Patents by Inventor Shuichi Shoji
Shuichi Shoji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10563025Abstract: A polymer film has an average film thickness T0 along a straight line D passing through the center of gravity of a two-dimensional projection such that the area of the polymer film is maximized, satisfies equation (a), the average value L of distances 1 from the center of gravity to edges satisfies equation (b), the Young's modulus E satisfies equation (c), and the thickness deviation ? defined by equation (d) satisfies equation (e); and a dispersion liquid and an agglomerate using the same. (a) 10 nm?T0?1000 nm, (b) 0.1 ?m?L?500 ?m, (c) 0.01 GPa?E?4.3 GPa, (d) ?=1?T1/T2, (e) 0.346E×10?9?1.499<?<?0.073E×10?9+0.316.Type: GrantFiled: May 11, 2016Date of Patent: February 18, 2020Assignees: Toray Industries, Inc., Nanotheta Co, Ltd.Inventors: Motonori Hochi, Yuki Sekido, Ichiro Itagaki, Toru Arakane, Shinya Ohtsubo, Shinji Takeoka, Atsushi Murata, Mao Fujii, Yuya Ishizuka, Shuichi Shoji, Jun Mizuno, Takashi Kasahara
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Publication number: 20190136171Abstract: A well has a pair of side surfaces, and one of the side surfaces is in contact with a compartment of a first channel with a gas-permeable membrane being interposed therebetween and the other side surface is in contact with a compartment of a second channel with a gas-permeable membrane being interposed therebetween. The well is filled with a liquid cell culture medium, and in such a state, a high-concentration gas and a low-concentration gas, which are different in the concentration of a specific component from each other, are allowed to flow through the first and second channels, respectively, to form a concentration distribution of the specific component in the well.Type: ApplicationFiled: December 28, 2018Publication date: May 9, 2019Applicants: SHIMADZU CORPORATION, KYOTO UNIVERSITY, WASEDA UNIVERSITYInventors: Tatsuya Munaka, Hirohisa Abe, Masaki Kanai, Masakazu Akechi, Taira Maekawa, Shinya Kimura, Eishi Ashihara, Shuichi Shoji, Kentaro Kawai
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Publication number: 20180118905Abstract: A polymer film has an average film thickness T0 along a straight line D passing through the center of gravity of a two-dimensional projection such that the area of the polymer film is maximized, satisfies equation (a), the average value L of distances 1 from the center of gravity to edges satisfies equation (b), the Young's modulus E satisfies equation (c), and the thickness deviation ? defined by equation (d) satisfies equation (e); and a dispersion liquid and an agglomerate using the same. (a) 10 nm?T0?1000 nm, (b) 0.1 ?m?L?500 ?m, (c) 0.01 GPa?E?4.3 GPa, (d) ?=1?T1/T2, (e) 0.346E×10?9?1.499<?<?0.073E×10?9+0.316.Type: ApplicationFiled: May 11, 2016Publication date: May 3, 2018Inventors: Motonori Hochi, Yuki Sekido, Ichiro Itagaki, Toru Arakane, Shinya Ohtsubo, Shinji Takeoka, Atsushi Murata, Mao Fujii, Yuya Ishizuka, Shuichi Shoji, Jun Mizuno, Takashi Kasahara
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Publication number: 20130164848Abstract: A well has a pair of side surfaces, and one of the side surfaces is in contact with a compartment of a first channel with a gas-permeable membrane being interposed therebetween and the other side surface is in contact with a compartment of a second channel with a gas-permeable membrane being interposed therebetween. The well is filled with a liquid cell culture medium, and in such a state, a high-concentration gas and a low-concentration gas, which are different in the concentration of a specific component from each other, are allowed to flow through the first and second channels, respectively, to form a concentration distribution of the specific component in the well.Type: ApplicationFiled: July 8, 2011Publication date: June 27, 2013Applicants: SHIMADZU CORPORATION, WASEDA UNIVERSITY, KYOTO UNIVERSITYInventors: Tatsuya Munaka, Hirohisa Abe, Masaki Kanai, Masakazu Akechi, Taira Maekawa, Shinya Kimura, Eishi Asihara, Shuichi Shoji, Kentaro Kawai
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Patent number: 8414782Abstract: A process for producing a fluorocarbon microstructure capable of easily fabricating a three-dimensional fluorocarbon microstructure. The process for producing a fluorocarbon microstructure comprises a first processing step for forming, on a substrate (2), a film deposition portion with a given pattern made up of a through-hole figure by etching the substrate (2), a fabricating step for forming a fluorocarbon film (6) on an inner circumferential surface of a film deposition portion (9) to fabricate a fluorocarbon region surrounded by the fluorocarbon film (6), and a second processing step for fabricating the fluorocarbon microstructure protruding from a processing surface of the substrate (2) by etching a given region other than a fluorocarbon region on the substrate (2). Hence, the three-dimensional fluorocarbon microstructure can be fabricated which comprises a complicated structure that has conventionally been hard to fabricate.Type: GrantFiled: January 21, 2008Date of Patent: April 9, 2013Assignee: Waseda UniversityInventors: Takahiro Arakawa, Hiroyuki Kusakawa, Shuichi Shoji
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Publication number: 20110195277Abstract: A high density magnetic recording medium including aggregates of magnetic nanoparticles arranged stably and efficiently in demarcated sections in the surface of a substrate is manufactured by the steps of forming a plurality of parallel tracks in the surface of the substrate, forming a plurality of minute recesses serially at approximately equal intervals in each of the tracks, casting a liquid dispersion of magnetic nanoparticles into the minute recesses, and evaporating dispersing medium from the liquid dispersion, thereby forming an aggregate of magnetic nanoparticles in each of the minute recesses.Type: ApplicationFiled: December 14, 2010Publication date: August 11, 2011Applicants: WASEDA UNIVERSITY, SHOWA DENKO K.K.Inventors: Tetsuya Osaka, Atsushi Sugiyama, Takuma Hachisu, Shuichi Shoji, Jun Mizuno, Hiroshi Sakai
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Publication number: 20100167014Abstract: A process for producing a fluorocarbon microstructure capable of easily fabricating a three-dimensional fluorocarbon microstructure. The process for producing a fluorocarbon microstructure comprises a first processing step for forming, on a substrate (2), a film deposition portion with a given pattern made up of a through-hole figure by etching the substrate (2), a fabricating step for forming a fluorocarbon film (6) on an inner circumferential surface of a film deposition portion (9) to fabricate a fluorocarbon region surrounded by the fluorocarbon film (6), and a second processing step for fabricating the fluorocarbon microstructure protruding from a processing surface of the substrate (2) by etching a given region other than a fluorocarbon region on the substrate (2). Hence, the three-dimensional fluorocarbon microstructure can be fabricated which comprises a complicated structure that has conventionally been hard to fabricate.Type: ApplicationFiled: January 21, 2008Publication date: July 1, 2010Applicant: Waseda UniversityInventors: Takahiro Arakawa, Hiroyuki Kusakawa, Shuichi Shoji
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Publication number: 20090302507Abstract: To provide a mold having optical transparency, release properties, mechanical strength, dimension stability and a highly precise micropattern, and having less deformation of the micropattern; and a process for producing a base material with a transferred micropattern having less deformation of the transferred micropattern, capable of transferring highly precise micropattern of the mold. A mold 10 comprising a transparent substrate (A) 12 having chemical bonds based on the functional groups (x) on the surface having an interlayer (C) 14 formed, having a difference in linear expansion coefficient (absolute value) of less than 30 ppm/° C. from the linear expansion coefficient of the following fluoropolymer (I), and further having a heat distortion temperature of from 100 to 300° C.Type: ApplicationFiled: August 18, 2009Publication date: December 10, 2009Applicant: ASAHI GLASS COMPANY, LIMITEDInventors: Kentaro TSUNOZAKI, Yasuhide Kawaguchi, Yoshihiko Sakane, Shuichi Shoji, Jun Mizuno, Shingo Kataza
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Publication number: 20090218313Abstract: There is provided a method for manufacturing a patterned magnetic recording medium including a step of completely removing an etching resist on a magnetic layer 3, which is used for etching the magnetic layer 3, without deteriorating magnetic characteristics of the magnetic layer 3. The step of removing the etching resist used for etching the magnetic layer 3 includes the steps of irradiating the etching resist on the magnetic layer 3 or the first protective layer 4 with an excimer VUV laser under a reduced pressure and immersing the resist coating 5 remaining on the magnetic layer 3 or the first protective layer 4 into a resist removing agent solution to wash off the resist coating 5.Type: ApplicationFiled: February 27, 2009Publication date: September 3, 2009Applicants: FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD., WASEDA UNIVERSITYInventors: Satomi Kajiwara, Shuichi Shoji, Jun Mizuno, Hidetoshi Shinohara
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Microsystem, microopening film, and system and method for analizing interaction between biomolecules
Publication number: 20060021666Abstract: A micro system capable of setting an appropriate amount of stimulation being applied in order to control liquid flow in a channel. The micro system comprises micro-heaters (5b, 5c) for applying stimulation to liquid flowing through liquid channels (2b, 2c) formed in a plate (1) and controlling liquid flow by the stimulation from the micro-heaters (5b, 5c), and a means for electrically controlling the amount of stimulation being applied to the liquid from the micro-heaters (5b, 5c). An appropriate amount of stimulation can be set by electrically controlling the amount of stimulation being applied to the liquid from the micro-heaters (5b, 5c) through the control means.Type: ApplicationFiled: October 30, 2003Publication date: February 2, 2006Applicant: Waseda UniversityInventors: Takashi Funatsu, Shuichi Shoji, Yasuo Wada, Ken Tsutsui, Jun Mizuno, Yoshitaka Shirasaki -
Patent number: 6122358Abstract: A terminal management unit for executing control for connection to an operator when a communication apparatus is busy is provided in a network, and terminals connected to the network are registered as operator terminals in a master list possessed by the terminal management unit If the communication apparatus is busy when an incoming call from a caller arrives at the communication apparatus, the terminal management unit stores the telephone number of the caller in a registration list on the originating side. The terminal management unit subsequently refers to the master list, periodically calls the operator terminals and, when an operator terminal responds, calls the caller, which has been registered in the registration list on the originating side, and connects the caller to this operator terminal.Type: GrantFiled: March 4, 1997Date of Patent: September 19, 2000Assignee: Fujitsu LimitedInventors: Shuichi Shoji, Eriko Kawaguchi, Hajime Ogasawara
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Patent number: 5539814Abstract: When a subscriber A provided with a call-waiting service and connected to a subscriber B is called by another subscriber C and when the subscriber A responds to a call-waiting tone, the subscriber A is connected to the subscriber C and the subscriber B is held according to a procedure of the call-waiting service. If the subscriber B replaces the handset, a clearing intrusion tone (CIT) is sent to the subscriber A before changing a three-way connection to a connection between the subscriber A and the subscriber C, and the subscriber A notices that the held subscriber B is disconnected before attempting to communicate with the subscriber B and without having to rely on a busy signal.Type: GrantFiled: June 7, 1995Date of Patent: July 23, 1996Assignee: Fujitsu LimitedInventor: Shuichi Shoji
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Patent number: 5402005Abstract: At least one slit having a predetermined shape is formed around a contact region of a lower wiring layer formed on a substrate, and an insulating portion formed integrally with an insulating layer is embedded in this slit. This insulating layer is formed on the lower wiring layer and has a contact hole located at a position corresponding to the contact region. Since the insulating portion as a rectangular projecting portion projects into the slit downwardly from the rigid insulating layer, positional errors caused by thermal expansion of the lower wiring layer in annealing of the upper wiring layer can be suppressed, and an abnormal geometry such as a projection on the upper wiring layer can be prevented. In addition, a semiconductor device free from interwiring short-circuiting and excellent in flatness can be obtained.Type: GrantFiled: August 15, 1994Date of Patent: March 28, 1995Assignee: Kabushiki Kaisha ToshibaInventors: Kohichi Takayama, Masanori Kinugasa, Munenobu Kida, Shuichi Shoji