Patents by Inventor Shouji Higashida

Shouji Higashida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150303184
    Abstract: A semiconductor device and a fabrication method for the semiconductor device are provided in which an increase of a forward loss is suppressed and a reverse recovery loss is reduced. A semiconductor device may include a semiconductor substrate having a first conductivity type and forming a drain layer; a base layer disposed on a surface of the semiconductor substrate and having a second conductivity type; a source layer disposed on the base layer and having the first conductivity type; a gate insulating film disposed on the base layer and the source layer; a gate electrode disposed on the gate insulating film; a source electrode connected to the base layer and the source layer; a metal layer disposed on a back side of the semiconductor substrate, and subjected to an alloy process with the semiconductor substrate; a metal layer disposed on the metal layer; a metal layer disposed on the metal layer; and a metal layer disposed on the metal layer.
    Type: Application
    Filed: July 2, 2015
    Publication date: October 22, 2015
    Inventor: Shouji HIGASHIDA
  • Publication number: 20110284948
    Abstract: A semiconductor device and a fabrication method for the semiconductor device are provided in which an increase of a forward loss is suppressed and a reverse recovery loss is reduced. A semiconductor device may include a semiconductor substrate having a first conductivity type and forming a drain layer; a base layer disposed on a surface of the semiconductor substrate and having a second conductivity type; a source layer disposed on the base layer and having the first conductivity type; a gate insulating film disposed on the base layer and the source layer; a gate electrode disposed on the gate insulating film; a source electrode connected to the base layer and the source layer; a metal layer disposed on a back side of the semiconductor substrate, and subjected to an alloy process with the semiconductor substrate; a metal layer disposed on the metal layer; a metal layer disposed on the metal layer; and a metal layer disposed on the metal layer.
    Type: Application
    Filed: July 7, 2007
    Publication date: November 24, 2011
    Applicant: ROHM CO., LTD.
    Inventor: Shouji Higashida
  • Patent number: 8035138
    Abstract: A junction field effect transistor of the present invention includes: a first conductivity type semiconductor substrate; a second conductivity type epitaxial layer formed on the semiconductor substrate; a first conductivity type epitaxial layer formed on the second conductivity type epitaxial layer; a second conductivity type source region which penetrates the first conductivity type epitaxial layer in a layer thickness direction thereof and is connected to the second conductivity type epitaxial layer; a second conductivity type drain region which is spaced from the source region, penetrates the first conductivity type epitaxial layer in the layer thickness direction, and is connected to the second conductivity type epitaxial layer; a source electrode connected to the source region; a drain electrode connected to the drain region; and a gate electrode electrically connected to the first conductivity type epitaxial layer between the source region and the drain region.
    Type: Grant
    Filed: August 28, 2007
    Date of Patent: October 11, 2011
    Assignee: Rohm Co., Ltd.
    Inventor: Shouji Higashida
  • Publication number: 20080054312
    Abstract: A junction field effect transistor of the present invention includes: a first conductivity type semiconductor substrate; a second conductivity type epitaxial layer formed on the semiconductor substrate; a first conductivity type epitaxial layer formed on the second conductivity type epitaxial layer; a second conductivity type source region which penetrates the first conductivity type epitaxial layer in a layer thickness direction thereof and is connected to the second conductivity type epitaxial layer; a second conductivity type drain region which is spaced from the source region, penetrates the first conductivity type epitaxial layer in the layer thickness direction, and is connected to the second conductivity type epitaxial layer; a source electrode connected to the source region; a drain electrode connected to the drain region; and a gate electrode electrically connected to the first conductivity type epitaxial layer between the source region and the drain region.
    Type: Application
    Filed: August 28, 2007
    Publication date: March 6, 2008
    Applicant: ROHM CO., LTD.
    Inventor: Shouji Higashida
  • Patent number: 5378257
    Abstract: A process for organic fertilizer production of the invention comprises stirring a batch of the waste matter to be treated with an amount of nitric acid to mix the waste matter with nitric acid, crushing the waste water mixed with nitric acid to make sludge, adding an amount of quicklime to the sludged waste matter mixed with nitric acid and then stirring the waste matter, thereby neutralizing the waste matter with slaked lime formed by the reaction with water, and drying the neutralized waste matter. An apparatus for the production of organic fertilizer is also disclosed.
    Type: Grant
    Filed: April 19, 1993
    Date of Patent: January 3, 1995
    Inventor: Shouji Higashida