Patents by Inventor Shuichiro Adachi

Shuichiro Adachi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10927442
    Abstract: A nanocrystal production method includes a light irradiation step of applying light to a surface of a metal material immersed in water to form nanocrystals on the surface. In this nanocrystal production method, the metal material contains iron, the nanocrystal contains at least one of iron oxide and iron hydroxide, and in the spectrum of the light, a wavelength at which the intensity is maximum is not less than 360 nm and less than 620 nm.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: February 23, 2021
    Assignees: Showa Denko Materials Co., Ltd., NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY
    Inventors: Shuichiro Adachi, Masaki Kitagawa, Seiichi Watanabe, Lihua Zhang, Noriyuki Okinaka, Dai Takai
  • Publication number: 20190249288
    Abstract: A nanocrystal production method includes a light irradiation step of applying light to a surface of a metal material immersed in water to form nanocrystals on the surface. In this nanocrystal production method, the metal material contains iron, the nanocrystal contains at least one of iron oxide and iron hydroxide, and in the spectrum of the light, a wavelength at which the intensity is maximum is not less than 360 nm and less than 620 nm.
    Type: Application
    Filed: August 25, 2017
    Publication date: August 15, 2019
    Inventors: Shuichiro ADACHI, Masaki KITAGAWA, Seiichi WATANABE, Lihua ZHANG, Noriyuki OKINAKA, Dai TAKAI
  • Publication number: 20190202692
    Abstract: A hydrogen gas production method includes a light irradiation step of applying light to a surface of a metal material immersed in water to produce gas containing hydrogen. In this hydrogen gas production method, the metal material contains iron, in the spectrum of the light, a wavelength at which the intensity is maximum is not less than 360 nm and less than 620 nm, and as the gas is produced, at least one of iron oxide and iron hydroxide is formed on the surface.
    Type: Application
    Filed: August 25, 2017
    Publication date: July 4, 2019
    Inventors: Shuichiro ADACHI, Masaki KITAGAWA, Seiichi WATANABE, Lihua ZHANG, Noriyuki OKINAKA
  • Patent number: 10312402
    Abstract: The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Grant
    Filed: April 26, 2014
    Date of Patent: June 4, 2019
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Youichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi
  • Patent number: 9714262
    Abstract: A composition for forming a passivation layer, comprising a compound represented by Formula (I): M(OR1)m. In Formula (I), M comprises at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.
    Type: Grant
    Filed: July 19, 2013
    Date of Patent: July 25, 2017
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Shuichiro Adachi, Masato Yoshida, Takeshi Nojiri, Yasushi Kurata, Tooru Tanaka, Akihiro Orita, Tsuyoshi Hayasaka, Takashi Hattori, Mieko Matsumura, Keiji Watanabe, Masatoshi Morishita, Hirotaka Hamamura
  • Patent number: 9608143
    Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Grant
    Filed: November 10, 2013
    Date of Patent: March 28, 2017
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Youichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Keiko Kizawa
  • Patent number: 9520529
    Abstract: The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Grant
    Filed: November 9, 2013
    Date of Patent: December 13, 2016
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Yoichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Keiko Kizawa
  • Patent number: 9406834
    Abstract: The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.
    Type: Grant
    Filed: May 4, 2014
    Date of Patent: August 2, 2016
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Akihiro Orita, Masato Yoshida, Takeshi Nojiri, Yoichi Machii, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Toru Tanaka
  • Publication number: 20160211389
    Abstract: A composition for forming a passivation layer, including a resin and a compound represented by Formula (I): M(OR1)m. In Formula (I), M includes at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.
    Type: Application
    Filed: March 24, 2016
    Publication date: July 21, 2016
    Inventors: Tooru TANAKA, Masato YOSHIDA, Takeshi NOJIRI, Yasushi KURATA, Akihiro ORITA, Shuichiro ADACHI, Tsuyoshi HAYASAKA, Takashi HATTORI, Mieko MATSUMURA, Keiji WATANABE, Masatoshi MORISHITA, Hirotaka HAMAMURA
  • Publication number: 20160118513
    Abstract: A composition for forming an electrode includes a phosphorus-containing copper alloy particle, a tin-containing particle, a specific metal element M-containing particle, a glass particle, a solvent and a resin, in which M is at least one selected from the group consisting of Li, Be, Na, Mg, K, Ca, Rb, Sr, Cs, Ba, Fr, Ra, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Pd, Ag, Cd, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Al, Ga, Ge, In, Sb, Tl, Pb, Bi and Po.
    Type: Application
    Filed: May 13, 2013
    Publication date: April 28, 2016
    Inventors: Shuichiro ADACHI, Masato YOSHIDA, Takeshi NOJIRI, Yasushi KURATA, Yoshiaki KURIHARA, Takahiko KATO
  • Publication number: 20160099361
    Abstract: The invention provides an element including a semiconductor substrate and an electrode disposed on the semiconductor substrate, the electrode being a sintered product of a composition for an electrode that includes phosphorus-containing copper alloy particles, glass particles and a dispersing medium, and the electrode includes a line-shaped electrode having an aspect ratio, which is defined as electrode short length : electrode height, of from 2:1 to 250:1.
    Type: Application
    Filed: December 8, 2015
    Publication date: April 7, 2016
    Inventors: Shuichiro Adachi, Masato Yoshida, Takeshi Nojiro, Yoshiaki Kurihara, Takahiko Kato
  • Patent number: 9240502
    Abstract: The invention provides an element including a semiconductor substrate and an electrode disposed on the semiconductor substrate, the electrode being a sintered product of a composition for an electrode that includes phosphorus-containing copper alloy particles, glass particles and a dispersing medium, and the electrode includes a line-shaped electrode having an aspect ratio, which is defined as electrode short length:electrode height, of from 2:1 to 250:1.
    Type: Grant
    Filed: July 24, 2012
    Date of Patent: January 19, 2016
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Shuichiro Adachi, Masato Yoshida, Takeshi Nojiri, Yoshiaki Kurihara, Takahiko Kato
  • Patent number: 9224517
    Abstract: A paste composition for an electrode, the paste composition comprising: phosphorous-containing copper alloy particles in which the content of phosphorous is from 6% by mass to 8% by mass; glass particles; a solvent; and a resin.
    Type: Grant
    Filed: April 5, 2012
    Date of Patent: December 29, 2015
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Shuichiro Adachi, Masato Yoshida, Takeshi Nojiri, Mitsunori Iwamuro, Keiko Kizawa, Takuya Aoyagi, Hiroki Yamamoto, Takashi Naito, Takahiko Kato
  • Publication number: 20150228812
    Abstract: A composition for forming a passivation layer, including a resin and a compound represented by Formula (I): M(OR1)m. In Formula (I), M includes at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.
    Type: Application
    Filed: July 19, 2013
    Publication date: August 13, 2015
    Inventors: Tooru Tanaka, Masato Yoshida, Takeshi Nojira, Yasushi Kurata, Akihiro Orita, Shuichiro Adachi, Tsuyoshi Hayasaka, Takashi Hattori, Mieko Matsumura, Keiji Watanabe, Masatoshi Morishita, Hirotaka Hamamura
  • Publication number: 20150214418
    Abstract: The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: April 3, 2015
    Publication date: July 30, 2015
    Inventors: Yoichi MACHII, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Keiko Kizawa
  • Publication number: 20150214390
    Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: April 3, 2015
    Publication date: July 30, 2015
    Inventors: Yoichi MACHII, Masato YOSHIDA, Takeshi NOJIRI, Kaoru OKANIWA, Mitsunori IWAMURO, Shuichiro ADACHI, Tetsuya SATO, Keiko KIZAWA
  • Publication number: 20150166582
    Abstract: A composition for forming a passivation layer, comprising a compound represented by Formula (I): M(OR1)m. In Formula (I), M comprises at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.
    Type: Application
    Filed: July 19, 2013
    Publication date: June 18, 2015
    Inventors: Shuichiro Adachi, Masato Yoshida, Takeshi Nojiri, Yasushi Kurata, Tooru Tanaka, Akihiro Orita, Tsuyoshi Hayasaka, Takashi Hattori, Mieko Matsumura, Keiji Watanabe, Masatoshi Morishita, Hirotaka Hamamura
  • Publication number: 20150099352
    Abstract: A composition for forming an n-type diffusion layer includes a glass powder containing P2O5, SiO2 and CaO and a dispersion medium. An n-type diffusion layer and a photovoltaic cell element having an n-type diffusion layer are produced by applying the composition for forming an n-type diffusion layer on a semiconductor substrate and by subjecting the substrate to a thermal diffusion treatment.
    Type: Application
    Filed: July 17, 2012
    Publication date: April 9, 2015
    Inventors: Yoichi Machii, Masato Yoshida, Takeshi Nojiri, Mitsunori Iwamuro, Akihiro Orita, Shuichiro Adachi, Tetsuya Saito
  • Publication number: 20140242741
    Abstract: The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.
    Type: Application
    Filed: May 4, 2014
    Publication date: August 28, 2014
    Applicant: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Akihiro ORITA, Masato YOSHIDA, Takeshi NOJIRI, Yoichi MACHII, Mitsunori IWAMURO, Shuichiro ADACHI, Tetsuya SATO, Toru TANAKA
  • Publication number: 20140227821
    Abstract: The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: April 26, 2014
    Publication date: August 14, 2014
    Applicant: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Youichi MACHII, Masato YOSHIDA, Takeshi NOJIRI, Kaoru OKANIWA, Mitsunori IWAMURO, Shuichiro ADACHI