provided at a top surface of the upper electrode which is provided to be opposite to the processing space.
    Type: Grant
    Filed: February 14, 2013
    Date of Patent: July 12, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kazuya Nagaseki, Etsuji Ito, Akihiro Yokota, Shinji Himori, Shoichiro Matsuyama
  • Patent number: 9230824
    Abstract: Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including O2 gas or N2 gas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including HBr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask.
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: January 5, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Wataru Takayama, Shoichiro Matsuyama, Susumu Nogami, Daisuke Tamura, Kyosuke Hayashi, Jun Kawanobe
  • Publication number: 20150179466
    Abstract: Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including O2 gas or N2 gas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including HBr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask.
    Type: Application
    Filed: December 18, 2014
    Publication date: June 25, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Wataru TAKAYAMA, Shoichiro MATSUYAMA, Susumu NOGAMI, Daisuke TAMURA, Kyosuke HAYASHI, Jun KAWANOBE
  • Patent number: 8920598
    Abstract: There is provided a plasma processing apparatus including a processing chamber 100 configured to perform a plasma process on a wafer W; an upper electrode 105 and a lower electrode 110 arranged to face each other in the processing chamber 100 and configured to form a processing space therebetween; and a high frequency power supply 150 connected with at least one of the upper electrode 105 and the lower electrode 110 and configured to output a high frequency power into the processing chamber 100. The upper electrode 105 includes an upper base 105a made of a dielectric material, and a plurality of fine holes A having a diameter equal to or less than twice a thickness of a sheath are formed in the upper base 105a.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: December 30, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Daisuke Hayashi, Shoichiro Matsuyama, Koichi Murakami
  • Publication number: 20140284308
    Abstract: There are provided a plasma etching method and a plasma etching apparatus, capable of suppressing occurrence of local bias in etching rate and suppressing occurrence of charge-up damage. The plasma etching method of etching a silicon layer of a substrate to be processed using the plasma etching apparatus sets the pressure in a processing chamber to 13.3 Pa or more and applies, to a lower electrode, a first high-frequency power with a first frequency and a second high-frequency power with a second frequency that is lower than the first frequency and is a frequency of 1 MHz or lower.
    Type: Application
    Filed: March 19, 2014
    Publication date: September 25, 2014
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOKYO ELECTRON LIMITED
    Inventors: Shoichiro MATSUYAMA, Akitaka SHIMIZU, Susumu NOGAMI, Kiyohito ITO, Tokuhisa OHIWA, Katsunori YAHASHI
  • Patent number: 8840753
    Abstract: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
    Type: Grant
    Filed: October 13, 2009
    Date of Patent: September 23, 2014
    Assignees: Tokyo Electron Limited, Kabushiki Kaisha Toshiba
    Inventors: Masanobu Honda, Kazuya Nagaseki, Koichiro Inazawa, Shoichiro Matsuyama, Hisataka Hayashi
  • Patent number: 8741098
    Abstract: Disclosed herein is a table 2 for use in a plasma processing system 1 that includes an electrically conductive member serving as a lower electrode 21 for plasma formation, a lower dielectric layer 22 (first dielectric layer) formed on the electrically conductive member so that it covers the center of the upper surface of the electrically conductive member, serving to make a high-frequency electric field to be applied to plasma via a substrate uniform, and an upper dielectric layer 24 (second dielectric layer) having a relative dielectric constant of 100 or more, formed on the electrically conductive member so that it is in contact at least with the edge of the substrate, in order to prevent a high-frequency current that has propagated along the electrically conductive member face from leaking to the outside of the substrate (wafer W).
    Type: Grant
    Filed: August 10, 2007
    Date of Patent: June 3, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Akira Koshiishi, Shinji Himori, Shoichiro Matsuyama
  • Patent number: 8636872
    Abstract: Plasma uniformity can be improved. An upper electrode 105 for use in a parallel plate type plasma processing apparatus includes a base 105a made of a dielectric material; and a conductive layer 110 formed on at least a part of a surface of the base 105a facing a lower electrode 210 provided in the plasma processing apparatus. Further, the conductive layer 110 having a dense and sparse pattern such that the dense and sparse pattern at an outer portion of the surface of the base 105a facing the lower electrode 210 is denser than at an inner portion thereof.
    Type: Grant
    Filed: February 14, 2012
    Date of Patent: January 28, 2014
    Assignee: Tokyo Electron Limited
    Inventor: Shoichiro Matsuyama
  • Patent number: 8295026
    Abstract: In an electrostatic chuck provided inside a processing chamber of a substrate processing apparatus and including a high voltage electrode plate for electrostatically attracting a target substrate, a heater includes a plate-shaped resistor and two electrode plates respectively brought into surface-contact with a front surface and a rear surface of the resistor, and one of the two electrode plates of the heater serves as the high voltage electrode plate for electrostatically attracting the target substrate.
    Type: Grant
    Filed: October 19, 2009
    Date of Patent: October 23, 2012
    Assignee: Tokyo Electron Limited
    Inventor: Shoichiro Matsuyama
  • Patent number: 8293655
    Abstract: In a dry etching method, a silicon substrate is mounted on an electrode arranged in a processing chamber; a plasma is generated by discharging an etching gas in the processing chamber; a radio frequency power for attracting ions from the plasma is supplied to the electrode; and the silicon substrate is etched by the plasma. A pressure inside the processing chamber is set as 1 mTorr to 100 mTorr, and the etching is carried out while satisfying the following equation: yM?2.84*10?3x+0.28, where yM is a power density of the radio frequency power per unit area of the electrode and x is the pressure inside the processing chamber.
    Type: Grant
    Filed: September 11, 2009
    Date of Patent: October 23, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Masanobu Honda, Shoichiro Matsuyama
  • Patent number: 8284538
    Abstract: An electrostatic chuck device includes an electrostatic chuck section, a metal base section, and a dielectric plate. The electrostatic chuck section has a substrate, a main surface of which serves as a mounting surface for a plate-like sample, an electrostatic-adsorption inner electrode built in the substrate, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode. Here, a dielectric plate is fixed to a concave portion formed in the metal base section. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with a conductive adhesive bonding layer interposed therebetween, the volume resistivity of which is 1.0×10?2 ?cm or less.
    Type: Grant
    Filed: August 8, 2007
    Date of Patent: October 9, 2012
    Assignees: Tokyo Electron Limited, Sumitomo Osaka Cement Co., Ltd.
    Inventors: Shinji Himori, Shoichiro Matsuyama, Atsushi Matsuura, Hiroshi Inazumachi, Mamoru Kosakai, Yukio Miura, Keigo Maki