Patents by Inventor SHU-JUI CHANG

SHU-JUI CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12211789
    Abstract: A method includes following steps. First transistors are formed over a substrate. An interconnect structure is formed over the plurality of first transistors. A dielectric layer is formed over the interconnect structure. 2D semiconductor seeds are formed over the dielectric layer. The 2D semiconductor seeds are annealed. An epitaxy process is performed to laterally grow a plurality of 2D semiconductor films respectively from the plurality of 2D semiconductor seeds. Second transistors are formed on the plurality of 2D semiconductor films.
    Type: Grant
    Filed: July 31, 2023
    Date of Patent: January 28, 2025
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Chenming Hu, Shu-Jui Chang, Chen-Han Chou, Yen-Teng Ho, Chia-Hsing Wu, Kai-Yu Peng, Cheng-Hung Shen
  • Publication number: 20240395698
    Abstract: A method includes following steps. A dielectric layer is formed over a substrate. A transition metal-containing layer is deposited on the dielectric layer. The transition metal-containing layer is patterned into a plurality of transition metal-containing pieces. The transition metal-containing pieces are sulfurized or selenized to form a plurality of semiconductor seeds. Semiconductor films are grown from semiconductor seeds. Transistors are formed on the semiconductor films.
    Type: Application
    Filed: July 30, 2024
    Publication date: November 28, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Chenming HU, Shu-Jui CHANG, Chen-Han CHOU, Yen-Teng HO, Chia-Hsing WU, Kai-Yu PENG, Cheng-Hung SHEN
  • Publication number: 20240363343
    Abstract: A method includes following steps. A single-crystalline two-dimensional (2D) semiconductor layer is formed over a substrate. A single-crystalline 2D material layer is epitaxially grown on the single-crystalline 2D semiconductor layer. The single-crystalline 2D material layer is lattice-matched with the single-crystalline 2D semiconductor layer. A semiconductor device is over the single-crystalline 2D semiconductor layer.
    Type: Application
    Filed: April 27, 2023
    Publication date: October 31, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., National Yang Ming Chiao Tung University
    Inventors: Shu-Jui CHANG, Shin-Yuan WANG, Yu-Che HUANG, Chao-Hsin CHIEN, Chenming HU
  • Publication number: 20240347340
    Abstract: An epitaxial structure includes a substrate and a dielectric layer. The dielectric layer is on the substrate. The substrate comprises a single crystal metal or a single crystal 2D material. The dielectric layer is in physical contact with the substrate. The dielectric layer comprises a non-perovskite structure with defined grain orientation with ferroelectric (FE) phase or antiferroelectric (AFE) phase.
    Type: Application
    Filed: April 12, 2023
    Publication date: October 17, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Shu-Jui CHANG, Shin-Yuan WANG, Yu-Che HUANG, Chao-Hsin CHIEN, Chenming HU
  • Publication number: 20240241155
    Abstract: A probe card includes a structure stiffener unit including a base with a lower surface where central and peripheral supporting elements protrude out and a main circuit board is fixed, a space transformer and a probe head disposed thereunder, which are disposed to the supporting elements by bolts and defined with central and peripheral regions located correspondingly to the central and peripheral supporting elements respectively, and a metal supporting member fixed on the space transformer in a direct contact manner and located correspondingly to the central region. The supporting member has a lower surface coplanar with the lower end surface of the peripheral supporting element, which is abutted on the space transformer, and an upper surface against which the central supporting element is abutted. The space transformer has great structural strength, flatness and heat dissipation effect for satisfying the large-area requirement and great electrical property testing stability.
    Type: Application
    Filed: January 10, 2024
    Publication date: July 18, 2024
    Applicant: MPI CORPORATION
    Inventors: CHIN-YI LIN, CHE-WEI LIN, HSUEH-CHIH WU, TSUNG-YI CHEN, SHANG-JUNG HSIEH, SHENG-YU LIN, CHIEN-KAI HUNG, SHENG-WEI LIN, SHU-JUI CHANG
  • Publication number: 20230378056
    Abstract: A method includes following steps. First transistors are formed over a substrate. An interconnect structure is formed over the plurality of first transistors. A dielectric layer is formed over the interconnect structure. 2D semiconductor seeds are formed over the dielectric layer. The 2D semiconductor seeds are annealed. An epitaxy process is performed to laterally grow a plurality of 2D semiconductor films respectively from the plurality of 2D semiconductor seeds. Second transistors are formed on the plurality of 2D semiconductor films.
    Type: Application
    Filed: July 31, 2023
    Publication date: November 23, 2023
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Chenming HU, Shu-Jui CHANG, Chen-Han CHOU, Yen-Teng HO, Chia-Hsing WU, Kai-Yu PENG, Cheng-Hung SHEN
  • Publication number: 20230327007
    Abstract: A method includes forming a 2-D material layer over a substrate, wherein the 2-D material layer comprises transition metal atoms and chalcogen atoms; forming a gate structure over the 2-D material layer; supplying chemical molecules to the 2-D material layer, such that atoms of the chemical molecules react with portions of the chalcogen atoms to weaken covalent bonds between the portions of the chalcogen atoms and the transition metal atoms; and forming source/drain contacts over the 2-D material layer, wherein contact metal atoms of the source/drain contacts form metallic bonds with the transition metal atoms of the 2-D material layer.
    Type: Application
    Filed: June 13, 2023
    Publication date: October 12, 2023
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., National Yang Ming Chiao Tung University
    Inventors: Shu-Jui CHANG, Shin-Yuan WANG, Yu-Che HUANG, Chun-Liang LIN, Chao-Hsin CHIEN, Chenming HU
  • Patent number: 11784119
    Abstract: An IC structure comprises a first transistor formed on a substrate, a first interconnect structure over the first transistor, a dielectric layer over the first interconnect structure, a plurality of 2D semiconductor islands on the dielectric layer, and a plurality of second transistors formed on the plurality of 2D semiconductor islands.
    Type: Grant
    Filed: August 23, 2021
    Date of Patent: October 10, 2023
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Chenming Hu, Shu-Jui Chang, Chen-Han Chou, Yen-Teng Ho, Chia-Hsing Wu, Kai-Yu Peng, Cheng-Hung Shen
  • Publication number: 20230008409
    Abstract: A device comprises a plurality of 2D semiconductor nanostructures, a gate structure, a source region, and a drain region. The plurality of 2D semiconductor nanostructures extend in a first direction above a substrate and arranged in a second direction substantially perpendicular to the first direction. The gate structure surrounds each of the plurality of 2D semiconductor nanostructures. The source region and the drain region are respectively on opposite sides of the gate structure.
    Type: Application
    Filed: March 23, 2022
    Publication date: January 12, 2023
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Chen Han CHOU, Shu-Jui CHANG, Yen-Teng HO, Chia Hsing WU, Kai-Yu PENG, Cheng Hung SHEN, Chenming HU
  • Publication number: 20220319982
    Abstract: An IC structure comprises a first transistor formed on a substrate, a first interconnect structure over the first transistor, a dielectric layer over the first interconnect structure, a plurality of 2D semiconductor islands on the dielectric layer, and a plurality of second transistors formed on the plurality of 2D semiconductor islands.
    Type: Application
    Filed: August 23, 2021
    Publication date: October 6, 2022
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Chenming HU, Shu-Jui CHANG, Chen-Han CHOU, Yen-Teng HO, Chia-Hsing WU, Kai-Yu PENG, Cheng-Hung SHEN
  • Patent number: 11402407
    Abstract: A positionable probe card includes a space transformer, a plurality of positioning pins, and a probe head. The space transformer includes a space transforming substrate, the space transforming substrate includes a plurality of apertures, and the positioning pins are respectively fixed in the apertures. The probe head includes a plurality of positioning holes, and the positioning pins are respectively inserted into corresponding positioning holes. In addition, a method of manufacturing a positionable probe card is also disclosed herein.
    Type: Grant
    Filed: December 10, 2020
    Date of Patent: August 2, 2022
    Assignee: MPI Corporation
    Inventors: Zhi-Wei Su, Tzung-Je Tzeng, Wen-Chi Chen, Huo-Kang Hsu, Hsueh-Chih Wu, Sheng-Wei Lin, Chin-Yi Lin, Che-Wei Lin, Jian-Kai Hong, Shu-Jui Chang
  • Patent number: 11213167
    Abstract: A barbecue grill includes a bowl, a platform, a bracket connected to the bowl, and a coupler connected to the platform and used to engage with the bracket in a detachable manner. A positioning rod is formed on the bracket, and a guiding slit is made in the coupler. The positioning rod is movable in the guiding slit. A restraining aperture is made in the bracket, and a latch is formed on the coupler and movable between an extended position and a withdrawn position. In the extended position, the latch can be inserted in the restraining aperture to engage the coupler with the bracket to keep the platform on the bowl.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: January 4, 2022
    Assignee: REVOACE INC. LIMITED
    Inventor: Shu-Jui Chang
  • Patent number: 11213166
    Abstract: A barbecue grill includes a bowl and a support structure. The bowl includes two connectors and two couplers. Each of the connectors includes an aperture. Each of the couplers includes a latch movable between an extended position and a withdrawn position. The support structure includes two positioning elements and two restraining elements. Each of the positioning elements includes a hook for insertion in the aperture of a corresponding one of the connectors. Each of the restraining elements includes an engagement fin formed with an aperture for receiving the latch of a corresponding one of the couplers in the extended position when the engagement fin is located parallel to the corresponding coupler.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: January 4, 2022
    Assignee: REVOACE INC. LIMITED
    Inventor: Shu-Jui Chang
  • Publication number: 20210181237
    Abstract: A positionable probe card includes a space transformer, a plurality of positioning pins, and a probe head. The space transformer includes a space transforming substrate, the space transforming substrate includes a plurality of apertures, and the positioning pins are respectively fixed in the apertures. The probe head includes a plurality of positioning holes, and the positioning pins are respectively inserted into corresponding positioning holes. In addition, a method of manufacturing a positionable probe card is also disclosed herein.
    Type: Application
    Filed: December 10, 2020
    Publication date: June 17, 2021
    Inventors: Zhi-Wei SU, Tzung-Je TZENG, Wen-Chi CHEN, Huo-Kang HSU, Hsueh-Chih WU, Sheng-Wei LIN, Chin-Yi LIN, Che-Wei LIN, Jian-Kai HONG, Shu-Jui CHANG
  • Publication number: 20210038023
    Abstract: A barbecue grill includes a bowl, a platform, a bracket connected to the bowl, and a coupler connected to the platform and used to engage with the bracket in a detachable manner. A positioning rod is formed on the bracket, and a guiding slit is made in the coupler. The positioning rod is movable in the guiding slit. A restraining aperture is made in the bracket, and a latch is formed on the coupler and movable between an extended position and a withdrawn position. In the extended position, the latch can be inserted in the restraining aperture to engage the coupler with the bracket to keep the platform on the bowl.
    Type: Application
    Filed: August 6, 2019
    Publication date: February 11, 2021
    Inventor: SHU-JUI CHANG
  • Publication number: 20200390278
    Abstract: A barbecue grill includes a bowl and a support structure. The bowl includes two connectors and two couplers. Each of the connectors includes an aperture. Each of the couplers includes a latch movable between an extended position and a withdrawn position. The support structure includes two positioning elements and two restraining elements. Each of the positioning elements includes a hook for insertion in the aperture of a corresponding one of the connectors. Each of the restraining elements includes an engagement fin formed with an aperture for receiving the latch of a corresponding one of the couplers in the extended position when the engagement fin is located parallel to the corresponding coupler.
    Type: Application
    Filed: June 17, 2019
    Publication date: December 17, 2020
    Inventor: Shu-Jui Chang
  • Patent number: 10024542
    Abstract: A grill stove contains a grilling body and plural heating devices. Each grilling device includes a first heat tube, a second heat tube, an accommodation seat, and a valve unit. The accommodation seat has a first conduit, a second conduit, a gas supply tube, and a dispersion tube. The valve unit has a driving shaft and a control valve, the driving shaft extends out of the accommodation seat and is in connection with a first end of the control valve, and a second end of the valve unit inserts into the first conduit. The control valve has a channel, a first through orifice, a second through orifice, and a third through orifice. The control valve is rotated to stop the gas supply tube, to communicate with the gas supply tube via the first through orifice or to communicate with the gas supply tube via the second through orifice.
    Type: Grant
    Filed: November 16, 2015
    Date of Patent: July 17, 2018
    Inventor: Shu-Jui Chang
  • Patent number: 10001154
    Abstract: A connecting structure for a barbecue grill contains: a grilling device, a base, and plural coupling assemblies for connecting the base. The base including a first side plate, a second side plate, a bottom plate, a back plate, a front door, and a pull bar. Each coupling assembly includes a holder and a positioning piece, the holder has a joining element, and the joining element has a circular head portion and a circular extension. The positioning piece has a groove with a wide area and a narrow area, and the bottom plate also has an orifice, the second side plate has an aperture to correspond to the orifice. The front door has another aperture formed on a top edge of a right side thereof and has another orifice formed on a bottom edge of the right side thereof, such that two shafts are connected with another aperture and another orifice.
    Type: Grant
    Filed: January 16, 2015
    Date of Patent: June 19, 2018
    Assignee: REVOACE INC.
    Inventor: Shu-Jui Chang
  • Patent number: D814225
    Type: Grant
    Filed: December 7, 2015
    Date of Patent: April 3, 2018
    Inventor: Shu-Jui Chang
  • Patent number: D921430
    Type: Grant
    Filed: October 21, 2019
    Date of Patent: June 8, 2021
    Inventor: Shu-Jui Chang