Abstract: The invention describes a composition containing a) a functionalized polymer 10 that comprises at least one polyester segment 13 and at least one, in particular at least two, polymer aggregating segment 11, 12 capable of forming non-covalent bonds based on a supramolecular interaction, b) an aggregating additive 20 that comprises at least one additive aggregating segment 21 capable of forming non-covalent bonds based on the same supramolecular interaction as the polymer aggregating segments 11, 12, wherein the polymer aggregating segments 11, 12 and the additive aggregating segment 21 are ditopic, wherein the polymer aggregating segments 11, 12 and the additive aggregating segment 21 are designed such that they can form aggregates 31 that contain polymer aggregating segments 11, 12 and additive aggregating segments 21, and wherein the polyester segment (13) has a number average molecular weight of from 10?000 g/mol to 500?000 g/mol.

Abstract: A problem of the present invention is to prevent a base layer beneath the layer to be irradiated with light from deterioration in property and a functional thin film from deterioration in property as the fine patterning of a functional film is performed with light irradiation. Means for solving the problem is a compound obtained by dimerizing with light irradiation a compound (A) containing a group that has photosensitivity and can be photodimerized and a group having lyophilicity and a compound (B) containing a group that has photosensitivity and can be photodimerized and a group having liquid-repellency.

Abstract: A problem of the present invention is to provide a device having good characteristics and long life, wherein a functional thin film is formed in a desired region by a coating method; a thin film transistor; a method for producing the device; and a method for producing the thin film transistor. This problem can be solved by a device comprising: a substrate, a first electrode formed on the substrate, a functional thin film formed above the first electrode, and a second electrode disposed above the functional thin film, characterized by further comprising, in a region surrounding the region where the functional thin film is formed, a film containing a compound in which a group containing fluorine and a ?-conjugated system are bound together by a cycloalkene structure or a cycloalkane structure.

Abstract: A problem of the present invention is to prevent a base layer beneath the layer to be irradiated with light from deterioration in property and a functional thin film from deterioration in property as the fine patterning of a functional film is performed with light irradiation. Means for solving the problem is a compound obtained by dimerizing with light irradiation a compound (A) containing a group that has photosensitivity and can be photodimerized and a group having lyophilicity and a compound (B) containing a group that has photosensitivity and can be photodimerized and a group having liquid-repellency.

Abstract: A problem of the present invention is to provide a device having good characteristics and long life, wherein a functional thin film is formed in a desired region by a coating method; a thin film transistor; a method for producing the device; and a method for producing the thin film transistor. This problem can be solved by a device comprising: a substrate, a first electrode formed on the substrate, a functional thin film formed above the first electrode, and a second electrode disposed above the functional thin film, characterized by further comprising, in a region surrounding the region where the functional thin film is formed, a film containing a compound in which a group containing fluorine and a ?-conjugated system are bound together by a cycloalkene structure or a cycloalkane structure.