Patents by Inventor Shozo Komiyama

Shozo Komiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10577687
    Abstract: A sputtering target, which has a composition comprising: one or more elements selected from Cu, Sn, Sb, Mg, In, and Ti in a range of 0.1 atomic % or more and 15.0 atomic % or less in total; S in a range of 0.5 atomic ppm or more and 200 atomic ppm or less; and a Ag balance including inevitable impurities, is provided.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: March 3, 2020
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Yuto Toshimori, Shozo Komiyama, Ichiro Shiono
  • Patent number: 10443113
    Abstract: A sputtering target is provided for forming a protective film which is used for forming a protective film on a single surface or both surfaces of a Cu wiring film, the sputtering target including 5 to 15 mass % of Ni or Ni and Al in total (where the Ni content is 0.5 mass % or higher); 0.1 to 5.0 mass % of Mn; 0.5 to 7.0 mass % of Fe; and a balance including Cu and inevitable impurities.
    Type: Grant
    Filed: October 10, 2014
    Date of Patent: October 15, 2019
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Satoru Mori, Shozo Komiyama
  • Publication number: 20170191154
    Abstract: A sputtering target, which has a composition comprising: one or more elements selected from Cu, Sn, Sb, Mg, In, and Ti in a range of 0.1 atomic % or more and 15.0 atomic % or less in total; S in a range of 0.5 atomic ppm or more and 200 atomic ppm or less; and a Ag balance including inevitable impurities, is provided.
    Type: Application
    Filed: February 18, 2016
    Publication date: July 6, 2017
    Inventors: Yuto Toshimori, Shozo Komiyama, Ichiro Shiono
  • Publication number: 20160201188
    Abstract: A sputtering target is provided for forming a protective film which is used for forming a protective film on a single surface or both surfaces of a Cu wiring film, the sputtering target including 5 to 15 mass % of Ni or Ni and Al in total (where the Ni content is 0.5 mass % or higher); 0.1 to 5.0 mass % of Mn; 0.5 to 7.
    Type: Application
    Filed: October 10, 2014
    Publication date: July 14, 2016
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Satoru Mori, Shozo Komiyama
  • Publication number: 20160056025
    Abstract: The cylindrical sputtering target is a Cu—Ga alloy cylindrical sputtering target made of a Cu alloy containing 15 atom % to 35 atom % of Ga, in which the Cu alloy has a granular crystal structure.
    Type: Application
    Filed: March 27, 2014
    Publication date: February 25, 2016
    Inventors: Shinji Kato, Shoubin Zhang, Shozo Komiyama
  • Publication number: 20150041313
    Abstract: A silver-based cylindrical target is provided. The target consists of silver or a single-phase silver alloy in which an additive component is solid-soluted, wherein a ratio A/B is 0.8-1.2, A being a diameter of crystal grains in a direction along a central axis of a cylinder in a cross section including the central axis of the cylinder; and B being a diameter of crystal grains in a direction perpendicular to the central axis, an oxygen content is 100 ppm or less, and a content of non-metallic inclusions is 20 ppm or less.
    Type: Application
    Filed: November 14, 2012
    Publication date: February 12, 2015
    Inventor: Shozo Komiyama
  • Patent number: 8821769
    Abstract: Disclosed is a silver alloy target for forming a reflective electrode film for an organic EL element, which has a component composition containing 0.1% to 1.5% by mass of In and the remainder composed of Ag and unavoidable impurities. The average grain diameter of the crystal grain of the alloy is 150 to 400 ?m, and the dispersion of the grain diameter of the crystal grain is 20% of the average grain diameter or less.
    Type: Grant
    Filed: October 5, 2010
    Date of Patent: September 2, 2014
    Assignee: Mitsubishi Materials Corporation
    Inventors: Shozo Komiyama, Ikuo Ito
  • Patent number: 8815149
    Abstract: A semi-reflective film and reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities, and a target which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities; and a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities, and an Ag alloy sputtering target for forming a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities.
    Type: Grant
    Filed: December 28, 2006
    Date of Patent: August 26, 2014
    Assignee: Mitsubishi Materials Corporation
    Inventors: Shozo Komiyama, Gou Yamaguchi, Akifumi Mishima
  • Patent number: 8502285
    Abstract: This thin-film transistor includes a drain electrode film and a source electrode film, each of which includes a composite copper alloy film including a copper alloy underlayer that is formed so as to come into contact with a barrier film and a Cu layer that is formed on the copper alloy underlayer. One aspect of the copper alloy underlayer includes a concentrated layer including 2 mol % to 30 mol % of Ca, 20 mol % to 50 mol % of oxygen, and Cu and inevitable impurities as the balance. Another aspect of the copper alloy underlayer includes a concentrated layer including 2 mol % to 30 mol % of Ca, 1 mol % to 10 mol % in total of one or more selected from the group consisting of Al, Sn, and Sb, 20 mol % to 50 mol % of oxygen, and Cu and inevitable impurities as the balance.
    Type: Grant
    Filed: September 24, 2009
    Date of Patent: August 6, 2013
    Assignees: Mitsubishi Materials Corporation, Ulvac, Inc.
    Inventors: Satoru Mori, Shozo Komiyama
  • Patent number: 8384083
    Abstract: This thin-film transistor includes adhesive strength enhancing films between a barrier film and electrode films. Each of the adhesive strength enhancing film is composed of two zones including (a) a pure copper zone that is formed on the electrode film side, and (b) a component concentrated zone that is formed in an interface portion contact with the barrier film, and that includes Cu, Ca, oxygen, and Si as constituents. In concentration distributions of Ca and oxygen in a thickness direction of the component concentrated zone, a maximum content of Ca of a Ca-containing peak is in a range of 5 to 20 at %, and a maximum content of oxygen of an oxygen-containing peak is in a range of 30 to 50 at %, respectively.
    Type: Grant
    Filed: September 24, 2009
    Date of Patent: February 26, 2013
    Assignees: Mitsubishi Materials Corporation, Ulvac, Inc.
    Inventors: Satoru Mori, Shozo Komiyama
  • Patent number: 8268141
    Abstract: A high-strength sputtering target for forming a protective film for an optical recording medium, obtained by sintering a mixed powder containing, in mol %, 10 to 70% of a zirconium oxide or hafnium oxide and 50% or less (over 0%) of silicon dioxide, and 0.1 to 8.4% of yttrium oxide as necessary, and the remainder containing aluminum oxide, lanthanum oxide, or indium oxide and inevitable impurities, wherein a complex oxide phase of Al6Si2O13, La2SiO5, or In2Si2O7 is formed in a base of the target.
    Type: Grant
    Filed: June 8, 2007
    Date of Patent: September 18, 2012
    Assignee: Mitsubishi Materials Corporation
    Inventors: Shoubin Zhang, Hayato Sasaki, Shozo Komiyama, Akifumi Mishima
  • Publication number: 20120193589
    Abstract: Disclosed is a silver alloy target for forming a reflective electrode film for an organic EL element, which has a component composition containing 0.1% to 1.5% by mass of In and the remainder composed of Ag and unavoidable impurities. The average grain diameter of the crystal grain of the alloy is 150 to 400 ?m, and the dispersion of the grain diameter of the crystal grain is 20% of the average grain diameter or less.
    Type: Application
    Filed: October 5, 2010
    Publication date: August 2, 2012
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Shozo Komiyama, Ikuo Ito
  • Publication number: 20120058353
    Abstract: An Al alloy reflective electrode film in the anode layer of a top emission type organic EL element is provided. The Al alloy repeller has high reflectivity, high electric conductivity, a low average surface roughness, and low contact resistance. The Al alloy reflective electrode film is made of an Al alloy consisting of 0.5 to 15% by mass of Mg, a total amount of 0.5 to 10% by mass of one or more elements selected from the group consisting of La, Ce, Pr, Nd, and Eu, and the remainder composed of Al and inevitable impurities, or consisting of 0.5 to 15% by mass of Mg, 0.5 to 10% by mass of Ce, a total amount of 2 to 9% by mass of one or two elements selected from the group consisting of Ni and Co, and the remainder composed of Al and inevitable impurities. Because of these configuration, the reflective electrode film having high reflectivity, high electric conductivity, a low average surface roughness, and low contact resistance with the hole injection film, such as ITO and AZO, is formed.
    Type: Application
    Filed: May 14, 2010
    Publication date: March 8, 2012
    Inventors: Shozo Komiyama, Gou Yamaguchi
  • Patent number: 8105467
    Abstract: Provided is a sputtering target for forming a phosphor film in an electroluminescence element, which can maintain high strength even when it is allowed to stand in the atmosphere for a long time. The target has a chemical composition of Al: 20 to 50 mass %, Eu: 1 to 10 mass %, and the remainder containing Ba and inevitable impurities, and has a structure wherein Ba in which Eu is solid-solubilized and Al form an intermetallic compound phase, wherein the intermetallic compound phase of Ba in which Eu is solid-solubilized and Al includes a BaAl4 intermetallic compound phase and a Ba7Al13 intermetallic compound phase, and Eu forms a solid solution with Ba in the BaAl4 intermetallic compound and in the Ba7Al13 intermetallic compound, respectively.
    Type: Grant
    Filed: May 1, 2006
    Date of Patent: January 31, 2012
    Assignee: Mitsubishi Materials Corporation
    Inventors: Shoubin Zhang, Shozo Komiyama, Akifumi Mishima
  • Publication number: 20110193088
    Abstract: This thin-film transistor includes adhesive strength enhancing films between a barrier film and electrode films. Each of the adhesive strength enhancing film is composed of two zones including (a) a pure copper zone that is formed on the electrode film side, and (b) a component concentrated zone that is formed in an interface portion contact with the barrier film, and that includes Cu, Ca, oxygen, and Si as constituents. In concentration distributions of Ca and oxygen in a thickness direction of the component concentrated zone, a maximum content of Ca of a Ca-containing peak is in a range of 5 to 20 at %, and a maximum content of oxygen of an oxygen-containing peak is in a range of 30 to 50 at %, respectively.
    Type: Application
    Filed: September 24, 2009
    Publication date: August 11, 2011
    Inventors: Satoru Mori, Shozo Komiyama
  • Publication number: 20100170785
    Abstract: A high-strength sputtering target for forming a protective film for an optical recording medium, obtained by sintering a mixed powder containing, in mol %, 10 to 70% of a zirconium oxide or hafnium oxide and 50% or less (over 0%) of silicon dioxide, and 0.1 to 8.4% of yttrium oxide as necessary, and the remainder containing aluminum oxide, lanthanum oxide, or indium oxide and inevitable impurities, wherein a complex oxide phase of Al6Si2O13, La2SiO5, or In2Si2O7 is formed in a base of the target.
    Type: Application
    Filed: June 8, 2007
    Publication date: July 8, 2010
    Applicant: Mitsubishi Materials Corporation
    Inventors: Shoubin Zhang, Hayato Sasaki, Shozo Komiyama, Akifumi Mishima
  • Publication number: 20090169417
    Abstract: A semi-reflective film and reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities, and a target which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities; and a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities, and an Ag alloy sputtering target for forming a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities.
    Type: Application
    Filed: December 28, 2006
    Publication date: July 2, 2009
    Applicant: Mitsubishi Materials Corporation
    Inventors: Shozo Komiyama, Gou Yamaguchi, Akifumi Mishima
  • Publication number: 20090045052
    Abstract: Provided is a sputtering target for forming a phosphor film in an electroluminescence element, which can maintain high strength even when it is allowed to stand in the atmosphere for a long time. The target has a chemical composition of Al: 20 to 50 mass %, Eu: 1 to 10 mass %, and the remainder containing Ba and inevitable impurities, and has a structure wherein Ba in which Eu is solid-solubilized and Al form an intermetallic compound phase, wherein the intermetallic compound phase of Ba in which Eu is solid-solubilized and Al includes a BaAl4 intermetallic compound phase and a Ba7Al13 intermetallic compound phase, and Eu forms a solid solution with Ba in the BaAl4 intermetallic compound and in the Ba7Al13 intermetallic compound, respectively.
    Type: Application
    Filed: May 1, 2006
    Publication date: February 19, 2009
    Applicant: Mitsubishi Materials Corporation
    Inventors: Shoubin Zhang, Shozo Komiyama, Akifumi Mishima
  • Patent number: 5338331
    Abstract: A high-strength target material for forming a thin magnetooptical recording film having a structure comprising: (a) 20-75% of a complex phase in which at least one crystallized iron-group metal is dispersed finely and uniformly in a dendritic, acicular or block form in a proportion of 5-40%, of the total composition, in a matrix of an intermetallic compound of at least one first rare earth metal and at least one iron-group metal; (b) 15-40% of a rare earth metal phase of at least one second rare earth metal; and (c) the remainder being an intermetallic compound phase of a reaction phase of the complex phase and the rare earth metal phase, all percentages being by area, wherein the first and second rare earth metals are the same or different. The target material has such a low permeability that thin magnetooptical recording films can be formed by a magnetron sputtering process with a high utilization.
    Type: Grant
    Filed: June 2, 1992
    Date of Patent: August 16, 1994
    Assignee: Mitsubishi Materials Corporation
    Inventors: Kenichi Hijikata, Shozo Komiyama, Hitoshi Maruyama