Abstract: The present techniques relate to various aspects of forming and filling high-aspect ratio trench structures (e.g., trench structures having an aspect ratio of 20 or greater, including aspect ratios in the range of 20:1 up to and including 50:1 or greater) combined with trench opening widths ranging from 0.5 micron to 50 microns. By way of example, patterned substrate described herein includes a substrate, a mask layer deposited on the substrate, and a photoresist layer deposited on the mask layer. The photoresist layer is patterned to form a pattern and the mask layer is etched through the pattern to expose the substrate. The substrate is etched through the pattern to form a structure comprising a plurality of trenches having vertical sidewall. The photoresist layer remains on the mask layer during etching of the substrate.

Abstract: A method for forming a multi-layered, stacked grid structure includes aligning a first grid structure with a second grid structure, wherein both the first grid structure and the second grid structure each include a substrate in which a plurality of trenches are formed and a cured carrier fluid disposed within the plurality of trenches, and wherein a plurality of nano-particles are suspended within the cured carrier fluid. The method also includes, upon aligning the first grid structure and the second grid structure so that their respective plurality of trenches are aligned in the same orientation, joining the first grid structure and the second grid structure together to form the multi-layered, stacked grid structure.

Abstract: A method for forming a multi-layered, stacked grid structure includes aligning a first grid structure with a second grid structure, wherein both the first grid structure and the second grid structure each include a substrate in which a plurality of trenches are formed and a cured carrier fluid disposed within the plurality of trenches, and wherein a plurality of nano-particles are suspended within the cured carrier fluid. The method also includes, upon aligning the first grid structure and the second grid structure so that their respective plurality of trenches are aligned in the same orientation, joining the first grid structure and the second grid structure together to form the multi-layered, stacked grid structure.

Abstract: The present techniques relate to various aspects of forming and filling high-aspect ratio trench structures (e.g., trench structures having an aspect ratio of 20 or greater, including aspect ratios in the range of 20:1 up to and including 50:1 or greater) combined with trench opening widths ranging from 0.5 micron to 50 microns. In one implementation a method to fabricate high-aspect ratio trenches in silicon is provided using a patterned photoresist on evaporated aluminum. In accordance with this approach, a high-aspect ratio trench can be formed having vertical side walls and defect-free trench bottoms. In some instances it may be desirable to fill such high-aspect ratio trench structures with a metal or other substrate to provide certain functionality associated with the fill material. Further processes and structures are related in which such trench structures are filled using a mixture of high-Z nano-particles within an epoxy resin matrix.