Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {1011} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {1013} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {1122} gallium nitride (GaN) grown on a {1100} sapphire substrate, and (4) {1013} gallium nitride (GaN) grown on a {1100} sapphire substrate.

Abstract: A keyboard having: a base panel, a switch panel including a hole portion, a membrane sheet including a contact portion, a key top adapted to be depressed for switching the contact portion ON, and a housing supporting and guiding the key top to move freely in a vertical direction, including each a tube portion on an upper end side having a guide hole formed for inserting a stem formed integrally with the key top and a flange portion on an lower end side extending laterally around the tube portion in a size larger than the hole portion; wherein the housing is inserted into the hole portion from a back side of the switch panel, the flange portion being attached to the back side of the switch panel.

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {1011} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {1013} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {1122} gallium nitride (GaN) grown on a {1100} sapphire substrate, and (4) {1013} gallium nitride (GaN) grown on a {1100} sapphire substrate.

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13 } gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.

Abstract: A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface.

Abstract: A keyboard having: a base panel, a switch panel including a hole portion, a membrane sheet including a contact portion, a key top adapted to be depressed for switching the contact portion ON, and a housing supporting and guiding the key top to move freely in a vertical direction, including each a tube portion on an upper end side having a guide hole formed for inserting a stem formed integrally with the key top and a flange portion on an lower end side extending laterally around the tube portion in a size larger than the hole portion; wherein the housing is inserted into the hole portion from a back side of the switch panel, the flange portion being attached to the back side of the switch panel.