Patents by Inventor Shuji Hayase
Shuji Hayase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7812252Abstract: The present invention provides a dye sensitized solar cell comprising an n-type semiconductor electrode containing a dye, an opposed electrode, and a gel electrolyte arranged between the n-type semiconductor and the opposed electrode and containing a gelling agent and an electrolyte that contains iodine, wherein the gelling agent contains a compound including an N-containing group and at least one atomic group selected from a group consisting of a sulfonic group and a carboxylic group.Type: GrantFiled: February 5, 2007Date of Patent: October 12, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Shinji Murai, Satoshi Mikoshiba, Hiroyasu Sumino, Shuji Hayase
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Publication number: 20090197139Abstract: Disclosed is an ion conductive film containing a composite body between an ion conductive polymer and a nitrogen-containing compound. The nitrogen-containing compound has an immobilized portion to the ion conductive polymer and exhibits an enantiomeric isomer structure when protonated. Alternatively, the nitrogen-containing compound is capable of assuming a chemical structure in which the multiple bond represented by the double bound is moved, with the atoms constituting the molecule not changing their positions.Type: ApplicationFiled: April 13, 2009Publication date: August 6, 2009Applicant: Kabushiki Kaisha ToshibaInventors: Lois HOBSON, Shuji HAYASE, Yoshihiko NAKANO
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Patent number: 7538169Abstract: Disclosed is an ion conductive film containing a composite body between an ion conductive polymer and a nitrogen-containing compound. The nitrogen-containing compound has an immobilized portion to the ion conductive polymer and exhibits an enantiomeric isomer structure when protonated. Alternatively, the nitrogen-containing compound is capable of assuming a chemical structure in which the multiple bond represented by the double bound is moved, with the atoms constituting the molecule not changing their positions.Type: GrantFiled: July 22, 2005Date of Patent: May 26, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Lois Hobson, Shuji Hayase, Yoshihiko Nakano
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Publication number: 20070137702Abstract: The present invention provides a dye sensitized solar cell comprising an n-type semiconductor electrode containing a dye, an opposed electrode, and a gel electrolyte arranged between the n-type semiconductor and the opposed electrode and containing a gelling agent and an electrolyte that contains iodine, wherein the gelling agent contains a compound including an N-containing group and at least one atomic group selected from a group consisting of a sulfonic group and a carboxylic group.Type: ApplicationFiled: February 5, 2007Publication date: June 21, 2007Inventors: Shinji Murai, Satoshi Mikoshiba, Hiroyasu Sumino, Shuji Hayase
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Patent number: 7196264Abstract: The present invention provides a dye sensitized solar cell comprising an n-type semiconductor electrode containing a dye, an opposed electrode, and a gel electrolyte arranged between the n-type semiconductor and the opposed electrode and containing a gelling agent and an electrolyte that contains iodine, wherein the gelling agent contains a compound including an N-containing group and at least one atomic group selected from a group consisting of a sulfonic group and a carboxylic group.Type: GrantFiled: December 23, 2002Date of Patent: March 27, 2007Assignee: Kabushiki Kaisha ToshibaInventors: Shinji Murai, Satoshi Mikoshiba, Hiroyasu Sumino, Shuji Hayase
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Patent number: 7126054Abstract: Disclosed is a dye-sensitized solar cell comprising a gel electrolyte that contains a gelling agent and an electrolyte, wherein the gelling agent contains at least one kind of a polymer selected from the group consisting of a first polymer in which polysulfonic acid is crosslinked by a metal ion having a valency of not less than two, a second polymer in which polycarboxylic acid is crosslinked by a metal ion having a valency of not less than two, a third polymer in which a quaternary ammonium salt of polysulfonic acid is crosslinked by a metal ion having a valency of not less than two and a fourth polymer in which a quaternary ammonium salt of polycarboxylic acid is crosslinked by a metal ion having a valency of not less than two.Type: GrantFiled: June 27, 2002Date of Patent: October 24, 2006Assignee: Kabushiki Kaisha ToshibaInventors: Shinji Murai, Hiroyasu Sumino, Satoshi Mikoshiba, Shuji Hayase
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Publication number: 20050256213Abstract: Disclosed is an ion conductive film containing a composite body between an ion conductive polymer and a nitrogen-containing compound. The nitrogen-containing compound has an immobilized portion to the ion conductive polymer and exhibits an enantiomeric isomer structure when protonated. Alternatively, the nitrogen-containing compound is capable of assuming a chemical structure in which the multiple bond represented by the double bound is moved, with the atoms constituting the molecule not changing their positions.Type: ApplicationFiled: July 22, 2005Publication date: November 17, 2005Applicant: Kabushiki Kaisha ToshibaInventors: Lois Hobson, Shuji Hayase, Yoshihiko Nakano
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Patent number: 6936365Abstract: Disclosed is an ion conductive film containing a composite body between an ion conductive polymer and a nitrogen-containing compound and a fuel cell including the composite body. The nitrogen-containing compound has an immobilized portion to the ion conductive polymer and exhibits a resonance structure when protonated. The nitrogen-containing compound having a resonance structure when protonated is capable of assuming a chemical structure in which the multiple bond represented by the double bond is moved, with the atoms constituting the molecule not changing their positions.Type: GrantFiled: September 10, 2001Date of Patent: August 30, 2005Assignee: Kabushiki Kaisha ToshibaInventors: Lois Hobson, Shuji Hayase, Yoshihiko Nakano
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Publication number: 20030164188Abstract: The present invention provides a dye sensitized solar cell comprising an n-type semiconductor electrode containing a dye, an opposed electrode, and a gel electrolyte arranged between the n-type semiconductor and the opposed electrode and containing a gelling agent and an electrolyte that contains iodine, wherein the gelling agent contains a compound including an N-containing group and at least one atomic group selected from a group consisting of a sulfonic group and a carboxylic group.Type: ApplicationFiled: December 23, 2002Publication date: September 4, 2003Inventors: Shinji Murai, Satoshi Mikoshiba, Hiroyasu Sumino, Shuji Hayase
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Publication number: 20030127130Abstract: Disclosed is a dye-sensitized solar cell comprising a gel electrolyte that contains a gelling agent and an electrolyte, wherein the gelling agent contains at least one kind of a polymer selected from the group consisting of a first polymer in which polysulfonic acid is crosslinked by a metal ion having a valency of not less than two, a second polymer in which polycarboxylic acid is crosslinked by a metal ion having a valency of not less than two, a third polymer in which a quatertiary ammonium salt of polysulfonic acid is crosslinked by a metal ion having a valency of not less than two and a fourth polymer in which a quatertiary ammonium salt of polycarboxylic acid is crosslinked by a metal ion having a valency of not less than two.Type: ApplicationFiled: June 27, 2002Publication date: July 10, 2003Inventors: Shinji Murai, Hiroyasu Sumino, Satoshi Mikoshiba, Shuji Hayase
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Patent number: 6569595Abstract: A method of forming a pattern which comprises the steps of, forming a matrix pattern on a work film, filling an opened space in the matrix pattern with a mask material layer containing at least one kind of a network carbon polymer having a repeating unit represented by the following general formulas (CP1) to (CP4) on the work film, forming a mask material pattern by removing the matrix pattern, and forming a work film pattern by transferring the mask material pattern to the work film: wherein R is halogen atom, hydrogen atom or a substituted or unsubstituted hydrocarbon group, A is a polyvalent organic group, and m, n and k denote respectively a positive integer.Type: GrantFiled: February 24, 2000Date of Patent: May 27, 2003Assignee: Kabushiki Kaisha ToshibaInventors: Yasuhiko Sato, Eishi Shiobara, Yasunobu Onishi, Shuji Hayase, Yoshihiko Nakano
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Patent number: 6437090Abstract: A curing catalyst comprising at least one of a cationic curing catalyst component and an organo-metallic compound component. At least one of these components is capable of reversibly repeating the dissolution and precipitation through heating and cooling. The cationic curing catalyst component includes in its molecule at least one substituted or unsubstituted hydrocarbon group having 10 or more carbon atoms, or at least one cyclic organic structure having a substituted or unsubstituted hydrocarbon group having 10 or more carbon atoms.Type: GrantFiled: June 17, 1999Date of Patent: August 20, 2002Assignee: Kabushiki Kaisha ToshibaInventors: Shinji Murai, Shuji Hayase, Shinetsu Fujieda, Rumiko Hayase, Yasuyuki Hotta
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Publication number: 20020090541Abstract: Disclosed is an ion conductive film containing a composite body between an ion conductive polymer and a nitrogen-containing compound. The nitrogen-containing compound has an immobilized portion to the ion conductive polymer and exhibits an enantiomeric isomer structure when protonated. Alternatively, the nitrogen-containing compound is capable of assuming a chemical structure in which the multiple bond represented by the double bound is moved, with the atoms constituting the molecule not changing their positions.Type: ApplicationFiled: September 10, 2001Publication date: July 11, 2002Inventors: Lois Hobson, Shuji Hayase, Yoshihiko Nakano
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Patent number: 6410748Abstract: A monomer represented by the following general formula (m-1): wherein R is a group having an alicyclic skeleton, R2s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group, X1 is a bivalent organic group containing a heteroatom, j is an integer of 0 to 3, and R1 is a group selected from the following groups, a monovalent organic group having Si (R1-1), and —(X2)k—R4—(X3)m—C(R6)3 (R1-2), wherein X2 and X3 are a bivalent organic group containing a heteroatom, k and m are an integer of 0 to 3, R4 is a bivalent alkyl group, R6s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group.Type: GrantFiled: May 3, 2001Date of Patent: June 25, 2002Assignee: Kabushiki Kaisha ToshibaInventors: Naomi Shida, Toru Ushirogouchi, Koji Asakawa, Takeshi Okino, Shuji Hayase, Yoshihiko Nakano, Makoto Nakase
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Patent number: 6384321Abstract: The present invention provides an electrolyte composition, comprising an electrolyte containing at least one kind of an imidazolium salt selected from the group consisting of 1-methyl-3-propyl imidazolium iodide, 1-methyl-3-isopropyl imidazolium iodide, 1-methyl-3-butyl imidazolium iodide, 1-methyl-3-isobutyl imidazolium iodide and 1-methyl-3-sec-butyl imidazolium iodide, a halogen-containing compound dissolved in the electrolyte, and a compound dissolved in the electrolyte and containing at least one element selected from the group consisting of N, P and S, the compound being capable of forming an onium salt together with the halogen-containing compound.Type: GrantFiled: September 22, 2000Date of Patent: May 7, 2002Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Mikoshiba, Hiroyasu Sumino, Maki Yonetsu, Shuji Hayase
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Patent number: 6291129Abstract: A monomer represented by the following general formula (m-1): wherein R is a group having an alicyclic skeleton, R2s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group, X1 is a bivalent organic group containing a heteroatom, j is an integer of 0 to 3, and R1 is a group selected from the following groups, a monovalent organic group having Si (R1-1), and —(X2)k—R4—(X3)m—C(R6)3 (R1-2), wherein X2 and X3 are a bivalent organic group containing a heteroatom, k and m are an integer of 0 to 3, R4 is a bivalent alkyl group, R6s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group.Type: GrantFiled: August 28, 1998Date of Patent: September 18, 2001Assignee: Kabushiki Kaisha ToshibaInventors: Naomi Shida, Toru Ushirogouchi, Koji Asakawa, Takeshi Okino, Shuji Hayase, Yoshihiko Nakano, Makoto Nakase
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Patent number: 6270948Abstract: A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.Type: GrantFiled: June 7, 1999Date of Patent: August 7, 2001Assignee: Kabushiki Kaisha ToshibaInventors: Yasuhiko Sato, Yoshihiko Nakano, Rikako Kani, Shuji Hayase, Yasunobu Onishi, Eishi Shiobara, Seiro Miyoshi, Hideto Matsuyama, Masaki Narita, Sawako Yoshikawa
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Patent number: 6025117Abstract: A polysilane having a repeating unit represented by the following general formula (LPS-I), ##STR1## wherein A is a bivalent organic group, R.sup.1 substituents may be the same or different and are selected from hydrogen atom and substituted or unsubstituted hydrocarbon group and silyl group. The polysilane is excellent in solublity in an organic solvent so that it can be formed into a film by way of a coating method, which is excellent in mechanical strength and heat resistance. The polysilane can be employed as an etching mask to be disposed under a resist in a manufacturing method of a semiconductor device. The polysilane exhibits anti-reflective effect during exposure, a large etch rate ratio in relative to a resist, and excellent dry etching resistance.Type: GrantFiled: December 8, 1997Date of Patent: February 15, 2000Assignee: Kabushiki Kaisha ToshibaInventors: Yoshihiko Nakano, Rikako Kani, Shuji Hayase, Yasuhiko Sato, Seiro Miyoshi, Toru Ushirogouchi, Sawako Yoshikawa, Hideto Matsuyama, Yasunobu Onishi, Masaki Narita, Toshiro Hiraoka
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Patent number: 6022814Abstract: A material of forming silicon oxide film comprising a polymer having a repeating unit represented by the following general formula (1A), (1B) or (1C); ##STR1## wherein R.sup.1 is a substituent group which can be eliminated at a temperature ranging from 250.degree. C. to the glass transition point of the material of forming silicon oxide film; and R.sup.2 is a substituent group which cannot be eliminated at a temperature of 250.degree. C. or more.Type: GrantFiled: February 12, 1998Date of Patent: February 8, 2000Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Mikoshiba, Yoshihiko Nakano, Shuji Hayase
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Patent number: 6004730Abstract: There is proposed a method of forming an insulating film pattern, which enables an insulating pattern of high precision and low dielectric constant to be easily obtained by means of an alkali development with basic solution. This method comprises the steps of coating a photosensitive composition comprising a first silicone polymer having a specific monomer and a second silicone polymer having a specific monomer on a substrate thereby to form a film of photosensitive composition, selectively exposing the film of photosensitive composition, alkali-developing the exposed film to form a pattern, and heat-treating the pattern of the photosensitive composition film.Type: GrantFiled: September 2, 1997Date of Patent: December 21, 1999Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Mikoshiba, Yoshihiko Nakano, Rikako Kani, Shuji Hayase