Abstract: An optical scanning device includes a supporting body 2; an optical waveguide composed of a single crystal having electro-optic effect and integrated with the supporting body directly or through a clad layer; a plurality of periodic domain inversion parts formed in the optical waveguide, the periodic domain inversion parts having periods different from each other; and a plurality of electrodes capable of applying voltages on the periodic domain inversion parts, respectively, to generate diffraction gratings in the periodic domain inversion parts, respectively. The clad layer is composed of a material having a refractive index lower than a refractive index of the single crystal forming the optical waveguide.

Abstract: A phosphor device includes a phosphor layer composed of a phosphor glass or phosphor single crystal, a reflective film provided on the phosphor layer, a warping suppression layer provided on the reflective film, and a supporting body bonded to the warping suppression layer by direct bonding. Excitation light incident into the phosphor layer is converted to fluorescence, and the fluorescence and excitation light are reflected by the reflective film and emitted from the phosphor layer.

Abstract: A grating element includes: a support substrate; an optical material layer; a ridge optical waveguide having an incidence surface on which a laser light is incident and an emission end from which an emission light with a desired wavelength is emitted; and a Bragg grating including concave and convex portions formed within the optical waveguide. The optical waveguide includes an incident portion between the incidence surface and the Bragg grating, and a tapered portion between the incident portion and the Bragg grating. In the Bragg grating, a propagation light propagates in single mode. The width Win of the optical waveguide in the incident portion is larger than the width Wgr of the optical waveguide in the Bragg grating. The width Wt of the optical waveguide in the tapered portion is decreased from the incident portion toward the Bragg grating. The relationships represented by formulas (1) to (3) are satisfied.

Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light by itself and a grating device providing an external resonator with the light source. The system performs oscillation in single mode. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (5) are satisfied.

Abstract: An optical waveguide substrate 1 includes an optical waveguide 9 composed of a multi layered film 4 of a plurality of optical material films 5, 6 and having end faces onto which a light is made incident or from which the light is emitted. The end face is an etched surface, and it is provided, on the end face, unevenness 7 corresponding to a difference of etching rates of the optical material films.

Abstract: An external resonator type light-emitting device includes a light source oscillating a semiconductor laser light and a grating element configuring an external resonator together with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating element includes an optical waveguide and a plurality of Bragg gratings formed in the optical waveguide. The optical waveguide includes an incident face on which the semiconductor laser light is incident and an emitting face from which an emitting light having a desired wavelength is emitted.

Abstract: An external resonator type light-emitting device includes a light source oscillating a semiconductor laser light and a grating element configuring an external resonator together with the light source. The light source includes an active layer oscillating said semiconductor laser light. The grating element includes an optical waveguide and a plurality of Bragg gratings formed in the optical waveguide. The optical waveguide includes an incident face to which the semiconductor laser light is incident and an emitting face from which an emitting light having a desired wavelength is emitted. A half value reflectance R50 is larger than a reflectance R2 at an emitting end of the light source. A half value reflectance R50 is 3% or larger. A combined reflectance is not less than the half value reflectance R50 in a wavelength region ??50.

Abstract: An evanescent light generation element for oscillating evanescent light from an optical waveguide to a clad layer, including a 0.1 ?m-10 ?m thin layer composed of a ferroelectric single crystal or oriented crystal having first and second principal surfaces, and incident side end and exit side end surfaces. A ridge optical waveguide is formed in the thin layer and extends between the incident and exit side end surfaces of the thin layer. At least a pair of grooves is formed on both sides of the ridge optical waveguide in the thin layer and opened at the first principal surface of the thin layer. A clad layer is provided on the first principal surface or the second principal surface. A width of the ridge optical waveguide at the exit side end surface is less than a width of the ridge optical waveguide at the incident side end surface.

Abstract: An optical device includes a semiconductor laser light source, a grating element and an optical transmission element. The grating element includes a ridge-type optical waveguide having an incident surface to which a semiconductor laser light is incident and an emitting surface from which an outgoing light having a desired wavelength is emitted, and a Bragg grating formed in the ridge-type optical waveguide. The light transmission element includes an optical transmission part having an incident surface to which the outgoing light from the ridge-type optical waveguide is incident. A near-field diameter in a horizontal direction at the incident surface of the optical transmission part is greater than a near-field diameter in the horizontal direction at the emitting surface of said ridge-type optical waveguide.

Abstract: A plurality of Bragg gratings are formed at predetermined locations of a laminate including a mounting substrate, a clad layer provided on the mounting substrate and an optical material layer provided on the clad layer. Optical waveguides are formed each including at least each of the Bragg gratings. Masks are formed each covering a region corresponding to each of the grating elements on the optical material layer. The optical material layer and clad layer are etched to shape an end face of each of the grating elements.

Abstract: A grating device includes a support substrate, an optical material layer 11 disposed on the support substrate and having a thickness of 0.5 ?m or more and 3.0 ?m or less, a ridge optical waveguide formed by a pair of ridge grooves in the optical material layer and having a light-receiving surface for receiving a semiconductor laser light and a light-emitting surface for emitting light having a desired wavelength, a Bragg grating 12 comprising convexes and concaves formed in the ridge optical waveguide, and a propagating portion 13 disposed between the light-receiving surface and the Bragg grating. The relationships represented by the following Formulas (1) to (4) are satisfied: 0.8 nm???G?6.0 nm??(1); 10 ?m?Lb?300 ?m??(2); 20 nm?td?250 nm??(3); and nb?1.8??(4).

Abstract: A grating device includes a supporting body having a first main face and a second main face, an under clad layer provided on the first main face of the supporting body, an optical material layer provided on the under clad layer, and a back face layer provided on the second main face of the supporting body. The under clad layer is composed of g a material having a refractive index of 1.69 or lower. The optical material layer is composed of a metal oxide having a refractive index of 1.70 or higher and 3.50 or lower and includes a Bragg grating. The back face layer is composed of a material having a refractive index of 1.69 or lower or a metal oxide having a refractive index of 1.70 or higher and 3.50 or lower.

Abstract: It is provided an assembly including an optical material layer composed of a metal oxide, an underlying layer provided over the optical material layer and composed of a metal or a metal silicide, and a resin layer provided over the underlying layer. A mold including a design pattern corresponding with the fine pattern to the resin layer of the assembly to transcript the design pattern to the resin layer. The resin layer and underlying layer are etched to form an opening in the resin layer and underlying layer to expose the optical material layer through the opening. The optical material layer is etched using the underlying layer as a mask to form the fine pattern in the optical material layer.

Abstract: An optical device includes a semiconductor laser light source, a grating element and an optical transmission element. The grating element includes a ridge-type optical waveguide having an incident surface to which a semiconductor laser light is incident and an emitting surface from which an outgoing light having a desired wavelength is emitted, and a Bragg grating formed in the ridge-type optical waveguide. The light transmission element includes an optical transmission part having an incident surface to which the outgoing light from the ridge-type optical waveguide is incident. A near-field diameter in a horizontal direction at the incident surface of the optical transmission part is greater than a near-field diameter in the horizontal direction at the emitting surface of said ridge-type optical waveguide.

Abstract: An optical component includes an optical device comprising a bonding face and an optically polished end face, and a metal film formed on the bonding face of the optical device and for bonding the optical device onto a substrate. The metal film includes a main covering portion covering a region except an end part of the bonding face on the side of the end face and an end part-covering portion covering the bonding face in the end part. A non-covered part, which is not covered by the metal film, is provided between the main covering portion and end part-covering portion.

Abstract: A grating device includes an optical material layer; a channel type optical waveguide region provided in the optical material layer; extension regions provided on the outsides of the channel type optical waveguide region, respectively; a Bragg grating provided in the channel type optical waveguide region; and periodic microstructures provided in the extension regions, respectively. The periodic microstructures are provided in 50 percent or larger of a total of areas of the extension regions.

Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied.

Abstract: An external resonator type light-emitting device includes a light source oscillating a semiconductor laser light and a grating element configuring an external resonator together with the light source. The light source includes an active layer oscillating said semiconductor laser light. The grating element includes an optical waveguide and a plurality of Bragg gratings formed in the optical waveguide. The optical waveguide includes an incident face to which the semiconductor laser light is incident and an emitting face from which an emitting light having a desired wavelength is emitted. A half value reflectance R50 is larger than a reflectance R2 at an emitting end of the light source. A half value reflectance R50 is 3% or larger. A combined reflectance is not less than the half value reflectance R50 in a wavelength region ??50.

Abstract: An external resonator type light-emitting device includes a light source oscillating a semiconductor laser light and a grating element configuring an external resonator together with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating element includes an optical waveguide and a plurality of Bragg gratings formed in the optical waveguide. The optical waveguide includes an incident face on which the semiconductor laser light is incident and an emitting face from which an emitting light having a desired wavelength is emitted.

Abstract: A grating element includes: a support substrate; an optical material layer; a ridge optical waveguide having an incidence surface on which a laser light is incident and an emission end from which an emission light with a desired wavelength is emitted; and a Bragg grating including concave and convex portions formed within the optical waveguide. The optical waveguide includes an incident portion between the incidence surface and the Bragg grating, and a tapered portion between the incident portion and the Bragg grating. In the Bragg grating, a propagation light propagates in single mode. The width Win of the optical waveguide in the incident portion is larger than the width Wgr of the optical waveguide in the Bragg grating. The width Wt of the optical waveguide in the tapered portion is decreased from the incident portion toward the Bragg grating. The relationships represented by formulas (1) to (3) are satisfied.