Abstract: A component for a plasma processing apparatus, and a plasma processing apparatus are highly resistant to plasma and are highly durable. The component includes a substrate containing a first element that is a metal element or a semimetal element, and a film located on the substrate and containing yttrium oxide as a main constituent. The film contains yttrium oxide crystal grains oriented with a deviation angle of ±10° from a {111} direction of a crystal lattice plane of yttrium oxide. The yttrium oxide crystal grains oriented with the deviation angle have an area ratio of 45% or greater.

Abstract: According to one embodiment, provided is an electrochromic device including an electrochromic layer, which contains a tungsten oxide material. The tungsten oxide material includes potassium-containing tungsten oxide particles having an average particle size of 100 nm or less. The potassium-containing tungsten oxide particles contain potassium within a range of 1 mol % to 50 mol %, and include a central section and a peripheral section adjacent to the central section. A periodicity of a crystal varies between the central section and the peripheral section.

Abstract: A component comprises a film containing yttrium oxide. A cross section of the film has a first portion, a second portion, and a third portion, and the first to third portions are separated from each other by 0.5 mm or more. A Vickers hardness B1 measured in the first portion, a Vickers hardness B2 measured in the second portion, a Vickers hardness B3 measured in the third portion, and an average value A of the Vickers hardnesses B1 to B3 are numbers satisfying 0.8A?B1?1.2A, 0.8A?B2?1.2A, and 0.8A?B3?1.2A.

Abstract: A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 ?m or less.

Abstract: According to one embodiment, a tungsten oxide material containing potassium is provided. The tungsten oxide material has a shape of particles including a central section and a peripheral section adjacent to the central section, and having an average particle size of 100 nm or less. A periodicity of a crystal varies between the central section and the peripheral section. In addition, a tungsten oxide powder mass for an electrochromic device including 80% by mass to 100% by mass of the tungsten oxide material is provided. Moreover, a slurry for producing an electrochromic device containing the above tungsten oxide material is provided.

Abstract: A sewing apparatus, includes a display input unit including a display unit configured to display an image of an input screen, and an input detection unit configured to detect an input operation on the input screen; and a control apparatus that performs display control of the display unit in response to the input operation. The control apparatus performs display control in which a background of the input screen is set to a dark color as a whole, a sewing pattern image displayed on the input screen is set to brightness higher than that of the background, and an operation unit that receives the input operation on the input screen is set to a color lighter than that of the background.

Abstract: A semiconductor solid state battery has an insulating layer provided between an N-type semiconductor and a P-type semiconductor. The first insulating layer preferably has a thickness of 3 nm to 30 ?m and a dielectric constant of 10 or less. The first insulating layer preferably has a density of 60% or more of a bulk body. The semiconductor layer preferably has a capture level introduced. The semiconductor solid state battery can eliminate leakage of an electrolyte solution.

Abstract: An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

Abstract: A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 ?m or more and 0.1 ?m or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 ?m or more and 48 ?m or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

Abstract: A component for a plasma processing apparatus includes a substrate and a film on at least a part of the substrate. The film includes an oxide, a fluoride, an oxyfluoride, or a nitride of a rare earth element. A ratio ?22/?11 of a compressive stress ?11 to occur across a surface of the film to be exposed to plasma and a compressive stress ?22 to occur across the surface in a direction perpendicular to the compressive stress ?11 is 5 or less. A plasma processing apparatus includes the above component.

Abstract: A component for a plasma processing apparatus, and a plasma processing apparatus are highly resistant to plasma and are highly durable. The component includes a substrate containing a first element that is a metal element or a semimetal element, and a film located on the substrate and containing yttrium oxide as a main constituent. The film contains yttrium oxide crystal grains oriented with a deviation angle of ±10° from a {111} direction of a crystal lattice plane of yttrium oxide. The yttrium oxide crystal grains oriented with the deviation angle have an area ratio of 45% or greater.

Abstract: A plasma processing apparatus includes: a chamber including a first member, and a second member detachable from the first member; a conductive member disposed between the first member and the second member; and a first high frequency power supply generating plasma in the chamber. The conductive member includes a resin member made of a resin material, and a metal film covering a surface of the resin member.

Abstract: According to one embodiment, provided is an electrochromic device including an electrochromic layer, which contains a tungsten oxide material. The tungsten oxide material includes potassium-containing tungsten oxide particles having an average particle size of 100 nm or less. The potassium-containing tungsten oxide particles contain potassium within a range of 1 mol % to 50 mol %, and include a central section and a peripheral section adjacent to the central section. A periodicity of a crystal varies between the central section and the peripheral section.

Abstract: A sewing apparatus, includes a display input unit including a display unit configured to display an image of an input screen, and an input detection unit configured to detect an input operation on the input screen; and a control apparatus that performs display control of the display unit in response to the input operation. The control apparatus performs display control in which a background of the input screen is set to a dark color as a whole, a sewing pattern image displayed on the input screen is set to brightness higher than that of the background, and an operation unit that receives the input operation on the input screen is set to a color lighter than that of the background.

Abstract: Provided are a member for plasma processing device which has an excellent plasma resistance and improved adhesion strength of a film to a base material, and a plasma processing device provided with the same. A member for plasma processing device includes: a base material containing a first element which is a metal element or a metalloid element; a film containing a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride as a major constituent, the film being located on the base material; and an amorphous portion containing the first element, a rare earth element, and at least one of oxygen and fluorine, the amorphous portion being interposed between the base material and the film.

Abstract: A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression: 0?Im/Ic?0.002.

Abstract: An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

Abstract: A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression: 0?Im/Ic?0.002.

Abstract: A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 ?m or more and 0.1 ?m or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 ?m or more and 48 ?m or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

Abstract: A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 ?m or less.