Patents by Inventor Shuji Nakamura

Shuji Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11000180
    Abstract: A flexible tube insertion apparatus includes an insertion section, one or more stiffness variable portion, and a detection unit. The flexible tube insertion apparatus includes a bending information calculator, a main determiner, and a controller that performs control to increase a stiffness of the stiffness variable portion provided in a segment located in a bent part, when the main determiner determines that the bent part is present and the segment provided in the stiffness variable portion is located in the bent part.
    Type: Grant
    Filed: May 11, 2018
    Date of Patent: May 11, 2021
    Assignee: OLYMPUS CORPORATION
    Inventors: Takeshi Takahashi, Shuji Nakamura
  • Patent number: 10985285
    Abstract: A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 ?m. A flip chip display device is also disclosed.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: April 20, 2021
    Assignee: The Regents of the University of California
    Inventors: Benjamin P. Yonkee, Asad J. Mughal, David Hwang, Erin C. Young, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 10985293
    Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: April 20, 2021
    Assignees: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Tetsuo Fujii, Yan Gao, Evelyn L. Hu, Shuji Nakamura
  • Publication number: 20210104504
    Abstract: A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.
    Type: Application
    Filed: August 17, 2017
    Publication date: April 8, 2021
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Benjamin P. Yonkee, Erin C. Young, Charles Forman, John T. Leonard, SeungGeun Lee, Dan Cohen, Robert M. Farrell, Michael Iza, Burhan Saifaddin, Abdullah Almogbel, Humberto Foronda, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Publication number: 20200390315
    Abstract: A flexible tube insertion apparatus includes a flexible insertion section to be inserted into a subject and bent by a reaction force from the subject, a variable stiffness unit provided in the insertion section and configured to change a stiffness of the insertion section, and a shape detector configured to detect a bent shape of the insertion section. The apparatus further includes a force specifier configured to acquire a distribution of the reaction force on a distal side from a predetermined point in the bent shape and specify a maximum reaction force position, and a stiffness controller configured to control a stiffness of the variable stiffness unit so as to increase a stiffness of the variable stiffness unit between the predetermined point and the maximum reaction force position.
    Type: Application
    Filed: August 28, 2020
    Publication date: December 17, 2020
    Applicant: OLYMPUS CORPORATION
    Inventors: Shuji NAKAMURA, Takeshi TAKAHASHI, Yuichi IKEDA
  • Patent number: 10863884
    Abstract: One embodiment of the present invention is a flexible tube insertion apparatus including a flexible insertion section to be inserted into a subject. The flexible tube insertion apparatus includes an insertion section state detecting device that detects a state of the insertion section necessary for insertion prediction as detection information when the insertion section is inserted into a subject, and at least one circuit that predicts, using the detection information detected by the insertion section state detecting device, a propulsion state of a distal end of the insertion section and a state of the subject when the insertion section is further inserted from the state of the insertion section, and produces an output based on the prediction.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: December 15, 2020
    Assignee: OLYMPUS CORPORATION
    Inventor: Shuji Nakamura
  • Publication number: 20200335663
    Abstract: A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.
    Type: Application
    Filed: February 6, 2017
    Publication date: October 22, 2020
    Applicant: The Regents of the University of California
    Inventors: Asad J. Mughal, Stacy J. Kowsz, Robert M. Farrell, Benjamin P. Yonkee, Erin C. Young, Christopher D. Pynn, Tal Margalith, James S. Speck, Shuji Nakamura, Steven P. DenBaars
  • Publication number: 20200259314
    Abstract: A sensing apparatus, an illumination system, and a data communication system including a Vertical Cavity Surface Emitting Laser (VCSEL) or VCSEL array.
    Type: Application
    Filed: October 31, 2018
    Publication date: August 13, 2020
    Applicant: The Regents of the University of California
    Inventors: Jared Kearns, Charles Forman, Dan Cohen, Kenneth S. Kosik, Shuji Nakamura
  • Publication number: 20200243334
    Abstract: A method for protecting a semiconductor film comprised of one or more layers during processing. The method includes placing a surface of the semiconductor film in direct contact with a surface of a protective covering, such as a separate substrate piece, that forms an airtight or hermetic seal with the surface of the semiconductor film, so as to reduce material degradation and evaporation in the semiconductor film. The method includes processing the semiconductor film under some conditions, such as a thermal annealing and/or controlled ambient, which might cause the semiconductor film's evaporation or degradation without the protective covering.
    Type: Application
    Filed: January 24, 2020
    Publication date: July 30, 2020
    Applicant: The Regents of the University of California
    Inventors: Christian J. Zollner, Michael Iza, James S. Speck, Shuji Nakamura, Steven P. DenBaars
  • Publication number: 20200244036
    Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 ?, or at least 20 ?, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In-Au bonding. This is the first report of a VCSEL capable of continuous wave operation.
    Type: Application
    Filed: October 2, 2018
    Publication date: July 30, 2020
    Applicant: The Regents of the University of California
    Inventors: Charles Forman, SeungGeun Lee, Erin C. Young, Jared Kearns, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Publication number: 20200212258
    Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
    Type: Application
    Filed: September 5, 2019
    Publication date: July 2, 2020
    Inventors: Tetsuo Fujii, Yan Gao, Evelyn L. Hu, Shuji Nakamura
  • Patent number: 10685835
    Abstract: A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: June 16, 2020
    Assignees: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY (KACST)
    Inventors: Benjamin P. Yonkee, Erin C. Young, John T. Leonard, Tal Margalith, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Patent number: 10660504
    Abstract: In a flexible tube insertion apparatus, at least one circuit determines whether an S-shape is formed in an insertion section based on a shape information of the insertion section detected by a detector, determines whether an intersection angle between an extension line of a central axis of the insertion section and a tangential line for the insertion section at an inflection point is enlarged or not based on the shape information, and determines whether or not the stiffness variable portions are provided in a position of the S-shape in the insertion section when it is determined that the S-shape is formed and the intersection angle is enlarged. A stiffness controller increases a stiffness of the stiffness variable portions included in the position of the S-shape in accordance with the determination of the circuit.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: May 26, 2020
    Assignee: OLYMPUS CORPORATION
    Inventors: Shuji Nakamura, Takeshi Takahashi
  • Patent number: 10658557
    Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: May 19, 2020
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Shuji Nakamura, Steven P. DenBaars, Hirokuni Asamizu
  • Patent number: 10644213
    Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: May 5, 2020
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Shuji Nakamura, Steven P. DenBaars, Hirokuni Asamizu
  • Publication number: 20200100653
    Abstract: A flexible tube insertion device includes a flexible tube section, at least one variable stiffness unit, at least one state detector, and a stiffness controller. The flexible tube section is segmented along an axial direction into segments and configured to be inserted into an insertion target. The variable stiffness unit is configured to vary bending stiffness of the flexible tube section in units at least one segment. The state detector is configured to detect information relating to shape information of the flexible tube section. The stiffness controller is configured to cause the variable stiffness unit to reduce bending stiffness of a portion of the flexible tube section including a place where the flexible tube section is easy to bend in units of at least one segment based on the shape information.
    Type: Application
    Filed: November 18, 2019
    Publication date: April 2, 2020
    Applicant: OLYMPUS CORPORATION
    Inventor: Shuji NAKAMURA
  • Patent number: 10593854
    Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: March 17, 2020
    Assignee: The Regents of the University of California
    Inventors: Shuji Nakamura, Steven P. DenBaars, Hirokuni Asamizu
  • Patent number: 10529892
    Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Grant
    Filed: September 7, 2017
    Date of Patent: January 7, 2020
    Assignees: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Japan Science and Technology Agency
    Inventors: Robert M. Farrell, Jr., Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma, Umesh K. Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Publication number: 20200000315
    Abstract: A flexible tube insertion apparatus includes: a flexible tube to be inserted into an insertion target body; a state detector to detect state information of the flexible tube relating to a shape of the flexible tube; and a bent formation determining section to determine whether first and second bent portions bent in different directions are formed on the flexible tube based on the state information. The flexible tube insertion apparatus further includes a shape changing section, arranged in the flexible tube, to actively change the shape of the flexible tube so that an angle at which a first virtual flat plane on which the first bent portion is formed and a second virtual flat plane on which the second bent portion is formed intersect becomes smaller, when the bent formation determining section determines that the first and second bent portions are formed on the flexible tube.
    Type: Application
    Filed: June 19, 2019
    Publication date: January 2, 2020
    Applicant: OLYMPUS CORPORATION
    Inventors: Takeshi Takahashi, Ryo Tezuka, Shuji Nakamura
  • Patent number: 10517461
    Abstract: A flexible tube insertion apparatus includes an insertion section including a plurality of segments, a plurality of stiffness variable portions provided in the respective segments and configured to vary stiffness of the respective segments, and a state detector configured to detect a shape of the insertion section. The apparatus includes a state calculator configured to acquire a shape of a tube at a time when the insertion section advances into the tube, and configured to calculate a relative position of the segment to the tube, and a control device configured to control, based on the shape of the tube, the stiffness variable portion provided in the segment which is calculated the relative position to the tube by the state calculator.
    Type: Grant
    Filed: December 12, 2017
    Date of Patent: December 31, 2019
    Assignee: OLYMPUS CORPORATION
    Inventors: Shuji Nakamura, Takeshi Takahashi