Patents by Inventor Shuhei Yoshitomi

Shuhei Yoshitomi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10249876
    Abstract: A lithium-ion secondary battery with high capacity is provided. Alternatively, a lithium-ion secondary battery with unproved cycle characteristics is provided. To achieve this, an active material including a particle having a cleavage plane and a layer containing carbon covering at least part of the cleavage plane is provided. The particle having the cleavage plane contains lithium, manganese, nickel, and oxygen. The layer containing carbon preferably contains graphene. When a lithium-ion secondary battery is fabricated using an electrode including the particle having the cleavage plane at least part of which is covered with the layer containing carbon as an active material, the discharge capacity can be increased and the cycle characteristics can be improved.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: April 2, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Kawakami, Tatsuya Ikenuma, Teruaki Ochiai, Shuhei Yoshitomi, Mako Motoyoshi, Hiroyuki Miyake, Yohei Momma, Takuya Hirohashi, Satoshi Seo
  • Publication number: 20180366726
    Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.
    Type: Application
    Filed: August 28, 2018
    Publication date: December 20, 2018
    Inventors: Takahiro KAWAKAMI, Teruaki OCHIAI, Shuhei YOSHITOMI, Takuya HIROHASHI, Mako MOTOYOSHI, Yohei MOMMA, Junya GOTO
  • Patent number: 10084186
    Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.
    Type: Grant
    Filed: October 22, 2015
    Date of Patent: September 25, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Kawakami, Teruaki Ochiai, Shuhei Yoshitomi, Takuya Hirohashi, Mako Motoyoshi, Yohei Momma, Junya Goto
  • Publication number: 20180175386
    Abstract: A lithium-ion secondary battery with high capacity is provided. Alternatively, a lithium-ion secondary battery with unproved cycle characteristics is provided. To achieve this, an active material including a particle having a cleavage plane and a layer containing carbon covering at least part of the cleavage plane is provided. The particle having the cleavage plane contains lithium, manganese, nickel, and oxygen. The layer containing carbon preferably contains graphene. When a lithium-ion secondary battery is fabricated using an electrode including the particle having the cleavage plane at least part of which is covered with the layer containing carbon as an active material, the discharge capacity can be increased and the cycle characteristics can be improved.
    Type: Application
    Filed: January 18, 2018
    Publication date: June 21, 2018
    Inventors: Takahiro KAWAKAMI, Tatsuya IKENUMA, Teruaki OCHIAI, Shuhei YOSHITOMI, Mako MOTOYOSHI, Hiroyuki MIYAKE, Yohei MOMMA, Takuya HIROHASHI, Satoshi SEO
  • Patent number: 9882211
    Abstract: A lithium-ion secondary battery with high capacity is provided. Alternatively, a lithium-ion secondary battery with improved cycle characteristics is provided. To achieve this, an active material including a particle having a cleavage plane and a layer containing carbon covering at least part of the cleavage plane is provided. The particle having the cleavage plane contains lithium, manganese, nickel, and oxygen. The layer containing carbon preferably contains graphene. When a lithium-ion secondary battery is fabricated using an electrode including the particle having the cleavage plane at least part of which is covered with the layer containing carbon as an active material, the discharge capacity can be increased and the cycle characteristics can be improved.
    Type: Grant
    Filed: May 5, 2015
    Date of Patent: January 30, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Kawakami, Tatsuya Ikenuma, Teruaki Ochiai, Shuhei Yoshitomi, Mako Motoyoshi, Hiroyuki Miyake, Yohei Momma, Takuya Hirohashi, Satoshi Seo
  • Publication number: 20170317346
    Abstract: To increase the volume density or weight density of lithium ions that can be received and released in and from a positive electrode active material to achieve high capacity and high energy density of a secondary battery. A lithium manganese composite oxide represented by LixMnyMzOw that includes a region belonging to a space group C2/c and is covered with a carbon-containing layer is used as the positive electrode active material. The element M is an element other than lithium and manganese. The lithium manganese composite oxide has high structural stability and high capacity.
    Type: Application
    Filed: July 13, 2017
    Publication date: November 2, 2017
    Inventors: Tatsuya IKENUMA, Shuhei YOSHITOMI, Takahiro KAWAKAMI, Yumiko YONEDA, Yohei MOMMA
  • Patent number: 9774034
    Abstract: To increase the amount of lithium ions that can be received in and released from a positive electrode active material to achieve high capacity and high energy density of a secondary battery. A lithium manganese oxide particle includes a first region and a second region. The valence number of manganese in the first region is lower than the valence number of manganese in the second region. The lithium manganese oxide has high structural stability and high capacity characteristics.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: September 26, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Kawakami, Mayumi Mikami, Shunsuke Adachi, Shuhei Yoshitomi, Teruaki Ochiai, Yumiko Yoneda, Yohei Momma, Satoshi Seo
  • Publication number: 20170269440
    Abstract: A high-definition liquid crystal display device is provided. A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with a high contrast ratio and display quality is provided. A liquid crystal display device capable of being driven at a low voltage is provided. The display device includes, between a pair of substrates, a pixel electrode, a first common electrode, a second common electrode, and a liquid crystal layer. The pixel electrode and the first common electrode are positioned between the liquid crystal layer and one of the substrates. The second common electrode is positioned between the liquid crystal layer and the other substrate. The same potential is supplied to the first common electrode and the second common electrode. The first common electrode includes a portion overlapping with the second common electrode between the display regions of two adjacent subpixels that exhibit different colors.
    Type: Application
    Filed: March 10, 2017
    Publication date: September 21, 2017
    Inventors: Shuhei YOSHITOMI, Daisuke KUBOTA, Koji KUSUNOKI
  • Patent number: 9768207
    Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: September 19, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masashi Tsubuku, Shuhei Yoshitomi, Takahiro Tsuji, Miyuki Hosoba, Junichiro Sakata, Hiroyuki Tomatsu, Masahiko Hayakawa
  • Patent number: 9748401
    Abstract: Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping with part of the oxide semiconductor layer with the gate insulating layer provided therebetween, wherein, after the oxide semiconductor layer which is to be a channel formation region is irradiated with light and the light irradiation is stopped, a relaxation time of carriers in photoresponse characteristics of the oxide semiconductor layer has at least two kinds of modes: ?1 and ?2, ?1<?2 is satisfied, and ?2 is 300 seconds or less. In addition, a semiconductor device including the transistor is manufactured.
    Type: Grant
    Filed: November 19, 2014
    Date of Patent: August 29, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masashi Tsubuku, Takayuki Inoue, Suzunosuke Hiraishi, Erumu Kikuchi, Hiromichi Godo, Shuhei Yoshitomi, Koki Inoue, Akiharu Miyanaga, Shunpei Yamazaki
  • Patent number: 9666326
    Abstract: To increase the amount of lithium ions that can be received and released in and from a positive electrode active material to achieve high capacity and high energy density of a secondary battery. A composite material of crystallites of LiMn2O4 (crystallites with a spinel crystal structure) and crystallites of Li2MnO3 (crystallites with a layered rock-salt crystal structure) is used as a positive electrode active material. The lithium manganese oxide composite has high structural stability and high capacity.
    Type: Grant
    Filed: May 8, 2014
    Date of Patent: May 30, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Kawakami, Shuhei Yoshitomi, Teruaki Ochiai, Satoshi Seo, Yohei Momma, Yumiko Saito
  • Patent number: 9530806
    Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.
    Type: Grant
    Filed: October 23, 2014
    Date of Patent: December 27, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masashi Tsubuku, Shuhei Yoshitomi, Takahiro Tsuji, Miyuki Hosoba, Junichiro Sakata, Hiroyuki Tomatsu, Masahiko Hayakawa
  • Publication number: 20160329359
    Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.
    Type: Application
    Filed: July 22, 2016
    Publication date: November 10, 2016
    Inventors: Masashi TSUBUKU, Shuhei YOSHITOMI, Takahiro TSUJI, Miyuki HOSOBA, Junichiro SAKATA, Hiroyuki TOMATSU, Masahiko HAYAKAWA
  • Patent number: 9406706
    Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.
    Type: Grant
    Filed: October 23, 2014
    Date of Patent: August 2, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masashi Tsubuku, Shuhei Yoshitomi, Takahiro Tsuji, Miyuki Hosoba, Junichiro Sakata, Hiroyuki Tomatsu, Masahiko Hayakawa
  • Publication number: 20160164089
    Abstract: The amount of lithium ions that can be received and released in and from a positive electrode active material is increased, and high capacity and high energy density of a secondary battery are achieved. Provided is a lithium-manganese composite oxide represented by LixMnyMzOw, where M is a metal element other than Li and Mn, or Si or P, and y, z, and w satisfy 0?x/(y+z)<2, y>0, z>0, 0.26?(y+z)/w<0.5, and 0.2<z/y<1.2. The lithium manganese composite oxide has high structural stability and high capacity.
    Type: Application
    Filed: February 10, 2016
    Publication date: June 9, 2016
    Inventors: Takahiro KAWAKAMI, Shuhei YOSHITOMI, Teruaki OCHIAI, Yumiko SAITO, Yohei MOMMA, Satoshi SEO, Mayumi MIKAMI, Shunsuke ADACHI
  • Publication number: 20160118658
    Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.
    Type: Application
    Filed: October 22, 2015
    Publication date: April 28, 2016
    Inventors: Takahiro KAWAKAMI, Teruaki OCHIAI, Shuhei YOSHITOMI, Takuya HIROHASHI, Mako MOTOYOSHI, Yohei MOMMA, Junya GOTO
  • Patent number: 9293236
    Abstract: The amount of lithium ions that can be received and released in and from a positive electrode active material is increased, and high capacity and high energy density of a secondary battery are achieved. Provided is a lithium-manganese composite oxide represented by LixMnyMzOw, where M is a metal element other than Li and Mn, or Si or P, and y, z, and w satisfy 0?x/(y+z)<2, y>0, z>0, 0.26?(y+z)/w<0.5, and 0.2<z/y<1.2. The lithium manganese composite oxide has high structural stability and high capacity.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: March 22, 2016
    Assignee: SEMIDONCONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takahiro Kawakami, Shuhei Yoshitomi, Teruaki Ochiai, Yumiko Saito, Yohei Momma, Satoshi Seo, Mayumi Mikami, Shunsuke Adachi
  • Patent number: 9136188
    Abstract: Provided is a test method by which a transistor whose reliability is low can be detected with low stress and high accuracy in a shorter period of time than a BT test. Provided is to detect a transistor whose reliability is high in a shorter period of time than a BT test and manufacture an electronic device with high reliability efficiently. Hysteresis characteristics revealed in the result of the Vg-Id measurement with light irradiation to the transistor correlate with the result of a BT test; whether the reliability of the transistor is Good or Not-Good can be judged. Accordingly, the test method by which a transistor whose reliability is low can be detected with low stress and high accuracy in a shorter period of time than a BT test can be provided.
    Type: Grant
    Filed: December 2, 2014
    Date of Patent: September 15, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiromichi Godo, Shuhei Yoshitomi
  • Publication number: 20150155556
    Abstract: To increase the amount of lithium ions that can be received in and released from a positive electrode active material to achieve high capacity and high energy density of a secondary battery. A lithium manganese oxide particle includes a first region and a second region. The valence number of manganese in the first region is lower than the valence number of manganese in the second region. The lithium manganese oxide has high structural stability and high capacity characteristics.
    Type: Application
    Filed: November 25, 2014
    Publication date: June 4, 2015
    Inventors: Takahiro KAWAKAMI, Mayumi MIKAMI, Shunsuke ADACHI, Shuhei YOSHITOMI, Teruaki OCHIAI, Yumiko YONEDA (Former: SAITO), Yohei MOMMA, Satoshi SEO
  • Publication number: 20150099179
    Abstract: To increase the volume density or weight density of lithium ions that can be received and released in and from a positive electrode active material to achieve high capacity and high energy density of a secondary battery. A lithium manganese composite oxide represented by LixMnyMzOw that includes a region belonging to a space group C2/c and is covered with a carbon-containing layer is used as the positive electrode active material. The element M is an element other than lithium and manganese. The lithium manganese composite oxide has high structural stability and high capacity.
    Type: Application
    Filed: September 26, 2014
    Publication date: April 9, 2015
    Inventors: Tatsuya IKENUMA, Shuhei YOSHITOMI, Takahiro KAWAKAMI, Yumiko YONEDA (Former family: SAITO), Yohei MOMMA