Patents by Inventor Shu-Hui Chen

Shu-Hui Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12153350
    Abstract: In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.
    Type: Grant
    Filed: July 19, 2023
    Date of Patent: November 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ru-Gun Liu, Huicheng Chang, Chia-Cheng Chen, Jyu-Horng Shieh, Liang-Yin Chen, Shu-Huei Suen, Wei-Liang Lin, Ya Hui Chang, Yi-Nien Su, Yung-Sung Yen, Chia-Fong Chang, Ya-Wen Yeh, Yu-Tien Shen
  • Publication number: 20240387537
    Abstract: An IC driver includes a cascode arrangement of first-type transistors coupled in series with a cascode arrangement of second-type transistors different from the first-type transistors. Each cascode arrangement includes an active area extending in a first direction, gate structures extending perpendicular to the first direction and overlying the active area at locations corresponding to the transistors of the cascode arrangement, first through fourth metal segments extending in the first direction in a first metal layer of the IC, first and second vias electrically coupling respective first and second gate structures to the first and second metal segments, a third via electrically coupling a source terminal of the cascode arrangement to the third metal segment, and a fourth via electrically coupling a drain terminal of the cascode arrangement to the fourth metal segment. The third and fourth metal segments are aligned along the first direction.
    Type: Application
    Filed: May 15, 2023
    Publication date: November 21, 2024
    Inventors: Chia-Hui CHEN, Shu-Wei CHUNG, Kuei-Feng YEN, Chia-Jung CHANG
  • Publication number: 20240387518
    Abstract: A semiconductor device includes a substrate. A first nanosheet structure and a second nanosheet structure are disposed on the substrate. Each of the first and second nanosheet structures have at least one nanosheet forming source/drain regions and a gate structure including a conductive gate contact. A first oxide structure is disposed on the substrate between the first and second nanosheet structures. A conductive terminal is disposed in or on the first oxide structure. The conductive terminal, the first oxide structure and the gate structure of the first nanosheet structure define a capacitor.
    Type: Application
    Filed: July 29, 2024
    Publication date: November 21, 2024
    Inventors: Chung-Hui Chen, Wan-Te Chen, Shu-Wei Chung, Tung-Heng Hsieh, Tzu-Ching Chang, Tsung-Hsin Yu, Yung Feng Chang
  • Publication number: 20240362392
    Abstract: An analog standard cell is provided. An analog standard cell according to the present disclosure includes a first active region and a second active region extending along a first direction, and a plurality of conductive lines in a first metal layer over the first active region and the second active region. The plurality of conductive lines includes a first conductive line and a second conductive line disposed directly over the first active region, a third conductive line and a fourth conductive line disposed directly over the second active region, a middle conductive line disposed between the second conductive line and the third conductive line, a first power line spaced apart from the middle conductive line by the first conductive line and the second conductive line, and a second power line spaced apart from the middle conductive line by the third conductive line and the fourth conductive line.
    Type: Application
    Filed: July 11, 2024
    Publication date: October 31, 2024
    Inventors: Shu-Wei Chung, Tung-Heng Hsieh, Chung-Hui Chen, Chung-Yi Lin
  • Publication number: 20240327336
    Abstract: The present invention provides novel compounds which activate the Kv7 potassium channels. Separate aspects of the invention are directed to pharmaceutical compositions comprising said compounds and uses of the compounds to treat disorders responsive to the activation of Kv7 potassium channels.
    Type: Application
    Filed: December 6, 2022
    Publication date: October 3, 2024
    Applicant: H. Lundbeck A/S
    Inventors: Mario Rottlander, Xiaofang Wang, Debasis Das, Jian Hong, Shu Hui Chen, Anette Graven Sams, Krestian Larsen
  • Patent number: 12094880
    Abstract: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.
    Type: Grant
    Filed: February 13, 2023
    Date of Patent: September 17, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ali Keshavarzi, Ta-Pen Guo, Shu-Hui Sung, Hsiang-Jen Tseng, Shyue-Shyh Lin, Lee-Chung Lu, Chung-Cheng Wu, Li-Chun Tien, Jung-Chan Yang, Ting Yu Chen, Min Cao, Yung-Chin Hou
  • Patent number: 12094872
    Abstract: A semiconductor device includes a substrate. A first nanosheet structure and a second nanosheet structure are disposed on the substrate. Each of the first and second nanosheet structures have at least one nanosheet forming source/drain regions and a gate structure including a conductive gate contact. A first oxide structure is disposed on the substrate between the first and second nanosheet structures. A conductive terminal is disposed in or on the first oxide structure. The conductive terminal, the first oxide structure and the gate structure of the first nanosheet structure define a capacitor.
    Type: Grant
    Filed: December 10, 2021
    Date of Patent: September 17, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chung-Hui Chen, Wan-Te Chen, Shu-Wei Chung, Tung-Heng Hsieh, Tzu-Ching Chang, Tsung-Hsin Yu, Yung Feng Chang
  • Patent number: 12073165
    Abstract: An analog standard cell is provided. An analog standard cell according to the present disclosure includes a first active region and a second active region extending along a first direction, and a plurality of conductive lines in a first metal layer over the first active region and the second active region. The plurality of conductive lines includes a first conductive line and a second conductive line disposed directly over the first active region, a third conductive line and a fourth conductive line disposed directly over the second active region, a middle conductive line disposed between the second conductive line and the third conductive line, a first power line spaced apart from the middle conductive line by the first conductive line and the second conductive line, and a second power line spaced apart from the middle conductive line by the third conductive line and the fourth conductive line.
    Type: Grant
    Filed: September 16, 2021
    Date of Patent: August 27, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shu-Wei Chung, Tung-Heng Hsieh, Chung-Hui Chen, Chung-Yi Lin
  • Patent number: 11896632
    Abstract: Disclosed herein are methods for inhibiting growth of oral pathogenic bacteria and alleviating an oral pathogenic bacteria-associated disorder using a culture of at least one lactic acid bacterial strain selected from the group consisting of Lactobacillus rhamnosus MP108 which is deposited at the China General Microbiological Culture Collection Center (CGMCC) under an accession number CGMCC 21225, and Lactobacillus paracasei MP137 which is deposited at the CGMCC under an accession number CGMCC 21224.
    Type: Grant
    Filed: January 11, 2022
    Date of Patent: February 13, 2024
    Assignee: GLAC BIOTECH CO., LTD.
    Inventors: Hsieh-Hsun Ho, Yi-Wei Kuo, Ching-Wei Chen, Wen-Yang Lin, Jui-Fen Chen, Shu-Hui Chen
  • Patent number: 11759487
    Abstract: The invention provides a method of increasing an amount of oral immunoglobulin A (IgA) and/or inhibiting oral pathogens in a subject in need thereof, which utilizes a composition including a therapeutically effective amount of probiotics as an effective ingredient. The probiotics include Lactobacillus plantarum LPL28, which can efficiently increase the amount of oral IgA and/or inhibit the oral pathogens, and thus have a potential to prevent teeth cavities and/or periodontal diseases.
    Type: Grant
    Filed: October 27, 2021
    Date of Patent: September 19, 2023
    Assignee: GLAC BIOTECH CO., LTD.
    Inventors: Hsieh-Hsun Ho, Wen-Yang Lin, Yi-Wei Kuo, Yen-Yu Huang, Jia-Hung Lin, Chi-Huei Lin, Cheng-Ruei Liu, Shu-Hui Chen
  • Patent number: 11630114
    Abstract: The present invention relates to a method for quantitative measurement of catechol estrogen bound protein in blood sample. By detecting adduction levels of binding sites of the catechol estrogen on the protein in blood sample, the catechol estrogen bound protein in the blood sample can be detected quantitatively and a limit of quantitation can be decreased.
    Type: Grant
    Filed: May 28, 2021
    Date of Patent: April 18, 2023
    Assignee: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Shu-Hui Chen, Yu-Shan Huang, Hung-Hsiang Jen, Yu-Min Lin
  • Publication number: 20230036629
    Abstract: Disclosed herein are methods for inhibiting growth of oral pathogenic bacteria and alleviating an oral pathogenic bacteria-associated disorder using a culture of at least one lactic acid bacterial strain selected from the group consisting of Lactobacillus rhamnosus MP108 which is deposited at the China General Microbiological Culture Collection Center (CGMCC) under an accession number CGMCC 21225, and Lactobacillus paracasei MP137 which is deposited at the CGMCC under an accession number CGMCC 21224.
    Type: Application
    Filed: January 11, 2022
    Publication date: February 2, 2023
    Inventors: Hsieh-Hsun Ho, Yi-Wei Kuo, Ching-Wei Chen, Wen-Yang Lin, Jui-Fen Chen, Shu-Hui Chen
  • Publication number: 20230031534
    Abstract: Disclosed herein are methods for alleviating an enteric pathogenic bacterium-associated disorder and inhibiting growth of enteric pathogenic bacteria using a composition containing cultures of Lactobacillus rhamnosus MP108 which is deposited at the China General Microbiological Culture Collection Center (CGMCC) under an accession number CGMCC 21225, and Lactobacillus paracasei MP137 which is deposited at the CGMCC under an accession number CGMCC 21224.
    Type: Application
    Filed: January 11, 2022
    Publication date: February 2, 2023
    Inventors: Hsieh-Hsun HO, Yi-Wei Kuo, Ching-Wei Chen, Jui-Fen Chen, Shu-Hui Chen
  • Patent number: 11548849
    Abstract: The present invention provides novel compounds (e.g., compounds of Formula I) which activate the Kv7 potassium channels. Separate aspects of the invention are directed to pharmaceutical compositions comprising said compounds and uses of the compounds to treat disorders responsive to the activation of Kv7 potassium channels.
    Type: Grant
    Filed: July 30, 2020
    Date of Patent: January 10, 2023
    Assignee: H. Lundbeck A/S
    Inventors: Mario Rottlander, Xiaofang Wang, Debasis Das, Jian Hong, Shu Hui Chen, Anette Graven Sams, Krestian Larsen
  • Publication number: 20230000930
    Abstract: A composition, which comprises at least one of an AP-32 strain of Lactobacillus salivarius subsp. salicinius, a BLI-02 strain of Bifidobacterium longum subsp. infantis and fermentation metabolites thereof, has a physiological activity of elevating ability of brain tissue. The present invention may be used in form of a food composition or a pharmaceutical composition to elevate the ability of brain tissue.
    Type: Application
    Filed: April 22, 2022
    Publication date: January 5, 2023
    Inventors: HSIEH-HSUN HO, YI WEI KUO, KO-CHIANG HSIA, WEN-YANG LIN, JIA-HUNG LIN, CHI-HUEI LIN, CHENG-RUEI LIU, SHU-HUI CHEN
  • Publication number: 20220380300
    Abstract: The present invention provides novel compounds which activate the Kv7 potassium channels. Separate aspects of the invention are directed to pharmaceutical compositions comprising said compounds and uses of the compounds to treat disorders responsive to the activation of Kv7 potassium channels.
    Type: Application
    Filed: July 20, 2022
    Publication date: December 1, 2022
    Applicant: H. Lundbeck A/S
    Inventors: Mario Rottlander, Anette Graven Sams, Xiaofang Wang, Debasis Das, Jian Hong, Shu Hui Chen
  • Patent number: 11454290
    Abstract: A hydraulic brake caliper piston/plunger tool includes a handle, a barrel with rear and front tubes, and a shaft. The handle is provided therein with a fluid reservoir and a fluid chamber, and pivotally connected with an operation lever having a plunger inserted into the fluid chamber. The shaft is attached with a piston and fitted through the rear tube, the barrel and the front tube. A return spring is fitted around the shaft in a central hole of the barrel, between the piston and the front tube. A front end of the shaft is adapted to be fitted with an accessory for a disc brake. A rear end of the shaft is adapted to be connected with a turning tool. In use, alternately depressing and releasing the operation lever enables fluid to enter the central hole of the barrel to have the piston together with the shaft moved forward.
    Type: Grant
    Filed: May 9, 2019
    Date of Patent: September 27, 2022
    Inventors: Shu-Hui Chen, Oliver Sir
  • Publication number: 20220280455
    Abstract: The present invention provides novel compounds which activate the Kv7 potassium channels. Separate aspects of the invention are directed to pharmaceutical compositions comprising said compounds and uses of the compounds to treat disorders responsive to the activation of Kv7 potassium channels.
    Type: Application
    Filed: July 30, 2020
    Publication date: September 8, 2022
    Applicant: H. Lundbeck A/S
    Inventors: Anette Graven Sams, Mario Rottlãnder, Xiaofang Wang, Debasis Das, Jian Hong, Shu Hui Chen, Jesper Frank Bastlund, Jelena Ivkovic, Karina Krøjer Søby, Morten Grupe Larsen
  • Patent number: 11434199
    Abstract: The present invention provides novel compounds which activate the Kv7 potassium channels. Separate aspects of the invention are directed to pharmaceutical compositions comprising said compounds and uses of the compounds to treat disorders responsive to the activation of Kv7 potassium channels.
    Type: Grant
    Filed: February 4, 2020
    Date of Patent: September 6, 2022
    Assignee: H. Lundbeck A/S
    Inventors: Mario Rottlander, Anette Graven Sams, Xiaofang Wang, Debasis Das, Jian Hong, Shu Hui Chen
  • Publication number: 20220273735
    Abstract: The invention provides a method of increasing an amount of oral immunoglobulin A (IgA) and/or inhibiting oral pathogens in a subject in need thereof, which utilizes a composition including a therapeutically effective amount of probiotics as an effective ingredient. The probiotics include Lactobacillus plantarum LPL28, which can efficiently increase the amount of oral IgA and/or inhibit the oral pathogens, and thus have a potential to prevent teeth cavities and/or periodontal diseases.
    Type: Application
    Filed: October 27, 2021
    Publication date: September 1, 2022
    Inventors: Hsieh-Hsun Ho, Wen-Yang Lin, Yi-Wei Kuo, Yen-Yu Huang, Jia-Hung Lin, Chi-Huei Lin, Cheng-Ruei Liu, Shu-Hui Chen