Patents by Inventor Shoudeng Liang

Shoudeng Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High performance EUV mask
    Patent number: 6905801
    Abstract: An extreme ultraviolet light (EUV) mask structure and method are disclosed to address the structural and processing requirements of EUV lithography. A mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a thin ruthenium layer, to produce a mask obviating the need for a conventional buffer or cap layer.
    Type: Grant
    Filed: December 28, 2002
    Date of Patent: June 14, 2005
    Assignee: Intel Corporation
    Inventors: Shoudeng Liang, Pei-Yang Yan, Guojing Zhang
  • High performance EUV mask
    Publication number: 20040126670
    Abstract: An extreme ultraviolet light (EUV) mask structure and method are disclosed to address the structural and processing requirements of EUV lithography. A mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a thin ruthenium layer, to produce a mask obviating the need for a conventional buffer or cap layer.
    Type: Application
    Filed: December 28, 2002
    Publication date: July 1, 2004
    Inventors: Shoudeng Liang, Pei-Yang Yan, Guojing Zhang
  • Photolithographic mask fabrication
    Patent number: 6627362
    Abstract: A method of making a photolithographic mask includes detecting a defect in a mask blank. The mask blank includes a reflector on a substrate. The method also includes calculating a correction of an absorber pattern to be used in forming an absorber and forming an absorber on the mask blank using the absorber pattern and the calculated absorber pattern correction. The correction reduces effects of the mask blank defect on the operation of the mask.
    Type: Grant
    Filed: October 30, 2001
    Date of Patent: September 30, 2003
    Assignee: Intel Corporation
    Inventors: Alan R. Stivers, Shoudeng Liang, Barry Lieberman
  • Photolithographic mask fabrication
    Publication number: 20030082460
    Abstract: A method of making a photolithographic mask includes detecting a defect in a mask blank. The mask blank includes a reflector on a substrate. The method also includes calculating a correction of an absorber pattern to be used in forming an absorber and forming an absorber on the mask blank using the absorber pattern and the calculated absorber pattern correction. The correction reduces effects of the mask blank defect on the operation of the mask.
    Type: Application
    Filed: October 30, 2001
    Publication date: May 1, 2003
    Inventors: Alan R. Stivers, Shoudeng Liang, Barry Lieberman