Patents by Inventor Shu-Chen Lu

Shu-Chen Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200204373
    Abstract: A network security system includes: a plurality of sub-nodes and an identity authentication device. The identity authentication device is configured to generate an initial dynamic subnet key, and group the sub-nodes into one or more subnets according to the initial dynamic subnet key and at least one preconfigured characteristic parameter. For each subnet of the one or more subnets, the identity authentication device respectively selects a virtual authenticator to manage each of the sub-nodes of each of the subnets. When a new member sub-node joins one subnet of the one or more subnets, each of the sub-nodes existed in the one subnet and the virtual authenticator of the one subnet each input a current version dynamic subnet key into a hash algorithm to update the current version dynamic subnet key for performing a consensus update process.
    Type: Application
    Filed: August 2, 2019
    Publication date: June 25, 2020
    Inventors: Shu-Ping LU, Cheng-Yun HO, Chin-Laung LEI, Szu-Hsien HUANG, Xin-Chen CHEN
  • Publication number: 20200184642
    Abstract: The present invention discloses a method for detecting skin conditions, and the method includes the steps of: capturing a skin image from a suspected subject; decomposing the skin image into an RBX image through RBX color-space transformation; and determining skin condition of the subject according to a parameter of a color model of the RBX image.
    Type: Application
    Filed: December 10, 2019
    Publication date: June 11, 2020
    Inventors: Chih-Yu Wang, Po-Han HUANG, Shu-Chen CHANG, Chia-Chen LU, Wen-Chien TSAI, Yun-Hsuan OU YANG
  • Patent number: 10497704
    Abstract: A method of fabricating a buried word line structure includes providing a substrate with a word line trench therein. Two source/drain doped regions are disposed in the substrate at two sides of the word line trench. Later, a silicon oxide layer is formed to cover the word line trench. A titanium nitride layer is formed to cover the silicon oxide layer. Next, a tilt ion implantation process is performed to implant silicon atoms into the titanium nitride layer to transform part of the titanium nitride layer into a titanium silicon nitride layer. A conductive layer is formed in the word line trench. Subsequently, part of the conductive layer, part of the titanium silicon nitride layer and part of the silicon oxide layer are removed to form a recess. Finally, a cap layer fills in the recess.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: December 3, 2019
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Ger-Pin Lin, Kuan-Chun Lin, Chi-Mao Hsu, Shu-Yen Chan, Shih-Fang Tzou, Tsuo-Wen Lu, Tien-Chen Chan, Feng-Yi Chang, Shih-Kuei Yen, Fu-Che Lee
  • Publication number: 20190359912
    Abstract: An ophthalmic composition includes effective amounts of a comfort enhancing agent, a surfactant, and a buffering agent. The comfort enhancing agent includes a first functional monomer that is 2-methacryloyloxyethyl phosphorylcholine (MPC). The comfort enhancing agent has a HLB value between 8 and 40. In addition, the comfort enhancing agent can further include a second functional monomer that is preferably n-butyl methacrylate (BMA).
    Type: Application
    Filed: October 19, 2018
    Publication date: November 28, 2019
    Inventors: WEI-JIA TING, Ting-Chun Kuan, SHU-CHEN LU
  • Publication number: 20190312036
    Abstract: A semiconductor device includes a semiconductor substrate having a gate trench including of an upper trench and a lower trench. The upper trench is wider than the lower trench. A gate is embedded in the gate trench. The gate includes an upper portion and a lower portion. A first gate dielectric layer is between the upper portion and a sidewall of the upper trench. The first gate dielectric layer has a first thickness. A second gate dielectric layer is between the lower portion and a sidewall of the lower trench and between the lower portion and a bottom surface of the lower trench. The second gate dielectric layer has a second thickness that is smaller than the first thickness.
    Type: Application
    Filed: June 18, 2019
    Publication date: October 10, 2019
    Inventors: Tsuo-Wen Lu, Ger-Pin Lin, Tien-Chen Chan, Shu-Yen Chan
  • Patent number: 10373958
    Abstract: A semiconductor device includes a semiconductor substrate having a gate trench including an upper trench and a lower trench. The upper trench is wider than the lower trench. A gate is embedded in the gate trench. The gate includes an upper portion and a lower portion. A first gate dielectric layer is between the upper portion and a sidewall of the upper trench. The first gate dielectric layer has a first thickness. A second gate dielectric layer is between the lower portion and a sidewall of the lower trench and between the lower portion and a bottom surface of the lower trench. The second gate dielectric layer has a second thickness that is smaller than the first thickness.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: August 6, 2019
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Tsuo-Wen Lu, Ger-Pin Lin, Tien-Chen Chan, Shu-Yen Chan
  • Publication number: 20190164977
    Abstract: A method of fabricating a buried word line structure includes providing a substrate with a word line trench therein. Two source/drain doped regions are disposed in the substrate at two sides of the word line trench. Later, a silicon oxide layer is formed to cover the word line trench. A titanium nitride layer is formed to cover the silicon oxide layer. Next, a tilt ion implantation process is performed to implant silicon atoms into the titanium nitride layer to transform part of the titanium nitride layer into a titanium silicon nitride layer. A conductive layer is formed in the word line trench. Subsequently, part of the conductive layer, part of the titanium silicon nitride layer and part of the silicon oxide layer are removed to form a recess. Finally, a cap layer fills in the recess.
    Type: Application
    Filed: December 20, 2018
    Publication date: May 30, 2019
    Inventors: Ger-Pin Lin, Kuan-Chun Lin, Chi-Mao Hsu, Shu-Yen Chan, Shih-Fang Tzou, Tsuo-Wen Lu, Tien-Chen Chan, Feng-Yi Chang, Shih-Kuei Yen, Fu-Che Lee
  • Publication number: 20180311372
    Abstract: Methods of treating metabolic diseases and disorders using a composition comprising an antigen binding protein specific for the GIPR polypeptide conjugated to a GLP-1 receptor agonist are provided. In various embodiments the metabolic disease or disorder is type 2 diabetes, obesity, dyslipidemia, elevated glucose levels, elevated insulin levels and diabetic nephropathy. In certain embodiments the composition comprises an antibody or functional fragment thereof comprising a cysteine at one or more conjugation site(s) wherein the GLP-1 receptor agonist is conjugated to the antibody or functional fragment thereof through the side-chain of the cysteine residue.
    Type: Application
    Filed: January 16, 2018
    Publication date: November 1, 2018
    Applicant: AMGEN INC.
    Inventors: Yuan CHENG, Chawita NETIROJJANAKUL, Jerry Ryan HOLDER, Bin WU, James R. FALSEY, Bradley J. HERBERICH, Kelvin SHAM, Leslie P. MIRANDA, Shu-Chen LU, Murielle VENIANT-ELLISON, Shanaka STANISLAUS, Junming YIE, Jing XU
  • Patent number: 9925293
    Abstract: A solution for treating contact lens is provided. The solution includes about 0.01-1.0 parts by weight (pbw) of a polymer having phosphorylcholine groups, about 0.01-1 pbw of an inorganic salt, and about 100 pbw of water. The polymer has a number-average molecular weight of about 4,000 to about 1,000,000 daltons and has a structure of formula (I): wherein, in formula (I), m is a positive integer, n is zero or a positive integer, and R is C2-C12 alkyl group or C2-C12 hydroxyalkyl group. When n is a positive integer, m/n is greater than 1.
    Type: Grant
    Filed: September 5, 2016
    Date of Patent: March 27, 2018
    Assignee: PEGAVISION CORPORATION
    Inventors: Han-Yi Chang, Ya-Hsuan Liao, Shu-Chen Lu, Ya-Hui Chang, Yu-Chin Lai
  • Publication number: 20170368221
    Abstract: A solution for treating contact lens is provided. The solution includes about 0.01-1.0 parts by weight (pbw) of a polymer having phosphorylcholine groups, about 0.01-1 pbw of an inorganic salt, and about 100 pbw of water. The polymer has a number-average molecular weight of about 4,000 to about 1,000,000 daltons and has a structure of formula (I): wherein, in formula (I), m is a positive integer, n is zero or a positive integer, and R is C2-C12 alkyl group or C2-C12 hydroxyalkyl group. When n is a positive integer, m/n is greater than 1.
    Type: Application
    Filed: September 5, 2016
    Publication date: December 28, 2017
    Inventors: Han-Yi CHANG, Ya-Hsuan LIAO, Shu-Chen LU, Ya-Hui CHANG, Yu-Chin LAI
  • Publication number: 20170233467
    Abstract: The present disclosure provides methods of treating ocular disorders using anti-angiogenic antibodies and pharmaceutical formulations.
    Type: Application
    Filed: October 16, 2015
    Publication date: August 17, 2017
    Applicant: AMGEN INC.
    Inventors: Shu-Chen Lu, Murielle M. Veniant-Ellison, Jing Xu, Hossein Salimi-Moosavi, Jonathan Daniel Oliner
  • Patent number: 9493554
    Abstract: This disclosure relates to apelin antigen-binding proteins and methods of using the apelin antigen-binding proteins. The antigen-binding protein may comprise an antibody to apelin and can be used to treat pathological conditions involving angiogenesis. The pathological conditions can comprise cancer or retinopathy and/or retinopathy-related complications.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: November 15, 2016
    Assignee: AMGEN INC.
    Inventors: Shu-Chen Lu, Minghan Wang
  • Publication number: 20160053000
    Abstract: This disclosure relates to apelin antigen-binding proteins and methods of using the apelin antigen-binding proteins. The antigen-binding protein may comprise an antibody to apelin and can be used to treat pathological conditions involving angiogenesis. The pathological conditions can comprise cancer or retinopathy and/or retinopathy-related complications.
    Type: Application
    Filed: August 28, 2015
    Publication date: February 25, 2016
    Applicant: AMGEN INC.
    Inventors: Shu-Chen LU, Minghan WANG
  • Patent number: 9156911
    Abstract: This disclosure relates to apelin antigen-binding proteins and methods of using the apelin antigen-binding proteins. The antigen-binding protein may comprise an antibody to apelin and can be used to treat pathological conditions involving angiogenesis. The pathological conditions can comprise cancer or retinopathy and/or retinopathy-related complications.
    Type: Grant
    Filed: July 17, 2012
    Date of Patent: October 13, 2015
    Assignee: AMGEN INC.
    Inventors: Shu-Chen Lu, Minghan Wang
  • Patent number: 9026957
    Abstract: An embodiment of a feed-forward method of determining a photomask pattern is provided. The method includes providing design data associated with an integrated circuit device. A thickness of a coating layer to be used in fabricating the integrated circuit device is predicted based on the design data. This prediction is used to generate a gradating pattern. A photomask is formed having the gradating pattern.
    Type: Grant
    Filed: February 25, 2014
    Date of Patent: May 5, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Chu Liu, Kuei Shun Chen, Chih-Yang Yeh, Te-Chih Huang, Wen-Hao Liu, Ying-Chou Cheng, Boren Luo, Tsong-Hua Ou, Yu-Po Tang, Wen-Chun Huang, Ru-Gun Liu, Shu-Chen Lu, Yu Lun Liu, Yao-Ching Ku, Tsai-Sheng Gau
  • Publication number: 20140328850
    Abstract: This disclosure relates to apelin antigen-binding proteins and methods of using the apelin antigen-binding proteins. The antigen-binding protein may comprise an antibody to apelin and can be used to treat pathological conditions involving angiogenesis. The pathological conditions can comprise cancer or retinopathy and/or retinopathy-related complications.
    Type: Application
    Filed: July 17, 2012
    Publication date: November 6, 2014
    Inventors: Shu-Chen Lu, Minghan Wang
  • Publication number: 20140170537
    Abstract: An embodiment of a feed-forward method of determining a photomask pattern is provided. The method includes providing design data associated with an integrated circuit device. A thickness of a coating layer to be used in fabricating the integrated circuit device is predicted based on the design data. This prediction is used to generate a gradating pattern. A photomask is formed having the gradating pattern.
    Type: Application
    Filed: February 25, 2014
    Publication date: June 19, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: George Liu, Kuei Shun Chen, Chih-Yang Yeh, Te-Chih Huang, Wen-Hao Liu, Ying-Chou Cheng, Boren Luo, Tsong-Hua Ou, Yu-Po Tang, Wen-Chun Huang, Ru-Gun Liu, Shu-Chen Lu, Yu Lun Liu, Yao-Ching Ku, Tsai-Sheng Gau
  • Patent number: 8673520
    Abstract: An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage. Each of the features of the first and second array includes an opening disposed in an area of attenuating material.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: March 18, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: George Liu, Kuei Shun Chen, Chih-Yang Yeh, Te-Chih Huang, Wen-Hao Liu, Ying-Chou Cheng, Boren Luo, Tsong-Hua Ou, Yu-Po Tang, Wen-Chun Huang, Ru-Gun Liu, Shu-Chen Lu, Yu Lun Liu, Yao-Ching Ku, Tsai-Sheng Gau
  • Patent number: 8431291
    Abstract: An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage.
    Type: Grant
    Filed: October 25, 2011
    Date of Patent: April 30, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: George Liu, Kuei Shun Chen, Chih-Yang Yeh, Te-Chih Huang, Wen-Hao Liu, Ying-Chou Cheng, Boren Luo, Tsong-Hua Ou, Yu-Po Tang, Wen-Chun Huang, Ru-Gun Liu, Shu-Chen Lu, Yu Lun Liu, Yao-Ching Ku, Tsai-Sheng Gau
  • Publication number: 20120040278
    Abstract: An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage.
    Type: Application
    Filed: October 25, 2011
    Publication date: February 16, 2012
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
    Inventors: George Liu, Kuei Shun Chen, Chih-Yang Yeh, Te-Chih Huang, Wen-Hao Liu, Ying-Chou Cheng, Boren Luo, Tsong-Hua Ou, Yu-Po Tang, Wen-Chun Huang, Ru-Gun Liu, Shu-Chen Lu, Yu Lun Liu, Yao-Ching Ku, Tsai-Sheng Gau