Patents by Inventor SHU-JUI CHANG
SHU-JUI CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12211789Abstract: A method includes following steps. First transistors are formed over a substrate. An interconnect structure is formed over the plurality of first transistors. A dielectric layer is formed over the interconnect structure. 2D semiconductor seeds are formed over the dielectric layer. The 2D semiconductor seeds are annealed. An epitaxy process is performed to laterally grow a plurality of 2D semiconductor films respectively from the plurality of 2D semiconductor seeds. Second transistors are formed on the plurality of 2D semiconductor films.Type: GrantFiled: July 31, 2023Date of Patent: January 28, 2025Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Chenming Hu, Shu-Jui Chang, Chen-Han Chou, Yen-Teng Ho, Chia-Hsing Wu, Kai-Yu Peng, Cheng-Hung Shen
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Publication number: 20240395698Abstract: A method includes following steps. A dielectric layer is formed over a substrate. A transition metal-containing layer is deposited on the dielectric layer. The transition metal-containing layer is patterned into a plurality of transition metal-containing pieces. The transition metal-containing pieces are sulfurized or selenized to form a plurality of semiconductor seeds. Semiconductor films are grown from semiconductor seeds. Transistors are formed on the semiconductor films.Type: ApplicationFiled: July 30, 2024Publication date: November 28, 2024Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Chenming HU, Shu-Jui CHANG, Chen-Han CHOU, Yen-Teng HO, Chia-Hsing WU, Kai-Yu PENG, Cheng-Hung SHEN
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Publication number: 20240363343Abstract: A method includes following steps. A single-crystalline two-dimensional (2D) semiconductor layer is formed over a substrate. A single-crystalline 2D material layer is epitaxially grown on the single-crystalline 2D semiconductor layer. The single-crystalline 2D material layer is lattice-matched with the single-crystalline 2D semiconductor layer. A semiconductor device is over the single-crystalline 2D semiconductor layer.Type: ApplicationFiled: April 27, 2023Publication date: October 31, 2024Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., National Yang Ming Chiao Tung UniversityInventors: Shu-Jui CHANG, Shin-Yuan WANG, Yu-Che HUANG, Chao-Hsin CHIEN, Chenming HU
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Publication number: 20240347340Abstract: An epitaxial structure includes a substrate and a dielectric layer. The dielectric layer is on the substrate. The substrate comprises a single crystal metal or a single crystal 2D material. The dielectric layer is in physical contact with the substrate. The dielectric layer comprises a non-perovskite structure with defined grain orientation with ferroelectric (FE) phase or antiferroelectric (AFE) phase.Type: ApplicationFiled: April 12, 2023Publication date: October 17, 2024Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Shu-Jui CHANG, Shin-Yuan WANG, Yu-Che HUANG, Chao-Hsin CHIEN, Chenming HU
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Publication number: 20240241155Abstract: A probe card includes a structure stiffener unit including a base with a lower surface where central and peripheral supporting elements protrude out and a main circuit board is fixed, a space transformer and a probe head disposed thereunder, which are disposed to the supporting elements by bolts and defined with central and peripheral regions located correspondingly to the central and peripheral supporting elements respectively, and a metal supporting member fixed on the space transformer in a direct contact manner and located correspondingly to the central region. The supporting member has a lower surface coplanar with the lower end surface of the peripheral supporting element, which is abutted on the space transformer, and an upper surface against which the central supporting element is abutted. The space transformer has great structural strength, flatness and heat dissipation effect for satisfying the large-area requirement and great electrical property testing stability.Type: ApplicationFiled: January 10, 2024Publication date: July 18, 2024Applicant: MPI CORPORATIONInventors: CHIN-YI LIN, CHE-WEI LIN, HSUEH-CHIH WU, TSUNG-YI CHEN, SHANG-JUNG HSIEH, SHENG-YU LIN, CHIEN-KAI HUNG, SHENG-WEI LIN, SHU-JUI CHANG
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Publication number: 20230378056Abstract: A method includes following steps. First transistors are formed over a substrate. An interconnect structure is formed over the plurality of first transistors. A dielectric layer is formed over the interconnect structure. 2D semiconductor seeds are formed over the dielectric layer. The 2D semiconductor seeds are annealed. An epitaxy process is performed to laterally grow a plurality of 2D semiconductor films respectively from the plurality of 2D semiconductor seeds. Second transistors are formed on the plurality of 2D semiconductor films.Type: ApplicationFiled: July 31, 2023Publication date: November 23, 2023Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Chenming HU, Shu-Jui CHANG, Chen-Han CHOU, Yen-Teng HO, Chia-Hsing WU, Kai-Yu PENG, Cheng-Hung SHEN
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Publication number: 20230327007Abstract: A method includes forming a 2-D material layer over a substrate, wherein the 2-D material layer comprises transition metal atoms and chalcogen atoms; forming a gate structure over the 2-D material layer; supplying chemical molecules to the 2-D material layer, such that atoms of the chemical molecules react with portions of the chalcogen atoms to weaken covalent bonds between the portions of the chalcogen atoms and the transition metal atoms; and forming source/drain contacts over the 2-D material layer, wherein contact metal atoms of the source/drain contacts form metallic bonds with the transition metal atoms of the 2-D material layer.Type: ApplicationFiled: June 13, 2023Publication date: October 12, 2023Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., National Yang Ming Chiao Tung UniversityInventors: Shu-Jui CHANG, Shin-Yuan WANG, Yu-Che HUANG, Chun-Liang LIN, Chao-Hsin CHIEN, Chenming HU
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Patent number: 11784119Abstract: An IC structure comprises a first transistor formed on a substrate, a first interconnect structure over the first transistor, a dielectric layer over the first interconnect structure, a plurality of 2D semiconductor islands on the dielectric layer, and a plurality of second transistors formed on the plurality of 2D semiconductor islands.Type: GrantFiled: August 23, 2021Date of Patent: October 10, 2023Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Chenming Hu, Shu-Jui Chang, Chen-Han Chou, Yen-Teng Ho, Chia-Hsing Wu, Kai-Yu Peng, Cheng-Hung Shen
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Publication number: 20230008409Abstract: A device comprises a plurality of 2D semiconductor nanostructures, a gate structure, a source region, and a drain region. The plurality of 2D semiconductor nanostructures extend in a first direction above a substrate and arranged in a second direction substantially perpendicular to the first direction. The gate structure surrounds each of the plurality of 2D semiconductor nanostructures. The source region and the drain region are respectively on opposite sides of the gate structure.Type: ApplicationFiled: March 23, 2022Publication date: January 12, 2023Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Chen Han CHOU, Shu-Jui CHANG, Yen-Teng HO, Chia Hsing WU, Kai-Yu PENG, Cheng Hung SHEN, Chenming HU
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Publication number: 20220319982Abstract: An IC structure comprises a first transistor formed on a substrate, a first interconnect structure over the first transistor, a dielectric layer over the first interconnect structure, a plurality of 2D semiconductor islands on the dielectric layer, and a plurality of second transistors formed on the plurality of 2D semiconductor islands.Type: ApplicationFiled: August 23, 2021Publication date: October 6, 2022Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Chenming HU, Shu-Jui CHANG, Chen-Han CHOU, Yen-Teng HO, Chia-Hsing WU, Kai-Yu PENG, Cheng-Hung SHEN
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Patent number: 11402407Abstract: A positionable probe card includes a space transformer, a plurality of positioning pins, and a probe head. The space transformer includes a space transforming substrate, the space transforming substrate includes a plurality of apertures, and the positioning pins are respectively fixed in the apertures. The probe head includes a plurality of positioning holes, and the positioning pins are respectively inserted into corresponding positioning holes. In addition, a method of manufacturing a positionable probe card is also disclosed herein.Type: GrantFiled: December 10, 2020Date of Patent: August 2, 2022Assignee: MPI CorporationInventors: Zhi-Wei Su, Tzung-Je Tzeng, Wen-Chi Chen, Huo-Kang Hsu, Hsueh-Chih Wu, Sheng-Wei Lin, Chin-Yi Lin, Che-Wei Lin, Jian-Kai Hong, Shu-Jui Chang
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Patent number: 11213167Abstract: A barbecue grill includes a bowl, a platform, a bracket connected to the bowl, and a coupler connected to the platform and used to engage with the bracket in a detachable manner. A positioning rod is formed on the bracket, and a guiding slit is made in the coupler. The positioning rod is movable in the guiding slit. A restraining aperture is made in the bracket, and a latch is formed on the coupler and movable between an extended position and a withdrawn position. In the extended position, the latch can be inserted in the restraining aperture to engage the coupler with the bracket to keep the platform on the bowl.Type: GrantFiled: August 6, 2019Date of Patent: January 4, 2022Assignee: REVOACE INC. LIMITEDInventor: Shu-Jui Chang
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Patent number: 11213166Abstract: A barbecue grill includes a bowl and a support structure. The bowl includes two connectors and two couplers. Each of the connectors includes an aperture. Each of the couplers includes a latch movable between an extended position and a withdrawn position. The support structure includes two positioning elements and two restraining elements. Each of the positioning elements includes a hook for insertion in the aperture of a corresponding one of the connectors. Each of the restraining elements includes an engagement fin formed with an aperture for receiving the latch of a corresponding one of the couplers in the extended position when the engagement fin is located parallel to the corresponding coupler.Type: GrantFiled: June 17, 2019Date of Patent: January 4, 2022Assignee: REVOACE INC. LIMITEDInventor: Shu-Jui Chang
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Publication number: 20210181237Abstract: A positionable probe card includes a space transformer, a plurality of positioning pins, and a probe head. The space transformer includes a space transforming substrate, the space transforming substrate includes a plurality of apertures, and the positioning pins are respectively fixed in the apertures. The probe head includes a plurality of positioning holes, and the positioning pins are respectively inserted into corresponding positioning holes. In addition, a method of manufacturing a positionable probe card is also disclosed herein.Type: ApplicationFiled: December 10, 2020Publication date: June 17, 2021Inventors: Zhi-Wei SU, Tzung-Je TZENG, Wen-Chi CHEN, Huo-Kang HSU, Hsueh-Chih WU, Sheng-Wei LIN, Chin-Yi LIN, Che-Wei LIN, Jian-Kai HONG, Shu-Jui CHANG
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Publication number: 20210038023Abstract: A barbecue grill includes a bowl, a platform, a bracket connected to the bowl, and a coupler connected to the platform and used to engage with the bracket in a detachable manner. A positioning rod is formed on the bracket, and a guiding slit is made in the coupler. The positioning rod is movable in the guiding slit. A restraining aperture is made in the bracket, and a latch is formed on the coupler and movable between an extended position and a withdrawn position. In the extended position, the latch can be inserted in the restraining aperture to engage the coupler with the bracket to keep the platform on the bowl.Type: ApplicationFiled: August 6, 2019Publication date: February 11, 2021Inventor: SHU-JUI CHANG
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Publication number: 20200390278Abstract: A barbecue grill includes a bowl and a support structure. The bowl includes two connectors and two couplers. Each of the connectors includes an aperture. Each of the couplers includes a latch movable between an extended position and a withdrawn position. The support structure includes two positioning elements and two restraining elements. Each of the positioning elements includes a hook for insertion in the aperture of a corresponding one of the connectors. Each of the restraining elements includes an engagement fin formed with an aperture for receiving the latch of a corresponding one of the couplers in the extended position when the engagement fin is located parallel to the corresponding coupler.Type: ApplicationFiled: June 17, 2019Publication date: December 17, 2020Inventor: Shu-Jui Chang
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Patent number: 10024542Abstract: A grill stove contains a grilling body and plural heating devices. Each grilling device includes a first heat tube, a second heat tube, an accommodation seat, and a valve unit. The accommodation seat has a first conduit, a second conduit, a gas supply tube, and a dispersion tube. The valve unit has a driving shaft and a control valve, the driving shaft extends out of the accommodation seat and is in connection with a first end of the control valve, and a second end of the valve unit inserts into the first conduit. The control valve has a channel, a first through orifice, a second through orifice, and a third through orifice. The control valve is rotated to stop the gas supply tube, to communicate with the gas supply tube via the first through orifice or to communicate with the gas supply tube via the second through orifice.Type: GrantFiled: November 16, 2015Date of Patent: July 17, 2018Inventor: Shu-Jui Chang
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Patent number: 10001154Abstract: A connecting structure for a barbecue grill contains: a grilling device, a base, and plural coupling assemblies for connecting the base. The base including a first side plate, a second side plate, a bottom plate, a back plate, a front door, and a pull bar. Each coupling assembly includes a holder and a positioning piece, the holder has a joining element, and the joining element has a circular head portion and a circular extension. The positioning piece has a groove with a wide area and a narrow area, and the bottom plate also has an orifice, the second side plate has an aperture to correspond to the orifice. The front door has another aperture formed on a top edge of a right side thereof and has another orifice formed on a bottom edge of the right side thereof, such that two shafts are connected with another aperture and another orifice.Type: GrantFiled: January 16, 2015Date of Patent: June 19, 2018Assignee: REVOACE INC.Inventor: Shu-Jui Chang
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Patent number: D814225Type: GrantFiled: December 7, 2015Date of Patent: April 3, 2018Inventor: Shu-Jui Chang
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Patent number: D921430Type: GrantFiled: October 21, 2019Date of Patent: June 8, 2021Inventor: Shu-Jui Chang